TWI437117B - 用於應力的ＳｉＮ膜的胺基乙烯基矽烷前驅物 - Google Patents

用於應力的ＳｉＮ膜的胺基乙烯基矽烷前驅物 Download PDF

Info

Publication number
TWI437117B
TWI437117B TW100140431A TW100140431A TWI437117B TW I437117 B TWI437117 B TW I437117B TW 100140431 A TW100140431 A TW 100140431A TW 100140431 A TW100140431 A TW 100140431A TW I437117 B TWI437117 B TW I437117B
Authority
TW
Taiwan
Prior art keywords
bis
decane
group
stress
vinyl
Prior art date
Application number
TW100140431A
Other languages
English (en)
Chinese (zh)
Other versions
TW201211303A (en
Inventor
凡士爾 弗沙
安德魯 大衛 強生
蕭滿超
Original Assignee
氣體產品及化學品股份公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 氣體產品及化學品股份公司 filed Critical 氣體產品及化學品股份公司
Publication of TW201211303A publication Critical patent/TW201211303A/zh
Application granted granted Critical
Publication of TWI437117B publication Critical patent/TWI437117B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW100140431A 2008-11-12 2009-11-09 用於應力的ＳｉＮ膜的胺基乙烯基矽烷前驅物 TWI437117B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11362408P 2008-11-12 2008-11-12
US12/609,542 US8580993B2 (en) 2008-11-12 2009-10-30 Amino vinylsilane precursors for stressed SiN films

Publications (2)

Publication Number Publication Date
TW201211303A TW201211303A (en) 2012-03-16
TWI437117B true TWI437117B (zh) 2014-05-11

Family

ID=41509788

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100140431A TWI437117B (zh) 2008-11-12 2009-11-09 用於應力的ＳｉＮ膜的胺基乙烯基矽烷前驅物
TW098137987A TWI412622B (zh) 2008-11-12 2009-11-09 用於應力的ＳｉＮ膜的胺基乙烯基矽烷前驅物

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW098137987A TWI412622B (zh) 2008-11-12 2009-11-09 用於應力的ＳｉＮ膜的胺基乙烯基矽烷前驅物

Country Status (6)

Country Link
US (2) US8580993B2 (enExample)
EP (2) EP2465861A1 (enExample)
JP (2) JP5175261B2 (enExample)
KR (2) KR101396139B1 (enExample)
CN (2) CN101899651B (enExample)
TW (2) TWI437117B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8580993B2 (en) 2008-11-12 2013-11-12 Air Products And Chemicals, Inc. Amino vinylsilane precursors for stressed SiN films
US8889235B2 (en) * 2009-05-13 2014-11-18 Air Products And Chemicals, Inc. Dielectric barrier deposition using nitrogen containing precursor
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8460753B2 (en) * 2010-12-09 2013-06-11 Air Products And Chemicals, Inc. Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes
US8647993B2 (en) * 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
EP2714960B1 (en) 2011-06-03 2018-02-28 Versum Materials US, LLC Compositions and processes for depositing carbon-doped silicon-containing films
SG2013083654A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Methods for depositing films on sensitive substrates
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
KR20170019668A (ko) * 2015-08-12 2017-02-22 (주)디엔에프 플라즈마 원자층 증착법을 이용한 실리콘 질화 박막의 제조방법
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
WO2018016871A1 (ko) * 2016-07-22 2018-01-25 (주)디엔에프 플라즈마 원자층 증착법을 이용한 실리콘 질화 박막의 제조방법
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
SG11202111962QA (en) 2019-05-01 2021-11-29 Lam Res Corp Modulated atomic layer deposition
JP2022534793A (ja) 2019-06-07 2022-08-03 ラム リサーチ コーポレーション 原子層堆積時における膜特性の原位置制御
KR102727074B1 (ko) * 2020-03-19 2024-11-06 삼성디스플레이 주식회사 표시 장치
CN116113725B (zh) 2020-07-24 2025-10-31 弗萨姆材料美国有限责任公司 用于锗种子层的组合物及其使用方法
WO2023102376A1 (en) * 2021-12-01 2023-06-08 Lam Research Corporation Deposition of high compressive stress thermally stable nitride film
CN114447435A (zh) * 2022-01-21 2022-05-06 恒实科技发展(南京)有限公司 用于锂二次电池的非水电解液及其制备方法和应用

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2854787B2 (ja) * 1993-08-31 1999-02-03 信越化学工業株式会社 シリコーンゴム組成物の製造方法
JP3430097B2 (ja) 1999-12-22 2003-07-28 日本電気株式会社 薄膜トランジスタアレイ基板の製造方法
JP2002246381A (ja) * 2001-02-15 2002-08-30 Anelva Corp Ｃｖｄ方法
JP2004223769A (ja) * 2003-01-20 2004-08-12 Dainippon Printing Co Ltd 透明積層フィルム、反射防止フィルム及びそれを用いた偏光板、液晶表示装置
US7122222B2 (en) * 2003-01-23 2006-10-17 Air Products And Chemicals, Inc. Precursors for depositing silicon containing films and processes thereof
US7579496B2 (en) * 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
JP2005310861A (ja) 2004-04-19 2005-11-04 Mitsui Chemicals Inc 炭化窒化珪素膜の形成方法
US7129187B2 (en) * 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
US20060045986A1 (en) * 2004-08-30 2006-03-02 Hochberg Arthur K Silicon nitride from aminosilane using PECVD
JP2006120992A (ja) 2004-10-25 2006-05-11 C Bui Res:Kk シリコン窒化膜の製造方法及びその製造装置
US20060182885A1 (en) * 2005-02-14 2006-08-17 Xinjian Lei Preparation of metal silicon nitride films via cyclic deposition
JP2006294485A (ja) 2005-04-13 2006-10-26 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子、その製造方法及び表示装置
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
US7732342B2 (en) * 2005-05-26 2010-06-08 Applied Materials, Inc. Method to increase the compressive stress of PECVD silicon nitride films
EP1908767B1 (en) * 2005-05-31 2012-06-13 Toho Titanium Co., Ltd. Aminosilane compounds, catalyst components and catalysts for olefin polymerization, and process for production of olefin polymers with the same
JP2007092166A (ja) * 2005-09-02 2007-04-12 Japan Advanced Institute Of Science & Technology Hokuriku 薄膜堆積装置、薄膜堆積方法及び化合物薄膜
US20080142046A1 (en) 2006-12-13 2008-06-19 Andrew David Johnson Thermal F2 etch process for cleaning CVD chambers
US7790635B2 (en) * 2006-12-14 2010-09-07 Applied Materials, Inc. Method to increase the compressive stress of PECVD dielectric films
EP2123445A4 (en) 2007-02-05 2012-04-11 Konica Minolta Holdings Inc TRANSPARENT FILM THAT IS WATERPROOFABLE AND METHOD FOR PRODUCING THE SAME
JP5391557B2 (ja) * 2007-02-28 2014-01-15 住友化学株式会社 共役ジエン系重合体、共役ジエン系重合体の製造方法及び共役ジエン系重合体組成物
US8580993B2 (en) * 2008-11-12 2013-11-12 Air Products And Chemicals, Inc. Amino vinylsilane precursors for stressed SiN films

Also Published As

Publication number Publication date
JP2010118664A (ja) 2010-05-27
US20100120262A1 (en) 2010-05-13
KR20100053471A (ko) 2010-05-20
TW201211303A (en) 2012-03-16
CN101899651B (zh) 2012-12-26
JP5175261B2 (ja) 2013-04-03
TWI412622B (zh) 2013-10-21
EP2192207B1 (en) 2012-06-20
KR20130016171A (ko) 2013-02-14
US20140065844A1 (en) 2014-03-06
KR101553863B1 (ko) 2015-09-17
TW201018741A (en) 2010-05-16
JP5508496B2 (ja) 2014-05-28
EP2192207A1 (en) 2010-06-02
US8580993B2 (en) 2013-11-12
EP2465861A1 (en) 2012-06-20
CN101899651A (zh) 2010-12-01
CN102491990A (zh) 2012-06-13
CN102491990B (zh) 2015-12-09
KR101396139B1 (ko) 2014-05-19
JP2013016859A (ja) 2013-01-24

Similar Documents

Publication Publication Date Title
TWI437117B (zh) 用於應力的ＳｉＮ膜的胺基乙烯基矽烷前驅物
CN105185707B (zh) 硬掩模材料、其形成方法和设备及其用途
US7601860B2 (en) Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
JP5006428B2 (ja) 窒素含有前駆物質を用いる誘電体バリアの堆積
CN101205607A (zh) 增加等离子体增强化学气相沉积电介质薄膜压应力的方法
KR100546958B1 (ko) 반도체 장치 및 그 제조 방법
JP4881153B2 (ja) 水素化シリコンオキシカーバイド膜の生成方法。
US20180371612A1 (en) Low Temperature Process for Forming Silicon-Containing Thin Layer
EP2302667A1 (en) Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device
EP2123658A1 (en) Material for forming silicon-containing film, and silicon-containing insulating film and method for forming the same
US20260107711A1 (en) Precursors for depositing films with elastic modulus
KR101934773B1 (ko) 저온에서의 실리콘-함유 박막 형성방법
CN112760615A (zh) 一种二氧化硅薄膜及其低温制备方法
TW202111153A (zh) 單烷氧基矽烷及二烷氧基矽烷和使用其製造的密有機二氧化矽膜
EP3887566A1 (en) 1-methyl-1-iso-propoxy-silacycloalkanes and dense organosilica films made therefrom
TW202110862A (zh) 單烷氧基矽烷及使用其製造的密有機二氧化矽膜
JP5731841B2 (ja) シリコン窒化膜の形成方法
CN117737691A (zh) 二氧化硅厚层的沉积

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees