TWI454586B - 形成高強度光記錄媒體保護膜用濺鍍靶 - Google Patents

形成高強度光記錄媒體保護膜用濺鍍靶 Download PDF

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TWI454586B
TWI454586B TW100145970A TW100145970A TWI454586B TW I454586 B TWI454586 B TW I454586B TW 100145970 A TW100145970 A TW 100145970A TW 100145970 A TW100145970 A TW 100145970A TW I454586 B TWI454586 B TW I454586B
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Taiwan
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target
recording medium
optical recording
protective film
powder
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TW100145970A
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English (en)
Chinese (zh)
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TW201211285A (en
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Shoubin Zhang
Hayato Sasaki
Syozou Komiyama
Akifumi Mishima
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Mitsubishi Materials Corp
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  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Compositions Of Oxide Ceramics (AREA)
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KR101412404B1 (ko) * 2008-07-07 2014-06-25 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 산화물 소결체, 산화물 소결체로 이루어지는 스퍼터링 타깃, 산화물 소결체의 제조 방법 및 산화물 소결체 스퍼터링 타깃 게이트의 제조 방법
CN101580927B (zh) * 2009-06-26 2012-07-04 西北有色金属研究院 一种锰稳定氧化铪薄膜的制备方法
JP4831258B2 (ja) * 2010-03-18 2011-12-07 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
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JP6149804B2 (ja) * 2014-05-30 2017-06-21 住友金属鉱山株式会社 酸化物焼結体及びその製造方法
CN110352263A (zh) * 2018-02-08 2019-10-18 三菱综合材料株式会社 氧化物溅射靶及氧化物溅射靶的制造方法
JP2020033639A (ja) 2018-08-27 2020-03-05 三菱マテリアル株式会社 酸化物スパッタリングターゲット、及び、酸化物スパッタリングターゲットの製造方法
WO2020044798A1 (ja) * 2018-08-27 2020-03-05 三菱マテリアル株式会社 酸化物スパッタリングターゲット、及び、酸化物スパッタリングターゲットの製造方法
JP7227473B2 (ja) * 2018-09-25 2023-02-22 日亜化学工業株式会社 光学薄膜の製造方法、薄膜形成材料、光学薄膜、及び光学部材
JP2021088730A (ja) 2019-12-02 2021-06-10 三菱マテリアル株式会社 酸化物スパッタリングターゲット、及び、酸化物スパッタリングターゲットの製造方法
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TW201211285A (en) 2012-03-16
WO2007142333A1 (ja) 2007-12-13
TWI494451B (zh) 2015-08-01
KR20090007787A (ko) 2009-01-20
CN101460653B (zh) 2011-11-16
JP2007327103A (ja) 2007-12-20
JP5088464B2 (ja) 2012-12-05
TW201346047A (zh) 2013-11-16
US8268141B2 (en) 2012-09-18
TW200808984A (en) 2008-02-16
KR101074222B1 (ko) 2011-10-14

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