JP2007243159A - Method for removing surface layer of silicon wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for removing the surface layer of a silicon wafer capable of removing the surface layer of the silicon wafer by a dry process without using a solution nor requiring mechanical polishing operation and cleaning after the process, repeatedly using a silicon substrate even after performing reclaiming/removing processes many times, and contriving the effective use of the silicon substrate. <P>SOLUTION: A negative plate 3 is arranged in a vacuum vessel 1, and a silicon wafer 1 with the surface layer 1a of an SiN film having a thickness of 200 nm attached is placed on the negative plate 3. A CF<SB>4</SB>gas of 4.7 CCM is introduced into the vacuum vessel 1, and the inside of the vacuum vessel 1 is kept at 3 mtorr. An output power of 200 W is applied on an RF power supply 5b at a magnetic flux density of 300 gauss, and etching is performed for 10 minutes. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention can be reused as a recycled wafer by removing a surface layer / film (hereinafter simply referred to as a surface layer) from a wafer having a surface layer / film attached to the surface of a silicon wafer used in semiconductor manufacturing or the like. It is related to the technology.

Currently, there are four types of silicon wafers used in semiconductor manufacturing processes: prime wafer, mirror wafer, dummy wafer, and mechanical wafer. 1 prime wafer is a new IC product wafer, 2 mirror wafer is used for analysis and inspection and has the same level of surface accuracy as prime wafer, 3 dummy wafer is for transfer test and robot test. The wafers that must be used before using the 4-mechanical dummy wafer are wafers that machine equipment companies use for processing.
In the semiconductor manufacturing process, before a prime wafer is flowed, a dummy wafer is always flowed through the process in advance, and conditions are confirmed and semiconductors are produced. As this dummy wafer, a reclaimed wafer is generally used, and a wafer on which various surface layers are formed in each process of each company is regenerated and used. The surface layer includes a silicon film, a metal film, and an insulating film.
The reclaimed wafer is used as a dummy wafer, and in the case of an 8-inch wafer, it is used in the range of 725 μm ± 25 μm.

The conventional regeneration method is performed by a wet process. First, a surface layer formed by a chemical solution is removed, and polishing is performed for several to tens of microns to remove roughness of the silicon surface, and cleaning is performed to remove impurities and particles. Polishing must be performed for regeneration, and the wafer thickness is reduced, so the number of reproducible times is about 3 to 5 times.
In addition, there are films (SiOC, SiC, SiN, SiON, etc.) that cannot be removed by chemical treatment, and some wafers cannot be regenerated.
On the other hand, the present applicant has developed a technique for thinning the lens body by plasma. The technology has been filed and is known as Japanese Patent Laid-Open No. 2000-286236. However, in this technique, the crystalline substance of the crystalline lens body is etched, and the object, material, and application to be removed are different from those for removing the surface coating of the silicon wafer, and the conventional liquid agent, mechanical polishing and cleaning are used. It is understood that the method of removing the surface layer of the silicon wafer is different from the method of the dry processing in the vacuum space, and can be used for removing the surface layer of the silicon wafer for the purpose of the present invention. There wasn't.
JP 2000-286236 A

  The present invention eliminates these conventional problems, removes the surface layer by a dry process without using a liquid agent, and extremely reduces the thickness of the silicon substrate for each treatment. The reduction is small and can be regenerated many times. Furthermore, films (SiOC, SiC, SiN, SiON) that could not be removed by conventional chemical treatment can be removed, and dummy wafers that have been disposed of up to now can be reclaimed. An object of the present invention is to provide an excellent method for removing a surface layer of a silicon wafer.

The configuration of the present invention that solves this problem is as follows.
1) A high-density plasma is generated by ionizing electrons in an electron stream in a vacuum vessel filled with a dilute etching gas, and the high-density plasma is attached to the surface of a silicon wafer placed in the vacuum vessel. A method of removing a surface layer of a silicon wafer characterized by etching and removing the surface layer 2) A dilute etching gas is sealed in a vacuum vessel, and the silicon wafer to which the surface layer is attached is attached to a negative electrode and the vacuum vessel In addition, the positive electrode is arranged on the outer periphery so as to sandwich the negative electrode, a DC voltage or an alternating voltage is applied to the positive and negative electrodes to form an electric field, and a magnetic field is applied so as to be orthogonal to the direction of the electric field. An electron stream rotating around the silicon wafer is formed, and the etching gas is separated by the electrons in the electron stream to generate a high-density uniform plasma. Removing method 3) an etching gas in the surface layer of the silicon wafer and removing the surface layer by etching is a fluorinated carbon (CF _4), an electric field and a DC electric field, which in an oxygen gas 10-30 The method for removing a surface layer of a silicon wafer according to 1) or 2) added at a mixing ratio of 4% 4) The method for removing a surface layer of a silicon wafer according to any one of 1) to 3) above wherein the magnetic field is an alternating magnetic field The surface layer is a silicon-based or insulating-based film, and the method for removing a surface layer of a silicon wafer according to any one of the above 1) to 4) using a fluorine-based etching gas as an etching gas 6) The surface layer is a metal-based film The method for removing a surface layer of a silicon wafer according to any one of 1) to 4) using a chlorine-based etching gas.

According to the present invention, only the surface layer can be removed by etching in a dry process, and the thickness of the silicon base material is hardly reduced, and the silicon base material can be used repeatedly for a long time even if it is regenerated and removed many times. It excels in the recycling efficiency of the silicon substrate, and the silicon substrate cost can be reduced.
Since no liquid agent is used in the removal process, the process is simple and the disposal process is simple. Further, the silicon substrate of the removed silicon wafer is not required to be cleaned.

Examples of the surface layer (film) of the silicon wafer that can be removed by the present invention include silicon (Si, Poly Si, a-Si, WSix, etc.), metal (Al, W, Ti, Al-Si, etc.), and an insulating film. There are a system (SiO ₂ , SiOC, SiC, SiON, SiN, SOG, etc.), an organic system (MSQ: methylsilsesquioxane, polyimide, etc.) and the like.
As the etching gas of the present invention, an appropriate gas is selected for the surface layer according to the material. Fluorine etching gas (CF ₄ , C ₂ F _8, etc.) such as fluorine gas CF ₄ is used for silicon, insulating and organic surface layers, and chlorine gas (Cl ₄ ) is used for metal surface layers. ₂ , CCl ₄ etc.). Other gases (argon gas Ar, oxygen gas O _2, etc.) may be added. The concentration of the etching gas is about 10 ⁻² to 10 ⁻³ torr.
When the surface layer is not a single layer but a plurality of layers, two or more kinds of etching gases are supplied to selectively perform etching according to each layer.
The electric field of the present invention includes a DC voltage application method and a radio frequency voltage (RF) application method. In the case of DC voltage application, a power source of about 500 mA-1 KV and an RF voltage of about 200 W are used, and an external magnetic field type magnetron discharge. Enable.
There is also a method of applying a magnetic field in one direction and an alternating magnetic field that alternately changes the direction. An alternating magnetic field that is alternately reversed is preferable in terms of improving etching uniformity.
As the electrode plate on which the silicon wafer of the present invention is placed, it is preferable to use a SUS316 plate that has been surface-treated to prevent contamination by sputtering, or that it is protected by a glass cover or the like.
In order not to cut the silicon wafer main body, it is possible to accurately control the etching gas, voltage, electric field, magnetic field strength and application time.

Hereinafter, Example 1 will be described in detail.
Example 1 is a method for removing a surface layer of an organic material having a thickness of several μm formed on a 200 mm diameter silicon wafer having a thickness of about 725 μm, using CF ₄ gas as an etching gas, In this example, an alternating voltage of 200 W is applied, and a magnetic field of 300 gauss is applied as a magnetic density in the silicon wafer by a coil outside the container.

FIG. 1 is an explanatory diagram illustrating an apparatus for a method for removing a surface layer of a silicon wafer according to a first embodiment.
FIG. 2 is an explanatory diagram showing the direction of magnetic field, electric field, and electron flow and etching state of Example 1.
FIG. 3 is an explanatory diagram illustrating the phenomenon of surface layer removal according to the first embodiment.

In the figure, 1 is a silicon wafer having a diameter of 200 mm and a thickness of 725 μm to be etched, 1 a is a surface layer of an organic material on the surface of the silicon wafer, 2 is a square vacuum vessel of 250 mm × 150 mm and 751 mm in length, 3 is 200 mm × 400 mm cathode plate by SUS316 mounted with a silicon wafer, 4 is a coil disposed outside the vacuum vessel 2 for generating a magnetic field, 4a is a coil-applied DC power supply, 4b is a coil-applied AC power supply, and 4c is a DC-AC changeover switch 5 is a power supply unit for generating a DC and RF power source for generating an electric field with a changeover switch, 5a is a DC power source for generating a direct current voltage of 500 mA to 1 kV, and 5b is an alternating voltage of 13.56 MHz with a maximum output of 500 W. RF power, 5c is DC and RF power changeover switch, the cylinder of CF ₄ in the etching gas 6, The additive gas Ar, bomb _{O 2,} 8 is a cylinder of _{N 2,} 9 140 liters / sec turbomolecular pump, 10 is 170 liters / min rotary pump.

A silicon wafer 1 having a diameter of 200 mm and a thickness of 725 μm and a surface layer 1 a of several μm is placed on the cathode plate 3 and evacuated to high vacuum. As an etching condition, 4.7 CCM of an etching gas, CF ₄ gas, was introduced to maintain 3 mtorr, and etching was performed for 10 minutes at a magnetic flux density of 300 gauss and an RF output of 200 W. Thereafter, 4.7 CCM of Ar gas was introduced for the purpose of preventing contamination by degassing molecules from the inner wall of the vacuum vessel 2, and Ar ion cleaning was performed for 1 minute at an operating pressure of 3 mtorr, a magnetic flux density of 300 gauss, and an RF output of 50 W. It was. It was observed that the surface of the silicon wafer after the etching treatment was a mirror surface by visual observation. As a result of analysis by SEM, the surface was a silicon substrate. From these, it was demonstrated that it is possible to remove only the insulating surface layer without roughening the silicon surface by plasma.

  With respect to the surface layer of the other organic film, the surface layer could be similarly removed by etching for 30 minutes in the multilayer film (three layers) by etching for 10 minutes under the same conditions as in the above example.

  In the second embodiment, the SiN film of the surface layer 1a is removed by etching from the silicon wafer with a surface layer in which the surface layer 1a on the silicon wafer 1 is an insulating film of about 200 nm of the SiN film, using the apparatus of the first embodiment. In this example, the apparatus, etching gas, voltage, and magnetic field were removed by etching for 10 minutes under the same conditions as in Example 1.

FIG. 4 is an explanatory diagram showing the time course of the intensity of the emission spectrum during film removal in Example 2. FIG.
FIG. 5 is an explanatory diagram of ESCA analysis by X-ray photoelectron spectroscopy before and after film removal processing of the wafer of Example 2.

In Example 2, a silicon wafer 1 having a surface layer 1a of a SiN film having a thickness of about 200 nm attached to the surface of a silicon wafer 1 having a diameter of 200 mm and a thickness of 725 μm is placed on the cathode plate 3 and evacuated to a high vacuum. As an etching condition, 4.7 CCM of CF ₄ gas as an etching gas was introduced to maintain 3 mtorr, and etching was performed for 10 minutes at a magnetic flux density of 300 gauss and an RF output of 200 W.

FIG. 4 shows the intensity-wavelength distribution of the emission spectrum from T1 (0 minutes) at the start of etching in this example, at T2 after 3 minutes, at T3 after 6 minutes, and at T4 after 10 minutes. The emission spectrum is shown on the left side, and the removal state of the surface layer 1a of the SiN film (change in the thickness of the surface layer) is shown on the right side. Thus, the surface layer 1a was completely removed by etching for 10 minutes.
FIG. 5 shows ESCA analysis results of the silicon wafer before the start of etching and after the etching process for 10 minutes. As can be seen from this, the N1s1 / 2 peak at 398.5 eV disappeared, and it was confirmed that the surface layer 1a of the SiN film was completely removed.
Furthermore, even when the surface of the etched silicon wafer 1 was observed by SEM at a magnification of 10,000, it was confirmed that the surface was uniform without damage.
It was observed that the surface of the silicon wafer 1 was a mirror surface also by visual observation after the etching process.
From these, it was demonstrated that it is possible to remove only the insulating surface layer without roughening the silicon surface by plasma.

  Thereafter, 4.7 CCM of Ar gas was introduced for the purpose of preventing contamination by degassing molecules from the inner wall of the vacuum vessel 2, and Ar ion cleaning was performed for 1 minute at an operating pressure of 3 mtorr, a magnetic flux density of 300 gauss, and an RF output of 50 W. It was.

  The present invention is the removal of the surface layer of the silicon wafer. However, if the material of the surface layer of the silicon wafer is made different, it can be used for removing only a part of the surface layer. It can also be used for wafers other than silicon.

It is explanatory drawing which shows the apparatus of the surface layer removal method of the silicon wafer of Example 1. FIG. It is explanatory drawing which shows the direction of a magnetic field, an electric field, and an electron flow of Example 1, and an etching state. 6 is an explanatory diagram illustrating a phenomenon of surface layer removal according to Example 1. FIG. It is explanatory drawing which shows the time passage of the intensity | strength of the emission spectrum during film | membrane removal of Example 2. FIG. It is explanatory drawing of the ESCA analysis by the X-ray photoelectron spectroscopy before the film | membrane removal process of the wafer of Example 2, and after a process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Silicon wafer 1a Surface layer 2 Vacuum container 3 Cathode plate 4 Coil 4a Coil application direct current power supply 4b Coil application alternating current power supply 4c DC alternating current changeover switch 5 Power supply part 5a DC power supply 5b RF power supply 5c Power supply changeover switch 6 CF ₄ cylinders 7, 8 cylinders 9 Turbo molecular pump 10 Rotary pump

Claims (6)

A high-density plasma is generated by ionizing the etching gas with electrons in a vacuum vessel filled with a dilute etching gas, and the surface layer is attached to the surface of the silicon wafer placed in the vacuum vessel with the high-density plasma. A method for removing a surface layer of a silicon wafer, wherein the surface layer is removed by etching. A silicon wafer with a dilute etching gas sealed in a vacuum vessel and attached with a surface layer is attached to the negative electrode and placed in the vacuum vessel, and a positive electrode is placed on the outer periphery so as to sandwich the negative electrode, and the positive and negative electrodes An electric field is formed by applying a DC voltage or an alternating voltage to the substrate, and a magnetic field is applied so as to be orthogonal to the direction of the electric field to form an electron stream that rotates around the silicon wafer. A method for removing a surface layer of a silicon wafer, comprising separating and generating a high-density uniform plasma and etching the silicon wafer with the plasma to remove the surface layer. The method for removing a surface layer of a silicon wafer according to claim 1 or 2, wherein the etching gas is carbon fluoride (CF ₄ ), the electric field is a DC electric field, and oxygen gas is added thereto in a mixing ratio of 10 to 30%. The method for removing a surface layer of a silicon wafer according to claim 1, wherein the magnetic field is an alternating magnetic field. The method for removing a surface layer of a silicon wafer according to any one of claims 1 to 4, wherein the surface layer is a silicon-based or insulating-based film, and a fluorine-based etching gas is used as an etching gas. The method for removing a surface layer of a silicon wafer according to any one of claims 1 to 4, wherein the surface layer is a metal-based film and a chlorine-based etching gas is used.

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