TWI456626B - 發光裝置之基板蝕刻 - Google Patents
發光裝置之基板蝕刻 Download PDFInfo
- Publication number
- TWI456626B TWI456626B TW094105990A TW94105990A TWI456626B TW I456626 B TWI456626 B TW I456626B TW 094105990 A TW094105990 A TW 094105990A TW 94105990 A TW94105990 A TW 94105990A TW I456626 B TWI456626 B TW I456626B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- etching
- tantalum carbide
- light
- aqueous
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract 97
- 238000005530 etching Methods 0.000 title claims abstract 69
- 238000004519 manufacturing process Methods 0.000 claims abstract 8
- 238000000034 method Methods 0.000 claims 51
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 30
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 13
- 229910052799 carbon Inorganic materials 0.000 claims 13
- 229910052594 sapphire Inorganic materials 0.000 claims 4
- 239000010980 sapphire Substances 0.000 claims 4
- 238000005286 illumination Methods 0.000 claims 3
- 238000003763 carbonization Methods 0.000 claims 1
- 238000000227 grinding Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Led Devices (AREA)
- Dicing (AREA)
Claims (55)
- 一種製造一包括一具有第一及第二對置表面之碳化矽基板及一位於該基板之一第一表面上之發光元件的發光裝置之方法,其包括:使用一水性蝕刻來直接蝕刻該碳化矽基板之該第二表面,以移除因處理該基板而造成之該基板之一受損部分。
- 如請求項1之方法,其中該碳化矽基板之該第二表面之該受損部分係因鋸割該基板、研磨該基板、拋光該基板、在該基板中實施植入及/或用雷射光處理該基板而造成。
- 如請求項1之方法,其中直接蝕刻該碳化矽基板之該第二表面係在自一晶圓單分出該發光裝置後實施。
- 如請求項1之方法,其中直接蝕刻該碳化矽基板之該第二表面係在自一晶圓單分出該發光裝置之前實施。
- 如請求項1之方法,其中該水性蝕刻包括一使用KOH:K3 Fe(CN)6 之蝕刻。
- 如請求項1之方法,其中直接蝕刻該碳化矽基板之該第二表面進一步包括蝕刻該碳化矽基板之一碳面表面。
- 如請求項6之方法,其中該碳化矽基板之該碳面表面包括該基板之一側壁之一碳面表面。
- 如請求項1之方法,其中直接蝕刻該碳化矽基板之該第二表面進一步包括蝕刻該碳化矽基板之一非碳面表面。
- 如請求項1之方法,其中直接蝕刻該碳化矽基板之該第 二表面包括直接蝕刻一相對該碳化矽基板之該第二表面傾斜之表面。
- 一種增加一發光裝置之光輸出之方法,其包括:使用一水性蝕刻來蝕刻該發光裝置之一碳化矽或藍寶石基板,以至少部分地移除該發光裝置之該基板之一光吸收區域,其中該光吸收區域對應於因在製造該發光裝置中處理該基板而受損的該基板之一區域。
- 如請求項10之方法,其中因處理該基板而受損之該基板之該區域對應於該基板中之一鋸槽。
- 如請求項10之方法,其中因處理該基板而受損之該基板之該區域對應於該基板的一受研磨、拋光、植入及/或雷射光處理之區域。
- 如請求項10之方法,其中該基板包括一碳化矽基板。
- 如請求項13之方法,其中蝕刻一基板包括蝕刻該碳化矽基板之一碳面。
- 如請求項14之方法,其中蝕刻一基板進一步包括蝕刻該碳化矽基板之一非碳面。
- 如請求項13之方法,其中蝕刻一基板包括蝕刻該碳化矽基板之一碳面側壁。
- 如請求項10之方法,其中該基板包括一藍寶石基板。
- 如請求項10之方法,其中蝕刻一基板係在單分該發光裝置之後實施。
- 如請求項10之方法,其中該水性蝕刻包括使用KOH:K3 Fe(CN)6 實施蝕刻。
- 如請求項19之方法,其中實施該水性蝕刻至少約50分鐘。
- 如請求項19之方法,其中在一至少約80℃之溫度下實施該水性蝕刻。
- 如請求項10之方法,其中蝕刻一基板包括直接蝕刻該基板。
- 一種製造一發光裝置之方法,其包括:透過至少部分地移除該發光裝置之碳化矽或藍寶石基板之一光吸收區域,以使用一水性蝕刻及使用足以增加經由該基板抽取的一光量之蝕刻參數來蝕刻該發光裝置之該基板。
- 如請求項23之方法,其中蝕刻一基板包括蝕刻一基板以移除因在製造該發光裝置中處理該基板而受損之該基板之一區域之至少一部分。
- 如請求項24之方法,其中因處理該基板而受損之該基板之該區域對應於該基板中之一鋸槽。
- 如請求項24之方法,其中因處理該基板而受損之該基板之該區域對應於該基板的一受研磨、拋光、植入及/或雷射光處理之區域。
- 如請求項23之方法,其中該基板包括一碳化矽基板。
- 如請求項27之方法,其中蝕刻一基板包括蝕刻該碳化矽基板之一碳面。
- 如請求項28之方法,其中蝕刻一基板進一步包括蝕刻該碳化矽基板之一非碳面。
- 如請求項28之方法,其中蝕刻一基板進一步包括蝕刻該碳化矽基板之一碳面側壁。
- 如請求項23之方法,其中該基板包括一藍寶石基板。
- 如請求項23之方法,其中蝕刻一基板係在單分該發光裝置之後實施。
- 如請求項32之方法,其中該水性蝕刻包括使用KOH:K3 Fe(CN)6 實施蝕刻。
- 如請求項33之方法,其中實施該水性蝕刻至少約50分鐘。
- 如請求項34之方法,其中該水性蝕刻係在一至少約80℃之溫度下實施。
- 如請求項33之方法,其中蝕刻一基板包括直接蝕刻該基板。
- 一種製造一發光裝置之方法,其包括:使用一水性蝕刻來蝕刻該發光裝置之一碳化矽基板,以自該發光裝置之該碳化矽基板之一表面移除至少一部分非晶碳化矽。
- 如請求項37之方法,其中該非晶碳化矽對應於因在製造該發光裝置中處理該基板而受損之該基板之一區域。
- 如請求項38之方法,其中因處理該基板而受損之該基板之該區域對應於該基板中之一鋸槽。
- 如請求項38之方法,其中因處理該基板而受損之該基板之該區域對應於該基板的一受研磨、拋光、植入及/或雷射光處理之區域。
- 如請求項37之方法,其中蝕刻該基板係在單分該發光裝置之後實施。
- 如請求項37之方法,其中該水性蝕刻包括使用KOH:K3 Fe(CN)6 實施蝕刻。
- 如請求項42之方法,其中實施該水性蝕刻至少約50分鐘。
- 如請求項42之方法,其中該水性蝕刻係在一至少約80℃之溫度下實施。
- 如請求項37之方法,其中該蝕刻一基板包括直接蝕刻該基板。
- 一種製造一發光裝置之方法,其包括:鋸割該發光裝置之一碳化矽基板;及蝕刻該發光裝置之該碳化矽基板之至少一個經鋸割表面。
- 如請求項46之方法,其中蝕刻至少一個經鋸割表面包括蝕刻該碳化矽基板之一碳面。
- 如請求項46之方法,其中蝕刻至少一個經鋸割表面進一步包括蝕刻該碳化矽基板之一非碳面。
- 如請求項46之方法,其中蝕刻至少一個經鋸割表面進一步包括蝕刻該碳化矽基板之一碳面側壁。
- 如請求項46之方法,其中蝕刻至少一個經鋸割表面係在單分該發光裝置之後實施。
- 如請求項46之方法,其中蝕刻至少一個經鋸割表面包括對該基板執行一水性蝕刻。
- 如請求項51之方法,其中該水性蝕刻包括使用KOH:K3 Fe(CN)6 實施蝕刻。
- 如請求項52之方法,其中實施該水性蝕刻至少約50分鐘。
- 如請求項52之方法,其中該水性蝕刻係在一至少約80℃之溫度下實施。
- 如請求項46之方法,其中蝕刻至少一個經鋸割表面包括直接蝕刻至少一個經鋸割表面。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/811,350 US7202181B2 (en) | 2004-03-26 | 2004-03-26 | Etching of substrates of light emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200540932A TW200540932A (en) | 2005-12-16 |
TWI456626B true TWI456626B (zh) | 2014-10-11 |
Family
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094105990A TWI456626B (zh) | 2004-03-26 | 2005-03-01 | 發光裝置之基板蝕刻 |
Country Status (9)
Country | Link |
---|---|
US (2) | US7202181B2 (zh) |
EP (1) | EP1728284B1 (zh) |
JP (2) | JP4740942B2 (zh) |
KR (1) | KR101230812B1 (zh) |
CN (1) | CN1950955A (zh) |
AT (1) | ATE521993T1 (zh) |
CA (1) | CA2560688A1 (zh) |
TW (1) | TWI456626B (zh) |
WO (1) | WO2005104254A1 (zh) |
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2004
- 2004-03-26 US US10/811,350 patent/US7202181B2/en active Active
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2005
- 2005-01-24 KR KR1020067019702A patent/KR101230812B1/ko active IP Right Grant
- 2005-01-24 CA CA002560688A patent/CA2560688A1/en not_active Abandoned
- 2005-01-24 JP JP2007504944A patent/JP4740942B2/ja active Active
- 2005-01-24 WO PCT/US2005/001934 patent/WO2005104254A1/en not_active Application Discontinuation
- 2005-01-24 CN CN200580009426.2A patent/CN1950955A/zh active Pending
- 2005-01-24 AT AT05711774T patent/ATE521993T1/de not_active IP Right Cessation
- 2005-01-24 EP EP05711774A patent/EP1728284B1/en active Active
- 2005-03-01 TW TW094105990A patent/TWI456626B/zh active
-
2007
- 2007-02-26 US US11/710,838 patent/US7488692B2/en not_active Expired - Lifetime
-
2011
- 2011-02-10 JP JP2011027409A patent/JP5390548B2/ja active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020123164A1 (en) * | 2001-02-01 | 2002-09-05 | Slater David B. | Light emitting diodes including modifications for light extraction and manufacturing methods therefor |
Non-Patent Citations (1)
Title |
---|
C. J. McHargue et al, "The Reactivity of Ion-implanted SiC", material science and engineering(69), March 1985, J. M. Harris et al, "Identification of the (0001) and the (0001) Surfaces of Silicon Carbide", J. Electrochem. Soc, May 1969, K. Kijima et al, "On the Identification of the Polar Surfaces of SiC Crystals", Journal of Materials Science 7(1972), W. Wesch, "Silicon Carbide: synthesis and processing", Nuclear Instruments and Methods in Physics Research B 116(1996) * |
Also Published As
Publication number | Publication date |
---|---|
CN1950955A (zh) | 2007-04-18 |
EP1728284B1 (en) | 2011-08-24 |
US7488692B2 (en) | 2009-02-10 |
JP4740942B2 (ja) | 2011-08-03 |
US7202181B2 (en) | 2007-04-10 |
US20050215000A1 (en) | 2005-09-29 |
TW200540932A (en) | 2005-12-16 |
CA2560688A1 (en) | 2005-11-03 |
WO2005104254A1 (en) | 2005-11-03 |
JP5390548B2 (ja) | 2014-01-15 |
KR20070006794A (ko) | 2007-01-11 |
JP2011101055A (ja) | 2011-05-19 |
US20070173068A1 (en) | 2007-07-26 |
EP1728284A1 (en) | 2006-12-06 |
ATE521993T1 (de) | 2011-09-15 |
KR101230812B1 (ko) | 2013-02-06 |
JP2007531267A (ja) | 2007-11-01 |
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