TWI427169B - 較少產生粒子之含錳的銅合金濺鍍靶 - Google Patents
較少產生粒子之含錳的銅合金濺鍍靶 Download PDFInfo
- Publication number
- TWI427169B TWI427169B TW95130476A TW95130476A TWI427169B TW I427169 B TWI427169 B TW I427169B TW 95130476 A TW95130476 A TW 95130476A TW 95130476 A TW95130476 A TW 95130476A TW I427169 B TWI427169 B TW I427169B
- Authority
- TW
- Taiwan
- Prior art keywords
- manganese
- less
- copper alloy
- ppm
- containing copper
- Prior art date
Links
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 title claims description 46
- 229910052748 manganese Inorganic materials 0.000 title claims description 46
- 239000011572 manganese Substances 0.000 title claims description 46
- 229910000881 Cu alloy Inorganic materials 0.000 title claims description 36
- 239000002245 particle Substances 0.000 title claims description 19
- 238000005477 sputtering target Methods 0.000 title claims description 14
- 239000012535 impurity Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 230000003405 preventing effect Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005242 forging Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910001018 Cast iron Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- YXJGFVDFBZFVTQ-UHFFFAOYSA-N copper manganese Chemical compound [Cu][Mn][Cu] YXJGFVDFBZFVTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本發明係關於可同時進行半導體元件配線之擴散防止膜，以及種晶膜製膜之較少產生粒子之含錳的銅合金濺鍍靶。
已知通常半導體元件配線，係如於圖2之半導體元件配線部分剖面圖所示，於表面具有溝2之被覆了SiO2
等絕緣膜之基板(以下稱為基板)1，於其表面形成鉭金屬膜3做為擴散防止膜，於該鉭金屬膜3之上形成純銅製種晶膜4，進而於該純銅製種晶膜4之表面，藉由電鍍等形成配線薄膜5。
已知做為擴散防止膜之鉭金屬膜3，因鉭金屬本身價格昂貴，故已形成針對取代鉭金屬膜的低價之具有擴散防止作用的金屬膜之研究，近年來，如圖1之半導體元件配線部分剖面圖所示，藉由使用銅錳銅合金靶進行濺鍍，在具有溝2之被覆了SiO2
等絕緣膜之基板1的表面直接形成含錳銅合金膜，其後，將形成之含錳銅合金膜進行熱處理，含於前述之含錳銅合金膜7中之錳與基板之SiO2
等絕緣膜反應，生成含錳與矽的複合氧化物層6，因該含錳與矽的複合氧化物層6係作用為擴散防止膜，可省略形成價格昂貴的鉭金屬膜同時，得知可將前述之含錳銅合金膜7使用為種晶膜，目前正盛行這些含錳銅合金膜以及含錳
與矽的複合氧化物層之研究(參照非專利文件1、2)。
非專利文件1：(有限)半導體理工學研究中心(STARC)之網頁(2005年6月8日)
非專利文件2：IITC發表之摘要(2005年6月8日)
然而，欲藉由使用由上述錳：含有0.6~30質量%，殘餘部分為銅及雜質所構成之成分組成的含錳的銅合金靶，進行濺鍍而形成含錳的銅合金靶薄膜時，進行濺鍍之際會有產生大量粒子的缺點，因此成為成品率低下，成本上升的原因。
於是，本發明之發明者們，為得到進行濺鍍之際較少產生粒子之含錳的銅合金靶而進行研究，其結果獲得(A)欲藉由使用由上述錳：含有0.6~30質量%，殘餘部分為銅及雜質所構成之成分組成的含錳的銅合金靶，進行濺鍍而形成含錳的銅合金靶薄膜時，前述含錳的銅合金靶中所含雜質的量愈少，愈可抑制減少粒子之產生，欲極力使該雜質以所含之金屬系雜質合計減少至40ppm以下，再將氧減少至10ppm以下，氮為5ppm以下，氫為5ppm以下，碳為10ppm以下時，進行濺鍍時所產生的粒子數銳減，(B)此外，該含錳的銅合金靶為晶粒尺寸為30μm以下之等軸再結晶結構時，可更加抑制產生粒子，之研究結果。
本發明係以上述之研究結果而完成者，其係具有下述特徵，(1)一種較少產生粒子之含錳的銅合金濺鍍靶，其為具有由錳：含有0.6~30質量%，殘餘部分為銅及雜質所形成之組成，且前述雜質係被控制使金屬系雜質合計40ppm以下，且氧為10ppm以下，氮為5ppm以下，氫為5ppm以下，碳為10ppm以下之銅合金所構成，(2)如上述(1)之較少產生粒子之含錳的銅合金濺鍍靶，其中該含錳的銅合金濺鍍靶係具有晶粒尺寸為30μm以下之等軸再結晶結構。
本發明於製造含錳的銅合金濺鍍靶，係於純度為99.9999%以上之高純度電解銅中，添加純度為99.9%以上之高純度電解錳，於充有惰性氣體之高純度石墨模具中，以高週波溶解而製造含錳的銅合金鑄錠，再對該鑄錠進行熱作，使其於熱作完成後溫度在450℃以上，而製造為熱作材，進而因應需要將該熱作材經水冷後，除去表面厚度為0.2mm以上者，再反覆進行冷作與退火，最後藉由退火而可得。
其次，說明本發明之含錳的銅合金濺鍍靶中限制組成成分之理由。
(a)錳
錳成分具有將含錳的銅合金濺鍍靶之結晶粒微細化，進而抑制結晶粒成長之效果，還具有於形成後之含錳的銅合金膜與基板的界線部分，做為擴散防止膜，而形成含錳
與矽之複合氧化物層之作用，但其含有量未滿0.6質量%時，無法得到所期待的效果，反之，含有量超過30質量%時，靶之熱傳導率降低，於進行濺鍍時伴隨靶的溫度上升，因使所得之含錳的銅合金膜的電阻增加，而不適合使用為半導體元件配線。因此，本發明之含錳的銅合金濺鍍靶中所含的錳決定為0.6~30質量%(1.0~20質量%更佳)。
(b)雜質
使用含錳的銅合金靶進行濺鍍時所產生的粒子數，當愈減少含錳的銅合金靶中所含雜質的量時，愈可抑制粒子的產生，而鐵、鎳、鉻、矽、鉛、鈷、鎂、鋅等金屬系雜質，其合計超過40ppm，進而氧、氮、氫、碳等非金屬系雜質中氧超過10ppm，氮超過5ppm，氫超過5ppm，碳超過10ppm時，會使所產生的粒子數銳增。因此，本發明之含錳的銅合金濺鍍靶中所含的雜質決定為金屬系雜質合計40ppm以下，以及氧為10ppm以下，氮為5ppm以下，氫為5ppm以下，碳為10ppm以下。
本發明之使用含錳的銅合金濺鍍靶，所製造之含錳的銅合金膜，因可取代鉭金屬膜而同時形成擴散防止層與種晶膜，故可由省去形成價格昂貴的鉭金屬膜而降低成本，進而因可減低於進行濺鍍時產生粒子，故具有可低減半導體元件等的製造成本的良好效果。
以下藉由實施例來具體說明本發明之含錳的銅合金濺鍍靶。
準備純度為99.9999質量%以上之高純度電解銅，以及純度為99.9質量%以上之電解錳，將該高純度電解銅以及量不相同之電解錳，置於充有氬氣體之高純度石墨模具中，以高週波溶解，於溶解中藉由通入氣體或添加微量元素來調整雜質的含有量，將依此所得之溶融材料以石碳鑄模鑄造，再將所得之鑄錠以使其最終溫度為450℃以上進行熱鍛，熱鍛完成後進行水冷，其後，將熱鍛材表面全體厚度平面切削為1.5mm。
之後，因應需要將經平面切削後之熱鍛材冷軋後退火，再反覆進行冷軋與退火，最後再進行再結晶退火，進而於所得之退火材以旋盤加工，使其尺寸為外徑300mm×厚度5mm，以此來製造具有如表1所示成分組成之本發明靶1~8以及比較靶1~6。
準備市售之電解銅，將此市售之電解銅與先前準備之電解錳，置於充有氬惰性氣體之高純度石墨模具中，以高週波溶解，所得之溶融材料以石碳鑄模鑄造製造鑄錠，再將所得之鑄錠以使其最終溫度為450℃以上進行熱鍛，熱鍛完成後進行水冷，其後，將熱鍛材表面全體厚度為1.5mm之深度進行研削。
之後，將經表面研削後之熱鍛材冷軋後退火，再反覆進行冷軋與退火後，最後再進行矯直退火，進而於所得之
矯直退火材以旋盤加工，使其尺寸為外徑300mm×厚度5mm，以此來製造具有如表1所示成分組成之過去靶。再切斷本發明靶1~8，比較靶1~6以及過去靶，測定其切斷面之平均結晶粒徑，將其結果示於表1。
準備純鋁製的背板，將該純鋁製的背板與上述本發明靶1~8，比較靶1~6以及過去靶疊合，於溫度為500℃下，施以HIP而將本發明靶1~8，比較靶1~6以及過去靶與純鋁製的背板接合，製造具背板的靶。
使用將本發明靶1~8，比較靶1~6以及過去靶與純鋁製的背板HIP接合所得之具背板的靶，於
電源：交流電
電力：4KW
惰性氣體組成：氬氣
濺鍍氣體壓力：1Pa
靶與基體距離：80mm
濺鍍時間：5分鐘的高輸出條件下，於被覆了SiO2
等絕緣膜之基板上形成薄膜。
以粒子計數器測定此時所產生的粒子數，將其結果示於表1。
自表1所示結果，可知本發明靶1~8由於規定金屬系雜質為40ppm以下，以及氧為10ppm以下，氮為5ppm以下，氫為5ppm以下，碳為10ppm以下，與雜質含量高的過去靶相比，所產生的粒子較少。比較例1因靶的純度較高，靶的平均結晶粒徑變為過大而使粒子產生變多，另外，亦得知比較靶2~6因雜質過多，而使粒子產生變多。
1‧‧‧基板
2‧‧‧溝
3‧‧‧鉭金屬膜
4‧‧‧純銅製種晶膜
5‧‧‧配線薄膜
6‧‧‧含錳與矽的複合氧化物層
7‧‧‧含錳銅合金膜
〔圖1〕近年來所開發製造形成的使用靶所製造的種晶膜之半導體元件配線部分的剖面圖。
〔圖2〕製造形成使用過去的靶所製造的種晶膜之半導體元件配線部分的剖面圖。
Claims (1)
- 一種較少產生粒子之含錳的銅合金濺鍍靶，其特徵為具有由錳含有0.6~30質量%，殘餘部分為銅及雜質所形成的組成銅合金，其中前述雜質係被控制使得包括Fe、Ni、Cr、Si、Pb、Co、Mg、及Zn之金屬系雜質的含量為40ppm以下，氧含量為10ppm以下，氮含量為5ppm以下，氫含量為5ppm以下，而碳含量為10ppm以下，且其中前述含錳的銅合金濺鍍靶具有晶粒尺寸為30μm以下之等軸再結晶結構。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005238171A JP4756458B2 (ja) | 2005-08-19 | 2005-08-19 | パーティクル発生の少ないＭｎ含有銅合金スパッタリングターゲット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200718795A TW200718795A (en) | 2007-05-16 |
| TWI427169B true TWI427169B (zh) | 2014-02-21 |
Family
ID=37757638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95130476A TWI427169B (zh) | 2005-08-19 | 2006-08-18 | 較少產生粒子之含錳的銅合金濺鍍靶 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9028658B2 (zh) |
| JP (1) | JP4756458B2 (zh) |
| CN (1) | CN100567559C (zh) |
| TW (1) | TWI427169B (zh) |
| WO (1) | WO2007020981A1 (zh) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1990432B1 (en) * | 2006-02-28 | 2012-04-11 | Advanced Interconnect Materials, LLC | Semiconductor device, its manufacturing method, and sputtering target material for use in the method |
| US20100013096A1 (en) * | 2006-10-03 | 2010-01-21 | Nippon Mining & Metals Co., Ltd. | Cu-Mn Alloy Sputtering Target and Semiconductor Wiring |
| US8168532B2 (en) | 2007-11-14 | 2012-05-01 | Fujitsu Limited | Method of manufacturing a multilayer interconnection structure in a semiconductor device |
| WO2011034127A1 (ja) * | 2009-09-18 | 2011-03-24 | 古河電気工業株式会社 | スパッタリングターゲットに用いられる銅材料およびその製造方法 |
| JP5512226B2 (ja) | 2009-10-27 | 2014-06-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP2012149294A (ja) * | 2011-01-18 | 2012-08-09 | Hitachi Cable Ltd | スパッタリングターゲット、半導体装置および半導体装置の製造方法 |
| KR101934977B1 (ko) * | 2011-08-02 | 2019-03-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR101323151B1 (ko) * | 2011-09-09 | 2013-10-30 | 가부시키가이샤 에스에이치 카퍼프로덕츠 | 구리-망간합금 스퍼터링 타겟재, 그것을 사용한 박막 트랜지스터 배선 및 박막 트랜지스터 |
| KR20160040725A (ko) * | 2011-09-14 | 2016-04-14 | 제이엑스 킨조쿠 가부시키가이샤 | 고순도 구리망간 합금 스퍼터링 타깃 |
| JP5329726B2 (ja) | 2011-09-14 | 2013-10-30 | Ｊｘ日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
| CN103827349B (zh) * | 2011-09-30 | 2016-08-24 | 吉坤日矿日石金属株式会社 | 溅射靶及其制造方法 |
| US9165750B2 (en) | 2012-01-23 | 2015-10-20 | Jx Nippon Mining & Metals Corporation | High purity copper—manganese alloy sputtering target |
| JP2014043643A (ja) * | 2012-08-03 | 2014-03-13 | Kobelco Kaken:Kk | Ｃｕ合金薄膜形成用スパッタリングターゲットおよびその製造方法 |
| JP5724998B2 (ja) * | 2012-12-10 | 2015-05-27 | 三菱マテリアル株式会社 | 保護膜形成用スパッタリングターゲットおよび積層配線膜 |
| JP6091911B2 (ja) * | 2013-01-29 | 2017-03-08 | 株式会社Ｓｈカッパープロダクツ | Ｃｕ−Ｍｎ合金スパッタリングターゲット材、Ｃｕ−Ｍｎ合金スパッタリングターゲット材の製造方法、および半導体素子 |
| JP6376438B2 (ja) * | 2013-05-31 | 2018-08-22 | 日立金属株式会社 | Ｃｕ−Ｍｎ合金スパッタリングターゲット材およびその製造方法 |
| TW201529877A (zh) * | 2013-12-27 | 2015-08-01 | Jx Nippon Mining & Metals Corp | 高純度銅或銅合金濺鍍靶及其製造方法 |
| JP2015193909A (ja) * | 2014-03-25 | 2015-11-05 | Jx日鉱日石金属株式会社 | スパッタリングターゲット及びその製造方法並びにスパッタリング法で形成した膜 |
| JP6398594B2 (ja) * | 2014-10-20 | 2018-10-03 | 三菱マテリアル株式会社 | スパッタリングターゲット |
| JP6435981B2 (ja) * | 2015-04-28 | 2018-12-12 | 三菱マテリアル株式会社 | 銅合金スパッタリングターゲット |
| US10494712B2 (en) * | 2015-05-21 | 2019-12-03 | Jx Nippon Mining & Metals Corporation | Copper alloy sputtering target and method for manufacturing same |
| KR102192280B1 (ko) | 2016-03-09 | 2020-12-17 | 제이엑스금속주식회사 | 아르곤 또는 수소를 포함하는 구리 및 구리 합금 타깃 |
| JP2018145518A (ja) * | 2017-03-06 | 2018-09-20 | 三菱マテリアル株式会社 | Ｃｕ−Ｎｉ合金スパッタリングターゲット |
| WO2018163861A1 (ja) * | 2017-03-06 | 2018-09-13 | 三菱マテリアル株式会社 | Ｃｕ－Ｎｉ合金スパッタリングターゲット及びその製造方法 |
| US10760156B2 (en) * | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
| US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
| TWI833747B (zh) * | 2018-04-20 | 2024-03-01 | 美商康寧公司 | 形成金屬互連的方法及包含金屬互連的顯示器蓋片 |
| CN109338314A (zh) * | 2018-12-04 | 2019-02-15 | 有研亿金新材料有限公司 | 一种超细晶铜锰合金靶材的加工方法 |
| JP7175456B2 (ja) * | 2019-12-06 | 2022-11-21 | 松田産業株式会社 | 蒸着材料及びその製造方法 |
| TW202309319A (zh) * | 2021-08-25 | 2023-03-01 | 光洋應用材料科技股份有限公司 | 銅合金濺鍍靶材及其製法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63238268A (ja) * | 1987-03-27 | 1988-10-04 | Hitachi Ltd | スパツタリング用タ−ゲツトの製造法 |
| US6001227A (en) * | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
| US20030052000A1 (en) * | 1997-07-11 | 2003-03-20 | Vladimir Segal | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5776101A (en) * | 1980-10-28 | 1982-05-13 | Seiko Instr & Electronics Ltd | Manufacture of rare earth metal magnet |
| US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
| JP2002294437A (ja) * | 2001-04-02 | 2002-10-09 | Mitsubishi Materials Corp | 銅合金スパッタリングターゲット |
| WO2006025347A1 (ja) * | 2004-08-31 | 2006-03-09 | National University Corporation Tohoku University | 銅合金及び液晶表示装置 |
| US6896748B2 (en) * | 2002-07-18 | 2005-05-24 | Praxair S.T. Technology, Inc. | Ultrafine-grain-copper-base sputter targets |
| US7740721B2 (en) * | 2003-03-17 | 2010-06-22 | Nippon Mining & Metals Co., Ltd | Copper alloy sputtering target process for producing the same and semiconductor element wiring |
| WO2005021828A2 (en) * | 2003-08-21 | 2005-03-10 | Honeywell International Inc. | Copper-containing pvd targets and methods for their manufacture |
| JP5068925B2 (ja) * | 2004-09-03 | 2012-11-07 | Ｊｘ日鉱日石金属株式会社 | スパッタリングターゲット |
-
2005
- 2005-08-19 JP JP2005238171A patent/JP4756458B2/ja not_active Expired - Fee Related
-
2006
- 2006-08-17 CN CN 200680029661 patent/CN100567559C/zh active Active
- 2006-08-17 WO PCT/JP2006/316182 patent/WO2007020981A1/ja active Application Filing
- 2006-08-17 US US12/063,879 patent/US9028658B2/en active Active
- 2006-08-18 TW TW95130476A patent/TWI427169B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63238268A (ja) * | 1987-03-27 | 1988-10-04 | Hitachi Ltd | スパツタリング用タ−ゲツトの製造法 |
| US20030052000A1 (en) * | 1997-07-11 | 2003-03-20 | Vladimir Segal | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
| US6001227A (en) * | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007020981A1 (ja) | 2007-02-22 |
| CN100567559C (zh) | 2009-12-09 |
| US20090101495A1 (en) | 2009-04-23 |
| TW200718795A (en) | 2007-05-16 |
| JP2007051351A (ja) | 2007-03-01 |
| US9028658B2 (en) | 2015-05-12 |
| CN101243201A (zh) | 2008-08-13 |
| JP4756458B2 (ja) | 2011-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI427169B (zh) | 較少產生粒子之含錳的銅合金濺鍍靶 | |
| JP4869415B2 (ja) | 純銅板の製造方法及び純銅板 | |
| TW200302287A (en) | Copper alloy sputtering target and the manufacturing method thereof | |
| CN102978483B (zh) | 锂离子正极集流体用铝合金箔及其制造方法 | |
| WO2021023284A1 (zh) | 高钪含量铝钪合金靶材及其制备方法 | |
| CN113122763B (zh) | 一种高强韧性高熵合金制备方法 | |
| CN107835863A (zh) | 磁盘用铝合金基板及其制造方法 | |
| JP2002294437A (ja) | 銅合金スパッタリングターゲット | |
| CN112553497B (zh) | 均温板用钛铜合金板及均温板 | |
| JP5571196B2 (ja) | スパッタリング用チタンターゲット | |
| TWI572725B (zh) | ＭｏＴｉ靶材的製造方法 | |
| US10297429B2 (en) | High-purity copper-chromium alloy sputtering target | |
| US20190284668A1 (en) | Aluminum alloy substrate for magnetic disc and method of manufacture therefor | |
| TWI654323B (zh) | 銅合金濺鍍靶材及銅合金濺鍍靶材之製造方法 | |
| CN112553496A (zh) | 均温板用钛铜合金板及均温板 | |
| JP2002294438A (ja) | 銅合金スパッタリングターゲット | |
| JP5837202B2 (ja) | 高純度銅コバルト合金スパッタリングターゲット | |
| JP3896431B2 (ja) | 銅または銅合金の製造方法 | |
| JP4110563B2 (ja) | 銅合金スパッタリングターゲット | |
| JP2015067883A (ja) | 連続鋳造用モールド材 | |
| JP2023097756A (ja) | 銅合金、銅合金塑性加工材、電子・電気機器用部品、端子、バスバー、リードフレーム、放熱基板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |