TWI442592B - Thin film solar cell scribing device - Google Patents

Thin film solar cell scribing device Download PDF

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TWI442592B
TWI442592B TW100101911A TW100101911A TWI442592B TW I442592 B TWI442592 B TW I442592B TW 100101911 A TW100101911 A TW 100101911A TW 100101911 A TW100101911 A TW 100101911A TW I442592 B TWI442592 B TW I442592B
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solar cell
tool
cell substrate
groove processing
thin film
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TW201126745A (en
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Masanobu Soyama
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Mitsuboshi Diamond Ind Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0088Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being angularly adjustable
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876Particular processes or apparatus for batch treatment of the devices
    • H01L31/188Apparatus specially adapted for automatic interconnection of solar cells in a module
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00Cutting
    • Y10T83/02Other than completely through work thickness
    • Y10T83/0304Grooving
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00Cutting
    • Y10T83/02Other than completely through work thickness
    • Y10T83/0333Scoring
    • Y10T83/0348Active means to control depth of score

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Description

薄膜太陽電池用刻劃裝置
本發明係關於積體型薄膜太陽電池製造用之刻劃裝置,更詳細地係關於具備保持為了在太陽電池上形成槽之槽加工工具之刻劃頭之刻劃裝置。
薄膜太陽電池中,於基板上將複數單元串聯連接之積體型構造為一般。
針對以往之黃銅礦化合物系積體型薄膜太陽電池之製造方法說明。圖4為顯示一般之CIGS系薄膜太陽電池之製造流程之示意圖。首先,如圖4(a)所示,在由SLG(鹼石灰玻璃)等構成之絕緣基板41上以濺鍍形成成為正側之下部電極之Mo電極層42後,對光吸收層形成前之薄膜太陽電池基板以刻劃加工形成下部電極分離用之槽S。
之後,如圖4(b)所示,於Mo電極層42上以沈澱法、濺鍍法等形成由化合物半導體(CIGS)薄膜構成之光吸收層43,於其上形成由ZnO薄膜構成之絕緣層44。之後,對透明電極層形成前之薄膜太陽電池基板於從下部電極分離用之槽S往於橫方向離開既定距離之位置以刻劃加工形成到達Mo電極層42之電極間接觸用之槽M1。
接著,如圖4(c)所示,從絕緣層44之上形成由ZnO:Al薄膜構成之做為上部電極之透明電極層45,使成為具備於利用光電變換之發電必要之各機能層之太陽電池基板,以刻劃加工形成到達下部之Mo電極層42之電極分離用之槽M2。
上述之製造積體型薄膜太陽電池之流程中,做為將槽M1、M2以刻劃方式進行槽加工之技術之一種,係使用以切刀或如針之工具除去薄膜之一部分之機械式刻劃法。然而,除去薄膜後之槽寬度不固定,可能產生連不必要之部分都除去之問題。
針對此問題,已有為了使能以安定之槽寬度加工之機械式刻劃法被提案(參照專利文獻1)。根據此文獻,係使用具備包含例如板彈簧及加重器之為了調整加工負荷之加工負荷調整機構之槽形成工具及剝離工具。以加工負荷調整機構調整加工負荷,先以槽形成工具形成2條V字狀之槽,接著將2條槽之間之薄膜以剝離工具除去。此外,已有揭示做為另外之方法可以空氣壓等方法調整加工負荷。
專利文獻1:日本特開2002-033498號公報
在將積體型薄膜太陽電池之電極用槽M1、M2以機械式刻劃法進行槽加工之場合,被要求將於刻劃時作用於工具之刃前緣之負荷荷重調整為一定。其原因在於若刃前緣荷重比設定值大則刃前緣之壓入變多,不必要之層亦被削除,且對刃前緣之負荷之增大可能導致薄膜不規則大幅剝落,連不必要之部分都除去,太陽電池之特性及良率降低。此外,其原因亦在於若反之壓力較小則必要之深度之槽便無法加工。然而積體型薄膜太陽電池之槽加工中,僅使刃前緣壓力為一定並不足夠,還被要求在低荷重下之高精度之荷重控制。例如,在上述黃銅礦化合物系薄膜太陽電池中,Mo電極層42上之由化合物半導體(CIGS)薄膜構成之光吸收層43、由ZnO薄膜構成之絕緣層44、由ZnO:Al薄膜構成之透明電極層45係0.05~1μm非常薄。因此,被要求能以0.1~0.5N(牛頓)程度之低荷重控制之刻劃頭。
然而,即使欲使用記載於專利文獻1之具備加工負荷調整機構之剝離工具控制加工負荷之大小,只要不能在0.1~0.5N(牛頓)程度之低荷重之範圍控制作用於刃前緣之荷重,連不必要之層亦被削除之問題便會產生。
亦即,僅以以往之使用板彈簧或加重器之加壓方式或利用氣壓缸之加壓負荷方式在低荷重之微妙之調整非常困難,故做為薄膜太陽電池之槽加工用係誤差大而良率差,且加工再現性差,於耐久性亦有問題。
針對上述問題,本發明之目的係在於以低成本提供不僅將荷重維持為一定,且使在低荷重之微妙之調整為可能,漂亮地切削太陽電池基板之薄膜,可消除不規則之薄膜之剝離之產生以形成直線且漂亮之刻劃線之刻劃裝置。
為了解決上述課題而被完成之本發明之刻劃裝置係一種薄膜太陽電池用刻劃裝置,沿太陽電池基板之刻劃預定線將安裝於刻劃頭之槽加工工具之刃前緣按壓於太陽電池基板之表面,同時使槽加工工具對太陽電池基板相對移動以於形成於太陽電池基板之表面之薄膜形成槽,其特徵在於:由可上下移動地安裝於刻劃頭且保持槽加工工具之工具保持具、將工具保持具往太陽電池基板之表面加壓之氣壓缸、將工具保持具往上方加壓之彈簧構成。
在本發明由於包含槽加工工具之工具保持具之自身重量藉由補償用之彈簧而被支持為無荷重,故對壓力變化之反應性高,且由於使用受電空調整器控制之氣壓缸做為加壓手段,故可以高速進行在低荷重之控制,藉此可將太陽電池基板之薄膜漂亮地切除,可形成沒有不規則之薄膜剝離之直線且漂亮之槽。此外,藉由彈簧與受電空調整器控制之氣壓缸之組合,具有可提供輕量、簡單、低成本之刻劃頭之效果。
可為彈簧之張力係設定為在槽加工工具之刃前緣接觸太陽電池基板之表面之位置,包含槽加工工具之工具保持具之自身重量為無荷重之構成。藉此,於加工時承受之負荷之變動立即傳至氣壓缸,可透過電空調整器進行高速且正確之在低荷重之壓力控制。
以下基於顯示其實施形態之圖面詳細說明本發明之詳細。
圖1係顯示積體型薄膜太陽電池用刻劃裝置之實施形態之立體圖。刻劃裝置具備可於大致水平方向(Y方向)移動,且可在水平面內90度及角度θ旋轉之平台18,平台18實質上形成太陽電池基板W之保持手段。
以夾平台18設置之兩側之支持柱20、20與於X方向延伸之導引棒21構成之橋部19係設為跨平台18上。設有刻劃頭1可沿於導引棒21形成之導引部22移動,且藉由馬達24之旋轉於X方向移動。於刻劃頭1設有保持刻劃加工載置於平台18上之太陽電池基板W之薄膜表面之槽加工工具4之工具保持具5。
此外,於可於X方向及Y方向移動之台座25、26分別設有攝影機27、28。台座25、26係在支持台29上沿延設於X方向之導引部30移動。攝影機27、28可以手動操作上下動,可調整攝影之焦點。被以攝影機27、28拍攝之影像係顯示於螢幕31、32。
於載置於平台18之上之太陽電池基板W有因各步驟而在前步驟被形成之可從表面觀察之刻劃線等存在。因此,在於各步驟中刻劃太陽電池基板W之場合,係利用在前步驟被形成之刻劃線等之刻劃位置做為為了特定之標記。例如,在對於被刻劃之下部電極層(Mo電極層)42之上形成有光吸收層43、絕緣層44之太陽電池基板W形成上下電極接觸用之槽之場合,利用形成於下部電極層42之刻劃線做為為了槽形成位置特定之標記。亦即,藉由以攝影機27、28拍攝形成於下部電極層42之刻劃線,調整太陽電池基板W之位置。具體而言,以攝影機27、28拍攝可從支持於平台18之太陽電池基板W表面觀察之形成於下部電極層42之刻劃線,特定形成於下部電極層42之刻劃線之位置。藉由基於被特定之形成於下部電極層42之刻劃線之位置找出應形成上下電極接觸用之槽之位置(刻劃位置)調整太陽電池基板W之位置來調整刻劃位置。
之後,以每使平台18於Y方向以既定節距移動便使安裝於刻劃頭1之槽加工工具4之刃前緣在藉由後述之細徑之氣壓缸6以設定值之壓力按壓於太陽電池基板W之表面之狀態下於X方向移動,將太陽電池基板W之表面沿X方向刻劃加工。在將太陽電池基板W之表面沿Y方向刻劃加工之場合,使平台18旋轉90度後進行與上述同樣之動作。
其次,針對本發明之刻劃頭1說明。
刻劃頭1係如圖2詳細顯示,具備板狀之基座2、透過軌道3可上下滑動地安裝於此基座2且保持槽加工工具4之工具保持具5、為了加壓槽加工工具4而在前述工具保持具5之上方位置保持於基座2之細徑之氣壓缸6。工具保持具5具備可以安裝螺栓5b為支點旋動之工具安裝體5a,於此工具安裝體5a安裝有槽加工工具4,藉此調整槽加工工具4之安裝角度而使可調整槽加工工具4之刃前緣與太陽電池基板W之角度。此外,前述細徑之氣壓缸6雖其直徑為5mm程度較理想,但只要是2mm~8mm之範圍即可適用。
另外,於工具保持具5與基座2之上部之間設有彈簧7以使包含槽加工工具4之工具保持具5之自身重量補償為大致無荷重之狀態。在此場合,係將彈簧7之張力設定為槽加工工具4之刃前緣在接觸應劃線之太陽電池基板W之表面之位置抵銷。
此外,為了將氣壓缸6之加壓力控制為設定壓而設有電空調整器8。此電空調整器8係如圖3所示,適用調整負壓埠9內之空氣之吸引及供給,控制二次側壓(氣壓缸6之壓力)之一般之構造者。在本實施形態中,於調整器本體10之一方側形成有排氣埠11、連接於泵17之供給埠12,於另一方側設有負壓埠9,此負壓埠9係連接於氣壓缸6。
於調整器本體10設有吸引用電磁閥13、供給用電磁閥14,吸引用電磁閥13係切換負壓埠9內之空氣吸引與停止,供給用電磁閥14係切換對負壓埠9之空氣供給與停止。
於負壓埠9設置有壓力感測器16,檢知負壓埠9內之壓力並將該信號送往控制器15。控制器15係若來自壓力感測器16之信號與已被事先輸入之基準信號之間有壓差便對吸引用電磁閥13、供給用電磁閥14發送信號,開閉閥。
亦即,若負壓埠9之壓力比設定值低,供給用電磁閥14開啟而來自泵17之空氣從負壓埠9被供給至氣壓缸6,在負壓埠9內之壓力成為設定值後供給用電磁閥14關閉而空氣之供給被停止。此外,若負壓埠9之壓力比設定值高,吸引用電磁閥13開啟而空氣從排氣埠11被排出,在負壓埠9內之壓力成為設定值後吸引用電磁閥13關閉而空氣之排出停止。
如此,負壓埠9內之壓力始終被維持為設定值。
上述之構成中,在於太陽電池基板W加工電極用之槽之場合,如前述,使刻劃頭1之槽加工工具4之刃前緣在藉由氣壓缸6以設定值之壓力按壓於太陽電池基板W之表面之狀態下移動來進行。於加工中,若細徑之氣壓缸6之按壓力變動,被電空調整器8控制為設定值。在此場合,由於被支持為包含槽加工工具4之工具保持具5之自身重量因彈簧7而在刃前緣接觸太陽電池基板W之表面之位置成為無荷重,故對壓力變化之反應性高,藉此,在0.1~0.5N之史無前例之低荷重之控制可容易進行。另外,由於使用細徑之氣壓缸6,故對壓力變化之反應性變高,可進一步提高在低荷重之微妙之控制性。
在上述實施例雖係以使刻劃頭1於X方向移動以實行刻劃加工,但由於只要刻劃頭1與太陽電池基板W可相對移動即可,故可不使刻劃頭1移動而僅使太陽電池基板W於X方向及Y方向移動。
以上,雖已針對本發明之代表性實施例說明,但本發明並非必須僅特定於上述之實施例構造者。例如,在實施例雖係將彈簧7之張力設定為在槽加工工具4之刃前緣接觸太陽電池基板W之表面之位置包含槽加工工具4之工具保持具5之自身重量成為無荷重,但自身重量成為無荷重之位置並不特別受限。此外,在本發明中,在達成其目的且不超出申請專利範圍之範圍內可適當修正、變更。
[產業上之可利用性]
本發明可適用於使用黃銅礦化合物系半導體膜等之積體型薄膜太陽電池之製造方法及可於該方法使用之槽加工工具。
W...太陽電池基板
1...刻劃頭
4...槽加工工具
5...工具保持具
6...氣壓缸
7...彈簧
8...電空調整器
圖1為顯示使用本發明之刻劃頭之積體型薄膜太陽電池用刻劃裝置之一實施形態之立體圖。
圖2為刻劃頭之立體圖。
圖3為刻劃頭中之氣壓缸及控制該氣壓缸之電空調整器之說明圖。
圖4為顯示一般之CIGS系薄膜太陽電池之製造流程之示意圖。
1...刻劃頭
4...槽加工工具
5...工具保持具
5a...工具安裝體
5b...安裝螺栓
6...氣壓缸
7...彈簧

Claims (2)

  1. 一種薄膜太陽電池用刻劃裝置,沿太陽電池基板之刻劃預定線將安裝於刻劃頭之槽加工工具之刃前緣按壓於太陽電池基板表面,同時使槽加工工具對太陽電池基板相對移動以於形成於太陽電池基板之表面之薄膜形成槽,其特徵在於:由可上下移動地安裝於刻劃頭且保持槽加工工具之工具保持具、將工具保持具往太陽電池基板表面加壓之氣壓缸、將工具保持具往上方加壓之彈簧構成,工具保持具具備可旋動的工具安裝體,於此工具安裝體安裝有槽加工工具,調整槽加工工具的安裝角度。
  2. 如申請專利範圍第1項記載之薄膜太陽電池用刻劃裝置,其中,彈簧之張力係設定為在槽加工工具之刃前緣接觸太陽電池基板表面之位置,包含槽加工工具之工具保持具自身重量為無荷重。
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