TWI421222B - Silica container and method of manufacturing the same - Google Patents
Silica container and method of manufacturing the same Download PDFInfo
- Publication number
- TWI421222B TWI421222B TW099118423A TW99118423A TWI421222B TW I421222 B TWI421222 B TW I421222B TW 099118423 A TW099118423 A TW 099118423A TW 99118423 A TW99118423 A TW 99118423A TW I421222 B TWI421222 B TW I421222B
- Authority
- TW
- Taiwan
- Prior art keywords
- cerium oxide
- ceria
- substrate
- gas
- container
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title description 26
- 239000000377 silicon dioxide Substances 0.000 title description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 252
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 252
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 206
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 206
- 239000000758 substrate Substances 0.000 claims description 150
- 239000007789 gas Substances 0.000 claims description 114
- 239000000843 powder Substances 0.000 claims description 97
- 239000002994 raw material Substances 0.000 claims description 59
- 238000002844 melting Methods 0.000 claims description 52
- 230000008018 melting Effects 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 42
- 229910052799 carbon Inorganic materials 0.000 claims description 38
- 239000011521 glass Substances 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 31
- 230000007547 defect Effects 0.000 claims description 30
- 239000011159 matrix material Substances 0.000 claims description 30
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000000075 oxide glass Substances 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 238000002834 transmittance Methods 0.000 claims description 15
- 230000001603 reducing effect Effects 0.000 claims description 14
- 230000002950 deficient Effects 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052700 potassium Inorganic materials 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000006060 molten glass Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 2
- 238000002309 gasification Methods 0.000 claims 1
- 239000002585 base Substances 0.000 description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 27
- 229910052739 hydrogen Inorganic materials 0.000 description 26
- 239000012535 impurity Substances 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 17
- 230000000694 effects Effects 0.000 description 17
- 239000001257 hydrogen Substances 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 239000002184 metal Substances 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 12
- 229910002091 carbon monoxide Inorganic materials 0.000 description 12
- 238000001035 drying Methods 0.000 description 12
- 239000010453 quartz Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 238000010891 electric arc Methods 0.000 description 8
- 239000010419 fine particle Substances 0.000 description 8
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 8
- 230000002411 adverse Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 206010021143 Hypoxia Diseases 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 230000006837 decompression Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000003405 preventing effect Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910052902 vermiculite Inorganic materials 0.000 description 3
- 239000010455 vermiculite Substances 0.000 description 3
- 235000019354 vermiculite Nutrition 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 cerium tetrachloride Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 159000000021 acetate salts Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- BBLKWSIOIYLDHV-UHFFFAOYSA-J cerium(4+);tetrachloride Chemical compound Cl[Ce](Cl)(Cl)Cl BBLKWSIOIYLDHV-UHFFFAOYSA-J 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- AXTYOFUMVKNMLR-UHFFFAOYSA-N dioxobismuth Chemical compound O=[Bi]=O AXTYOFUMVKNMLR-UHFFFAOYSA-N 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011022 opal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000011240 wet gel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Glass Melting And Manufacturing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009166799A JP4922355B2 (ja) | 2009-07-15 | 2009-07-15 | シリカ容器及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201119958A TW201119958A (en) | 2011-06-16 |
| TWI421222B true TWI421222B (zh) | 2014-01-01 |
Family
ID=43449103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099118423A TWI421222B (zh) | 2009-07-15 | 2010-06-07 | Silica container and method of manufacturing the same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8733127B2 (enExample) |
| EP (1) | EP2455349A1 (enExample) |
| JP (1) | JP4922355B2 (enExample) |
| KR (1) | KR101268483B1 (enExample) |
| CN (1) | CN102197002B (enExample) |
| TW (1) | TWI421222B (enExample) |
| WO (1) | WO2011007491A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8272234B2 (en) * | 2008-12-19 | 2012-09-25 | Heraeus Shin-Etsu America, Inc. | Silica crucible with pure and bubble free inner crucible layer and method of making the same |
| EP2431338B1 (en) * | 2009-04-28 | 2021-08-25 | Shin-Etsu Quartz Products Co., Ltd. | Silica vessel |
| CN102395535B (zh) * | 2009-05-26 | 2014-07-02 | 信越石英株式会社 | 二氧化硅容器及其制造方法 |
| JP4951040B2 (ja) * | 2009-08-05 | 2012-06-13 | 信越石英株式会社 | シリカ容器及びその製造方法 |
| US9003832B2 (en) * | 2009-11-20 | 2015-04-14 | Heraeus Shin-Etsu America, Inc. | Method of making a silica crucible in a controlled atmosphere |
| EP2703526A4 (en) * | 2012-03-23 | 2014-12-31 | Shinetsu Quartz Prod | SILICONE CONTAINER FOR BREEDING A SILICON CRYSTAL AND MANUFACTURING METHOD THEREFOR |
| WO2014167788A1 (ja) * | 2013-04-08 | 2014-10-16 | 信越石英株式会社 | 単結晶シリコン引き上げ用シリカ容器及びその製造方法 |
| US10308541B2 (en) | 2014-11-13 | 2019-06-04 | Gerresheimer Glas Gmbh | Glass forming machine particle filter, a plunger unit, a blow head, a blow head support and a glass forming machine adapted to or comprising said filter |
| JP6220772B2 (ja) * | 2014-12-26 | 2017-10-25 | クアーズテック株式会社 | 石英ガラスルツボの製造方法 |
| US10822716B2 (en) * | 2016-09-13 | 2020-11-03 | Sumco Corporation | Quartz glass crucible and manufacturing method thereof |
| JP6769893B2 (ja) * | 2017-02-24 | 2020-10-14 | 東ソ−・エスジ−エム株式会社 | Ｏｈ基拡散抑制能を有する石英ガラス材料及びその製造方法 |
| US10710918B1 (en) | 2018-02-19 | 2020-07-14 | Owens-Brockway Glass Container Inc. | Method of manufacturing a hollow glass article having a container shape |
| CN111122373B (zh) * | 2018-10-30 | 2024-01-02 | 贝特瑞新材料集团股份有限公司 | 一种纳米硅基材料中硅含量的测试方法 |
| JP7724066B2 (ja) * | 2021-03-05 | 2025-08-15 | 信越石英株式会社 | 石英ガラスるつぼの評価方法及び製造方法 |
| US20240141546A1 (en) * | 2021-03-05 | 2024-05-02 | Shin-Etsu Quartz Products Co., Ltd. | Method for evaluating quartz glass crucible, method for manufacturing the same, and quartz glass crucible |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5145510A (en) * | 1990-09-07 | 1992-09-08 | Mitsubishi Kasei Corporation | Silica glass powder and a method for its production and a silica glass body product made thereof |
| JPH11199369A (ja) * | 1998-01-08 | 1999-07-27 | Toshiba Ceramics Co Ltd | シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法 |
| US7118789B2 (en) * | 2001-07-16 | 2006-10-10 | Heraeus Shin-Etsu America | Silica glass crucible |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01148718A (ja) | 1987-12-03 | 1989-06-12 | Shin Etsu Handotai Co Ltd | 石英るつぼの製造方法 |
| JPH0729871B2 (ja) | 1987-12-03 | 1995-04-05 | 信越半導体 株式会社 | 単結晶引き上げ用石英るつぼ |
| US4935046A (en) | 1987-12-03 | 1990-06-19 | Shin-Etsu Handotai Company, Limited | Manufacture of a quartz glass vessel for the growth of single crystal semiconductor |
| JP2559604B2 (ja) * | 1987-12-15 | 1996-12-04 | 東芝セラミックス株式会社 | 石英ガラスルツボの製造方法 |
| JPH0422861A (ja) | 1990-05-17 | 1992-01-27 | Matsushita Seiko Co Ltd | 炭酸ガス検知装置 |
| JPH0729871A (ja) | 1993-06-25 | 1995-01-31 | Toshiba Corp | 表面処理方法および表面処理装置 |
| JPH07206451A (ja) | 1993-12-29 | 1995-08-08 | Nippon Steel Corp | 合成石英ガラスの製造方法 |
| JPH07277743A (ja) | 1994-04-04 | 1995-10-24 | Nippon Steel Corp | 合成石英ガラスの製造方法 |
| JP3702904B2 (ja) | 1994-04-04 | 2005-10-05 | セイコーエプソン株式会社 | 合成石英ガラスの製造方法 |
| JP3100836B2 (ja) | 1994-06-20 | 2000-10-23 | 信越石英株式会社 | 石英ガラスルツボとその製造方法 |
| DE19541372A1 (de) * | 1994-11-15 | 1996-05-23 | Gen Electric | Tiegel aus geschmolzenem Quarz sowie Verfahren zu dessen Herstellung |
| US5976247A (en) | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
| JP3764776B2 (ja) | 1996-03-18 | 2006-04-12 | 信越石英株式会社 | 単結晶引き上げ用石英ガラスるつぼ及びその製造方法 |
| JP3798849B2 (ja) | 1996-07-09 | 2006-07-19 | 信越石英株式会社 | 石英ルツボの製造装置及び方法 |
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| EP0911429A1 (en) | 1997-09-30 | 1999-04-28 | Heraeus Quarzglas GmbH | Quartz glass crucible for producing silicon single crystal and method for producing the crucible |
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-
2009
- 2009-07-15 JP JP2009166799A patent/JP4922355B2/ja active Active
-
2010
- 2010-06-01 KR KR1020117012685A patent/KR101268483B1/ko not_active Expired - Fee Related
- 2010-06-01 EP EP10799555A patent/EP2455349A1/en not_active Withdrawn
- 2010-06-01 CN CN201080003082.5A patent/CN102197002B/zh not_active Expired - Fee Related
- 2010-06-01 US US13/123,629 patent/US8733127B2/en not_active Expired - Fee Related
- 2010-06-01 WO PCT/JP2010/003651 patent/WO2011007491A1/ja not_active Ceased
- 2010-06-07 TW TW099118423A patent/TWI421222B/zh not_active IP Right Cessation
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| US5145510A (en) * | 1990-09-07 | 1992-09-08 | Mitsubishi Kasei Corporation | Silica glass powder and a method for its production and a silica glass body product made thereof |
| JPH11199369A (ja) * | 1998-01-08 | 1999-07-27 | Toshiba Ceramics Co Ltd | シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法 |
| US7118789B2 (en) * | 2001-07-16 | 2006-10-10 | Heraeus Shin-Etsu America | Silica glass crucible |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201119958A (en) | 2011-06-16 |
| US20110192758A1 (en) | 2011-08-11 |
| JP2011020886A (ja) | 2011-02-03 |
| EP2455349A1 (en) | 2012-05-23 |
| CN102197002B (zh) | 2014-03-19 |
| JP4922355B2 (ja) | 2012-04-25 |
| CN102197002A (zh) | 2011-09-21 |
| KR20110092292A (ko) | 2011-08-17 |
| US8733127B2 (en) | 2014-05-27 |
| WO2011007491A1 (ja) | 2011-01-20 |
| KR101268483B1 (ko) | 2013-06-04 |
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