TWI422859B - 微機電系統裝置、干涉式調變器、製作一光學調變器之方法及操作一微機電系統裝置之方法 - Google Patents
微機電系統裝置、干涉式調變器、製作一光學調變器之方法及操作一微機電系統裝置之方法 Download PDFInfo
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- G—PHYSICS
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- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81B2201/00—Specific applications of microelectromechanical systems
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- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
- G09G3/3466—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on interferometric effect
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Description
本申請案概言之係關於微機電系統裝置,更具體而言,係關於光學調變器。
微機電系統(MEMS)包括微機械元件、激勵器及電子元件。可採用沉積、蝕刻或其他蝕刻掉基板及/或所沉積材料層之某些部分或添加某些層以形成電和機電裝置之微機械加工製程製成微機械元件。一種類型之MEMS裝置被稱為干涉式調變器。本文中所用術語「干涉式調變器」或「干涉式光調變器」係指一種使用光學干涉原理來選擇性地吸收及/或反射光之裝置。在某些實施例中,干涉式調變器可包含一對導電板,其中之一或二者均可全部或部分地透明及/或為反射性,且在施加一個適當之電信號時能夠相對運動。在一特定實施例中,其中一個板可包含一沉積在一基板上之穩定層,另一個板可包含一藉由一氣隙與該穩定層隔開之金屬隔膜。如在本文中所更詳細說明,其中一個板相對於另一個板之位置可改變入射於干涉式調變器上之光之光學干涉。上述裝置具有廣泛之應用範圍,且在此項技術中,利用及/或修改該等類型裝置之特徵以便能夠利用其特性來改善現有產品及製造目前尚未開發之新產品將頗為有益。
本發明之系統、方法及裝置均具有多個態樣,任一單個態樣均不能單獨決定其所期望之特性。現在,簡要說明較主要之特性,但此並不限定本發明之範圍。在考量此討論內容後,尤其係在閱讀標題為「具體實施方式」之部分後,人們即可理解本發明之特性如何提供優於其他顯示裝置之優點。
本文說明用於製造一MEMS裝置之設備、方法及包含該MEMS裝置之系統,該MEMS裝置舉例而言係一干涉式光學調變器,其包括一基板、一可移動鏡面、一可變形層及一支撐結構。在某些實施例中,該支撐結構包括複數個支柱。一連接器將該可移動鏡面緊固至該可變形層。該連接器與該支柱中之至少一者係一包含一第一組件及一第二組件之複合物,其中該第一組件形成該連接器與支柱中至少一者之周邊之至少一部分。
相應地,本文所述之一實施例提供一種微機電系統裝置,其包括:一基板;一可變形層;一支撐該可變形層之支撐結構;一位於該基板與該可變形層之間之可移動導體;及至少一個將該可移動導體緊固至該可變形層之連接器。該連接器與該支撐結構中之至少一者包含一第一組件及一第二組件,其中該第一組件之至少一部分位於該連接器與該支撐結構中至少一者之周邊上;及該第一組件包括一電絕緣填充材料。
另一實施例提供一種用於製作一光學調變器之方法及一種由此製成之光學調變器,該方法包括:於一基板上形成一由一第一犧牲材料形成之層、一鏡面及一由一第二犧牲材料形成之層;穿過該由該第二犧牲材料形成之層形成一第一開口,藉以露出該鏡面;及以一填充材料填充該開口之各側之至少一部分。
另一實施例提供一種微機電系統裝置,其包括:一可變形導電層;一可移動導電層;一於該可變形導電層與該可移動導電層之間延伸之導電芯體;及一環繞該導電芯體的由一電絕緣材料形成之層。
另一實施例提供一種微機電系統裝置,其包括:一基板;一形成於該基板上的由一第一犧牲材料形成之層;一形成於由該第一犧牲材料形成之層上之導體;一形成於該導體上的由一第二犧牲材料形成之層;一穿過該由該第二犧牲材料形成之層之第一開口,其中該第一開口使該導體外露;及一用於以一填充材料填充第一開口中之斷續點之構件。某些實施例進一步包括:一形成於由該第二犧牲材料形成之該層上之可變形層;及複數個於該基板與該可變形層之間延伸之支柱。
另一實施例提供一種微機電系統裝置,其包括:一可移動構件;一用於支撐該可移動構件之支撐構件;一用於在該可移動構件與該用於支撐該可移動構件之構件之間傳送電信號之導電構件;及一填充構件,其用於利於形成該用於傳送電信號之構件。
另一實施例提供一種操作一微機電系統裝置之方法。該微機電系統裝置包括:一隔室;一可變形導電層;一可移動導電層,其中該可移動導電層可在該隔室中於一第一位置與一第二位置之間移動;一於該可變形導電層與該可移動導電層之間延伸之導電芯體;及一環繞該導電芯體的由一電絕緣材料形成之層。該方法包括:對該可移動導電層施加一第一電壓,該第一電壓足以使該可移動導電層自該第一位置移動至該第二位置。
以下詳細說明係針對本發明之某些具體實施例。然而,本發明可藉由多種不同之方式實施。在本說明中,會參照附圖,在所有附圖中,使用相同之編號標識相同之部件。根據以下說明容易看出,本發明可實施於任一經組態以用於顯示影像(無論係動態影像(例如視頻)還係靜態影像(例如靜止影像),無論係文字影像還係圖片影像)之裝置中。更具體而言,本發明涵蓋,本發明可在例如(但不限於)以下等眾多電子裝置中實施或與該等電子裝置相關聯:行動電話、無線裝置、個人資料助理(PDA)、手持式電腦或可攜式電腦、GPS接收器/導航器、照相機、MP3播放器、攝錄機、遊戲控制臺、手錶、鐘錶、計算器、電視監視器、平板顯示器、電腦監視器、汽車顯示器(例如里程表顯示器等)、駕駛艙控制裝置及/或顯示器、照相機景物顯示器(例如車輛之後視照相機顯示器)、電子照片、電子告示牌或標牌、投影儀、建築結構、包裝及美學結構(例如一件珠寶上之影像顯示器)。與本文所述具有類似結構之MEMS裝置亦可用於非顯示應用中,例如用於電子切換裝置中。
本文所揭示MEMS裝置之實施例包含一用於將可移動鏡面緊固至可變形層之複合連接器。該複合連接器包含一第一組件及一第二組件,其中該第一組件包括一填充材料。在某些實施例中,該連接器之第一組件之至少一部分設置於該連接器之周邊上。在某些實施例中,該第一組件形成該連接器之至少一部分之側面,舉例而言,一圍繞該連接器之下部部分之頸圈。在其他實施例中,該第一組件為環形,其形成該連接器中之整個側面並完全環繞該等側面之第二組件。該裝置之實施例亦包含複合支柱。該等複合支柱包含一第一組件及一第二組件,其中該第一組件包含一填充材料。在某些實施例中,該第一組件之至少一部分設置於該支柱之周邊上。所揭示裝置之實施例較使用非複合連接器之類似裝置更易於製作。舉例而言,在某些實施例中,該填充材料係在旋塗製程中塗覆。在某些實施例中,該填充材料在該裝置上提供一表面,在該表面上較在無填充材料之等價裝置上更易於形成一由預定材料形成之層。
在圖1中顯示一種包含一干涉式MEMS顯示元件之干涉式調變器顯示器實施例。在該等裝置中,像素處於亮或暗狀態。在亮(「開(on)」或「打開(open)」)狀態下,顯示元件將入射可見光之一大部分反射至使用者。在處於暗(「斷開(off)」或「關閉(closed)」)狀態下時,顯示元件幾乎不向使用者反射入射可見光。視實施例而定,可顛倒「on」及「off」狀態之光反射性質。MEMS像素可組態為主要以所選色彩反射,以除黑色和白色之外還可實現彩色顯示。
圖1為一等軸圖,其顯示一視覺顯示器之一系列像素中之兩個相鄰像素,其中每一像素包含一MEMS干涉式調變器。在某些實施例中,一干涉式調變器顯示器包含一由該等干涉式調變器構成之列/行陣列。每一干涉式調變器包括一對反射層,該對反射層定位成彼此相距一可變且可控之距離,以形成一至少具有一個可變尺寸之光學諧振空腔。在一實施例中,其中一個反射層可在兩個位置之間移動。在本文中稱為鬆弛位置之第一位置上,該可移動層之位置距離一固定部分反射層相對遠。在本文中稱作受激勵位置之第二位置上,該可移動反射層之位置更緊密地鄰近該部分反射層。根據可移動反射層之位置而定,從這兩個層反射之入射光會以相長或相消方式干涉,從而形成各像素之總體反射或非反射狀態。
圖1中所描繪之像素陣列部分包括兩個毗鄰之干涉式調變器12a和12b。在左側之干涉式調變器12a中,顯示一可移動的高度反射層14a處於一鬆弛位置,該鬆弛位置距一光學疊層16a一預定距離,該光學疊層16a包含一部分反射層。在右側之干涉式調變器12b中,顯示可移動之反射層14b處於一受激勵位置處,該受激勵位置毗鄰光學疊層16b。
本文中所提及之光學疊層16a及16b(統稱作光學疊層16)通常由數個熔合層構成,該等熔合層可包括一電極層(例如氧化銦錫(ITO))、一部分反射層(例如鉻)及一透明介電質。因而,光學疊層16為導電性、部分透明並部分為反射性,並可(舉例而言)藉由於一透明基板20上沉積一或多個上述層來製成。在某些實施例中,該等層被圖案化成平行條帶,且可形成一顯示裝置中之列電極,如將在下文中所進一步說明。可移動反射層14a、14b可形成為由沉積於支柱18頂部的一或多個沉積金屬層(與列電極16a、16b正交)及一沉積於各支柱18之間的中間犧牲材料構成的一系列平行條帶。在蝕刻掉犧牲材料後,該等可移動反射層14a、14b與光學疊層16a、16b藉由一規定之氣隙19隔開。該等反射層14可使用一具有高度導電性及反射性之材料(例如鋁),且該等條帶可形成一顯示裝置中之行電極。
在未施加電壓時,空腔19保持位於可移動反射層14a與光學疊層16a之間,且可移動反射層14a處於如圖1中像素12a所示之機械鬆弛狀態。然而,在向一所選列和行施加電位差之後,在該列和行電極相交處之對應像素處形成的電容器被充電,且靜電力將該等電極拉向一起。若電壓足夠高,則可移動反射層14會變形並被壓抵光學疊層16。光學疊層16內之介電層(在該圖中未顯示)可防止短路並控制層14與16之間之間隔距離,如圖1中右側之像素12b所示。無論所施加之電位差極性如何,該列均相同。由此可見,可控制反射與非反射像素狀態之列/行激勵與習知LCD及其他顯示技術中所用之列/行激勵在許多方面相似。
圖2至圖5顯示一個在顯示器應用中使用一干涉式調變器陣列之實例性過程及系統。
圖2為一系統方塊圖,該圖顯示一可含有本發明各個態樣之電子裝置之一實施例。在該實例性實施例中,該電子裝置包括一處理器21,該處理器可為任何通用單晶片或多晶片微處理器,例如ARM、Pentium、Pentium II、Pentium III、Pentium IV、PentiumPro、8051、MIPS、Power PC、ALPHA,或任何專用微處理器,例如數位信號處理器、微控制器或可程式化閘陣列。按照業內慣例,可將處理器21組態成執行一或多個軟體模組。除執行一個作業系統外,還可將該處理器組態成執行一或多個軟體應用程式,包括網頁瀏覽器、電話應用程式、電子郵件程式或任何其他軟體應用程式。
在一實施例中,處理器21還被組態成與一陣列驅動器22通信。在一實施例中,該陣列驅動器22包括向一面板或顯示陣列(顯示器)30提供信號之列驅動電路24及行驅動電路26。圖1中所示陣列之剖面圖在圖2中以線1-1示出。對於MEMS干涉式調變器,該列/行激勵協定可利用圖3所示該等裝置之滯後性質。其可能需要(例如)一10伏之電位差來致使一可移動層自鬆弛狀態變形至受激勵狀態。然而,當該電壓自該值降低時,在該電壓降低回至10伏以下時,該可移動層將保持其狀態。在圖3之實例性實施例中,在電壓降低至2伏以下之前,可移動層不會完全鬆弛。因此,在圖3所示之實例中,存在一大約為3-7伏之電壓範圍,在該電壓範圍內存在一施加電壓窗口,在該窗口內該裝置穩定在鬆弛或受激勵狀態。在本文中將其稱為「滯後窗口」或「穩定窗口」。對於一具有圖3所示滯後特性之顯示陣列而言,列/行激勵協定可設計成在列選通期間,向所選通列中將被激勵之像素施加一約10伏之電壓差,並向將被鬆弛之像素施加一接近0伏之電壓差。在選通之後,向像素施加一約5伏之穩態電壓差,以使其保持在列選通使其所處之任何狀態。在此實例中,在被寫入之後,每一像素均承受「穩定窗口」內一3-7伏之電位差。該特性使圖1所示之像素設計在相同之所施加電壓條件下穩定在一先前存在之激勵狀態或鬆弛狀態。由於干涉調變器之每一像素(無論係處於激勵狀態還係鬆弛狀態)實質上均係一由該固定反射層及移動反射層所構成之電容器,因此,該穩定狀態可保持在一滯後窗口內之電壓下而幾乎不消耗功率。若所施加之電位恒定,則基本上沒有電流流入像素。
在典型應用中,可藉由根據第一列中所期望的一組受激勵像素確定一組行電極而形成一顯示訊框。此後,將一列脈衝施加於第1列之電極,從而激勵與所確定行線對應之像素。此後,改變所確定之一組行電極使其對應於第二列中所期望的一組受激勵像素。此後,將一脈衝施加於第2列之電極,從而根據所確定之行電極來激勵第2列中之相應像素。第1列之像素不受第2列之脈衝的影響,因而保持其在第1列之脈衝期間所設定之狀態。可按順序性方式對整個系列之列重複上述步驟,以形成所述訊框。通常,藉由以某一所期望訊框數/秒之速度連續重複該過程來用新顯示資料再新及/或更新該等訊框。還有很多種用於驅動像素陣列之列及行電極以形成顯示訊框之協定為人們所熟知,且可與本發明一起使用。
圖4及圖5顯示一種用於在圖2所示3x3陣列上形成一顯示訊框之可能的激勵協定。圖4顯示一組可能的列及行電壓位準,其可用於具有圖3所示滯後曲線之像素。在圖4所示實施例中,激勵一像素包括將相應之行設定至-Vb i a s
,並將相應之列設定至+△V,其可分別對應於-5伏及+5伏。鬆弛該像素則係藉由將相應之行設定至+Vb i a s
並將相應之列設定至相同之+△V以在該像素兩端形成一0伏之電位差來實現。在彼等其中列電壓保持0伏之列中,像素穩定於其最初所處之狀態,而與該行係處於+Vb i a s
或處於-Vb i a s
無關。亦如同圖4中所示,應瞭解,可使用極性與上述極性相反的電壓,例如激勵一像素可包括將相應之行設定至+Vb i a s
、並將相應之列設定至-△V。在該實施例中,釋放像素則係藉由將相應之行設定至-Vb i a s
並將相應之列設定至相同之-△V以由此在該像素兩端形成一0伏之電位差來達成。
圖5B為一顯示施加於圖2所示3x3陣列之一系列列信號及行信號之定時圖,其將形成圖5A所示之顯示佈置,其中受激勵像素為非反射性。在寫入圖5A所示訊框之前,像素可處於任何狀態,且在該實例中,所有列均處於0伏,且所有行均處於+5伏。藉助該等所施加之電壓,所有像素皆穩定於其現有之受激勵狀態或鬆弛狀態。
在圖5A之訊框中,像素(1,1)、(1,2)、(2,2)、(3,2)及(3,3)受到激勵。為達成此一效果,在第1列之一「線時間」期間,將第1行及第2行設定為-5伏,並將第3行設定為+5伏。此不會改變任何像素之狀態,因為所有像素均保持處於3-7伏之穩定窗口內。此後,藉由一自0伏上升至5伏然後又下降回至0伏之脈衝來選通第1列。此會激勵像素(1,1)和(1,2)並鬆弛像素(1,3)。列中之其他像素均不受影響。為將第2列設定為所期望狀態,將第2行設定為-5伏,並將第1行及第3行設定為+5伏。此後,施加至第2列之相同選通脈衝將激勵像素(2,2)並鬆弛像素(2,1)和(2,3)。同樣,陣列中之其他像素均不受影響。類似地,藉由將第2行和第3行設定為-5伏,並將第1行設定為+5伏對第3列進行設定。第3列之選通脈衝將第3列像素設定為圖5A所示之狀態。在寫入訊框之後,列電位為0,而行電位可保持在+5或-5伏,且此後顯示將穩定於圖5A所示之佈置。應瞭解,可對由數十或數百個列和行構成之陣列使用相同程序。還應瞭解,用於實施列和行激勵之電壓之定時、順序及位準可在以上所述一般原理內變化很大,且上述實例僅為實例性,任何激勵電壓方法均可與本文所述之系統及方法一起使用。
圖6A及圖6B為顯示一顯示裝置40之另一實施例之系統方塊圖。顯示裝置40可為(例如)一蜂巢式電話或行動電話。然而,顯示裝置40之相同組件或其稍作變化之形式亦可闡釋不同類型之顯示裝置,例如電視或可攜式媒體播放器。
顯示裝置40包括一外殼41、一顯示陣列30、一天線43、一
揚聲器45、一輸入裝置48及一麥克風46。外殼41通常由熟習此項技術者所熟知之許多種製造製程中之任何一種製成,包括注射成型及真空成形。另外,外殼41可由許多種材料中之任何一種製成,包括但不限於塑膠、金屬、玻璃、橡膠及陶瓷,或其一組合。在一實施例中,外殼41包括可與其他具有不同色彩或包含不同標誌、圖片或符號之可移動部分互換之可移動部分(未示出)。
實例性顯示裝置40之顯示陣列30可為許多種顯示器中之任何一種,包括如本文中所述之雙穩顯示器。在其他實施例中,如熟習此項技術者所習知,顯示陣列30包括一平板顯示器,例如如上所述之電漿顯示器、EL、OLED、STN LCD或TFT LCD,或一非平板顯示器,例如CRT或其他顯像管裝置。然而,為闡釋本發明之目的,顯示陣列30包括一如上所述的干涉式調變器顯示器。
在圖6B中示意性地顯示實例性顯示裝置40之一實施例之組件。所闡釋之實例性顯示裝置40包括一外殼41且可包括其他至少部分地封閉在外殼41內之組件。例如,在一實施例中,實例性顯示裝置40包括一網路介面27,該網路介面27包括一耦接至一收發器47之天線43。收發器47連接至處理器21,處理器21又連接至調節硬體52。調節硬體52可經組態以調節一信號(例如,濾波一信號)。調節硬體52連接至一揚聲器45及一麥克風46。處理器21還連接至一輸入裝置48及一驅動控制器29。驅動控制器29耦接至一訊框緩衝器28並耦接至陣列驅動器22,陣列驅動器22又耦接至一顯示陣列30。一電源50根據該特定實例性顯示裝置40之設計要求向所有組件供電。
網路介面27包括天線43及收發器47,以使實例性顯示裝置40可藉由網路與一或多個裝置通信。在一實施例中,網路介面27還可具有某些處理功能,以降低對處理器21之要求。天線43為業內技術人員習知之任一種用於發射和接收信號之天線。在一實施例中,該天線根據IEEE 802.11標準(包括IEEE 802.11(a)、(b),或(g))來發射及接收RF信號。在另一實施例中,該天線根據藍芽(BLUETOOTH)標準來發射及接收RF信號。倘若為蜂巢式電話,則該天線被設計成接收CDMA、GSM、AMPS或其他用於在無線行動電話網路中進行通信之習知信號。收發器47預處理自天線43接收的信號,以使其可由處理器21接收及進一步調處。收發器47遠處理自處理器21接收之信號,以使其可藉由天線43自實例性顯示裝置40發射。
在一替代實施例中,收發器47可由一接收器替代。在又一替代實施例中,網路介面27可由一影像源替代,該影像源可儲存或產生欲發送至處理器21之影像資料。例如,該影像源可為一數位音影光碟(DVD)或一包含影像資料之硬碟驅動器、或一產生影像資料之軟體模組。
處理器21通常控制實例性顯示裝置40之整體運作。處理器21自網路介面27或一影像源接收資料,例如經壓縮之影像資料,並將該資料處理成原始影像資料或一種易於處理成原始影像資料之格式。此後,處理器21將經處理之資料發送至驅動控制器29或訊框緩衝器28進行儲存。原始資料通常係指識別一影像內每一位置處影像特徵之資訊。例如,該等影像特徵可包括色彩、飽和度及灰度階。
在一實施例中,處理器21包括一微控制器、CPU或邏輯單元,以控制實例性顯示裝置40之運作。調節硬體52通常包括用於向揚聲器45發送信號及從麥克風46接收信號之放大器及濾波器。調節硬體52可為實例性顯示裝置40內之離散組件,或者可倂入處理器21或其他組件內。
驅動控制器29直接自處理器21或自訊框緩衝器28接收由處理器21產生之原始影像資料,並將原始影像資料適當地重新格式化,以高速傳輸至陣列驅動器22。具體而言,驅動控制器29將原始影像資料重新格式化為一具有一光柵樣格式之資料流,以使其具有一適用於掃描整個顯示陣列30之時間次序。此後,驅動控制器29將經格式化之資訊發送至陣列驅動器22。儘管一驅動控制器29(例如一LCD控制器)通常係作為一獨立的積體電路(IC)與系統處理器21相關聯,但可按許多方式構建該等控制器。其可作為硬體嵌入於處理器21中、作為軟體嵌入於處理器21中或以硬體形式與陣列驅動器22一起完全整合在硬體內。
通常,陣列驅動器22自驅動控制器29接收經格式化之資訊並將視頻資料重新格式化成一組平行波形,該組平行波形可每秒多次地施加至來自顯示器中x-y像素陣列之數百條且有時數千條引線上。
在一實施例中,驅動控制器29、陣列驅動器22及顯示陣列30適用於本文所述的任一類型之顯示器。舉例而言,在一實施例中,驅動控制器29係一習知之顯示控制器或一雙穩顯示控制器(例如一干涉式調變器控制器)。在另一實施例中,陣列驅動器22為一習用驅動器或一雙穩顯示驅動器(例如一干涉式調變器顯示器)。在一實施例中,一驅動控制器29與陣列驅動器22整合在一起。這種實施例在例如蜂巢式電話、手錶及其他小面積顯示器等高度整合之系統中很常見。在又一實施例中,顯示陣列30係一典型的顯示陣列或一雙穩顯示陣列(例如一包含一干涉式調變器陣列之顯示器)。
輸入裝置48使使用者能夠控制實例性顯示裝置40之運作。在一實施例中,輸入裝置48包括一小鍵台(例如一QWERTY鍵盤或一電話小鍵台)、一按鈕、一開關、一觸敏螢幕、一壓敏或熱敏薄膜。在一實施例中,麥克風46為實例性顯示裝置40之一輸入裝置。在使用麥克風46向裝置輸入資料時,可由使用者提供語音命令來控制實例性顯示裝置40之運作。
電源50可包括眾多種能量儲存裝置,此在所屬領域中眾所習知。例如,在一實施例中,電源50係一可再充電式蓄電池,例如鎳-鎘蓄電池或鋰離子蓄電池。在另一實施例中,電源50為一可再生能源、電容器或太陽能電池,包括一塑膠太陽能電池及太陽能電池塗料。在另一實施例中,電源50組態成從牆壁上之插座接收電力。
在某些實施方案中,如上所述,控制可程式化性駐存於一可位於電子顯示系統中多個位置內之驅動控制器中。在某些情況下,控制可程式化性駐存於陣列驅動器22中。熟習此項技術者將知,可在任意數量之硬體及/或軟體組件中及在不同之組態中實施上述最佳化。
按照上述原理運作之干涉式調變器之詳細結構可千變萬化。舉例而言,圖7A-圖7E顯示可移動反射層14及其支撐結構之五個不同實施例。圖7A為圖1所示實施例之剖面圖,其中在正交延伸之支撐件18上沉積一金屬材料條帶14。在圖7B中,可移動反射層14僅在角落處附裝至繫鏈32上之支撐件。在圖7C中,可移動反射層14懸置於一可變形層34上,可變形層34可包含一撓性金屬。可變形層34圍繞可變形層34之周邊直接或間接地連接至基板20。在本文中,該等連接稱作支柱18。圖7D中所示實施例具有包含支柱栓42之支柱18,可變形層34即位於支柱栓42上。可移動反射層14仍懸置於空腔上方,如在圖7A-圖7C中所示,但可變形層34不藉由填充可變形層34與光學疊層16之間的孔而形成支柱。而是,該等支柱18係由一用於形成支柱栓42之平面化材料形成。圖7E中所示實施例係基於圖7D中所示實施例,但亦可經修改以與圖7A-圖7C中所示之任一實施例以及其他未顯示之實施例一同使用。在圖7E所示實施例中,已使用額外的一層金屬或其他導電材料來形成一匯流排結構44。此使信號能夠沿干涉式調變器之背面投送,從而消除了若干原本可能須形成於基板20上之電極。
在例如圖7中所示之實施例中,干涉式調變器用作直視式裝置,其中自透明基板20之正面-即與上面佈置有調變器之面相對之面-觀看影像。在該等實施例中,反射層14在光學上屏蔽了干涉式調變器中位於與基板20相對置的該反射層側上的某些部分,包括可變形層34及匯流排結構44。此使得能夠在不會不利地影響影像品質之情況下對被屏蔽區域加以構造及操作。此種可分離之調變器架構使調變器之結構設計以及用於調變器之機電態樣及光學態樣之材料能夠相互獨立地加以選擇及起作用。此外,因使反射層14之光學性質與其機械性質(由可變形層34執行)相分離,圖7C-圖7E所述實施例具有額外之優點。此使反射層14之結構設計及所用材料能夠在光學特性方面得到最佳化,且可變形層34之結構設計和所用材料能夠在所期望機械特性方面得到最佳化。
下文所述MEMS裝置、結構、方法及系統係光學調變器。如熟習此項技術者所易知,本文之教示內容亦可適用於其他類型之MEMS裝置。熟習此項技術者亦將瞭解,該等教示內容亦可適用於其他類型之光學調變器,舉例而言,如上文所述及在圖7A-圖7E中所示之光學調變器。
圖8A以剖面圖形式顯示一類似於圖7D所示裝置之光學調變器800之一實施例。光學調變器800包括一基板810、一光學疊層820、一可移動鏡面840、一可變形層870及複數個支柱890。該等支柱890一同形成一支撐結構。在其中MEMS裝置並非係光學調變器之實施例中,光學疊層820係可選的。在某些實施例中,可移動鏡面840之至少一部分為導電性。某些其中該MEMS裝置並非係光學調變器之實施例包含一並不含有反射表面之可移動鏡面。在該等實施例中,該可移動鏡面稱作一「可移動導體」。將可移動鏡面840緊固至可變形層870者係一複合連接器872,其包含一第一組件874及一第二組件876。在某些實施例中,該連接器之第一組件874包含一填充材料而第二部分876包含另一材料。在某些較佳實施例中,該填充材料係一旋塗材料及/或自平坦化材料。該填充材料將於下文中予以更詳細論述。在某些實施例中,第一組件874或第二組件876中之至少一者為導電性。關於複合連接器872之結構之詳情將在下文中予以論述。在其他實施例中,光學調變器800包含複數個連接器872。在所示實施例中,支柱890包含含有一填充材料之支柱栓892。
圖8B係一光學調變器800之一實施例之俯視圖。圖8A所示之剖面由剖面8A-8A表示。圖8B顯示可變形層870、支柱890、可移動鏡面840及複合連接器872。在所示實施例中’複合連接器872基板為圓形。在其他實施例中,複合連接器872具有另一種形狀,舉例而言,正方形、矩形、六邊形、橢圓形或其他規則及不規則之形狀。如上文所述,複合連接器872包含一第一組件874及一第二組件876。返回圖8A,在所示實施例中,第一組件874圍繞複合連接器872之周邊設置。在某些實施例中,第一組件874之形狀像一頸圈,其形成複合連接器872之至少一部分之側面。舉例而言,在圖8B所示實施例中,第一組件874係環形並環繞第二組件876之外側壁之至少一部分。在其他實施例中,第一組件874包含一或多個部分,該一或多個部分並不環繞或形成一圍繞連接器872中任一部分之整個周邊,舉例而言,如在圖8C及圖8D所示俯視圖中所示。在圖8A所示實施例中,第一組件874形成連接器872之各側之所有部分,從而基本上覆蓋第二組件876之整個外側壁。在其他實施例中,第一組件874並不完全覆蓋第二組件876之各側面。舉例而言,圖8E顯示一包含一第一組件874之連接器872之剖面圖,該第一組件874形成連接器872之下部部分之側面但不形成上部部分之側面。在所示實施例中,第一組件874接觸鏡面840,但並不延伸至連接器872之整個高度。
返回圖8A,在所示實施例中,該複合連接器之第二組件876與可變形層870整合成一體並將鏡面840緊固至可變形層870。如圖所示,第二組件876嵌套於第一組件874內,形成一中空的凹結構。第二組件876之底部接觸導電鏡面840,從而形成一電連接,電信號可藉由該電連接發送至鏡面840,如上文所述。由於在所示實施例中第二組件876與可變形層870整合成一體,因而該兩個結構包含相同之材料。下文將參照圖8F-圖8M來說明一種製造圖8A所示裝置之方法。如下文所述,在其他實施例中,該第二組件不與可變形層870整合成一體,並具有一與可變形層870不同之形狀及/或包含不同於可變形層870之材料。
圖9A以剖面圖形式顯示一干涉式調變器900之另一實施例,干涉式調變器900包含一基板910、一光學疊層920、一可移動鏡面940、一可變形層970及複數個支柱990。一複合連接器972將可移動鏡面940緊固至可變形層970。在所示實施例中,複合連接器972包含一環形第一組件974,該環形第一組件974形成複合連接器972之各側面。一第二組件976在連接器972中形成一芯體。在所示實施例中,第二組件976基本上由第一組件974、可移動導體940及可變形層970完全包圍。在某些實施例中,第一組件974與第二組件976中之至少一者為導電性,藉此電連接可移動導體940與可變形層970,如上文所述。下文將參照圖9B-圖9F來說明一種製造圖9A所示裝置之實施例之方法。
圖10A以剖面圖形式顯示一干涉式調變器1000之一實施例,該干涉式調變器1000包含一基板1010、一光學疊層1020、一可移動鏡面1040、一可變形層1070及複數個支柱1090。所示實施例包含一包含一第一組件1074及一第二組件1076之複合連接器1072。複合連接器1072類似於在圖8A中所示及在上文中所述之複合連接器872。在其他實施例中,該連接器不為複合連接器,舉例而言,類似於連接器36(圖7D)。在所示實施例中,支柱1090為複合支柱,包含一第一組件1094及一第二組件1096。在所示實施例中,第一組件1094圍繞複合支柱1090之周邊設置。在某些較佳實施例中,第一組件1094為環形,環繞支柱中第二組件1096之下部部分之至少各側面,舉例而言,如圖10B所示。在某些較佳實施例中,第一組件1094基本上完全環繞第二組件1096之各側面,從而形成支柱1090之側面,如圖10A所示。在其他實施例中,第一組件1094包含一或多個部分,該一或多個部分並不圍繞第二組件1096形成一封閉結構。
圖11係一流程圖,其參照圖8A所示干涉式調變器800及圖8F-圖8M來顯示一種製作一MEMS裝置之方法之一實施例,其中圖8F-圖8M顯示該方法中之中間結構。
在步驟1110中,在基板810上形成一光學疊層820。在某些實施例中,光學疊層820包含一電極層822、一部分反射層824及一介電層826,如圖8F所示。在所示實施例中,電極層822及部分反射層824形成於基板820上並經圖案化以開製出支撐區域,在某些較佳實施例中,該等支撐區域界定下部電極列(未圖示)。然後,於其上形成介電層826。
在步驟1120中,如圖8G所示,於光學疊層820上形成一第一犧牲層830。第一犧牲層830包含一第一犧牲材料。適宜之犧牲材料在此項技術中眾所習知,舉例而言,無機犧牲材料及有機犧牲材料。適宜之無機犧牲材料之實例包括矽、鈦、鋯、鉿、釩、鉭、鈮、鉬及鎢。適宜之有機材料之實例包括抗蝕劑及光阻劑。第一犧牲層830係藉由此項技術中所習知之方法形成,該等方法相依於所選之特定犧牲材料並包括旋塗、物理氣體沉積(PVD)、濺射、化學氣體沉積(CVD)、原子層沉積(ALD)及其變型形式。通常,在已完成之裝置中,該第一犧牲材料可相對於其他暴露至蝕刻劑之材料受到選擇性蝕刻。在某些較佳實施例中,該第一犧牲材料(舉例而言,鉬、矽或鎢)可使用XeF2
加以蝕刻。
在步驟1130中,於第一犧牲層830上形成一導電層840',如圖8H所示。在其中該裝置係一干涉式調變器之實施例中,該導電層亦稱作一「反射層」或「鏡面層」。在某些實施例中,導電層840'係一複合結構,包含複數個子層,此使得能夠最佳化各種功能,舉例而言,剛度、質量、抗化學性、抗蝕刻性及/或反射率。舉例而言,在某些實施例中,反射層包含(舉例而言)一含有鋁、鈦、鉻、銀、及/或金之反射表面子層。用於形成導電層840'之方法為此項技術所習知,舉例而言,PVD、CVD、ALD及其變型形式。
在步驟1140中,將導電層840'圖案化,以形成一可移動導體840,如圖8I所示。如上文所述,在其中該裝置係一干涉式調變器之實施例中,可移動導體840係一可移動鏡面。在所示實施例中,在該步驟中未將第一犧牲層830圖案化。在其他實施例中,將第一犧牲層830圖案化以在第一犧牲材料中毗鄰可移動導體840形成一或多個開口。
在步驟1150中,於可移動導體840及第一犧牲層830之外露部分上形成一第二犧牲層850,藉以提供圖8J所示之結構。第二犧牲層850包含一第二犧牲材料,該第二犧牲材料係獨立地選自上文所述適合用於第一犧牲材料的同一材料群組中,並使用此項技術中所習知之方法形成。在某些較佳實施例中,第一與第二犧牲材料可由同一蝕刻劑來選擇性地蝕刻,藉以允許在單次釋放蝕刻中同時移除第一犧牲層830與第二犧牲層850二者,如下文所更詳細說明。
在步驟1160中,藉由此項技術中所習知之方法,舉例而言,藉由光刻圖案化,於第二犧牲層850上形成一遮罩(未圖示)。使用此項技術中所習知之方法(舉例而言,藉由遮罩實施蝕刻)形成第二犧牲層850中之一或多個第一開口866,以提供圖8K所示之結構。在所示實施例中,第二犧牲層中之第一開口866基本上居中於可移動導體840上,可移動導體840形成第一開口866之底部之至少一部分。其他實施例包含複數個第一開口866。所示實施例亦包含穿過第一犧牲層830及第二犧牲層850並毗鄰可移動導體840之第二開口852。在某些實施例中,係於同一步驟中形成該第一開口866及該(該等)第二開口852。在其他實施例中,則係分別於單獨之步驟中形成該第一開口866及該(該等)第二開口852。
在步驟1170中,於第二犧牲材料中之第一開口866中自一填充材料形成複合連接器(圖8A中之872)之第一組件874,以提供圖8L所示之結構。在所示實施例中,該填充材料,因而該第一組件874,基本上覆蓋該第一開口(圖8K)之側壁868,但不完全覆蓋第一開口866之底部869。在某些實施例中,該填充材料並不完全覆蓋第一開口之側壁868,換言之,填充材料之厚度小於開口866之高度,藉以提供(舉例而言)圖8E中所示之第一組件874。返回圖8L,該填充材料亦基本上填充該(該等)開口852,以形成支柱栓892。在所示實施例中,該複合連接器之第一組件874及該等支柱栓892包含相同之填充材料。熟習此項技術者將瞭解,該複合連接器之第一組件874及該等支柱栓892不包含相同之填充材料。如下文所更詳細論述,在某些較佳實施例中,在一旋塗製程中沉積該填充材料。
本文中所用術語「填充材料」係指一種如下材料:(1)其藉由在製作裝置過程中填充一臺階、凸緣及/或斷續點而提供一上面可形成另一具有預定性質(舉例而言,黏附力、厚度、實體完整性及/或電氣完整性)之層之表面;及/或(2)其填充一開口以提供一在完工裝置中具有預定性質之組件。該等預定性質之實例包括,舉例而言,黏附力、實體完整性及/或導電率。在本文所述之某些實施例中,該填充材料同時執行該兩種功能。在某些實施例中,該填充材料執行額外之功能。適宜之填充材料為此項技術所習知。熟習此項技術者將瞭解,對適當填充材料之選擇相依於若干因素,包括特定應用、所用之特定材料、以及填充材料之特定功能。
熟習此項技術者將瞭解,在某些情形中,在某些基板上形成具有所期望性質之層相當困難。舉例而言,在圖8L所示結構上形成一可變形層1270可在圖12A所示之可變形層1270中造成非均勻部分,舉例而言,斷點1278或薄的部分1280。在所示實施例中,該等非均勻部分形成於下伏層中之斷續點周圍。在所示實施例中,該等斷續點包括一表面與一開口1282之間之過渡、一開口之壁與一開口1284之底部之間之過渡及凹入區域1286。熟習此項技術者將瞭解,某些類型之層亦難以形成於其他類型之形體上,舉例而言,陡峭之表面、粗糙之表面及/或不規則之表面上。
參照圖12A,在某些實施例中,該填充材料利於藉由填充或覆蓋此一基板中至少某些斷續點而在基板上形成一層。在某些實施例中,連接器及/或支柱1290之第一組件1274之填充材料形成一大於0°(即非凹入)、更佳為大於約10°之接觸角θ,如圖12B所示。
在某些較佳實施例中,該填充材料包含一自平坦化材料,舉例而言,抗蝕劑、光阻劑、旋塗玻璃(SOG)或旋塗介電質(SOD)。在其他實施例中,該填充材料包含另一種材料,舉例而言,一平面化材料、聚合物及/或一敷形塗層。本文中所用術語「自平坦化」係以其通常之含意使用,具體而言,係指如下材料:其在塗覆至一表面上時,趨於填充及/或覆蓋該表面上之開口、不規則部分、及/或形體,藉以提供一更平滑之外露表面。熟習此項技術者將瞭解,由自平坦化材料形成之表面未必界定一平面。適宜之光阻劑包括正性抗蝕劑及負性抗蝕劑,包括環氧樹脂、聚醯亞胺、聚丙烯酸酯、i-line、g-line、193奈米、深UV及/或厚膜光阻劑。實例性之市售光阻劑包括SU-8(MicroChem,Inc.,Newton,MA)、SPR3600(Shipley,Marlborough,MA)、SPR995-CM(Shipley)、Ultra-i-123(Shipley)、AZ-9200(Clariant,Muttenz,Switzerland)、P4000(Clariant)、AZ MiR 700(Clariant)、AZ 7900(Clariant)、AZ5200(Clariant)、AZ DX(Clariant)及NR-7(Futurex)。用於塗覆自平坦化材料之方法在此項技術中眾所習知,舉例而言,旋塗方法。在某些實施例中,對光阻劑實施光圖案化。在某些實施例中,藉由穿過基板810(即在圖8A中看時自裝置800之底部)實施輻照對光阻劑實施光圖案化。在某些實施例中,在圖8A中看時,輻照係來自裝置800之上方。在某些實施例中,係自兩側對光阻劑實施輻照。在某些實施例中,將一第二光阻劑塗覆至該填充材料並將其光圖案化,以便將該填充材料圖案化。
該自平坦化材料之性質藉由此項技術中所習知之方法來控制。舉例而言,在塗覆一旋塗材料時,包括旋轉速度及稀釋度在內之因素會影響旋塗材料膜之厚度以及其形體之高度。在某些實施例中,旋轉速度會影響第一組件(圖8L)之唇緣878之厚度同時在開口中維持一更薄之抗蝕劑層。其他影響該自平坦化材料之性質之因素包括烘焙歷史,舉例而言,在光圖案化之前及之後的烘焙歷史。舉例而言,烘焙往往會使光阻劑收縮。某些實施例包括一電漿清理步驟。烘焙歷史及電漿清理二者皆影響光阻劑之外形及高度。在某些實施例中,在形成連接器及/或支柱(分別為874及892)之第一組件後,電漿清理會自第一開口866及/或第二開口852移除抗蝕劑。如上文所述,在所揭示的其中連接器之第一組件874不為導電性的裝置之某些實施例中,露出第一開口866之底部869上之可移動導體840頗為有用。在某些實施例中,電漿清理亦會提高沉積於自平坦化材料上之層(舉例而言,第一組件874)之黏附力-可能係藉由使抗蝕劑之表面粗糙化。
其他適宜之填充材料包括此項技術中所習知之任一類型之介電材料,舉例而言,金屬氧化物、氮化物及/或碳化物。適宜之介電材料之實例包括氧化矽、氮化矽、碳化矽、氟化石英玻璃、有機矽酸鹽玻璃、氧化鋁及其組合。此項技術中所習知之其他介電質亦適用。另一種適宜之填充材料係金屬,舉例而言,鋁、銅、金、鎢、鎳、鈦及類似金屬,及其合金或混合物。另一種適宜之填充材料係矽-磊晶矽、多晶矽、或非晶矽。用於沉積此等填充材料之方法在此項技術中眾所習知,舉例而言,CVD、PVD、ALD、電鍍、揮發、濺射及剝離。一種用於沉積填充材料之較佳方法係旋塗,該種方法會減少或消除方向性或「間隙壁」蝕刻之需要,以在第一開口866之底部869處露出可移動導體或鏡面840(圖8L)。
在步驟1180中,使用此項技術中所習知之方法在圖8L所示之結構上形成可變形層870,以提供圖8M所示之結構。在所示實施例中,連接器之第二組件876係與可變形層870成一體地形成。
在步驟1190中,移除及/或蝕刻掉第一犧牲層830及第二犧牲層850,以在可移動導體或鏡面840上方及下方開製出空腔,以提供圖8A所示之結構。在某些實施例中,在一犧牲性或「釋放蝕刻」中移除第一犧牲層830及第二犧牲層850。第一犧牲層830與第二犧牲層850係分別在單獨之製程中移除或在單一製程中移除。熟習此項技術者將瞭解,具體蝕刻條件相依於第一及第二犧牲材料之同一性。在某些實施例中,相對於裝置中之其他結構(舉例而言,圖8A所示之該等結構)選擇性地移除該等犧牲材料中之一者或二者。在某些較佳實施例中,第一與第二犧牲材料中之一者或二者皆可使用一氣相蝕刻劑(例如XeF2
)來選擇性地蝕刻。
方法1100亦適用於製作圖9A所示之MEMS裝置。步驟1110-1150基本上如上文所述及如圖8F-圖8J所示。在步驟1160中,在一第二犧牲層950及第一犧牲層930中形成至少一個第一開口966及一或多個第二開口952,以提供圖9B所示之結構。自頂部看去(圖9C),第一開口966為環形,其界定第二犧牲層之一部分976,該第二犧牲層形成連接器972(圖9A)之第二組件。舉例而言,在某些實施例中,第一開口966為一圓形,如圖9C所示。在其他實施例中,第一開口966具有另一形狀,舉例而言,正方形、矩形、六邊形、橢圓形或另一形狀。在某些實施例中,第一開口966不為環形。在該等實施例中之某些實施例中,在步驟1190中,上述釋放蝕刻會蝕刻掉第二犧牲層之部分976。在該等實施例中之某些實施例中,連接器之第一組件974將可移動導體940電連接至可變形層970(圖9A),因此該填充材料導電。
在步驟1170中,自一填充材料形成連接器之第一組件974,以提供圖9D所示之結構。在所示實施例中,填充材料基本上填充第二犧牲層950中之第一開口966,以形成第一組件974。在其他實施例中,該填充材料並不基本上填充第一開口966,藉此提供(舉例而言)一如圖9E所示之第一組件974。返回圖9D,在所示實施例中,如上文所述,在該步驟中亦形成支撐栓柱992。該填充材料及塗覆方法基本上如上文所述。
在步驟1180中,如上文所述形成可變形層1070,以提供圖9F中所示之結構。在步驟1190中,如上文所述移除第一犧牲層830及第二犧牲層850,以提供圖9A所示之結構。在圖9F中可最佳地看出,在其中連接器之第一組件974形成一封閉形狀之實施例中,可移動鏡面940、可變形層970及連接器之第一組件974一同包圍一由第二犧牲材料形成之件976,藉以防止其蝕刻並形成連接器之第二組件976。
如上文所述,在某些實施例中,第一組件974與第二組件976中之至少一者為導電性。在某些較佳實施例中,第二組件976包含一導電的犧牲材料,舉例而言,鉬或鎢。
方法1100亦提供一種製作圖10A所示裝置之方法。步驟1110-1160基本上如上文所述及在圖8F-圖8K中所示。在步驟1170中,如上文所述自一填充材料同時形成支柱之第一組件1094及連接器之第一組件1074,以提供如10C所示之結構。在步驟1180中,形成一可變形層1070,該可變形層1070形成支柱之第二組件1096(如圖10D所示)以及連接器之第二組件1076。在步驟1190中,移除第一犧牲層1030及第二犧牲層1050,以形成圖10A所示之結構。
熟習此項技術者應瞭解,可對上文所述裝置及製造製程加以改變,例如添加及/或除去某些組件及/或步驟、及/或改變其次序。此外,本文所述方法、結構及系統亦適用於製作其他電子裝置,包括其他類型之MEMS裝置,例如其他類型之光學調變器。
此外,儘管上文詳細說明係顯示、說明及指出適用於各種實施例之本發明新穎特徵,然而應瞭解,熟習此項技術者可在形式及細節上對所示裝置或製程做出各種省略、替代及改變,此並不背離本發明之精神。應知道,由於可獨立於其他特徵使用或實踐某些特徵,因而可在一並不提供本文所述所有特徵及優點之形式內實施本發明。
12a...干涉式調變器
12b...干涉式調變器
14...反射層
14a...可移動反射層
14b...可移動反射層
16...光學疊層
16a...光學疊層
16b...光學疊層
18...支撐件
19...氣隙
20...基板
21...處理器
22...陣列驅動器
24...列驅動電路
26...行驅動電路
27...網路介面
28...訊框緩衝器
29...驅動控制器
30...顯示陣列
32...繫鏈
34...可變形層
40...顯示裝置
41...外殼
42...支柱栓
43...天線
44...匯流排結構
45...揚聲器
46...麥克風
47...收發器
48...輸入裝置
50...電源
52...調節硬體
800...光學調變器
810...基板
820...光學疊層
822...電極層
824...部分反射層
826...介電層
830...第一犧牲層
840...可移動鏡面
840'...導電層
850...第二犧牲層
852...第二開口
866...第一開口
868...側壁
869...底部
870...可變形層
872...複合連接器
874...第一組件
876...第二組件
878...唇緣
890...支柱
892...支柱栓
900...干涉式調變器
910...基板
920...光學疊層
930...第一犧牲層
940...可移動導體(可移動鏡面)
950...第二犧牲層
952...第二開口
966...第一開口
970...可變形層
972...連接器
974...第一組件
976...第二組件
990...支柱
992...支撐栓柱
1000...干涉式調變器
1010...基板
1020...光學疊層
1030...第一犧牲層
1040...可移動鏡面
1050...第二犧牲層
1070...可變形層
1072...複合連接器
1074...第一組件
1076...第二組件
1090...支柱
1094...第一組件
1096...第二組件
1270...可變形層
1274...第一組件
1278...斷點
1280...薄的部分
1282...開口
1284...開口
1286...凹入區域
1290...支柱
根據上文說明及附圖(未按比例繪製)將易知本發明之該等及其他態樣,該等附圖旨在圖解闡釋而非限定本發明。
圖1為一等軸圖,其顯示一干涉式調變器顯示器之一實施例之一部分,其中一第一干涉式調變器之一可移動反射層處於一鬆弛位置且一第二干涉式調變器之一可移動反射層處於一受激勵位置。
圖2為一系統方塊圖,其顯示一包含一3x3干涉式調變器顯示器之電子裝置之一實施例。
圖3為圖1所示干涉式調變器之一實例性實施例之可移動鏡面位置與所施加電壓之關係圖。
圖4為一組可用於驅動干涉式調變器顯示器之列電壓和行電壓之示意圖。
圖5A顯示在圖2所示之3×3干涉式調變器顯示器中的一個實例性顯示資料訊框。
圖5B顯示可用於寫入圖5A之訊框之列信號及行信號之一實例性定時圖。
圖6A及圖6B為系統方塊圖,其顯示一包含複數個干涉式調變器之視覺顯示裝置之一實施例。
圖7A為一圖1所示裝置之剖面圖。圖7B為一干涉式調變器之一替代實施例之剖面圖。圖7C為一干涉式調變器之另一替代實施例之剖面圖。圖7D為一干涉式調變器之又一替代實施例之剖面圖。圖7E為一干涉式調變器之尚一替代實施例之剖面圖。
圖8A-圖8E顯示一本文所揭示的包含一複合連接器之干涉式調變器之若干實施例。圖8F-圖8M顯示在一製作圖8A所示設備之實施例中之中間結構。
圖9A-圖9F顯示一本文所揭示干涉式調變器之另一實施例及在一製作該干涉式調變器之實施例中之中間結構。
圖10A-圖10D顯示一本文所揭示干涉式調變器之另一實施例及在一製作該干涉式調變器之實施例中之中間結構。
圖11為一流程圖,其顯示一種用於合成本文所揭示干涉式調變器之方法之一實施例。
圖12A顯示一可變形層中之各種缺陷。圖12B顯示填充材料之代表性接觸角度(θ)。
800...光學調變器
810...基板
820...光學疊層
840...可移動鏡面
870...可變形層
872...複合連接器
874...第一組件
876...第二組件
890...支柱
892...支柱栓
Claims (39)
- 一種微機電系統裝置,其包括:一基板;一可變形層;一支撐該可變形層之支撐結構;一定位於該基板與該可變形層之間之可移動導體;及一將該可移動導體緊固至該可變形層之連接器;其中該連接器與該支撐結構中之至少一者包含一第一組件及一第二組件,該第一組件之至少一部分形成於該第二組件之至少一部分之一外側壁上,其中該第一組件係錐形的且具有一寬度,該寬度在遠離該可變形層時較接近該可變形層時大;及該第一組件包含一電絕緣填充材料。
- 如請求項1之微機電系統裝置,其中該支撐結構包含複數個支柱,其中該等支柱由該基板支撐並支撐該可變形層。
- 如請求項1之微機電系統裝置,其中該填充材料包括一自平坦化材料。
- 如請求項1之微機電系統裝置,其中該填充材料包括一種選自由一介電材料、一金屬及矽組成之群組之材料。
- 如請求項1之微機電系統裝置,其中該連接器與該可變形層整合成一體。
- 如請求項1之微機電系統裝置,其中該連接器包含一第一組件及一第二組件,及該第一組件係環形,形成該連接器之至少一部分之各側面。
- 如請求項6之微機電系統裝置,其中該第一組件形成該整個連接器之該等側面。
- 如請求項7之微機電系統裝置,其中該第二組件包含一犧牲材料。
- 如請求項8之微機電系統裝置,其中該犧牲材料包含鉬、矽或其一組合。
- 如請求項1之微機電系統裝置,其中至少一個支柱包含一基本自填充材料形成之支柱栓。
- 如請求項1之微機電系統裝置,其中該微機電系統裝置係一光學調變器。
- 如請求項1之微機電系統裝置,其中:該連接器包含一第一組件,及該第一組件接觸該可移動導體並形成該連接器之下部部分之各側面。
- 如請求項12之微機電系統裝置,其中該第二組件包括一導體。
- 如請求項1之微機電系統裝置,其中該填充材料係一旋塗材料。
- 如請求項1之微機電系統裝置,其進一步包括:一與至少該可移動導體電相通之處理器,該處理器經 組態以處理影像資料;一與該處理器電相通之儲存裝置。
- 如請求項15之微機電系統裝置,其進一步包括:一驅動電路,其經組態以將至少一個信號發送至該顯示器。
- 如請求項16之微機電系統裝置,其進一步包括:一控制器,其經組態以將該影像資料之至少一部分發送至該驅動電路。
- 如請求項15之微機電系統裝置,其進一步包括:一影像源模組,其經組態以將該影像資料發送至該處理器。
- 如請求項18之微機電系統裝置,其中該影像源模組包含一接收器、收發器及發射器中至少之一。
- 如請求項15之微機電系統裝置,其進一步包括:一輸入裝置,其經組態以接收輸入資料並將該輸入資料傳送至該處理器。
- 一種用於製作一光學調變器之方法,其包括:於一基板上形成一由一第一犧牲材料形成之層、一鏡面及一由一第二犧牲材料形成之層;穿過由該第二犧牲材料形成之該層形成一第一開口,藉以在該第一開口之一底部處露出該鏡面;穿過由該第二犧牲材料及該第一犧牲材料形成之該層毗鄰該鏡面形成一第二開口,該第二開口具有一底部;及以一填充材料填充該第一開口及該第二開口中之一者 之各側之至少一部分,以沿著該第一開口及該第二開口中之一者之側壁形成一錐形層而不完全覆蓋該開口之該底部,其中該錐形層具有一寬度,該寬度在該開口之該底部處較遠離該開口之該底部時大。
- 如請求項21之方法,其中該第一開口基本上居中於該鏡面上。
- 如請求項21之方法,其進一步包括:於該填充材料上形成一可變形層。
- 如請求項22之方法,其中以該填充材料基本上完全填充該第二開口。
- 如請求項21之方法,其中該填充包括旋塗該填充材料。
- 如請求項25之方法,其中該填充材料包括一光敏性聚合物。
- 如請求項26之方法,其中該填充材料包括一光阻劑。
- 如請求項25之方法,其中該填充材料包括一旋塗玻璃或一旋塗介電質。
- 如請求項28之方法,其中該填充包括將該填充材料沉積至一小於該開口之一高度之厚度。
- 如請求項21之方法,其中該第一開口係環形。
- 如請求項30之方法,其中以該填充材料基本上填充該第一開口。
- 一種藉由如請求項21-31中任一項之方法製成之干涉式調變器。
- 一種微機電系統裝置,其包括: 一可變形導電層;一可移動導電層;一於該可變形導電層與該可移動導電層之間延伸之導電芯體;及一環繞該導電芯體的由一電絕緣材料形成之錐形層,該電絕緣材料形成於該導電芯體之一外側壁上。
- 如請求項33之微機電系統裝置,其中:該微機電系統裝置係一光學調變器;及該可移動導電層係一鏡面。
- 一種操作一微機電系統裝置之方法,其中該微機電系統裝置包括:一隔室;一可變形導電層;一可移動導電層,其中該可移動導電層可在該隔室中於一第一位置與一第二位置之間移動;一於該可變形導電層與該可移動導電層之間延伸之導電芯體;及一環繞該導電芯體的由一電絕緣材料形成之錐形層,該電絕緣材料形成於該導電芯體之一外側壁上,該方法包括對該可移動導電層施加一第一電壓,該第一電壓足以使該可移動導電層自該第一位置移動至該第二位置。
- 如請求項35之方法,其中該微機電系統裝置係一干涉式調變器,該可移動導電層係一可移動鏡面,其進一步包括一反 射表面,該第一位置係一鬆弛位置,及該第二位置係一受激勵位置。
- 如請求項35之方法,其中該第一電壓約為+5伏特。
- 如請求項35之方法,其進一步包括對該可移動導電層施加一第二電壓,該第二電壓足以使該導電層自該第二位置移動至該第一位置。
- 如請求項38之方法,其中該第二電壓約為-5伏特。
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- 2005-08-22 US US11/208,809 patent/US7684104B2/en not_active Expired - Fee Related
- 2005-09-15 RU RU2007115891/28A patent/RU2007115891A/ru not_active Application Discontinuation
- 2005-09-15 JP JP2007533532A patent/JP4575452B2/ja not_active Expired - Fee Related
- 2005-09-15 WO PCT/US2005/032647 patent/WO2006036542A1/en active Application Filing
- 2005-09-15 DE DE602005027589T patent/DE602005027589D1/de active Active
- 2005-09-15 MX MX2007003600A patent/MX2007003600A/es not_active Application Discontinuation
- 2005-09-15 AT AT05795184T patent/ATE506320T1/de not_active IP Right Cessation
- 2005-09-15 EP EP05795184A patent/EP1805099B1/en not_active Not-in-force
- 2005-09-26 TW TW094133411A patent/TWI422859B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
EP1805099A1 (en) | 2007-07-11 |
JP2008514995A (ja) | 2008-05-08 |
JP4575452B2 (ja) | 2010-11-04 |
WO2006036542A1 (en) | 2006-04-06 |
US20060066936A1 (en) | 2006-03-30 |
DE602005027589D1 (de) | 2011-06-01 |
RU2007115891A (ru) | 2008-11-10 |
ATE506320T1 (de) | 2011-05-15 |
EP1805099B1 (en) | 2011-04-20 |
MX2007003600A (es) | 2007-05-23 |
TW200626957A (en) | 2006-08-01 |
US7684104B2 (en) | 2010-03-23 |
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