TWI409579B - 光罩之製造方法、描繪裝置、光罩之檢查方法及光罩之檢查裝置 - Google Patents

光罩之製造方法、描繪裝置、光罩之檢查方法及光罩之檢查裝置 Download PDF

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Publication number
TWI409579B
TWI409579B TW098136718A TW98136718A TWI409579B TW I409579 B TWI409579 B TW I409579B TW 098136718 A TW098136718 A TW 098136718A TW 98136718 A TW98136718 A TW 98136718A TW I409579 B TWI409579 B TW I409579B
Authority
TW
Taiwan
Prior art keywords
data
mask
film
pattern
blank
Prior art date
Application number
TW098136718A
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English (en)
Chinese (zh)
Other versions
TW201027238A (en
Inventor
Hisami Ikebe
Toshiyuki Tanaka
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW201027238A publication Critical patent/TW201027238A/zh
Application granted granted Critical
Publication of TWI409579B publication Critical patent/TWI409579B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW098136718A 2008-11-04 2009-10-29 光罩之製造方法、描繪裝置、光罩之檢查方法及光罩之檢查裝置 TWI409579B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008283552 2008-11-04

Publications (2)

Publication Number Publication Date
TW201027238A TW201027238A (en) 2010-07-16
TWI409579B true TWI409579B (zh) 2013-09-21

Family

ID=42276538

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098136718A TWI409579B (zh) 2008-11-04 2009-10-29 光罩之製造方法、描繪裝置、光罩之檢查方法及光罩之檢查裝置

Country Status (4)

Country Link
JP (2) JP5331638B2 (ja)
KR (2) KR101172575B1 (ja)
CN (1) CN101738851B (ja)
TW (1) TWI409579B (ja)

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* Cited by examiner, † Cited by third party
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JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
JP2012027176A (ja) * 2010-07-22 2012-02-09 Tosoh Corp フォトマスク用基板
JP5688308B2 (ja) * 2011-02-18 2015-03-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5937409B2 (ja) * 2011-04-13 2016-06-22 Hoya株式会社 フォトマスク用基板、フォトマスク、フォトマスクの製造方法、及びパターン転写方法
JP5937873B2 (ja) * 2011-04-13 2016-06-22 Hoya株式会社 フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法
JP5970021B2 (ja) * 2013-08-20 2016-08-17 Hoya株式会社 フォトマスクの製造方法、描画装置、フォトマスクの検査方法、フォトマスクの検査装置、及び表示装置の製造方法
US9454073B2 (en) * 2014-02-10 2016-09-27 SK Hynix Inc. Photomask blank and photomask for suppressing heat absorption
JP6293023B2 (ja) * 2014-09-04 2018-03-14 株式会社ニューフレアテクノロジー 検査方法
JP6559433B2 (ja) 2015-02-17 2019-08-14 Hoya株式会社 フォトマスクの製造方法、描画装置、フォトマスクの検査方法、フォトマスクの検査装置、及び表示装置の製造方法
JP6553887B2 (ja) 2015-02-19 2019-07-31 Hoya株式会社 フォトマスクの製造方法、描画装置、フォトマスクの検査方法、及び表示装置の製造方法
JP2017129848A (ja) * 2016-01-18 2017-07-27 Hoya株式会社 基板保持装置、描画装置、フォトマスク検査装置、および、フォトマスクの製造方法
JP6556673B2 (ja) * 2016-07-26 2019-08-07 Hoya株式会社 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置
KR102396647B1 (ko) 2017-10-12 2022-05-11 삼성전자주식회사 포토마스크의 레이아웃 설계 방법 및 포토마스크의 제조 방법
JP2019135464A (ja) 2018-02-05 2019-08-15 株式会社ニューフレアテクノロジー パターン検査方法およびパターン検査装置
JP2018136584A (ja) * 2018-06-12 2018-08-30 Hoya株式会社 表示装置製造用フォトマスクの製造方法、表示装置製造用描画装置、表示装置製造用フォトマスクの検査方法、及び表示装置製造用フォトマスクの検査装置
JP6681945B2 (ja) * 2018-06-27 2020-04-15 Hoya株式会社 表示装置製造用フォトマスクの製造方法、描画装置、フォトマスクの検査方法、及びフォトマスクの検査装置
US11709988B2 (en) 2018-12-31 2023-07-25 Asml Netherlands B.V. Method for predicting resist deformation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6472107B1 (en) * 1999-09-30 2002-10-29 Photronics, Inc. Disposable hard mask for photomask plasma etching
TWI262546B (en) * 2002-01-24 2006-09-21 Hitachi Ltd Manufacturing method of mask and manufacturing method of semiconductor integrated circuit device
TWI272660B (en) * 2004-07-27 2007-02-01 Toshiba Corp Method of manufacturing exposure mask, lithography system, method of manufacturing semiconductor device and mask blank product

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JPH0587544A (ja) * 1991-09-27 1993-04-06 Toshiba Corp 欠陥検査装置
JP3818599B2 (ja) * 1994-03-31 2006-09-06 Ｈｏｙａ株式会社 パターン評価方法及びパターン転写方法
JP3393947B2 (ja) * 1995-03-13 2003-04-07 株式会社東芝 半導体回路パターンの評価方法と評価システム及び描画方法及び描画システム
US6883158B1 (en) * 1999-05-20 2005-04-19 Micronic Laser Systems Ab Method for error reduction in lithography
JP2001183811A (ja) * 1999-12-22 2001-07-06 Toppan Printing Co Ltd マスクパターン形状評価装置および形状評価方法並びに形状評価プログラムを記録した記録媒体
JP3791484B2 (ja) * 2002-11-14 2006-06-28 ソニー株式会社 露光方法および半導体装置の製造方法
KR100496454B1 (ko) * 2003-04-30 2005-06-22 주식회사 피케이엘 스테이지 기울어짐과 포토마스크 표면의 불균일에 의한선폭변화 보정방법
US20050088664A1 (en) * 2003-10-27 2005-04-28 Lars Stiblert Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface
TWI484302B (zh) * 2004-12-22 2015-05-11 尼康股份有限公司 光罩表面的高度方向位置測定方法、曝光裝置以及曝光方法
JP5153998B2 (ja) * 2005-02-25 2013-02-27 Ｈｏｙａ株式会社 マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法
JP5087258B2 (ja) * 2005-11-04 2012-12-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置、位置ずれ量計測方法及び位置計測装置
JP2008158056A (ja) * 2006-12-21 2008-07-10 Seiko Instruments Inc レチクルの製造方法
JP2008203373A (ja) * 2007-02-16 2008-09-04 Clean Surface Gijutsu:Kk ハーフトーンブランクス及びハーフトーンブランクスの製造方法
JP2008112178A (ja) * 2007-11-22 2008-05-15 Advanced Mask Inspection Technology Kk マスク検査装置
JP2010079112A (ja) * 2008-09-28 2010-04-08 Hoya Corp フォトマスクの製造方法、及びパターン転写方法
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6472107B1 (en) * 1999-09-30 2002-10-29 Photronics, Inc. Disposable hard mask for photomask plasma etching
TWI262546B (en) * 2002-01-24 2006-09-21 Hitachi Ltd Manufacturing method of mask and manufacturing method of semiconductor integrated circuit device
TWI272660B (en) * 2004-07-27 2007-02-01 Toshiba Corp Method of manufacturing exposure mask, lithography system, method of manufacturing semiconductor device and mask blank product

Also Published As

Publication number Publication date
JP2013218339A (ja) 2013-10-24
CN101738851A (zh) 2010-06-16
JP5331638B2 (ja) 2013-10-30
TW201027238A (en) 2010-07-16
JP2010134433A (ja) 2010-06-17
KR20120082389A (ko) 2012-07-23
CN101738851B (zh) 2012-10-10
KR101319730B1 (ko) 2013-10-17
JP5538591B2 (ja) 2014-07-02
KR20100050407A (ko) 2010-05-13
KR101172575B1 (ko) 2012-08-08

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