TWI425322B - 偵測裝置、曝光裝置以及裝置製造方法 - Google Patents

偵測裝置、曝光裝置以及裝置製造方法 Download PDF

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Publication number
TWI425322B
TWI425322B TW099124551A TW99124551A TWI425322B TW I425322 B TWI425322 B TW I425322B TW 099124551 A TW099124551 A TW 099124551A TW 99124551 A TW99124551 A TW 99124551A TW I425322 B TWI425322 B TW I425322B
Authority
TW
Taiwan
Prior art keywords
light
mark
substrate
photoelectric conversion
conversion device
Prior art date
Application number
TW099124551A
Other languages
English (en)
Chinese (zh)
Other versions
TW201107904A (en
Inventor
三島和彥
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201107904A publication Critical patent/TW201107904A/zh
Application granted granted Critical
Publication of TWI425322B publication Critical patent/TWI425322B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW099124551A 2009-08-10 2010-07-26 偵測裝置、曝光裝置以及裝置製造方法 TWI425322B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009186150A JP5406624B2 (ja) 2009-08-10 2009-08-10 検出装置、露光装置及びデバイスの製造方法

Publications (2)

Publication Number Publication Date
TW201107904A TW201107904A (en) 2011-03-01
TWI425322B true TWI425322B (zh) 2014-02-01

Family

ID=43535074

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099124551A TWI425322B (zh) 2009-08-10 2010-07-26 偵測裝置、曝光裝置以及裝置製造方法

Country Status (4)

Country Link
US (1) US8659743B2 (https=)
JP (1) JP5406624B2 (https=)
KR (1) KR101319136B1 (https=)
TW (1) TWI425322B (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5162006B2 (ja) 2011-06-01 2013-03-13 キヤノン株式会社 検出装置、露光装置、および、デバイスの製造方法
JP6025346B2 (ja) * 2012-03-05 2016-11-16 キヤノン株式会社 検出装置、露光装置及びデバイスを製造する方法
JP5743958B2 (ja) * 2012-05-30 2015-07-01 キヤノン株式会社 計測方法、露光方法および装置
JP6150490B2 (ja) 2012-10-19 2017-06-21 キヤノン株式会社 検出装置、露光装置、それを用いたデバイスの製造方法
KR102002960B1 (ko) * 2012-12-13 2019-07-24 삼성디스플레이 주식회사 정렬 장치, 이를 포함하는 노광 장치 및 액정 표시 장치의 제조 방법
KR102120893B1 (ko) * 2012-12-14 2020-06-10 삼성디스플레이 주식회사 노광장치, 그 제어방법 및 노광을 위한 정렬방법
US9304403B2 (en) * 2013-01-02 2016-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for lithography alignment
JP6226525B2 (ja) * 2013-01-15 2017-11-08 キヤノン株式会社 露光装置、露光方法、それらを用いたデバイスの製造方法
JP6302185B2 (ja) * 2013-07-18 2018-03-28 キヤノン株式会社 検出装置、露光装置及び物品の製造方法
JP6366261B2 (ja) 2013-12-05 2018-08-01 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
JP6462993B2 (ja) * 2014-04-02 2019-01-30 キヤノン株式会社 露光装置および物品製造方法
CN106164778B (zh) * 2014-04-28 2018-02-09 Asml荷兰有限公司 估计图案形成装置的变形和/或其位置的改变
JP6061912B2 (ja) * 2014-12-08 2017-01-18 キヤノン株式会社 計測方法、露光方法および装置
CN107290937B (zh) * 2016-03-31 2018-10-16 上海微电子装备（集团）股份有限公司 一种投影曝光装置及方法
US10527959B2 (en) 2016-08-30 2020-01-07 Asml Netherlands B.V. Position sensor, lithographic apparatus and method for manufacturing devices
JP6791584B2 (ja) * 2017-02-01 2020-11-25 株式会社ディスコ 加工方法
JP6980562B2 (ja) * 2018-02-28 2021-12-15 キヤノン株式会社 パターン形成装置、アライメントマークの検出方法及びパターン形成方法
KR20230052877A (ko) * 2020-08-17 2023-04-20 도쿄엘렉트론가부시키가이샤 반도체 제조를 위해 절대 참조물을 통해 오버레이 결과물을 제조하기 위한 방법
US11796924B2 (en) 2022-01-04 2023-10-24 Nanya Technology Corporation Method for overlay error correction and method for manufacturing a semiconductor device structure with overlay marks
TWI833185B (zh) * 2022-01-04 2024-02-21 南亞科技股份有限公司 疊置誤差的校正方法及半導體元件的製備方法
US12002765B2 (en) 2022-01-04 2024-06-04 Nanya Technology Corporation Marks for overlay measurement and overlay error correction
TWI895832B (zh) * 2022-11-07 2025-09-01 南韓商奧路絲科技有限公司 圖像獲取方法及裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10307004A (ja) * 1997-05-07 1998-11-17 Disco Abrasive Syst Ltd 被加工物認識装置
US20050140951A1 (en) * 2001-01-15 2005-06-30 Asml Netherlands B.V. Lithographic apparatus
TW200623232A (en) * 2004-08-19 2006-07-01 Nikon Corp Alignment information display method, program thereof, alignment method, exposure method, device manufacturing method, display system, display device, program, and measurement/inspection device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01214118A (ja) * 1988-02-23 1989-08-28 Mitsubishi Electric Corp 半導体製造装置
JP2737744B2 (ja) 1995-04-26 1998-04-08 日本電気株式会社 ウエハプロービング装置
JP4192423B2 (ja) * 1997-11-20 2008-12-10 株式会社ニコン マーク検出方法、位置検出装置、露光方法及び装置、デバイス製造方法、並びにデバイス
JPH11304422A (ja) * 1998-04-20 1999-11-05 Nikon Corp 位置検出装置及び位置検出方法並びに露光装置
JP2000299276A (ja) * 1999-04-15 2000-10-24 Nikon Corp 露光装置
JP2001194321A (ja) * 2000-01-12 2001-07-19 Tokyo Seimitsu Co Ltd 半導体ウエハの検査装置
KR100579603B1 (ko) * 2001-01-15 2006-05-12 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치
JP2005005444A (ja) * 2003-06-11 2005-01-06 Nikon Corp アライメント装置、露光装置、アライメント方法、露光方法及び位置情報検出方法
KR20050064458A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 패턴 검사 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10307004A (ja) * 1997-05-07 1998-11-17 Disco Abrasive Syst Ltd 被加工物認識装置
US20050140951A1 (en) * 2001-01-15 2005-06-30 Asml Netherlands B.V. Lithographic apparatus
TW200623232A (en) * 2004-08-19 2006-07-01 Nikon Corp Alignment information display method, program thereof, alignment method, exposure method, device manufacturing method, display system, display device, program, and measurement/inspection device

Also Published As

Publication number Publication date
US8659743B2 (en) 2014-02-25
JP5406624B2 (ja) 2014-02-05
KR20110016398A (ko) 2011-02-17
JP2011040549A (ja) 2011-02-24
US20110033790A1 (en) 2011-02-10
KR101319136B1 (ko) 2013-10-17
TW201107904A (en) 2011-03-01

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