KR101697789B1 - 감광성이며 현상액-용해성인 193-ｎｍ 리소그래피를 위한 이중층 바닥 반사-방지 코팅을 사용하여 마이크로일렉트로닉 구조물을 제작하는 방법 - Google Patents

감광성이며 현상액-용해성인 193-ｎｍ 리소그래피를 위한 이중층 바닥 반사-방지 코팅을 사용하여 마이크로일렉트로닉 구조물을 제작하는 방법 Download PDF

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KR101697789B1
KR101697789B1 KR1020107021298A KR20107021298A KR101697789B1 KR 101697789 B1 KR101697789 B1 KR 101697789B1 KR 1020107021298 A KR1020107021298 A KR 1020107021298A KR 20107021298 A KR20107021298 A KR 20107021298A KR 101697789 B1 KR101697789 B1 KR 101697789B1
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reflective coating
coating layer
polymer
value
microelectronic structure
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KR20100124303A (ko
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짐 메도르
더글라스 게레로
라밀-마르첼로 메르카도
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브레우어 사이언스 인코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020107021298A 2008-02-22 2009-02-19 감광성이며 현상액-용해성인 193-ｎｍ 리소그래피를 위한 이중층 바닥 반사-방지 코팅을 사용하여 마이크로일렉트로닉 구조물을 제작하는 방법 Active KR101697789B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3083008P 2008-02-22 2008-02-22
US61/030,830 2008-02-22
PCT/US2009/034540 WO2009105556A2 (en) 2008-02-22 2009-02-19 Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography

Publications (2)

Publication Number Publication Date
KR20100124303A KR20100124303A (ko) 2010-11-26
KR101697789B1 true KR101697789B1 (ko) 2017-01-18

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KR1020107021298A Active KR101697789B1 (ko) 2008-02-22 2009-02-19 감광성이며 현상액-용해성인 193-ｎｍ 리소그래피를 위한 이중층 바닥 반사-방지 코팅을 사용하여 마이크로일렉트로닉 구조물을 제작하는 방법

Country Status (7)

Country Link
US (1) US9638999B2 (enExample)
EP (1) EP2255377B1 (enExample)
JP (1) JP4918162B2 (enExample)
KR (1) KR101697789B1 (enExample)
CN (1) CN101952936B (enExample)
TW (1) TWI430051B (enExample)
WO (1) WO2009105556A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
US8383318B2 (en) 2009-02-19 2013-02-26 Brewer Science Inc. Acid-sensitive, developer-soluble bottom anti-reflective coatings
WO2012018983A2 (en) * 2010-08-05 2012-02-09 Brewer Science Inc. Methods of producing structures using a developer-soluble layer with multilayer technology
JP5278406B2 (ja) * 2010-11-02 2013-09-04 信越化学工業株式会社 パターン形成方法
JP6035887B2 (ja) 2011-06-21 2016-11-30 セントラル硝子株式会社 ポジ型レジスト組成物
JP5751173B2 (ja) * 2012-01-05 2015-07-22 信越化学工業株式会社 パターン形成方法
JP6062878B2 (ja) * 2014-03-07 2017-01-18 信越化学工業株式会社 化学増幅型ポジ型レジスト組成物及びレジストパターン形成方法
US9229326B2 (en) * 2014-03-14 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
KR102222818B1 (ko) 2014-10-06 2021-03-04 삼성전자주식회사 반도체 장치의 제조 방법
JP6641687B2 (ja) * 2014-12-01 2020-02-05 大日本印刷株式会社 カラーフィルタの製造方法およびブラックマトリクス基板の製造方法
WO2016179023A1 (en) * 2015-05-01 2016-11-10 Adarza Biosystems, Inc. Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings
US9768022B2 (en) * 2016-01-27 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced cross-linkable layer over a substrate

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
JPH06230574A (ja) 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd ポジ型感光性組成物
JPH09205057A (ja) * 1996-01-25 1997-08-05 Hitachi Ltd 半導体装置の製造方法
JP3189773B2 (ja) * 1998-01-09 2001-07-16 三菱電機株式会社 レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置
KR100421034B1 (ko) * 1999-04-21 2004-03-04 삼성전자주식회사 레지스트 조성물과 이를 이용한 미세패턴 형성방법
KR100337325B1 (ko) * 1999-12-30 2002-05-22 이계안 엔진의 고압 연료 분사 장치의 소음 저감 브라켓트
TW591341B (en) * 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
US7265431B2 (en) * 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
EP2866093A1 (en) * 2004-05-14 2015-04-29 Nissan Chemical Industries, Limited Anti-reflective coating forming composition containing vinyl ether compound and polyimide
WO2006059452A1 (ja) * 2004-12-03 2006-06-08 Nissan Chemical Industries, Ltd. 二層型反射防止膜を用いたフォトレジストパターンの形成方法
EP1691238A3 (en) * 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
US20060177772A1 (en) 2005-02-10 2006-08-10 Abdallah David J Process of imaging a photoresist with multiple antireflective coatings
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
US7816069B2 (en) 2006-06-23 2010-10-19 International Business Machines Corporation Graded spin-on organic antireflective coating for photolithography

Also Published As

Publication number Publication date
EP2255377B1 (en) 2013-12-04
US9638999B2 (en) 2017-05-02
US20090226672A1 (en) 2009-09-10
EP2255377A2 (en) 2010-12-01
JP2011513772A (ja) 2011-04-28
WO2009105556A3 (en) 2009-10-15
WO2009105556A2 (en) 2009-08-27
TWI430051B (zh) 2014-03-11
EP2255377A4 (en) 2011-11-09
JP4918162B2 (ja) 2012-04-18
CN101952936A (zh) 2011-01-19
WO2009105556A4 (en) 2010-01-28
CN101952936B (zh) 2013-09-18
KR20100124303A (ko) 2010-11-26
TW200949460A (en) 2009-12-01

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