CN101379614B - 用于形成绝缘体上半导体（soi）体接触器件的方法和设备 - Google Patents

用于形成绝缘体上半导体（soi）体接触器件的方法和设备 Download PDF

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Publication number
CN101379614B
CN101379614B CN2007800050278A CN200780005027A CN101379614B CN 101379614 B CN101379614 B CN 101379614B CN 2007800050278 A CN2007800050278 A CN 2007800050278A CN 200780005027 A CN200780005027 A CN 200780005027A CN 101379614 B CN101379614 B CN 101379614B
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semiconductor device
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CN101379614A (zh
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莱奥·马修
葛立新
苏里亚·维拉拉加万
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2007800050278A 2006-02-08 2007-01-22 用于形成绝缘体上半导体（soi）体接触器件的方法和设备 Active CN101379614B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/349,875 US7446001B2 (en) 2006-02-08 2006-02-08 Method for forming a semiconductor-on-insulator (SOI) body-contacted device with a portion of drain region removed
US11/349,875 2006-02-08
PCT/US2007/060843 WO2007098305A2 (en) 2006-02-08 2007-01-22 Method and apparatus for forming a semiconductor-on-insulator (soi) body-contacted device

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CN101379614A CN101379614A (zh) 2009-03-04
CN101379614B true CN101379614B (zh) 2010-12-08

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CN2007800050278A Active CN101379614B (zh) 2006-02-08 2007-01-22 用于形成绝缘体上半导体（soi）体接触器件的方法和设备

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US (1) US7446001B2 (enExample)
JP (1) JP5535486B2 (enExample)
CN (1) CN101379614B (enExample)
TW (1) TWI414023B (enExample)
WO (1) WO2007098305A2 (enExample)

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US7964897B2 (en) * 2008-07-22 2011-06-21 Honeywell International Inc. Direct contact to area efficient body tie process flow
CN101931008B (zh) * 2010-07-13 2015-04-08 中国科学院上海微系统与信息技术研究所 一种具有体接触结构的pd soi器件
KR20140040543A (ko) 2012-09-26 2014-04-03 삼성전자주식회사 핀 구조의 전계효과 트랜지스터, 이를 포함하는 메모리 장치 및 그 반도체 장치
US9064725B2 (en) * 2012-12-14 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with embedded MOS varactor and method of making same
JP6373686B2 (ja) 2014-08-22 2018-08-15 ルネサスエレクトロニクス株式会社 半導体装置
US9177968B1 (en) 2014-09-19 2015-11-03 Silanna Semiconductor U.S.A., Inc. Schottky clamped radio frequency switch
CN106571359B (zh) 2015-10-10 2019-08-27 中芯国际集成电路制造(北京)有限公司 静电放电保护结构及其形成方法
JP6612937B2 (ja) * 2018-07-18 2019-11-27 ルネサスエレクトロニクス株式会社 半導体装置
US20210391438A1 (en) * 2020-06-15 2021-12-16 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect Structure Having a Multi-Deck Conductive Feature and Method of Forming the Same

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US5932911A (en) * 1996-12-13 1999-08-03 Advanced Micro Devices, Inc. Bar field effect transistor
US6429487B1 (en) * 2000-07-18 2002-08-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having gate to body connection

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US4922315A (en) * 1987-11-13 1990-05-01 Kopin Corporation Control gate lateral silicon-on-insulator bipolar transistor
US4906587A (en) * 1988-07-29 1990-03-06 Texas Instruments Incorporated Making a silicon-on-insulator transistor with selectable body node to source node connection
US5008723A (en) * 1989-12-29 1991-04-16 Kopin Corporation MOS thin film transistor
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie
US5821575A (en) * 1996-05-20 1998-10-13 Digital Equipment Corporation Compact self-aligned body contact silicon-on-insulator transistor
JP4014677B2 (ja) * 1996-08-13 2007-11-28 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6355532B1 (en) * 1999-10-06 2002-03-12 Lsi Logic Corporation Subtractive oxidation method of fabricating a short-length and vertically-oriented channel, dual-gate, CMOS FET
JP3504212B2 (ja) * 2000-04-04 2004-03-08 シャープ株式会社 Ｓｏｉ構造の半導体装置
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US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US6538284B1 (en) * 2001-02-02 2003-03-25 Advanced Micro Devices, Inc. SOI device with body recombination region, and method
JP4304884B2 (ja) * 2001-06-06 2009-07-29 日本電気株式会社 半導体装置及びその製造方法
JP4115158B2 (ja) * 2002-04-24 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
JP4546021B2 (ja) * 2002-10-02 2010-09-15 ルネサスエレクトロニクス株式会社 絶縁ゲート型電界効果型トランジスタ及び半導体装置
US6885055B2 (en) * 2003-02-04 2005-04-26 Lee Jong-Ho Double-gate FinFET device and fabricating method thereof
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US5932911A (en) * 1996-12-13 1999-08-03 Advanced Micro Devices, Inc. Bar field effect transistor
US6429487B1 (en) * 2000-07-18 2002-08-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having gate to body connection

Also Published As

Publication number Publication date
US20070181946A1 (en) 2007-08-09
CN101379614A (zh) 2009-03-04
TWI414023B (zh) 2013-11-01
JP2009526409A (ja) 2009-07-16
US7446001B2 (en) 2008-11-04
WO2007098305A3 (en) 2008-03-13
WO2007098305A2 (en) 2007-08-30
JP5535486B2 (ja) 2014-07-02
TW200737359A (en) 2007-10-01

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Address after: Texas in the United States

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Patentee before: Fisical Semiconductor Inc.