ATE521993T1 - Ätzen von substraten für lichtemittierende bauelemente - Google Patents

Ätzen von substraten für lichtemittierende bauelemente

Info

Publication number
ATE521993T1
ATE521993T1 AT05711774T AT05711774T ATE521993T1 AT E521993 T1 ATE521993 T1 AT E521993T1 AT 05711774 T AT05711774 T AT 05711774T AT 05711774 T AT05711774 T AT 05711774T AT E521993 T1 ATE521993 T1 AT E521993T1
Authority
AT
Austria
Prior art keywords
substrate
etch
light
emitting components
etching substrates
Prior art date
Application number
AT05711774T
Other languages
English (en)
Inventor
Gerald H Negley
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE521993T1 publication Critical patent/ATE521993T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
AT05711774T 2004-03-26 2005-01-24 Ätzen von substraten für lichtemittierende bauelemente ATE521993T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/811,350 US7202181B2 (en) 2004-03-26 2004-03-26 Etching of substrates of light emitting devices
PCT/US2005/001934 WO2005104254A1 (en) 2004-03-26 2005-01-24 Etching of substrates of light emitting devices

Publications (1)

Publication Number Publication Date
ATE521993T1 true ATE521993T1 (de) 2011-09-15

Family

ID=34960471

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05711774T ATE521993T1 (de) 2004-03-26 2005-01-24 Ätzen von substraten für lichtemittierende bauelemente

Country Status (9)

Country Link
US (2) US7202181B2 (de)
EP (1) EP1728284B1 (de)
JP (2) JP4740942B2 (de)
KR (1) KR101230812B1 (de)
CN (1) CN1950955A (de)
AT (1) ATE521993T1 (de)
CA (1) CA2560688A1 (de)
TW (1) TWI456626B (de)
WO (1) WO2005104254A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150393A (ja) * 2003-11-14 2005-06-09 Sharp Corp 受発光素子用サブマウント
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
CN101385145B (zh) 2006-01-05 2011-06-08 伊鲁米特克斯公司 用于引导来自led的光的分立光学装置
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
KR101408622B1 (ko) 2006-01-20 2014-06-17 크리, 인코포레이티드 루미포르 필름의 공간적 분리에 의한 고체 상태 발광기의 스펙트럼 컨텐츠 시프팅
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
JP2008028259A (ja) * 2006-07-24 2008-02-07 Mitsubishi Chemicals Corp 単結晶ＧａＮ基板の製造方法
KR20090048640A (ko) 2006-08-23 2009-05-14 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치 및 조명 방법
KR101262386B1 (ko) 2006-09-25 2013-05-08 엘지이노텍 주식회사 질화물 반도체 발광소자의 제조 방법
US20090275157A1 (en) * 2006-10-02 2009-11-05 Illumitex, Inc. Optical device shaping
JP2010506402A (ja) * 2006-10-02 2010-02-25 イルミテックス， インコーポレイテッド Ｌｅｄのシステムおよび方法
US7863635B2 (en) 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
TWI416615B (zh) * 2007-10-16 2013-11-21 Epistar Corp 分離二種材料系統之方法
KR101525274B1 (ko) * 2007-10-26 2015-06-02 크리, 인코포레이티드 하나 이상의 루미퍼를 갖는 조명 장치, 및 이의 제조 방법
US20090142247A1 (en) * 2007-12-03 2009-06-04 Applied Materials, Inc. Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide
CN101477943B (zh) * 2008-01-04 2013-02-13 晶元光电股份有限公司 分离两种材料系统的方法
WO2009100358A1 (en) 2008-02-08 2009-08-13 Illumitex, Inc. System and method for emitter layer shaping
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US8216867B2 (en) 2009-06-10 2012-07-10 Cree, Inc. Front end scribing of light emitting diode (LED) wafers and resulting devices
WO2011010545A1 (en) * 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
TW201209909A (en) * 2010-08-20 2012-03-01 Clean & Amp Green Technology Co Ltd Patterned substrate manufacturing method
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US9065032B2 (en) 2011-05-23 2015-06-23 Namiki Seimitsu Houseki Kabushikikaisha Method for manufacturing light-emitting element, and light-emitting element
US9437783B2 (en) 2012-05-08 2016-09-06 Cree, Inc. Light emitting diode (LED) contact structures and process for fabricating the same
JP2014027093A (ja) * 2012-07-26 2014-02-06 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1119625B (de) 1956-08-25 1961-12-14 Sony Kabushiki Kaisha Verfahren zum AEtzen der Oberflaeche eines Halbleiterkoerpers
DE3506995A1 (de) 1985-02-27 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von blaulicht-leds und anordnung zur durchfuehrung des verfahrens
US4918497A (en) 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5027168A (en) 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4966862A (en) 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
JPH05145117A (ja) * 1991-11-20 1993-06-11 Sanyo Electric Co Ltd Ｌｅｄモノリシツクドツトマトリツクスの製造方法
US6084175A (en) * 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
US5416342A (en) 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5338944A (en) 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
JPH0797299A (ja) * 1993-09-28 1995-04-11 Nippon Steel Corp ＳｉＣ単結晶の成長方法
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5554482A (en) * 1994-04-25 1996-09-10 Fuji Photo Film Co., Ltd. Silver halide light-sensitive material containing base precursor and polyvinyl alcohol
US5604135A (en) 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US5688551A (en) * 1995-11-13 1997-11-18 Eastman Kodak Company Method of forming an organic electroluminescent display panel
KR100312568B1 (ko) 1996-04-18 2003-06-19 마쯔시다덴기산교 가부시키가이샤 Sic 소자 및 그 제조방법
US6239033B1 (en) 1998-05-28 2001-05-29 Sony Corporation Manufacturing method of semiconductor device
JP3003027B2 (ja) * 1997-06-25 2000-01-24 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3617929B2 (ja) * 1998-09-24 2005-02-09 シャープ株式会社 半導体発光素子及びその製造方法
JP2000232094A (ja) * 1999-02-10 2000-08-22 Hitachi Ltd 化合物半導体のドライエッチング方法および化合物半導体素子
US6893892B2 (en) * 2000-03-29 2005-05-17 Georgia Tech Research Corp. Porous gas sensors and method of preparation thereof
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
KR100387242B1 (ko) * 2001-05-26 2003-06-12 삼성전기주식회사 반도체 발광소자의 제조방법
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
KR20110118848A (ko) 2002-09-19 2011-11-01 크리 인코포레이티드 경사 측벽을 포함하고 인광물질이 코팅된 발광 다이오드, 및 그의 제조방법
US6885033B2 (en) * 2003-03-10 2005-04-26 Cree, Inc. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same

Also Published As

Publication number Publication date
JP2011101055A (ja) 2011-05-19
KR101230812B1 (ko) 2013-02-06
EP1728284A1 (de) 2006-12-06
TWI456626B (zh) 2014-10-11
WO2005104254A1 (en) 2005-11-03
US7488692B2 (en) 2009-02-10
EP1728284B1 (de) 2011-08-24
US20050215000A1 (en) 2005-09-29
JP2007531267A (ja) 2007-11-01
US7202181B2 (en) 2007-04-10
JP4740942B2 (ja) 2011-08-03
CN1950955A (zh) 2007-04-18
CA2560688A1 (en) 2005-11-03
TW200540932A (en) 2005-12-16
US20070173068A1 (en) 2007-07-26
KR20070006794A (ko) 2007-01-11
JP5390548B2 (ja) 2014-01-15

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