TWI430051B - 用於１９３奈米微影術之雙層光敏顯影劑可溶抗反射底塗層 - Google Patents
用於１９３奈米微影術之雙層光敏顯影劑可溶抗反射底塗層 Download PDFInfo
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- TWI430051B TWI430051B TW98105594A TW98105594A TWI430051B TW I430051 B TWI430051 B TW I430051B TW 98105594 A TW98105594 A TW 98105594A TW 98105594 A TW98105594 A TW 98105594A TW I430051 B TWI430051 B TW I430051B
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- reflective coating
- reflective
- coating
- polymer
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3083008P | 2008-02-22 | 2008-02-22 | |
| US12/389,135 US9638999B2 (en) | 2008-02-22 | 2009-02-19 | Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200949460A TW200949460A (en) | 2009-12-01 |
| TWI430051B true TWI430051B (zh) | 2014-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW98105594A TWI430051B (zh) | 2008-02-22 | 2009-02-23 | 用於１９３奈米微影術之雙層光敏顯影劑可溶抗反射底塗層 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9638999B2 (enExample) |
| EP (1) | EP2255377B1 (enExample) |
| JP (1) | JP4918162B2 (enExample) |
| KR (1) | KR101697789B1 (enExample) |
| CN (1) | CN101952936B (enExample) |
| TW (1) | TWI430051B (enExample) |
| WO (1) | WO2009105556A2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090098490A1 (en) * | 2007-10-16 | 2009-04-16 | Victor Pham | Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing |
| US8383318B2 (en) | 2009-02-19 | 2013-02-26 | Brewer Science Inc. | Acid-sensitive, developer-soluble bottom anti-reflective coatings |
| WO2012018983A2 (en) * | 2010-08-05 | 2012-02-09 | Brewer Science Inc. | Methods of producing structures using a developer-soluble layer with multilayer technology |
| JP5278406B2 (ja) * | 2010-11-02 | 2013-09-04 | 信越化学工業株式会社 | パターン形成方法 |
| JP6035887B2 (ja) | 2011-06-21 | 2016-11-30 | セントラル硝子株式会社 | ポジ型レジスト組成物 |
| JP5751173B2 (ja) * | 2012-01-05 | 2015-07-22 | 信越化学工業株式会社 | パターン形成方法 |
| JP6062878B2 (ja) * | 2014-03-07 | 2017-01-18 | 信越化学工業株式会社 | 化学増幅型ポジ型レジスト組成物及びレジストパターン形成方法 |
| US9229326B2 (en) * | 2014-03-14 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
| KR102222818B1 (ko) | 2014-10-06 | 2021-03-04 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| JP6641687B2 (ja) * | 2014-12-01 | 2020-02-05 | 大日本印刷株式会社 | カラーフィルタの製造方法およびブラックマトリクス基板の製造方法 |
| WO2016179023A1 (en) * | 2015-05-01 | 2016-11-10 | Adarza Biosystems, Inc. | Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings |
| US9768022B2 (en) * | 2016-01-27 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Advanced cross-linkable layer over a substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH06230574A (ja) | 1993-02-05 | 1994-08-19 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
| JPH09205057A (ja) * | 1996-01-25 | 1997-08-05 | Hitachi Ltd | 半導体装置の製造方法 |
| JP3189773B2 (ja) * | 1998-01-09 | 2001-07-16 | 三菱電機株式会社 | レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置 |
| KR100421034B1 (ko) * | 1999-04-21 | 2004-03-04 | 삼성전자주식회사 | 레지스트 조성물과 이를 이용한 미세패턴 형성방법 |
| KR100337325B1 (ko) * | 1999-12-30 | 2002-05-22 | 이계안 | 엔진의 고압 연료 분사 장치의 소음 저감 브라켓트 |
| TW591341B (en) * | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
| US7265431B2 (en) * | 2002-05-17 | 2007-09-04 | Intel Corporation | Imageable bottom anti-reflective coating for high resolution lithography |
| US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| US20050255410A1 (en) | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
| EP2866093A1 (en) * | 2004-05-14 | 2015-04-29 | Nissan Chemical Industries, Limited | Anti-reflective coating forming composition containing vinyl ether compound and polyimide |
| WO2006059452A1 (ja) * | 2004-12-03 | 2006-06-08 | Nissan Chemical Industries, Ltd. | 二層型反射防止膜を用いたフォトレジストパターンの形成方法 |
| EP1691238A3 (en) * | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
| US20060177772A1 (en) | 2005-02-10 | 2006-08-10 | Abdallah David J | Process of imaging a photoresist with multiple antireflective coatings |
| US7816071B2 (en) * | 2005-02-10 | 2010-10-19 | Az Electronic Materials Usa Corp. | Process of imaging a photoresist with multiple antireflective coatings |
| US7816069B2 (en) | 2006-06-23 | 2010-10-19 | International Business Machines Corporation | Graded spin-on organic antireflective coating for photolithography |
-
2009
- 2009-02-19 US US12/389,135 patent/US9638999B2/en active Active
- 2009-02-19 JP JP2010547750A patent/JP4918162B2/ja active Active
- 2009-02-19 KR KR1020107021298A patent/KR101697789B1/ko active Active
- 2009-02-19 WO PCT/US2009/034540 patent/WO2009105556A2/en not_active Ceased
- 2009-02-19 EP EP09712806.0A patent/EP2255377B1/en active Active
- 2009-02-19 CN CN2009801060149A patent/CN101952936B/zh active Active
- 2009-02-23 TW TW98105594A patent/TWI430051B/zh active
Also Published As
| Publication number | Publication date |
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| EP2255377B1 (en) | 2013-12-04 |
| US9638999B2 (en) | 2017-05-02 |
| KR101697789B1 (ko) | 2017-01-18 |
| US20090226672A1 (en) | 2009-09-10 |
| EP2255377A2 (en) | 2010-12-01 |
| JP2011513772A (ja) | 2011-04-28 |
| WO2009105556A3 (en) | 2009-10-15 |
| WO2009105556A2 (en) | 2009-08-27 |
| EP2255377A4 (en) | 2011-11-09 |
| JP4918162B2 (ja) | 2012-04-18 |
| CN101952936A (zh) | 2011-01-19 |
| WO2009105556A4 (en) | 2010-01-28 |
| CN101952936B (zh) | 2013-09-18 |
| KR20100124303A (ko) | 2010-11-26 |
| TW200949460A (en) | 2009-12-01 |
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