TWI456626B - 發光裝置之基板蝕刻 - Google Patents

發光裝置之基板蝕刻 Download PDF

Info

Publication number
TWI456626B
TWI456626B TW094105990A TW94105990A TWI456626B TW I456626 B TWI456626 B TW I456626B TW 094105990 A TW094105990 A TW 094105990A TW 94105990 A TW94105990 A TW 94105990A TW I456626 B TWI456626 B TW I456626B
Authority
TW
Taiwan
Prior art keywords
substrate
etching
tantalum carbide
light
aqueous
Prior art date
Application number
TW094105990A
Other languages
English (en)
Chinese (zh)
Other versions
TW200540932A (en
Inventor
Gerald H Negley
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200540932A publication Critical patent/TW200540932A/zh
Application granted granted Critical
Publication of TWI456626B publication Critical patent/TWI456626B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
TW094105990A 2004-03-26 2005-03-01 發光裝置之基板蝕刻 TWI456626B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/811,350 US7202181B2 (en) 2004-03-26 2004-03-26 Etching of substrates of light emitting devices

Publications (2)

Publication Number Publication Date
TW200540932A TW200540932A (en) 2005-12-16
TWI456626B true TWI456626B (zh) 2014-10-11

Family

ID=34960471

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105990A TWI456626B (zh) 2004-03-26 2005-03-01 發光裝置之基板蝕刻

Country Status (9)

Country Link
US (2) US7202181B2 (de)
EP (1) EP1728284B1 (de)
JP (2) JP4740942B2 (de)
KR (1) KR101230812B1 (de)
CN (1) CN1950955A (de)
AT (1) ATE521993T1 (de)
CA (1) CA2560688A1 (de)
TW (1) TWI456626B (de)
WO (1) WO2005104254A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150393A (ja) * 2003-11-14 2005-06-09 Sharp Corp 受発光素子用サブマウント
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
WO2007081719A2 (en) 2006-01-05 2007-07-19 Illumitex, Inc. Separate optical device for directing light from an led
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US8264138B2 (en) 2006-01-20 2012-09-11 Cree, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
JP2008028259A (ja) * 2006-07-24 2008-02-07 Mitsubishi Chemicals Corp 単結晶ＧａＮ基板の製造方法
CN101554089A (zh) 2006-08-23 2009-10-07 科锐Led照明科技公司 照明装置和照明方法
KR101262386B1 (ko) 2006-09-25 2013-05-08 엘지이노텍 주식회사 질화물 반도체 발광소자의 제조 방법
US20090275157A1 (en) * 2006-10-02 2009-11-05 Illumitex, Inc. Optical device shaping
JP2010506402A (ja) * 2006-10-02 2010-02-25 イルミテックス， インコーポレイテッド Ｌｅｄのシステムおよび方法
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
TWI416615B (zh) * 2007-10-16 2013-11-21 Epistar Corp 分離二種材料系統之方法
KR101525274B1 (ko) * 2007-10-26 2015-06-02 크리, 인코포레이티드 하나 이상의 루미퍼를 갖는 조명 장치, 및 이의 제조 방법
US20090142247A1 (en) * 2007-12-03 2009-06-04 Applied Materials, Inc. Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide
CN101477943B (zh) * 2008-01-04 2013-02-13 晶元光电股份有限公司 分离两种材料系统的方法
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US8216867B2 (en) 2009-06-10 2012-07-10 Cree, Inc. Front end scribing of light emitting diode (LED) wafers and resulting devices
WO2011010545A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
TW201209909A (en) * 2010-08-20 2012-03-01 Clean & Amp Green Technology Co Ltd Patterned substrate manufacturing method
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
EP2717335A4 (de) * 2011-05-23 2014-12-03 Namiki Seimitu Houseki Kabushiki Kaisha Verfahren zur herstellung eines lichtemittierenden elements und lichtemittierendes element
US9437783B2 (en) 2012-05-08 2016-09-06 Cree, Inc. Light emitting diode (LED) contact structures and process for fabricating the same
JP2014027093A (ja) * 2012-07-26 2014-02-06 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020123164A1 (en) * 2001-02-01 2002-09-05 Slater David B. Light emitting diodes including modifications for light extraction and manufacturing methods therefor

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1119625B (de) 1956-08-25 1961-12-14 Sony Kabushiki Kaisha Verfahren zum AEtzen der Oberflaeche eines Halbleiterkoerpers
DE3506995A1 (de) 1985-02-27 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von blaulicht-leds und anordnung zur durchfuehrung des verfahrens
US5027168A (en) 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4918497A (en) 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4966862A (en) 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
JPH05145117A (ja) * 1991-11-20 1993-06-11 Sanyo Electric Co Ltd Ｌｅｄモノリシツクドツトマトリツクスの製造方法
US6084175A (en) * 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
US5416342A (en) 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5338944A (en) 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
JPH0797299A (ja) * 1993-09-28 1995-04-11 Nippon Steel Corp ＳｉＣ単結晶の成長方法
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5554482A (en) * 1994-04-25 1996-09-10 Fuji Photo Film Co., Ltd. Silver halide light-sensitive material containing base precursor and polyvinyl alcohol
US5604135A (en) 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5688551A (en) * 1995-11-13 1997-11-18 Eastman Kodak Company Method of forming an organic electroluminescent display panel
EP1531491A2 (de) 1996-04-18 2005-05-18 Matsushita Electric Industrial Co., Ltd. SiC-Bauelement und Verfahren zu seiner Herstellung
US6239033B1 (en) 1998-05-28 2001-05-29 Sony Corporation Manufacturing method of semiconductor device
JP3003027B2 (ja) * 1997-06-25 2000-01-24 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3617929B2 (ja) * 1998-09-24 2005-02-09 シャープ株式会社 半導体発光素子及びその製造方法
JP2000232094A (ja) * 1999-02-10 2000-08-22 Hitachi Ltd 化合物半導体のドライエッチング方法および化合物半導体素子
US6893892B2 (en) * 2000-03-29 2005-05-17 Georgia Tech Research Corp. Porous gas sensors and method of preparation thereof
KR100387242B1 (ko) * 2001-05-26 2003-06-12 삼성전기주식회사 반도체 발광소자의 제조방법
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP2006500767A (ja) 2002-09-19 2006-01-05 クリー　インコーポレイテッド 発光ダイオード及びその製造方法
US6885033B2 (en) * 2003-03-10 2005-04-26 Cree, Inc. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020123164A1 (en) * 2001-02-01 2002-09-05 Slater David B. Light emitting diodes including modifications for light extraction and manufacturing methods therefor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C. J. McHargue et al, "The Reactivity of Ion-implanted SiC", material science and engineering(69), March 1985, J. M. Harris et al, "Identification of the (0001) and the (0001) Surfaces of Silicon Carbide", J. Electrochem. Soc, May 1969, K. Kijima et al, "On the Identification of the Polar Surfaces of SiC Crystals", Journal of Materials Science 7(1972), W. Wesch, "Silicon Carbide: synthesis and processing", Nuclear Instruments and Methods in Physics Research B 116(1996) *

Also Published As

Publication number Publication date
KR20070006794A (ko) 2007-01-11
US7488692B2 (en) 2009-02-10
JP2007531267A (ja) 2007-11-01
CN1950955A (zh) 2007-04-18
US7202181B2 (en) 2007-04-10
TW200540932A (en) 2005-12-16
JP5390548B2 (ja) 2014-01-15
EP1728284A1 (de) 2006-12-06
KR101230812B1 (ko) 2013-02-06
JP2011101055A (ja) 2011-05-19
CA2560688A1 (en) 2005-11-03
US20070173068A1 (en) 2007-07-26
US20050215000A1 (en) 2005-09-29
ATE521993T1 (de) 2011-09-15
WO2005104254A1 (en) 2005-11-03
JP4740942B2 (ja) 2011-08-03
EP1728284B1 (de) 2011-08-24

Similar Documents

Publication Publication Date Title
TWI456626B (zh) 發光裝置之基板蝕刻
US7745240B2 (en) Manufacturing method of light-emitting element with surface layer removal
US7960284B2 (en) III-V compound semiconductor substrate manufacturing method
TW200637041A (en) Nitride semiconductor light-emitting device and method for fabrication thereof
TW200625435A (en) Increasing die strength by etching during or after dicing
TW200717703A (en) Semiconductor device and method for producting the same
JP5887633B1 (ja) 半導体片の製造方法
TW200605985A (en) Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method for semiconductor wafers
CN100407461C (zh) 高发光效率的发光元件的制造方法
JP2004235626A (ja) 半導体装置の製造装置及びその製造方法
JP4639520B2 (ja) 窒化物半導体チップの製造方法
KR20210120058A (ko) 광전 반도체칩의 제조 방법 및 이에 사용되는 본딩 웨이퍼
JP4872753B2 (ja) 窒化物ｌｅｄ素子の製造方法
TW200421472A (en) Method for cutting semiconductor using wafer laser scribing process
TWI608539B (zh) 減少磊晶晶圓缺陷的形成方法
TW200802590A (en) Method for removing surface layer on silicon wafer
CN106098869A (zh) 一种垂直结构led的衬底剥离方法
US20050045591A1 (en) Method of polishing c4 molybdenum masks to remove molybdenum peaks
JP2013077644A (ja) 半導体装置の製造方法
KR101234574B1 (ko) 산소 플라즈마를 이용한 유기성 오염물 제거방법 및 이를 이용한 태양전지용 실리콘 웨이퍼 제조 방법
JP2010045345A (ja) 貼り合わせウェーハの製造方法
RU2352021C1 (ru) Способ обработки поверхности кремниевых пластин
EP1091394A3 (de) Verfahren zur Herstellung von dünnen Halbleiterchips
TWI384643B (zh) Manufacturing method of light emitting diode structure
JP2009182243A (ja) 半導体結晶ウェハの面取部の鏡面加工方法およびその方法で得られるウェハ