TWI414023B - 用於製造一半導體器件的方法 - Google Patents

用於製造一半導體器件的方法 Download PDF

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Publication number
TWI414023B
TWI414023B TW096100710A TW96100710A TWI414023B TW I414023 B TWI414023 B TW I414023B TW 096100710 A TW096100710 A TW 096100710A TW 96100710 A TW96100710 A TW 96100710A TW I414023 B TWI414023 B TW I414023B
Authority
TW
Taiwan
Prior art keywords
region
active region
active
gate structure
forming
Prior art date
Application number
TW096100710A
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English (en)
Chinese (zh)
Other versions
TW200737359A (en
Inventor
Leo Mathew
Lixin Ge
Surya Veeraraghavan
Original Assignee
Freescale Semiconductor Inc
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Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200737359A publication Critical patent/TW200737359A/zh
Application granted granted Critical
Publication of TWI414023B publication Critical patent/TWI414023B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW096100710A 2006-02-08 2007-01-08 用於製造一半導體器件的方法 TWI414023B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/349,875 US7446001B2 (en) 2006-02-08 2006-02-08 Method for forming a semiconductor-on-insulator (SOI) body-contacted device with a portion of drain region removed

Publications (2)

Publication Number Publication Date
TW200737359A TW200737359A (en) 2007-10-01
TWI414023B true TWI414023B (zh) 2013-11-01

Family

ID=38333175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100710A TWI414023B (zh) 2006-02-08 2007-01-08 用於製造一半導體器件的方法

Country Status (5)

Country Link
US (1) US7446001B2 (enExample)
JP (1) JP5535486B2 (enExample)
CN (1) CN101379614B (enExample)
TW (1) TWI414023B (enExample)
WO (1) WO2007098305A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7964897B2 (en) * 2008-07-22 2011-06-21 Honeywell International Inc. Direct contact to area efficient body tie process flow
CN101931008B (zh) * 2010-07-13 2015-04-08 中国科学院上海微系统与信息技术研究所 一种具有体接触结构的pd soi器件
KR20140040543A (ko) 2012-09-26 2014-04-03 삼성전자주식회사 핀 구조의 전계효과 트랜지스터, 이를 포함하는 메모리 장치 및 그 반도체 장치
US9064725B2 (en) * 2012-12-14 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with embedded MOS varactor and method of making same
JP6373686B2 (ja) 2014-08-22 2018-08-15 ルネサスエレクトロニクス株式会社 半導体装置
US9177968B1 (en) 2014-09-19 2015-11-03 Silanna Semiconductor U.S.A., Inc. Schottky clamped radio frequency switch
CN106571359B (zh) 2015-10-10 2019-08-27 中芯国际集成电路制造(北京)有限公司 静电放电保护结构及其形成方法
JP6612937B2 (ja) * 2018-07-18 2019-11-27 ルネサスエレクトロニクス株式会社 半導体装置
US20210391438A1 (en) * 2020-06-15 2021-12-16 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect Structure Having a Multi-Deck Conductive Feature and Method of Forming the Same

Citations (1)

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Publication number Priority date Publication date Assignee Title
US5821575A (en) * 1996-05-20 1998-10-13 Digital Equipment Corporation Compact self-aligned body contact silicon-on-insulator transistor

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US4835584A (en) * 1986-11-27 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench transistor
US4753895A (en) * 1987-02-24 1988-06-28 Hughes Aircraft Company Method of forming low leakage CMOS device on insulating substrate
US4922315A (en) * 1987-11-13 1990-05-01 Kopin Corporation Control gate lateral silicon-on-insulator bipolar transistor
US4906587A (en) * 1988-07-29 1990-03-06 Texas Instruments Incorporated Making a silicon-on-insulator transistor with selectable body node to source node connection
US5008723A (en) * 1989-12-29 1991-04-16 Kopin Corporation MOS thin film transistor
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie
JP4014677B2 (ja) * 1996-08-13 2007-11-28 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US5932911A (en) * 1996-12-13 1999-08-03 Advanced Micro Devices, Inc. Bar field effect transistor
US6355532B1 (en) * 1999-10-06 2002-03-12 Lsi Logic Corporation Subtractive oxidation method of fabricating a short-length and vertically-oriented channel, dual-gate, CMOS FET
JP3504212B2 (ja) * 2000-04-04 2004-03-08 シャープ株式会社 Ｓｏｉ構造の半導体装置
JP2002033484A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
US7163864B1 (en) * 2000-10-18 2007-01-16 International Business Machines Corporation Method of fabricating semiconductor side wall fin
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US6538284B1 (en) * 2001-02-02 2003-03-25 Advanced Micro Devices, Inc. SOI device with body recombination region, and method
JP4304884B2 (ja) * 2001-06-06 2009-07-29 日本電気株式会社 半導体装置及びその製造方法
JP4115158B2 (ja) * 2002-04-24 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
JP4546021B2 (ja) * 2002-10-02 2010-09-15 ルネサスエレクトロニクス株式会社 絶縁ゲート型電界効果型トランジスタ及び半導体装置
US6885055B2 (en) * 2003-02-04 2005-04-26 Lee Jong-Ho Double-gate FinFET device and fabricating method thereof
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US7013447B2 (en) * 2003-07-22 2006-03-14 Freescale Semiconductor, Inc. Method for converting a planar transistor design to a vertical double gate transistor design
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821575A (en) * 1996-05-20 1998-10-13 Digital Equipment Corporation Compact self-aligned body contact silicon-on-insulator transistor

Also Published As

Publication number Publication date
US20070181946A1 (en) 2007-08-09
CN101379614A (zh) 2009-03-04
JP2009526409A (ja) 2009-07-16
US7446001B2 (en) 2008-11-04
WO2007098305A3 (en) 2008-03-13
WO2007098305A2 (en) 2007-08-30
JP5535486B2 (ja) 2014-07-02
CN101379614B (zh) 2010-12-08
TW200737359A (en) 2007-10-01

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