TWI424793B - 電漿處理裝置 - Google Patents

電漿處理裝置 Download PDF

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Publication number
TWI424793B
TWI424793B TW099123022A TW99123022A TWI424793B TW I424793 B TWI424793 B TW I424793B TW 099123022 A TW099123022 A TW 099123022A TW 99123022 A TW99123022 A TW 99123022A TW I424793 B TWI424793 B TW I424793B
Authority
TW
Taiwan
Prior art keywords
electrode
plasma processing
processing apparatus
heat sink
electrodes
Prior art date
Application number
TW099123022A
Other languages
English (en)
Chinese (zh)
Other versions
TW201119516A (en
Inventor
Yoshiyuki Nakazono
Seiro Yuge
Original Assignee
Panasonic Ind Devices Sunx Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Ind Devices Sunx Co filed Critical Panasonic Ind Devices Sunx Co
Publication of TW201119516A publication Critical patent/TW201119516A/zh
Application granted granted Critical
Publication of TWI424793B publication Critical patent/TWI424793B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW099123022A 2009-07-16 2010-07-13 電漿處理裝置 TWI424793B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009168147A JP4848493B2 (ja) 2009-07-16 2009-07-16 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201119516A TW201119516A (en) 2011-06-01
TWI424793B true TWI424793B (zh) 2014-01-21

Family

ID=43486353

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099123022A TWI424793B (zh) 2009-07-16 2010-07-13 電漿處理裝置

Country Status (4)

Country Link
JP (1) JP4848493B2 (ja)
KR (1) KR101200876B1 (ja)
CN (1) CN101959361A (ja)
TW (1) TWI424793B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012256501A (ja) * 2011-06-08 2012-12-27 Tokyo Institute Of Technology プラズマ生成用ガスおよびプラズマ生成方法並びにこれにより生成された大気圧プラズマ
US9144858B2 (en) 2011-11-18 2015-09-29 Recarbon Inc. Plasma generating system having movable electrodes
CN103790794B (zh) * 2014-03-03 2016-06-01 哈尔滨工业大学 多级会切磁场等离子体推力器用辐射散热装置
JP2017107781A (ja) * 2015-12-11 2017-06-15 日本特殊陶業株式会社 プラズマリアクタ及び積層体用クランプ
CN114294760A (zh) * 2022-01-06 2022-04-08 成都万物之成科技有限公司 空气消杀装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190299A (ja) * 1987-01-31 1988-08-05 東京エレクトロン株式会社 プラズマ装置
JP2008080296A (ja) * 2006-09-28 2008-04-10 Nec Corp 紫外線照射装置、照射対象物加熱制御方法及び赤外線発生手段用温度調整制御プログラム
TW200901832A (en) * 2007-02-20 2009-01-01 Matsushita Electric Works Ltd Plasma processor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6666031B2 (en) * 2002-03-14 2003-12-23 Komatsu, Ltd. Fluid temperature control apparatus
CN1323751C (zh) * 2003-05-27 2007-07-04 松下电工株式会社 等离子体处理装置、生成等离子体反应容器的制造方法及等离子体处理方法
JP2007080688A (ja) * 2005-09-14 2007-03-29 Sekisui Chem Co Ltd プラズマ処理装置の電極構造
JP2006210932A (ja) * 2006-02-01 2006-08-10 Kyocera Corp ウエハ加熱装置
JP4942360B2 (ja) * 2006-02-20 2012-05-30 積水化学工業株式会社 プラズマ処理装置の電極構造
JP4968883B2 (ja) * 2006-03-30 2012-07-04 日本碍子株式会社 リモート式プラズマ処理装置
JP2008153065A (ja) * 2006-12-18 2008-07-03 Sekisui Chem Co Ltd プラズマ処理装置
JP2008257920A (ja) * 2007-04-02 2008-10-23 Sekisui Chem Co Ltd プラズマ処理装置
JP4937037B2 (ja) * 2007-08-07 2012-05-23 積水化学工業株式会社 プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190299A (ja) * 1987-01-31 1988-08-05 東京エレクトロン株式会社 プラズマ装置
JP2008080296A (ja) * 2006-09-28 2008-04-10 Nec Corp 紫外線照射装置、照射対象物加熱制御方法及び赤外線発生手段用温度調整制御プログラム
TW200901832A (en) * 2007-02-20 2009-01-01 Matsushita Electric Works Ltd Plasma processor

Also Published As

Publication number Publication date
TW201119516A (en) 2011-06-01
KR20110007583A (ko) 2011-01-24
CN101959361A (zh) 2011-01-26
JP4848493B2 (ja) 2011-12-28
KR101200876B1 (ko) 2012-11-13
JP2011023244A (ja) 2011-02-03

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