TW200802590A - Method for removing surface layer on silicon wafer - Google Patents

Method for removing surface layer on silicon wafer

Info

Publication number
TW200802590A
TW200802590A TW96104871A TW96104871A TW200802590A TW 200802590 A TW200802590 A TW 200802590A TW 96104871 A TW96104871 A TW 96104871A TW 96104871 A TW96104871 A TW 96104871A TW 200802590 A TW200802590 A TW 200802590A
Authority
TW
Taiwan
Prior art keywords
surface layer
silicon wafer
negative electrode
electrode plate
vacuum vessel
Prior art date
Application number
TW96104871A
Other languages
Chinese (zh)
Inventor
Shoichi Kakuya
Hiroshi Yamada
Original Assignee
Kyushu Dentsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyushu Dentsu Co Ltd filed Critical Kyushu Dentsu Co Ltd
Publication of TW200802590A publication Critical patent/TW200802590A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02079—Cleaning for reclaiming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention provides a method for removing the surface layer on a silicon wafer, whereby the surface layer on a silicon wafer can be removed by a dry process without using a solvent and without the need for mechanical grinding and post-washing, allowing the silicon substrate to be repeatedly used even after being subjected to a number of times of surface layer removal and regeneration, and enabling one to plan to effectively use the silicon substrate. For example, a negative electrode plate 3 is placed in a vacuum vessel 2, a silicon wafer 1, on which a surface layer la of Sin film having a thickness of 200 nm is deposited, on the negative electrode plate 3, CF4 gas is introduced at 4.7 CCM into the vacuum vessel 1, and etching is carried out for 10 minutes while retaining a pressure of 3 militorr and applying a power of 200 watts by a power source 5b.
TW96104871A 2006-02-10 2007-02-09 Method for removing surface layer on silicon wafer TW200802590A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006034072 2006-02-10
JP2007011897A JP5103025B2 (en) 2006-02-10 2007-01-22 Method for removing surface layer of silicon wafer

Publications (1)

Publication Number Publication Date
TW200802590A true TW200802590A (en) 2008-01-01

Family

ID=38345312

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96104871A TW200802590A (en) 2006-02-10 2007-02-09 Method for removing surface layer on silicon wafer

Country Status (4)

Country Link
JP (1) JP5103025B2 (en)
KR (1) KR20080100187A (en)
TW (1) TW200802590A (en)
WO (1) WO2007091726A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5047100B2 (en) * 2008-08-27 2012-10-10 株式会社三電舎 Method for recycling used semiconductor wafers
CN102593285B (en) * 2012-03-06 2014-07-09 华灿光电股份有限公司 Method for recovering pattern sapphire substrate
CN105655453A (en) * 2016-03-08 2016-06-08 映瑞光电科技(上海)有限公司 Method for recycling and reusing sapphire substrates
JP6801574B2 (en) * 2017-05-15 2020-12-16 三菱電機株式会社 Semiconductor manufacturing equipment
JP6570045B2 (en) * 2017-11-07 2019-09-04 株式会社ハイシック Compound semiconductor wafer processing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3492933B2 (en) * 1999-03-30 2004-02-03 九州電通株式会社 Etching method for crystalline lens
JP2001110783A (en) * 1999-10-12 2001-04-20 Hitachi Ltd Apparatus and method for plasma treatment
JPWO2002049089A1 (en) * 2000-12-14 2004-04-15 東京エレクトロン株式会社 Method for etching porous insulating film, dual damascene process, and semiconductor device

Also Published As

Publication number Publication date
KR20080100187A (en) 2008-11-14
JP2007243159A (en) 2007-09-20
JP5103025B2 (en) 2012-12-19
WO2007091726A1 (en) 2007-08-16

Similar Documents

Publication Publication Date Title
TW200802603A (en) Method for removing damaged dielectric material
SG148971A1 (en) Substrates and methods of using those substrates
WO2009031270A1 (en) Wafer reclamation method and wafer reclamation apparatus
WO2009114120A3 (en) Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
WO2007111837A3 (en) Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material
TW200802590A (en) Method for removing surface layer on silicon wafer
ATE524824T1 (en) METHOD FOR RESTORING ETCH RATE AND UNIFORMITY IN SILICON ELECTRODE ARRANGEMENTS
TW200731410A (en) Manufacturing method of semiconductor apparatus and surface processing method of SiN and SiO2 film
WO2002075804A3 (en) Planarization of substrates using electrochemical mechanical polishing
TW200618104A (en) Post-etch treatment to remove residues
TWI456626B (en) Etching of substrates of light emitting devices
TW200615715A (en) Semiconductor processing using energized hydrogen gas and in combination with wet cleaning
TW200723379A (en) Substrate processing apparatus and substrate processing method
WO2006028858A3 (en) Methods of removing photoresist on substrates
WO2007120573A3 (en) Plasma dielectric etch process including ex-situ backside polumer removal for low-dielectric constant material
EP1884989A3 (en) Semiconductor device and method of manufacturing the same
TW200722506A (en) Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
CA2583683A1 (en) Surface reconstruction method for silicon carbide substrate
US20060160364A1 (en) Refreshing wafers having low-k dielectric materials
SG142270A1 (en) Integrated method for removal of halogen residues from etched substrates by thermal process
TW200603275A (en) Semiconductor device and fabrication method thereof
TW200625440A (en) Wafer bevel polymer removal
TW200717628A (en) Wafer edge cleaning process
TW200502718A (en) Methods of removing photoresist from substrates
TW200739698A (en) Method of manufacturing semiconductor device and cleaning apparatus