CN102142485A - 薄膜太阳电池用刻划装置 - Google Patents
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Abstract
提供使在低荷重的微妙的调整为可能,漂亮地切削太阳电池基板的薄膜,可消除不规则的薄膜的剥离的产生以形成直线且漂亮的刻划线的刻划装置。沿积体型太阳电池基板W的刻划预定线将安装于刻划头(1)的槽加工工具(4)的刃前缘按压于太阳电池基板W的表面,同时使槽加工工具(4)对太阳电池基板W相对移动以于形成于太阳电池基板W的表面的薄膜形成槽的刻划装置,其特征在于:由可上下移动地安装于刻划头(1)且保持槽加工工具(4)的工具保持具(5)、将工具保持具(5)往太阳电池基板W的表面加压的气压缸(6)、将工具保持具(5)往上方加压的弹簧(7)构成。
Description
技术领域
本发明是关于积体型薄膜太阳电池制造用的刻划装置,更详细地是关于具备保持为了在太阳电池上形成槽的槽加工工具的刻划头的刻划装置。
背景技术
薄膜太阳电池中,于基板上将多个单元串联连接的积体型构造为一般。
针对以往的黄铜矿化合物系积体型薄膜太阳电池的制造方法说明。图4为显示一般的CIGS系薄膜太阳电池的制造流程的示意图。首先,如图4(a)所示,在由SLG(碱石灰玻璃)等构成的绝缘基板41上以溅镀形成成为正侧的下部电极的Mo电极层42后,对光吸收层形成前的薄膜太阳电池基板以刻划加工形成下部电极分离用的槽S。
之后,如图4(b)所示,于Mo电极层42上以沉淀法、溅镀法等形成由化合物半导体(CIGS)薄膜构成的光吸收层43,于其上形成由ZnO薄膜构成的绝缘层44。之后,对透明电极层形成前的薄膜太阳电池基板于从下部电极分离用的槽S往于横方向离开既定距离的位置以刻划加工形成到达Mo电极层42的电极间接触用的槽M1。
接着,如图4(c)所示,从绝缘层44上形成由ZnO:Al薄膜构成的做为上部电极的透明电极层45,使成为具备于利用光电变换的发电必要的各机能层的太阳电池基板,以刻划加工形成到达下部的Mo电极层42的电极分离用的槽M2。
上述的制造积体型薄膜太阳电池的流程中,做为将槽M1、M2以刻划方式进行槽加工的技术的一种,是使用以切刀或如针的工具除去薄膜的一部分的机械式刻划法。然而,除去薄膜后的槽宽度不固定,可能产生连不必要的部分都除去的问题。
针对此问题,已有为了使能以安定的槽宽度加工的机械式刻划法被提案(参照专利文献1)。根据此文献,是使用具备包含例如板弹簧及加重器的为了调整加工负荷的加工负荷调整机构的槽形成工具及剥离工具。以加工负荷调整机构调整加工负荷,先以槽形成工具形成2条V字状的槽,接着将2条槽之间的薄膜以剥离工具除去。此外,已有揭示做为另外的方法可以空气压等方法调整加工负荷。
专利文献1:日本特开2002-033498号公报
发明内容
发明欲解决的课题
在将积体型薄膜太阳电池的电极用槽M1、M2以机械式刻划法进行槽加工的场合,被要求将于刻划时作用于工具的刃前缘的负荷荷重调整为一定。其原因在于若刃前缘荷重比设定值大则刃前缘的压入变多,不必要的层亦被削除,且对刃前缘的负荷的増大可能导致薄膜不规则大幅剥落,连不必要的部分都除去,太阳电池的特性及良率降低。此外,其原因亦在于若反之压力较小则必要的深度的槽便无法加工。然而积体型薄膜太阳电池的槽加工中,仅使刃前缘压力为一定并不足够,还被要求在低荷重下的高精度的荷重控制。例如,在上述黄铜矿化合物系薄膜太阳电池中,Mo电极层42上的由化合物半导体(CIGS)薄膜构成的光吸收层43、由ZnO薄膜构成的绝缘层44、由ZnO:Al薄膜构成的透明电极层45是0.05-1μm非常薄。因此,被要求能以0.1-0.5N(牛顿)程度的低荷重控制的刻划头。
然而,即使欲使用记载于专利文献1的具备加工负荷调整机构的剥离工具控制加工负荷的大小,只要不能在0.1-0.5N(牛顿)程度的低荷重的范围控制作用于刃前缘的荷重,连不必要的层亦被削除的问题便会产生。
亦即,仅以以往的使用板弹簧或加重器的加压方式或利用气压缸的加压负荷方式在低荷重的微妙的调整非常困难,故做为薄膜太阳电池的槽加工用是误差大而良率差,且加工再现性差,于耐久性亦有问题。
针对上述问题,本发明的目的是在于以低成本提供不仅将荷重维持为一定,且使在低荷重的微妙的调整为可能,漂亮地切削太阳电池基板的薄膜,可消除不规则的薄膜的剥离的产生以形成直线且漂亮的刻划线的刻划装置。
解决课题的技术手段
为了解决上述课题而被完成的本发明的刻划装置是一种薄膜太阳电池用刻划装置,沿太阳电池基板的刻划预定线将安装于刻划头的槽加工工具的刃前缘按压于太阳电池基板的表面,同时使槽加工工具对太阳电池基板相对移动以于形成于太阳电池基板的表面的薄膜形成槽,其特征在于:由可上下移动地安装于刻划头且保持槽加工工具的工具保持具、将工具保持具往太阳电池基板的表面加压的气压缸、将工具保持具往上方加压的弹簧构成。
发明的效果
在本发明由于包含槽加工工具的工具保持具的自身重量藉由补偿用的弹簧而被支持为无荷重,故对压力变化的反应性高,且由于使用受电空调整器控制的气压缸做为加压手段,故可以高速进行在低荷重的控制,由此可将太阳电池基板的薄膜漂亮地切除,可形成没有不规则的薄膜剥离的直线且漂亮的槽。此外,由弹簧与受电空调整器控制的气压缸的组合,具有可提供轻量、简单、低成本的刻划头的效果。
可为弹簧的张力是设定为在槽加工工具的刃前缘接触太阳电池基板的表面的位置,包含槽加工工具的工具保持具的自身重量为无荷重的构成。由此,于加工时承受的负荷的变动立即传至气压缸,可通过电空调整器进行高速且正确的在低荷重的压力控制。
附图说明
以下结合附图及实施例详细说明本发明的内容,其中:
图1为显示使用本发明的刻划头的积体型薄膜太阳电池用刻划装置的一实施形态的立体图。
图2为刻划头的立体图。
图3为刻划头中的气压缸及控制该气压缸的电空调整器的说明图。
图4为显示一般的CIGS系薄膜太阳电池的制造流程的示意图。
具体实施方式。
图1是显示积体型薄膜太阳电池用刻划装置的实施形态的立体图。刻划装置具备可于大致水平方向(Y方向)移动,且可在水平面内90度及角度θ旋转的平台18,平台18实质上形成太阳电池基板W的保持手段。
以夹平台18设置的两侧的支持柱20、20与于X方向延伸的导引棒21构成的桥部19是设为跨平台18上。设有刻划头1可沿于导引棒21形成的导引部22移动,且由马达24的旋转于X方向移动。于刻划头1设有保持刻划加工载置于平台18上的太阳电池基板W的薄膜表面的槽加工工具4的工具保持具5。
此外,于可于X方向及Y方向移动的台座25、26分别设有摄影机27、28。台座25、26是在支持台29上沿延设于X方向的导引部30移动。摄影机27、28可以手动操作上下动,可调整摄影的焦点。被以摄影机27、28拍摄的影像是显示于屏幕31、32。
于载置于平台18之上的太阳电池基板W有因各步骤而在前步骤被形成的可从表面观察的刻划线等存在。因此,在于各步骤中刻划太阳电池基板W的场合,是利用在前步骤被形成的刻划线等的刻划位置做为为了特定的标记。例如,在对于被刻划的下部电极层(Mo电极层)42之上形成有光吸收层43、绝缘层44的太阳电池基板W形成上下电极接触用的槽的场合,利用形成于下部电极层42的刻划线做为为了槽形成位置特定的标记。亦即,藉由以摄影机27、28拍摄形成于下部电极层42的刻划线,调整太阳电池基板W的位置。具体而言,以摄影机27、28拍摄可从支持于平台18的太阳电池基板W表面观察的形成于下部电极层42的刻划线,特定形成于下部电极层42的刻划线的位置。藉由基于被特定的形成于下部电极层42的刻划线的位置找出应形成上下电极接触用的槽的位置(刻划位置)调整太阳电池基板W的位置来调整刻划位置。
之后,以每使平台18于Y方向以既定节距移动便使安装于刻划头1的槽加工工具4的刃前缘在藉由后述的细径的气压缸6以设定值的压力按压于太阳电池基板W的表面的状态下于X方向移动,将太阳电池基板W的表面沿X方向刻划加工。在将太阳电池基板W的表面沿Y方向刻划加工的场合,使平台18旋转90度后进行与上述同样的动作。
其次,针对本发明的刻划头1说明。
刻划头1是如图2详细显示,具备板状的基座2、通过轨道3可上下滑动地安装于此基座2且保持槽加工工具4的工具保持具5、为了加压槽加工工具4而在前述工具保持具5的上方位置保持于基座2的细径的气压缸6。工具保持具5具备可以安装螺栓5b为支点旋动的工具安装体5a,于此工具安装体5a安装有槽加工工具4,由此调整槽加工工具4的安装角度而使可调整槽加工工具4的刃前缘与太阳电池基板W的角度。此外,前述细径的气压缸6虽其直径为5mm程度较理想,但只要是2mm-8mm的范围即可适用。
另外,于工具保持具5与基座2的上部之间设有弹簧7以使包含槽加工工具4的工具保持具5的自身重量补偿为大致无荷重的状态。在此场合,是将弹簧7的张力设定为槽加工工具4的刃前缘在接触应划线的太阳电池基板W的表面的位置抵销。
此外,为了将气压缸6的加压力控制为设定压而设有电空调整器8。此电空调整器8是如图3所示,适用调整负压端口9内的空气的吸引及供给,控制二次侧压(气压缸6的压力)的一般的构造。在本实施形态中,于调整器本体10的一方侧形成有排气端口11、连接于泵17的供给端口12,于另一方侧设有负压端口9,此负压端口9是连接于气压缸6。
于调整器本体10设有吸引用电磁阀13、供给用电磁阀14,吸引用电磁阀13是切换负压端口9内的空气吸引与停止,供给用电磁阀14是切换对负压端口9的空气供给与停止。
于负压端口9设置有压力传感器16,检知负压端口9内的压力并将该信号送往控制器15。控制器15是若来自压力传感器16的信号与已被事先输入的基准信号之间有压差便对吸引用电磁阀13、供给用电磁阀14发送信号,开闭阀。
亦即,若负压端口9的压力比设定值低,供给用电磁阀14开启而来自泵17的空气从负压端口9被供给至气压缸6,在负压端口9内的压力成为设定值后供给用电磁阀14关闭而空气的供给被停止。此外,若负压端口9的压力比设定值高,吸引用电磁阀13开启而空气从排气端口11被排出,在负压端口9内的压力成为设定值后吸引用电磁阀13关闭而空气的排出停止。
如此,负压端口9内的压力始终被维持为设定值。
上述的构成中,在于太阳电池基板W加工电极用的槽的场合,如前述,使刻划头1的槽加工工具4的刃前缘在藉由气压缸6以设定值的压力按压于太阳电池基板W的表面的状态下移动来进行。于加工中,若细径的气压缸6的按压力变动,被电空调整器8控制为设定值。在此场合,由于被支持为包含槽加工工具4的工具保持具5的自身重量因弹簧7而在刃前缘接触太阳电池基板W的表面的位置成为无荷重,故对压力变化的反应性高,由此,在0.1-0.5N的史无前例的低荷重的控制可容易进行。另外,由于使用细径的气压缸6,故对压力变化的反应性变高,可进一步提高在低荷重的微妙的控制性。
在上述实施例虽是以使刻划头1于X方向移动以实行刻划加工,但由于只要刻划头1与太阳电池基板W可相对移动即可,故可不使刻划头1移动而仅使太阳电池基板W于X方向及Y方向移动。
以上,虽已针对本发明的代表性实施例说明,但本发明并非必须仅特定于上述的实施例构造。例如,在实施例虽是将弹簧7的张力设定为在槽加工工具4的刃前缘接触太阳电池基板W的表面的位置包含槽加工工具4的工具保持具5的自身重量成为无荷重,但自身重量成为无荷重的位置并不特别受限。此外,在本发明中,在达成其目的且不超出申请专利范围的范围内可适当修正、变更。
产业上的可利用性
本发明可适用于使用黄铜矿化合物系半导体膜等的积体型薄膜太阳电池的制造方法及可于该方法使用的槽加工工具。
Claims (2)
1.一种薄膜太阳电池用刻划装置,沿太阳电池基板的刻划预定线将安装于刻划头的槽加工工具的刃前缘按压于太阳电池基板表面,同时使槽加工工具对太阳电池基板相对移动以于形成于太阳电池基板的表面的薄膜形成槽,其特征在于:由可上下移动地安装于刻划头且保持槽加工工具的工具保持具、将工具保持具往太阳电池基板表面加压的气压缸、将工具保持具往上方加压的弹簧构成。
2.如权利要求1所述的记载的薄膜太阳电池用刻划装置,其中,弹簧的张力设定为在槽加工工具的刃前缘接触太阳电池基板表面的位置,包含槽加工工具的工具保持具自身重量为无荷重。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103515219A (zh) * | 2012-06-26 | 2014-01-15 | 三星钻石工业股份有限公司 | 基板的加工装置 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006196211A (ja) * | 2005-01-11 | 2006-07-27 | Nec Saitama Ltd | 基板コネクタ装置および治具 |
US7165332B2 (en) * | 2004-08-24 | 2007-01-23 | Mcgrail Peter | Method and apparatus for positioning a billiard game rack |
TW200900365A (en) * | 2007-03-30 | 2009-01-01 | Thk Co Ltd | Scribing apparatus and scribing method |
WO2009057474A1 (ja) * | 2007-10-31 | 2009-05-07 | Central Glass Co., Ltd. | ガラス板への切筋線付与装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3680213A (en) * | 1969-02-03 | 1972-08-01 | Karl O Reichert | Method of grooving semiconductor wafer for the dividing thereof |
DE3002071A1 (de) * | 1980-01-21 | 1981-07-23 | Vereinigte Glaswerke Gmbh, 5100 Aachen | Schneidkopf fuer glasschneidemaschinen |
JPH09295822A (ja) * | 1996-05-07 | 1997-11-18 | Hitachi Ltd | ガラス切断装置 |
JP2000315809A (ja) * | 1999-03-04 | 2000-11-14 | Matsushita Electric Ind Co Ltd | 集積型薄膜太陽電池の製造方法およびパターニング装置 |
JP2002033498A (ja) * | 2000-07-17 | 2002-01-31 | Matsushita Electric Ind Co Ltd | 集積型薄膜太陽電池の製造方法およびパターニング装置 |
JP4705713B2 (ja) * | 2000-09-08 | 2011-06-22 | 中村留精密工業株式会社 | 硬質脆性板のスクライブ装置 |
JP4008692B2 (ja) * | 2001-11-02 | 2007-11-14 | Thk株式会社 | スクライブ装置 |
US7165331B1 (en) * | 2005-05-24 | 2007-01-23 | Micro Processing Technology, Inc. | Apparatus and method for scribing a semiconductor wafer while controlling scribing forces |
TW200906746A (en) * | 2007-08-10 | 2009-02-16 | Mitsuboshi Diamond Ind Co Ltd | Scribing head, scribing device, and scribing method |
US7707732B2 (en) * | 2007-10-16 | 2010-05-04 | Solyndra, Inc. | Constant force mechanical scribers and methods for using same in semiconductor processing applications |
JP5121055B2 (ja) * | 2008-02-21 | 2013-01-16 | AvanStrate株式会社 | スクライブ装置 |
US20110126688A1 (en) * | 2008-05-26 | 2011-06-02 | Masanobu Soyama | Scribing apparatus for thin film solar cell |
-
2010
- 2010-01-27 JP JP2010015958A patent/JP2011155151A/ja active Pending
-
2011
- 2011-01-07 KR KR1020110001726A patent/KR101251896B1/ko active IP Right Grant
- 2011-01-19 TW TW100101911A patent/TWI442592B/zh not_active IP Right Cessation
- 2011-01-20 EP EP11151535.9A patent/EP2352163B1/en not_active Not-in-force
- 2011-01-27 US US13/015,019 patent/US20110179934A1/en not_active Abandoned
- 2011-01-27 CN CN201110032574.3A patent/CN102142485B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7165332B2 (en) * | 2004-08-24 | 2007-01-23 | Mcgrail Peter | Method and apparatus for positioning a billiard game rack |
JP2006196211A (ja) * | 2005-01-11 | 2006-07-27 | Nec Saitama Ltd | 基板コネクタ装置および治具 |
TW200900365A (en) * | 2007-03-30 | 2009-01-01 | Thk Co Ltd | Scribing apparatus and scribing method |
WO2009057474A1 (ja) * | 2007-10-31 | 2009-05-07 | Central Glass Co., Ltd. | ガラス板への切筋線付与装置 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103515219A (zh) * | 2012-06-26 | 2014-01-15 | 三星钻石工业股份有限公司 | 基板的加工装置 |
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CN105322053B (zh) * | 2014-05-29 | 2017-11-14 | 三星钻石工业股份有限公司 | 工具保持器及槽加工装置 |
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CN105196423B (zh) * | 2014-06-19 | 2019-01-08 | 三星钻石工业股份有限公司 | 脆性材料衬底的刻划方法及装置 |
CN106346539A (zh) * | 2016-08-20 | 2017-01-25 | 温州巨纳鞋业有限公司 | 一种制鞋用鞋底沟槽高效加工装置 |
CN107877716A (zh) * | 2016-09-29 | 2018-04-06 | 三星钻石工业股份有限公司 | 金刚石刀具及其划线方法 |
CN112638608A (zh) * | 2018-09-28 | 2021-04-09 | 三星钻石工业股份有限公司 | 刻划头及刻划装置 |
CN114619580A (zh) * | 2022-05-11 | 2022-06-14 | 河北圣昊光电科技有限公司 | 一种克重调节结构、刀具调节组件及具有其的裂片机 |
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US20110179934A1 (en) | 2011-07-28 |
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