TWI439803B - 遮罩基底之製造方法以及光罩之製造方法 - Google Patents
遮罩基底之製造方法以及光罩之製造方法 Download PDFInfo
- Publication number
- TWI439803B TWI439803B TW097121869A TW97121869A TWI439803B TW I439803 B TWI439803 B TW I439803B TW 097121869 A TW097121869 A TW 097121869A TW 97121869 A TW97121869 A TW 97121869A TW I439803 B TWI439803 B TW I439803B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- substrate
- film
- coating
- resist
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 55
- 239000007788 liquid Substances 0.000 claims description 387
- 239000000758 substrate Substances 0.000 claims description 266
- 239000011248 coating agent Substances 0.000 claims description 226
- 238000000576 coating method Methods 0.000 claims description 226
- 230000002093 peripheral effect Effects 0.000 claims description 48
- 238000000926 separation method Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 238000007599 discharging Methods 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 5
- 239000005871 repellent Substances 0.000 claims description 5
- 238000013459 approach Methods 0.000 claims description 2
- 239000003153 chemical reaction reagent Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 165
- 239000011521 glass Substances 0.000 description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 10
- 229910052707 ruthenium Inorganic materials 0.000 description 10
- 230000003196 chaotropic effect Effects 0.000 description 9
- 238000005187 foaming Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000003032 molecular docking Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007155937A JP5073375B2 (ja) | 2007-06-13 | 2007-06-13 | マスクブランクの製造方法及びフォトマスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200912518A TW200912518A (en) | 2009-03-16 |
| TWI439803B true TWI439803B (zh) | 2014-06-01 |
Family
ID=40238700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097121869A TWI439803B (zh) | 2007-06-13 | 2008-06-12 | 遮罩基底之製造方法以及光罩之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5073375B2 (enExample) |
| KR (1) | KR101487550B1 (enExample) |
| CN (1) | CN101419398B (enExample) |
| MY (1) | MY150117A (enExample) |
| TW (1) | TWI439803B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5086714B2 (ja) * | 2007-07-13 | 2012-11-28 | Ｈｏｙａ株式会社 | マスクブランクの製造方法及びフォトマスクの製造方法 |
| JP2011013321A (ja) * | 2009-06-30 | 2011-01-20 | Hoya Corp | フォトマスクブランクの製造方法、フォトマスクの製造方法及び塗布装置 |
| JP6659422B2 (ja) * | 2016-03-29 | 2020-03-04 | アルバック成膜株式会社 | 塗布装置、マスクブランクの製造方法 |
| CN114082602A (zh) * | 2021-11-30 | 2022-02-25 | Tcl华星光电技术有限公司 | 涂胶机构以及涂胶装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4445985A1 (de) * | 1994-12-22 | 1996-06-27 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zur Belackung oder Beschichtung eines Substrats |
| JP2000343015A (ja) * | 1999-06-08 | 2000-12-12 | Dainippon Screen Mfg Co Ltd | 塗布装置 |
| JP3252325B2 (ja) * | 1999-10-29 | 2002-02-04 | 株式会社ヒラノテクシード | 塗工方法及び塗工装置 |
| JP3808741B2 (ja) * | 2001-10-01 | 2006-08-16 | 東京エレクトロン株式会社 | 処理装置 |
| JP2005051220A (ja) * | 2003-07-17 | 2005-02-24 | Hoya Corp | レジスト膜付基板の製造方法 |
| KR20070017228A (ko) * | 2003-07-17 | 2007-02-08 | 호야 가부시키가이샤 | 레지스트막 부착 기판의 제조방법 |
| JP2005246274A (ja) * | 2004-03-05 | 2005-09-15 | Nidek Co Ltd | 塗工方法及び塗工装置 |
| JP4169719B2 (ja) * | 2004-03-30 | 2008-10-22 | Ｈｏｙａ株式会社 | レジスト膜付基板の製造方法 |
| JP4410063B2 (ja) * | 2004-09-06 | 2010-02-03 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP4673157B2 (ja) * | 2004-10-01 | 2011-04-20 | 株式会社ヒラノテクシード | 塗工装置 |
| JP2006269599A (ja) * | 2005-03-23 | 2006-10-05 | Sony Corp | パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法 |
-
2007
- 2007-06-13 JP JP2007155937A patent/JP5073375B2/ja active Active
-
2008
- 2008-06-12 CN CN2008101778611A patent/CN101419398B/zh active Active
- 2008-06-12 KR KR20080054946A patent/KR101487550B1/ko active Active
- 2008-06-12 TW TW097121869A patent/TWI439803B/zh active
- 2008-06-12 MY MYPI20082068A patent/MY150117A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP5073375B2 (ja) | 2012-11-14 |
| CN101419398B (zh) | 2012-06-20 |
| CN101419398A (zh) | 2009-04-29 |
| TW200912518A (en) | 2009-03-16 |
| JP2008311327A (ja) | 2008-12-25 |
| KR20080109650A (ko) | 2008-12-17 |
| KR101487550B1 (ko) | 2015-02-26 |
| MY150117A (en) | 2013-11-29 |
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