201027238 六、發明說明： 【發明所屬之技術領域】 本發明係關於LSI或液晶顯示裝置（Liquid Crystal Display，以下稱LCD)等製造上所使用之光罩之製造方 法、描繪裝置、光罩之檢查方法及光罩之檢查裝置。 【先前技術】 薄膜電晶體液晶顯示裝置（Thin Film Transistor Liquid Crystal Display，以下稱TFT-LCD)，與 CRT(陰極射線管） 比較’因易薄型化且消耗電力較低之優點，目前其被商品 化、朝大型化急速進展。TFT_lcd，具有於排列成矩陣狀 之各像素排列TFT之構造之TFT基板，與對應於各像素排 列紅、綠及藍之像素圖案之彩色濾光片，介隔以液晶相而 重疊之概略構造。 TFT-LCD之製造中，與LSI之製造相同，利用投影曝光 技術之微影步驟係必須的。進行該投影曝光時作為遮罩所 使用之光罩，係於透明基板上形成薄膜，經過圖案化，而 形成包含透光部與遮光部之曝光用轉印圖案者（亦有進而 包含半透光部之情形）。該轉印圖案，相對設計之特定座 標’各個圖案有必要正確地成為特定位置關係。該位置關 係之正確性與圖案之更細微化、高解析度化成比例，被要 求有較高度的正確性。 S亥轉印圖案通常於透光性基板表面形成有遮光膜、及/ 或半透光膜（以下簡稱薄膜）之空白光罩上，形成抗蝕膜， 成為附有抗蝕膜之空白光罩，於該抗蝕膜以雷射或電子束 144255.doc 201027238 等能量射束描繪轉印圖案後，利用顯影後之抗蝕圖案藉由 蝕刻而形成。該描繪步驟中’將附有抗蝕膜之空白光罩保 持於台座，將待描繪之圖案作為設計描繪資料儲存於電 腦，基於該設計描繪資料控制描繪光照射位置及/或台座 之位置而進行描綠。 此處，考慮有必要使藉由該描繪而曝光、利用抗蝕劑之 顯影、薄膜之蝕刻而實際形成於光罩之轉印圖案及光罩 使用者所指定之於設計描繪資料所示之轉印圖案正確一 致。又，使用該光罩於被轉印體（液晶面板等裝置）上轉印 之圖案，必須滿足光罩使用者所要求之規格。使用不滿足 該條件之光罩進行圖案轉印時，將製造出大量之不良裝 置。 例如，曰本特開平7_273160號公報（專利文獻^中，記載 有評估光罩圖案之方法，其係針對製造之光罩，調查實際 形成之轉印圖案，及設計描繪資料所示之轉印圖案是否以 特定以上之精度一致。 另日本特表2007-512551號公報（專利文獻2)中，係記 載-種在曝光裝置中使用之表面寫人圖案之方法，其將厚 度為T之空白光罩配置於描繪機(描繪裝置)之台座上，將 ㈣H測定各測定點中表面之斜度，計 算各點之X-Y平面内二維局部低 ^丨偏移d’使用該二維局部偏移 d修正圖案。 【發明内容】 根據專利文獻1，雖的確可 作·）進仃圖案之評估，但形成於 144255.doc 201027238 光罩之轉印圖案藉由曝光轉印於被轉印體時，無法使其座 標精度提高。 另，專利文獻2中，其曝光系統等雖係以與寫入圖案時 產生之所有物理性變形無關之方式將圖案寫入對象物之方 法，但未考慮及區別與描緣步驟或曝光步驟不同之步驟中 之對象物之物理變形之要因之差異，因此以專利文獻2之 方法，形成具有相對設計描繪資料有充分精度之圖案之光 罩有其困難。 ® 此處，所s胃「設計描緣資料」，即反映企圖獲得之裝置 之圖案形狀之設計上的圖案資料。 本發明係以提供一種光罩之製造方法、檢查方法及裝置 為目的，可在LSI或LCD等電子裝置之製造中，更高精度 地製造TFT等電子裝置之圖案。 通常，載置於描繪機之狀態之空白光罩膜面，乃非理想 之平面形狀，會因各種要因而變形。再者，配置空白光罩 參 於描繪機時之變形要因，與曝光完成之光罩時之變形要因 不同。即，對從如前述般之理想的平面變形之膜面進行描 繪，若形成之光罩圖案面在曝光時變為與描繪時不同之形 狀，則會發生由設計描繪資料所決定之期望的圖案，無法 正確轉印於被轉印體上之情事。 本發明者等詳細分析配置於描繪機之台座上時之空白光 罩表面形狀之變形要因，明確其變形要因中在曝光裝置中 使用光罩時，殘存之變形要因與未殘存之變形要因。又， 考慮僅就於曝光時消失之要因所引起之座標偏差，修正設 144255.doc 201027238 計描繪資料而得到描繪資料。 於附有光阻劍之空白光軍上利用描緣機描緣圖案時，空 =光罩於▲緣機之台座上係使膜面朝上配置。此時，成為 空白光罩臈面之表面形狀自理想平坦面變形之要因，可考 慮有：（！）台座之不充分的平面度，（2)因台座上之異物爽 雜入而造成基板的撓曲，⑺空白光罩之基板表面的凹凸， (句起因於該基板之背面凹凸之變形等4個要因。即該狀 態下空白光罩之表面形狀之變形，係前述4個要因累積而 成者然後，對該狀態之空白光罩進行描繪。 。另-方面，在曝光裝置使用光罩時，藉由使其膜面向下 支撑端部而固定^將形成抗餘膜之被轉印體配置於光軍 之下自光罩之上照射曝光用光。該狀態下，前述4個變 开V要因巾（1)台座之不充分的平面度及⑺因台座上之 異物夾雜入所導致之基板的撓曲消失。另，⑷基板背面之 凹凸在該狀態下雖會殘留，但未形成圖案之背面之表面形 狀，對於表面（圖案形成面）之轉印無影響。另一方面，（3) f白光罩之基板表面之凹凸，在曝光裝置中使用光罩時亦 是殘留之變形要因。再者，將光罩設置於曝光機時，支撐 端部時因光罩重量產生撓曲，針對該撓曲成份，可利用搭 載於各曝光機之補償方法，一般相信不會對轉印性帶來^ 良影響。 據此，前述例中，測定膜面向上地配置於插繪機之台座 上之狀態下空白光罩上面側之表面形狀，針對其表面形狀 中則述（1)、（2)、（4)成為要因之自表面形狀之理想平面 144255.doc 201027238 之變化部分’修正設計描繪資料，作為減資料，而另一 要因之表面形狀變化部分’若未反映於前述修 則將得到具有更正確之座標設計資料之轉印性能之光 罩。 進行前述表面形狀之測定時 冉者 _ '，1 , Ί尔曰力又碲无罩時被 剝離之抗㈣上敎，但因為相對於基於⑴〜(4)之變形要 因對座標精度所造成之影響之㈣，抗㈣之膜厚極小 (通常_〜1000 nm左右），其變動更小，因此即使自抗蝕 膜之表面測定亦不會產生障礙。 即’本發明之光罩之製造方法係包含財步驟者，前述 描緣步驟係於含有透明基板、前述透明基板上之薄膜與該 薄媒上之光阻膜之空白光罩上，利财請機按特定的描緣 資^照射能量射束，而描、⑽定的轉㈣案者；且，藉由 計算前述財步驟中之前述空白光罩之膜面側之形狀:與 對前述光罩進行曝光時之前述^白光罩之膜面側之㈣之 形狀變化部分，基於計算出之形狀變化部分，修正用於前 返特定的轉印㈣线計料資料，㈣到 繪資料。 再者，此處所言之形狀變化部分，亦可不包含將光罩… 置於曝光機時所產生之因光罩自重所致之撓曲成份。^ 因為，對於因該撓輯致之圖案之座標偏差的_，_ 用搭載於曝光裝置之方法進行，因此在 ’、 不考慮。 "此在求-描綠資料時可 再者’本發明之光罩之製造方法係包含描緣步驟者，前 144255.doc 201027238 迷描纷步驟係於含有透明基板、前述透明基板上之薄 該薄膜上之光阻膜之空白光罩上，利用描緣機按特定⑽ 繪資料照射能量射束，而描縿特定的轉印圖案者·且 由使用··將前述空白光罩以其具有前述薄膜之面為上 置於描繪機之台座之狀態下，測定前述空白光軍之上側之 面之高度分佈而得之空白面高度分佈資料’及預先取得之 前述空白光罩之膜面形狀資料’修正用於前述特定的轉印 圖案之設計描繪資料，藉此得到前述特定的描繪資料。 ❹ 另’本發明之光軍之製造方法包括：準備含有透明基 板、則通透明基板上之薄膜與前述薄膜上之光阻膜之空白 光罩之步驟；將前述空白光罩以其具有前述薄膜之面:上 側載置於台座之步驟；藉由測定前述台座上之前述空白光 罩上侧之面之高度分佈’而獲得空白面高度分佈資料之步 驟；藉由使用預先取得之前述空白光罩之膜面形狀資料與 前述空白面高度分佈資料，修正用於特定的轉印圖案之設 冲描緣資料’而獲得特定的描緣資料之步驟；及藉由對前 述光阻媒’按則述特定的描纷資料照射能量射束，而描繪 前述特定的轉印圖案之步驟。 上述本發明之光軍之製造方法中，前述設計描♦資料之 c正較佳包3求传前述空白面高度分佈資料與前述膜面 形狀資料之差分。例如’可含有自前述空白面高度分佈資 料減去前述膜面形狀資料之步驟。另’前述本發明之光罩 之製&方法中’前述設計描繪資料之修正時可使用求取 前述空白面高度分佈資料與前述膜面形狀資料之差分而得 144255.doc • 8 - 201027238[Technical Field] The present invention relates to a method of manufacturing a photomask, a drawing device, and a mask for manufacturing an LSI or a liquid crystal display device (hereinafter referred to as LCD). Method and inspection device for the mask. [Prior Art] A Thin Film Transistor Liquid Crystal Display (hereinafter referred to as TFT-LCD) is compared with a CRT (Cathode Ray Tube) because it is easy to be thinner and consumes less power. The rapid development of the large-scale and large-scale development. The TFT_lcd has a schematic structure in which a TFT substrate having a structure in which TFTs are arranged in a matrix and arranged in a matrix, and a color filter corresponding to a pixel pattern of red, green, and blue in each pixel are stacked with a liquid crystal phase interposed therebetween. In the manufacture of a TFT-LCD, as with the manufacture of an LSI, a lithography step using projection exposure technology is necessary. The reticle used as a mask when performing the projection exposure is formed on a transparent substrate, and is patterned to form an exposure transfer pattern including a light transmitting portion and a light shielding portion (including a semi-transparent The situation of the Ministry). It is necessary for the transfer pattern to be correctly positioned to a specific position with respect to the specific coordinates of the design. The correctness of the positional relationship is proportional to the finer and higher resolution of the pattern, and is required to have a higher degree of correctness. The S-transfer pattern is usually formed on a blank mask having a light-shielding film and/or a semi-transmissive film (hereinafter referred to as a film) on the surface of the light-transmitting substrate to form a resist film, and becomes a blank mask with a resist film. After the transfer pattern is drawn by the energy beam such as laser or electron beam 144255.doc 201027238, the resist pattern is formed by etching using the developed resist pattern. In the drawing step, 'the blank mask with the resist film is held on the pedestal, and the pattern to be drawn is stored as a design drawing data on the computer, and the position of the light irradiation position and/or the position of the pedestal is controlled based on the design drawing data. Green. Here, it is considered that it is necessary to expose the transfer pattern formed by the drawing, the development by the resist, the etching of the thin film, and the transfer pattern specified by the user of the mask to the design drawing data. The printed pattern is correct and consistent. Further, the pattern to be transferred onto the object to be transferred (device such as a liquid crystal panel) using the mask must satisfy the specifications required by the user of the mask. When pattern transfer is performed using a photomask that does not satisfy this condition, a large number of defective devices are manufactured. For example, Japanese Laid-Open Patent Publication No. Hei 7-273160 (Patent Document No.) discloses a method of evaluating a mask pattern, and is directed to a photomask manufactured, a transfer pattern actually formed, and a transfer pattern shown by design drawing materials. In the Japanese Patent Publication No. 2007-512551 (Patent Document 2), a method of describing a surface writing pattern used in an exposure apparatus, which has a blank mask of thickness T, is described. It is placed on the pedestal of the drawing machine (drawing device), and the slope of the surface of each measuring point is measured by (4)H, and the two-dimensional local low-deflection offset d' in the XY plane of each point is calculated using the two-dimensional local offset d [Invention] According to Patent Document 1, although the evaluation of the entrance pattern is possible, the transfer pattern formed on the 144255.doc 201027238 mask is not transferred by the exposure transfer to the transfer target. Its coordinate accuracy is improved. Further, in Patent Document 2, the exposure system or the like is a method of writing a pattern to an object in such a manner as to be irrelevant to all physical deformations generated when a pattern is written, but the difference is not considered and the difference is different from the edge step or the exposure step. In the method of Patent Document 2, it is difficult to form a photomask having a pattern having sufficient precision with respect to the design drawing data, because of the difference in the physical deformation of the object in the step. ® Here, the s stomach "design profile data" is the design pattern data reflecting the pattern shape of the device to be obtained. In order to provide a method of manufacturing a photomask, an inspection method, and an apparatus, the present invention can produce a pattern of an electronic device such as a TFT with higher precision in the manufacture of an electronic device such as an LSI or an LCD. Usually, the blank photomask film surface placed in the state of the drawing machine is not ideally planar, and is deformed by various kinds. Furthermore, the factor of deformation when the blank mask is placed in the drawing machine is different from that of the mask when the exposure is completed. That is, the film surface which is deformed from the plane which is ideal as described above is drawn, and when the mask pattern surface formed is changed to a shape different from that at the time of drawing, a desired pattern determined by the design drawing material occurs. , can not be properly transferred to the transfer body. The inventors of the present invention analyzed in detail the causes of the deformation of the surface shape of the blank mask when placed on the pedestal of the drawing machine, and clarified the causes of the deformation and the residual deformation of the residual mask when the mask was used in the exposure apparatus. In addition, it is considered that the coordinates of the coordinates caused by the disappearance of the exposure are corrected, and the descriptive data is obtained by modifying the data of the 144255.doc 201027238. When using the tracer to draw the pattern on the blank light army with the photoresist sword, the empty mask is placed on the pedestal of the ▲ edge machine with the film facing up. At this time, the surface shape of the blank mask surface is deformed from the ideal flat surface, and it is considered that: (!) the insufficient flatness of the pedestal, and (2) the substrate due to the foreign matter on the pedestal (7) Concavities and convexities on the surface of the substrate of the blank mask (sentences due to deformation of the back surface of the substrate), that is, the deformation of the surface shape of the blank mask in this state is accumulated by the above four factors Then, the blank mask of the state is depicted. On the other hand, when the photomask is used in the exposure apparatus, the transfer body is formed to be formed by the film facing the lower support end. Under the light, the exposure light is irradiated from the mask. In this state, the four openings V are due to the insufficient flatness of the tidy (1) pedestal and (7) the substrate caused by the inclusion of foreign matter on the pedestal. (4) The unevenness on the back surface of the substrate remains in this state, but the surface shape of the back surface on which the pattern is not formed has no effect on the transfer of the surface (pattern forming surface). On the other hand, (3) f Surface of the substrate of the white mask When the reticle is used in the exposure apparatus, it is also a residual deformation factor. When the reticle is placed on the exposure machine, the end portion is deflected by the weight of the reticle, and the deflection component can be used. It is generally believed that the compensation method of each exposure machine does not have a good influence on the transferability. Accordingly, in the above example, the measurement film is placed on the upper side of the blank mask in a state where the film is placed on the pedestal of the interposer. For the surface shape, for the surface shape, (1), (2), and (4) become the part of the ideal plane from the surface shape 144255.doc 201027238. If the surface shape change portion is not reflected in the above-mentioned repair, a photomask having a more accurate transfer performance of the coordinate design data will be obtained. When the above surface shape is measured, the latter _ ',1, Ί尔曰力The anti-(4) upper crucible is peeled off when there is no cover, but because of the influence on the coordinate accuracy caused by the deformation factors based on (1) to (4), the film thickness of the anti-(4) is extremely small (usually _~1000 nm or so). Change It is smaller, so there is no obstacle even if it is measured from the surface of the resist film. That is, the manufacturing method of the photomask of the present invention includes a financial step, and the above-described striking step is applied to a film including a transparent substrate and the transparent substrate. On the blank reticle of the photoresist film on the thin medium, the profit machine irradiates the energy beam according to a specific characterization, and the (10) fixed turn (4) case; and, by calculating the aforementioned financial steps The shape of the film surface side of the blank mask in the case of the shape change portion of the film surface side of the white mask when the mask is exposed, based on the calculated shape change portion, corrected for forward return Specific transfer (four) line metering data, (4) to drawing data. Furthermore, the shape change part mentioned here may not include the deflection caused by the self-weight of the mask when the mask is placed on the exposure machine. Ingredients. ^ Because the _, _ of the coordinate deviation of the pattern due to the deflection is performed by the method of mounting on the exposure device, it is not considered. "This is in the case of seeking-depicting green data. 'The manufacturing method of the photomask of the present invention includes the step of drawing. The first step is 144255.doc 201027238. The steps are based on the thin substrate and the transparent substrate. On the blank mask of the photoresist film on the film, the energy beam is irradiated by the specific (10) data by the edge finder, and the specific transfer pattern is traced and the blank mask is used by the user. The surface of the film is placed on the pedestal of the drawing machine, and the blank surface height distribution data obtained by measuring the height distribution of the surface on the upper side of the blank light army and the film surface shape data of the blank mask previously obtained are obtained. 'Correcting design drawing materials for the specific transfer pattern described above, thereby obtaining the aforementioned specific drawing materials. ❹ The method of manufacturing the light army of the present invention comprises the steps of: preparing a blank reticle comprising a transparent substrate, a film on the transparent substrate and a photoresist film on the film; and the blank reticle having the film The step of loading the upper side on the pedestal; obtaining the blank surface height distribution data by measuring the height distribution of the upper surface of the blank reticle on the pedestal; by using the previously obtained blank reticle The film surface shape data and the blank surface height distribution data, the step of correcting the design data for the specific transfer pattern to obtain the specific trace data; and the description of the photoresist medium The specific drawing data illuminates the energy beam to depict the aforementioned specific transfer pattern. In the above-described manufacturing method of the light army of the present invention, the design of the data is better than the difference between the blank surface height distribution data and the film surface shape data. For example, 'the step of subtracting the aforementioned film surface shape data from the blank surface height distribution data may be included. Further, in the above-described method of manufacturing the photomask of the present invention, the correction of the design drawing data can be obtained by using the difference between the blank surface height distribution data and the film surface shape data to obtain 144255.doc • 8 - 201027238
❹ 之差分資料’基於在前述空白光罩表面上之複數位置中之 前述空白光罩之高度方向之斜度與前述空白光罩之厚度， 轉換前述設計L資料之座標值㈣行。或者亦可使用 求取前述空白面高度分佈資料與前述膜面形狀資料之差分 而得之差分資料’基於在前述空白光罩表面上之複數位置 中之前述空白光罩之高度方向之斜度與前述空白光罩之厚 度，修正描繪機之描繪座標系統而進行。即，本發明中， 所謂「設計崎資料之修正」’不僅包含修正設計描緣資 料本身之情形，亦包含描緣時藉由修正料機所具有之描 繪座標系統，得到相同效果之情形。 另，可進而包含將描繪所描繪之前述轉印圖案而得之抗 蝕圖案作為遮罩，蝕刻前述薄膜之步驟。 另，本發明之描繪裝置，係於表面形成光阻膜之空白光 罩上描繪特定的轉印圖案者，i包括：高度測定機構，其 係藉由測定使前述光阻膜朝上而配置於台座上之前述空白 光罩的表面之高度分佈，而獲得空白面高度分佈資料者； 運算機構，其係藉由使用預先取得之前述空白^罩之膜面 形狀資料與前述空白面高度分佈資料，修正用於前述特定 的轉印圖案之设汁描繪資料，而獲得特定的描綠資料者； 及描繪機構，其係對前述光阻膜，按前述特定的描繪資料 照射能量射束者。此處，所謂設計描繪資料之修正，同前 所述，除修正設計描繪資料本身之情形外，亦包含使用該 設計描繪資料進行描繪時修正描繪座標系統之情形。具有 如此修正描繪座標系統之機構（運算機構）之描繪裝置更 144255.doc -9- 201027238 佳。 另，本發明之光罩之檢查方法，係檢查於透明基板上包 括含有薄膜之轉印圖案之光罩者，且包括：將前述光罩以 其具有前述轉印圖案之面為上側載置於台座之步驟；藉由 測定前述台座上之前述光罩上側之面之高度分佈，而獲得 遮罩面高度分佈資料之步驟；測定前述台座上之前述光罩 之前述轉印圖案之形狀，而獲得圖案測長資料之步驟；及 使用預先取得之前述光罩之膜面形狀資料與前述遮罩面高 度分佈資料，而修正前述圖案測長資料或用於前述轉印圖 案之設計描繪資料之步驟。 例如 了包括使用預先取得之前述光罩之膜面形狀資料 與前述遮罩面高度分佈資料，修正前述圖案測長資料，比 較修正後之前述圖案測長資料與前述設計描繪資料之步 驟。或，可具有使用預先取得之前述光罩之膜面形狀資料 與前述遮罩面高度分佈資料，修正前述設計描繪資料比 較修正後之前述設計描繪資料與前述圖案測長資料之步 驟。作為此時所使用之前述膜面形狀資料，可使用前述光 罩部之膜面形狀資料使之近似。 再者，本發明之光罩之檢查裝置，係檢查於透明基板上 包括含有薄膜形成之轉印圖案之光罩者，且可包括：高度 測疋機構’其係藉由測定使前述轉印圖案朝上而配置於台 座上之前述光罩表面之高度分佈，而獲得遮罩面高度分佈 資料者；測長機構，其係測定前述台座上之前述光罩之轉 印圖案之形狀’而獲得圖案測長資料者；及運算機構，其 144255.doc •10· 201027238 係使用預先取棋,, 件之剛述光罩之膜面形狀資料與前述遮罩面 咼度分佈資料，而修正前述圖案測長資料或用於前述轉印 圖案之設計描繪資料者。 例如，包含一種光罩之檢查裝置，其包括：運算機構， 其係使用預先取得之前述光罩之膜面形狀資料與前述遮罩 面高度分佈資料，而修正前述圖案測長資料者；及比較機 構其係比較修正後之前述圖案測長資料與前述設計描繪 資料者。 * 再者，包含一種光罩之檢查裝置，其包括：運算機構， 其係使用Hi取得之前述膜面形&資料與前述遮罩面高度 分佈資料，而修正前述設計描繪資料者；及比較機構，其 係比較前述修正後之設計描繪資料與前述圖案測長資料 者。 本發明之光罩之製造方法，係測定配置於描繪機之台座 上之狀態下之空白光罩之膜面側之表面形狀，自其表面形 狀之理想平面之變形要因中，於該空白光罩成為形成圖案 之光罩且設置於曝光裝置之狀態下，就前述表面形狀變化 之變化部分，修正設計描緣資料。I體言之，自描繪時膜 面形狀之理想平面之變形要因中，區別曝光時亦殘留之部 分（膜面之凹凸）與曝光時消失之部分（因異物所造成之基板 之撓曲等），就相當於曝光時消失部分之座標偏差修正 設計描繪資料，得到特定的描繪資料.據此，使用遮罩 時，轉印於被轉印體上之轉印圖案，將正確地反應欲得之 裝置圖案之設計描緣資料。The differential data ❹ converts the coordinate value (four) of the design L data based on the slope of the height direction of the blank mask in the plurality of positions on the surface of the blank mask and the thickness of the blank mask. Alternatively, the difference data obtained by obtaining the difference between the blank surface height distribution data and the film surface shape data may be used based on the slope of the height direction of the blank mask in the plurality of positions on the surface of the blank mask. The thickness of the blank mask is corrected by modifying the drawing coordinate system of the drawing machine. That is, in the present invention, the "correction of designing the data" does not only include the case of correcting the design description material itself, but also the case where the same effect is obtained by correcting the drawing coordinate system of the material feeder. Further, the step of etching the film may be further included as a mask in which a resist pattern obtained by drawing the transferred transfer pattern is used as a mask. Further, the drawing device of the present invention is characterized in that a specific transfer pattern is drawn on a blank mask having a photoresist film formed on the surface thereof, and includes a height measuring mechanism which is disposed by measuring the photoresist film facing upward. a height distribution of the surface of the blank mask on the pedestal to obtain a blank surface height distribution data; and an operation mechanism, which uses the film surface shape data of the blank mask previously obtained and the blank surface height distribution data, Correcting the juice drawing data for the specific transfer pattern described above to obtain a specific green data; and drawing means for irradiating the energy beam to the photoresist film in accordance with the specific drawing data. Here, the correction of the design drawing data, as described above, in addition to the case of correcting the design drawing material itself, also includes the case of correcting the drawing coordinate system when drawing with the design drawing data. The drawing device having the mechanism (computing mechanism) for correcting the coordinate system is improved by 144255.doc -9- 201027238. In addition, the method for inspecting a photomask of the present invention is to inspect a photomask including a transfer pattern of a thin film on a transparent substrate, and includes: placing the photomask on the upper side of the surface having the transfer pattern a step of obtaining a mask surface height distribution data by measuring a height distribution of a surface of the upper surface of the reticle on the pedestal; and measuring a shape of the transfer pattern of the reticle on the pedestal to obtain a step of patterning the length data; and modifying the pattern length measurement data or the design drawing data for the transfer pattern by using the film surface shape data of the mask obtained in advance and the mask surface height distribution data. For example, the method includes the steps of correcting the pattern length measurement data by using the mask surface shape data of the mask obtained in advance and the mask surface height distribution data, and comparing the corrected pattern length measurement data with the design drawing data. Alternatively, the method of correcting the design drawing data and the pattern length measuring data after the correction of the design drawing data by using the mask surface shape data of the mask obtained in advance and the mask surface height distribution data may be used. As the above-mentioned film surface shape data used at this time, the film surface shape data of the above-mentioned mask portion can be approximated. Furthermore, the inspection apparatus for a photomask of the present invention is for inspecting a photomask including a transfer pattern formed by a thin film on a transparent substrate, and may include: a height measuring mechanism that determines the transfer pattern by measurement a height distribution of the surface of the reticle disposed on the pedestal to obtain a height distribution of the mask surface; and a length measuring mechanism for determining a shape of the transfer pattern of the reticle on the pedestal to obtain a pattern For measuring the length of the data; and the computing mechanism, the 144255.doc •10· 201027238 is to use the advance film, the film shape data of the mask and the mask surface distribution data, and correct the pattern test Long material or design data for the aforementioned transfer pattern. For example, an inspection apparatus including a photomask includes: an arithmetic unit that corrects the pattern length measurement data by using the mask surface shape data of the mask obtained in advance and the mask surface height distribution data; and comparing The organization compares the corrected pattern length measurement data with the aforementioned design depiction data. Further, an inspection apparatus including a reticle includes: an arithmetic unit that corrects the design drawing data by using the film surface shape data obtained by Hi and the mask surface height distribution data; and comparing The institution compares the revised design drawing data with the aforementioned pattern length measuring data. In the method for manufacturing a photomask according to the present invention, the surface shape of the film surface side of the blank mask in a state of being placed on the pedestal of the drawing machine is measured, and the blank mask is formed from the ideal plane of the surface shape. In the state in which the mask is formed and placed in the exposure apparatus, the design margin data is corrected in accordance with the change in the surface shape change. In other words, in the case of the deformation of the ideal plane of the film surface shape during the drawing, the part remaining in the exposure (the unevenness of the film surface) and the portion which disappears during the exposure (the deflection of the substrate due to the foreign matter, etc.) It is equivalent to the coordinate deviation correction design drawing data of the disappearance portion at the time of exposure, and the specific drawing data is obtained. Accordingly, when the mask is used, the transfer pattern transferred onto the transferred body will be correctly reflected. The design of the device pattern is described.
14423D.QOC 201027238 再者’該光罩檢查步驟中，亦相對於載置於檢查機之台 座上之狀態下所得之測長資料，針對因異物所造成之基板 之換曲等、相當於曝光時消失之變形部分之座標偏差，修 正測長資料或設計描繪資料，與設計描繪資料比較，評估 遮罩。據此，可正確評估形成於遮罩之圖案的良否。 【實施方式】 以下，使用圖、實施例等說明本發明之實施形態。並 且，該等圓、實施例等及說明，係例示本發明者，並非限 制本發明之範圍。當然合乎本發明主旨範圍之其他實施形 態，亦屬於本發明之範_。 圖1係本發明之實施形態之光罩製造方法所使用之描繪 裝置之概念圖。該描繪裝置，至少具有台座1〇、描繪機構 11、高度測定機構u及描繪資料作成機構15(運算機構）。 於台座H)上固定有空白光罩13。空白光罩於單面形成至少 包含遮光膜之薄膜14,使形成薄膜14之面向上配置 機構U，例如照射雷射，描繪步驟t，係用以描繪特二 轉印圖案於固定於台座10之附有光阻膜之空白光罩U者。 咼度測定機構12，例如藉由空氣墊等，自空白光罩u之 表面隔開一定距離配置。高度測定機構12，：應因办白2 罩！3之表面形狀之高度的變化，高度成為上下動^ 可測定空白光罩13之表面高度（z方向）之變化。 再者’作為測定表面高度之方法，除前述外亦可使用 用以將與高度測定機構丨2相同之構 灰 仵維持於—定位置之空 乳流里進行測定之方法’或藉由間隙間之靜電容量、利用 144255.doc -12· 201027238 雷射之脈衝計數、光學上聚焦者等。14423D.QOC 201027238 In addition, in the mask inspection step, the length measurement data obtained in the state of being placed on the pedestal of the inspection machine is equivalent to the exposure of the substrate due to the foreign matter, etc., corresponding to the exposure time. The coordinate deviation of the deformed part of the disappearance, the length measurement data or the design drawing data is corrected, and the mask is evaluated in comparison with the design drawing data. According to this, the quality of the pattern formed on the mask can be correctly evaluated. [Embodiment] Hereinafter, embodiments of the present invention will be described using the drawings, the examples, and the like. Further, the present invention, the embodiments, and the like, are not intended to limit the scope of the present invention. Other embodiments that are within the scope of the inventive subject matter are also within the scope of the invention. Fig. 1 is a conceptual diagram of a drawing device used in a method of manufacturing a mask according to an embodiment of the present invention. The drawing device includes at least a pedestal 1, a drawing unit 11, a height measuring unit u, and a drawing data creating unit 15 (computing means). A blank mask 13 is fixed to the pedestal H). The blank mask forms a film 14 including at least a light-shielding film on one surface, and forms an upwardly facing mechanism U for forming the film 14, for example, irradiating a laser, and the drawing step t is for drawing a special transfer pattern to be fixed to the pedestal 10. A blank mask U with a photoresist film. The twist measuring mechanism 12 is disposed at a predetermined distance from the surface of the blank mask u by, for example, an air cushion. Height measuring mechanism 12: Should be covered by 2 white cover! The height of the surface shape of 3 changes, and the height becomes a vertical movement. The change in the surface height (z direction) of the blank mask 13 can be measured. In addition, as a method of measuring the height of the surface, in addition to the above, a method for measuring the ash ash which is the same as the height measuring mechanism 丨2 in the vacant flow at the predetermined position may be used. The electrostatic capacity, the use of 144255.doc -12· 201027238 laser pulse count, optical focus, etc.
描繪資料作成機構15，係對應空白光罩13之描繪步驟中 膜面侧之形狀，與藉由該空白光罩13製作光罩時之曝光時 膜面侧之形狀之形狀變化，修正特定應描繪之轉印圖案形 狀之設計描續·資料，作成描繪資料。例如，描繪作成機構 15’基於顯示空白光罩13之自膜面形狀資料高度測定機構 12之二白光罩13之表面形狀而度變化之資料，與預先取得 之空白光罩13之臈面形狀資料，修正設計描繪資料，作成 用以以描繪機構11描繪之描繪資料。 再者，同前述，該描繪資料之修正，不僅在作成修正之 描緣資料時，當然亦可對描緣機具有之描緣座標系統，進 行反映前述資料之修正。 描緣機構U及高度測定機構12，都藉由保持在於χ方向 及y方向移動於台座10上之機構，可在與台座平行之面内 無圖示）。取代此，亦可具備固定描繪機構u及高度 ::機構12’使台座10於父方向及丫方向平行移動之機構， =亦可具備使料機構等與台座中之—方於χ方向，另一 ^方向移動，藉由相對㈣使騎機料移動至台座 上之期望的位置之機構。 圖2係描綠震置之台座1〇 圖。例如為與·垂直之面之…：罩13之剖面放大 薄配置於台：:空 因同前述之複數之要因而從理想平面變形之“2。之形狀， 以下’使用圖2藉由高度測定機構12,說明測定台㈣ 144255.d〇c -13. 201027238 上之空白光罩13表面形狀之變形之方法。以無變形之理想 平面情形下之空白光罩13之表面為基準表面21。特定的^ 定點22中，藉由高度測定機構12測定高度，以特定的間隔 Pitch重複其測定。將藉由高度測定機構12測定之高度^基 準表面21之差分作為空白面高度分佈資料。 空白面高度分佈資料與0之測定點（即高度與基準表面门 一致之測定點）鄰接之測定點中之空白面高度分佈資料為Η 時，藉由該高度之差異，空白光罩13之表面2〇與基準表面 21所成之角度Φ’ Φ充分小時，以下式表示： sinO=H/Pitch · ·. (式 1) 並且，前述中 之斜度。 H/Pitch亦可考慮空白光罩表 面之高度方向 再者，若Φ之值充分小，亦可近似為： 0=H/Pitch ... (式 Γ) 以下之說明中使用（式1)。 前述情形中’起因於該高度差異之測 、·^凋疋點之乂軸方向之 偏差d，一般可以下式求得： d=sin<E>xt/2=Hx(t/2Pitch) . . . ^ ^ 2) 再者’前述中’若φ充分小，則亦可近似為： d=Oxt/2=Hx(t/2Pitch) ·.. (式 2') 再者，此處t為空白光罩之厚度。 將前述測定在空白光罩13上之乂方& 方向、y方向，以特定間 隔Pitch進行，藉此可測定因各測定赴 點之表面形狀變化所引 起之測定點之偏差。 144255.doc 201027238 根據以上測定所得之結果中，如前述，認為包含G)台 座10不充分的平面度’（2)因台座1〇上之異物夾入所造成之 基板的挽曲’（3)空白光罩13之基板表面的凹凸，（4)空白 光罩13之基板背面凹凸之4個空白光罩表面形狀之自理想 平面之變形要因所造成之高度變化。 另一方面，於空白光罩轉印特定的轉印圖案所製作之光 罩的曝光裝置之使用例’以圖3表示。圖3係曝光裝置之概 念圖。光罩30’以支撐體31支撐兩端，膜面32向下設置。 ® 被轉印體33配置於光罩3〇之下。來自光源34之曝光用光從 光罩30之上照射，經由光罩30照射於被轉印體。 再者，實際支撐於曝光裝置内之光罩，因其自身重量而 撓曲。但因該撓曲之圖案座標偏差之補償機構搭載於曝光 裝置。 該狀態中，如前述，前述4個變形要因中，由於只殘留 (3)空白光罩13之基板表面（媒面32)之凹凸，⑴、（2)及（4) 參消失，因此不會影響圖案形成，據此，描繪時與曝光時之 膜面（圖案形成面）之形狀變化，成為前述（1)、（2)、（4)之 合計，起因與此之圖案座標偏差亦成為反應該變化部分 者。因此，描繪轉印圖案時，除去前述4個變形要因之偏 差中起因於（3)之偏差，只有起因於⑴、⑺及⑷之偏差部 分，有必要修正轉印圖案之設計描繪資料。 本發明中，預先取得關於（3)空白光罩之基板表面凹凸 之資料（空白光罩膜面之平面度資料）較有效。該資料，可 藉由將空白光罩垂直地g立，在排除因基板重量而挽曲之 i44255.doc -15· 201027238 狀態下，測定空白光罩之矣而取业品七β 早尤表面形狀而求得。測定可以一般 的光學測定方法進行。以該測定所求得之測定點之高度變 動（高度實測值與基準表面之差分）作為膜面形狀資料。若 膜面形狀資料為％，則起因於⑴、⑺及（4)之高度變動為 Η-Η,，根據式（2)，起因於⑴、⑺及⑷之偏差可以下式 求得。 d】=(H-Hi)xt/2Pitch · · · (式 3) 描繪資料作成機構15中，使用前述di修正轉印圖案之設 計描繪資料，作成描繪資料。基於該描繪資料使用描繪機 構11，於空白光罩13上之光阻膜描繪轉印圖案，進行顯影 等處理，因而可於空白光罩13上之光阻膜轉印特定的轉印 圖案。以該光阻膜作為遮罩，蝕刻薄膜丨4，因而可得到光 罩。 (實施例） 以下，就本發明之實施例進行說明。 準備厚度13 mm ’大小1220 mm><1400 mm之玻璃基板， 於該基板上’以1250 A膜厚形成以Cr為主成份的遮光膜， 製作空白光罩。 前述玻璃基板’係於垂直豎立狀態下藉由通常的光學測 定’以特定的間隔測定遮光膜形成面側之表面形狀，得到 各測定點之膜面形狀資料者。遮光膜係藉由濺鍍法成 膜’於Cr膜表面部分形成具有抗反射機能之cr〇者。 再者，亦可將前述空白光罩之膜面側之表面形狀如前述 地測定。 144255.doc -16- 201027238 接者’將藉由毛細管塗布機㈣光膜上塗布膜厚綱腿 之正型光阻膜之空白光罩，於圖1所示之描繪裝置，以使 形成遮光膜之面向上地配置。藉由該描㈣置所具有之高 度測㈣構12 ’以特定間隔進行高度變動之敎，得到各 測定點之空白面高度分佈資料Η。敎點以與垂直豎立進 行之表面形狀測定相同之點進行。 求得各測定點之高度變動差分叫，以三維圖表表示其 刀佈之圖如圖4所示〇 ❹The drawing data creating unit 15 corresponds to the shape of the film surface side in the drawing step of the blank mask 13 and the shape change of the shape of the film surface side during exposure when the mask is produced by the blank mask 13, and the specific drawing should be corrected. The design of the transfer pattern shape is described and the data is created. For example, the depiction creating mechanism 15' is based on the information showing the change in the surface shape of the white mask 13 from the film surface shape data height measuring mechanism 12 of the blank mask 13, and the shape data of the blank mask 13 obtained in advance. The design drawing data is corrected, and the drawing data drawn by the drawing mechanism 11 is created. Furthermore, as described above, the correction of the depiction data can be performed not only when the correction data is created, but also the correction of the aforementioned data by the trace coordinate system of the edge cutter. Both the edge-striking mechanism U and the height measuring mechanism 12 can be moved in the yaw direction and the y-direction to the pedestal 10, and can be displayed in a plane parallel to the pedestal. Instead of this, it is also possible to provide a fixed drawing mechanism u and a height: a mechanism for moving the pedestal 10 in the parent direction and the 丫 direction in parallel with the mechanism 12', and may also have a material feeding mechanism and the like in the pedestal direction, and A mechanism that moves in a direction to move the rider to a desired position on the pedestal by relative (4). Figure 2 is a diagram of the pedestal of the green earthquake. For example, the surface perpendicular to the surface of the cover: the cover 13 is enlarged and thinly arranged on the table: the shape of the space due to the complex number as described above, and the shape of the shape is changed from the ideal plane, and the following is measured by height using FIG. The mechanism 12 is a method for explaining the deformation of the surface shape of the blank mask 13 on the measuring station (4) 144255.d〇c -13. 201027238. The surface of the blank mask 13 in the case of an ideal plane without deformation is the reference surface 21. Specific In the fixed point 22, the height is measured by the height measuring means 12, and the measurement is repeated at a specific interval Pitch. The difference between the height ^ reference surface 21 measured by the height measuring means 12 is used as the blank surface height distribution data. When the distribution data and the measurement point of 0 (that is, the measurement point whose height is coincident with the reference surface gate) are adjacent to the measurement point, the blank surface height distribution data is Η, and the surface of the blank mask 13 is The angle Φ' Φ formed by the reference surface 21 is sufficiently small, and the following expression is expressed by: sinO = H / Pitch · (1) and the slope of the foregoing. H/Pitch can also consider the height direction of the blank mask surface.Further, if the value of Φ is sufficiently small, it can be approximated as: 0 = H / Pitch (Expression Γ) In the following description, (Formula 1) is used. In the above case, 'causes from the measurement of the height difference, The deviation d of the axis direction of the withering point can be obtained by the following formula: d=sin<E>xt/2=Hx(t/2Pitch) . . . ^ ^ 2) Again, the 'previously' if φ If it is sufficiently small, it can be approximated as: d=Oxt/2=Hx(t/2Pitch) ·.. (Expression 2') Here, t is the thickness of the blank mask. The above measurement is performed in the blank mask 13 In the upper direction & direction and y direction, the pitch is measured at a specific interval, thereby measuring the deviation of the measurement point caused by the change in the surface shape of each measurement point. 144255.doc 201027238 According to the above measurement results, As described above, it is considered that the G) pedestal 10 has insufficient flatness '(2) the bending of the substrate caused by the foreign matter on the pedestal 1 '' (3) the unevenness of the substrate surface of the blank mask 13 (4) The shape of the surface of the four blank masks of the blank mask 13 on the back surface of the blank mask 13 is changed from the ideal plane due to the height change. On the other hand, in the blank mask A use example of an exposure apparatus for transferring a photomask made of a specific transfer pattern is shown in Fig. 3. Fig. 3 is a conceptual diagram of an exposure apparatus. The photomask 30' supports both ends with a support 31, and the film surface 32 is downward. The transfer body 33 is disposed under the mask 3. The exposure light from the light source 34 is irradiated from the mask 30 and irradiated onto the object to be transferred via the mask 30. Further, the actual support is exposed. The reticle within the device flexes due to its own weight. However, the compensation mechanism for the deviation of the pattern of the deflection is mounted on the exposure device. In this state, as described above, since only the concave and convex portions of the substrate surface (media surface 32) of the blank mask 13 remain (3), (2), (2), and (4) disappear, the above-mentioned four deformation factors do not disappear. In response to the pattern formation, the shape of the film surface (pattern forming surface) at the time of drawing and exposure is changed to become the total of the above (1), (2), and (4), and the deviation from the pattern coordinates is also reversed. Some of them should be changed. Therefore, when the transfer pattern is drawn, the deviation of the above four deformation factors is caused by the deviation of (3), and it is only necessary to correct the design drawing data of the transfer pattern due to the deviation portions of (1), (7), and (4). In the present invention, it is effective to obtain in advance information on the surface unevenness of the substrate of the blank mask (the flatness data of the blank mask film surface). According to the i44255.doc -15· 201027238 state in which the blank mask is unobstructed, the blank mask is taken up, and the blank mask is measured and the surface of the blank is taken. And ask for it. The measurement can be carried out by a general optical measurement method. The height change of the measurement point (the difference between the height measured value and the reference surface) obtained by the measurement was taken as the film surface shape data. When the film surface shape data is %, the height variation due to (1), (7), and (4) is Η-Η, and the deviation due to (1), (7), and (4) can be obtained by the following formula according to the formula (2). d]=(H-Hi)xt/2Pitch · (Expression 3) In the drawing data creating unit 15, the design drawing data of the di correction transfer pattern is used to create a drawing material. The drawing means 11 is used to draw a transfer pattern on the photoresist film on the blank mask 13 based on the drawing data, and processing such as development is performed, whereby a specific transfer pattern can be transferred to the photoresist film on the blank mask 13. With the photoresist film as a mask, the film stack 4 is etched, and thus a mask can be obtained. (Embodiment) Hereinafter, an embodiment of the present invention will be described. A glass substrate having a thickness of 13 mm ‘size 1220 mm>< 1400 mm was prepared, and a light-shielding film containing Cr as a main component was formed on the substrate by a film thickness of 1250 A to prepare a blank mask. The glass substrate is subjected to measurement of the surface shape of the light-shielding film formation surface at a predetermined interval by a normal optical measurement in a state of vertical erecting, and the film surface shape of each measurement point is obtained. The light-shielding film is formed by sputtering to form a cr〇 having anti-reflection function on the surface portion of the Cr film. Further, the surface shape of the film surface side of the blank mask may be measured as described above. 144255.doc -16- 201027238 The receiver will use a blank mask of a positive-type resist film coated with a film-thick leg on the film of the capillary coater (4) to form a light-shielding film in the drawing device shown in FIG. The face-up configuration. The height of the blank surface height distribution data of each measurement point is obtained by the height measurement of the height (4) of the drawing (4). The defect is performed at the same point as the surface shape measurement performed vertically. The height variation difference of each measurement point is obtained, and the diagram of the knife cloth is represented by a three-dimensional graph as shown in Fig. 4
圖4中，橫向係空白光罩表面之雄方向縱向係乂轴方 向，深度係空白光罩之厚度方向。圖4中，區域mi係高度 變動之差分Η-Η% μιη〜1〇 μιη之區域。同樣，區域河2係〇 μιη〜5 μιη之區域，區域1^13係_5 μιη〜〇 μιη之區域，區域Μ4 係-10 μπι〜-5 μιη之區域，區域]^15係_15 μιη〜_1〇 μιη之區 域。由圖4可知，空白光罩之中央附近，高度變動之差分 變化較少’越朝y轴方向兩端’變化變得越急劇。 其次’於該空白光罩使用以特定間隔配置圖案之設計描 繪資料，不修正地進行描繪。其圖案之座標測定結果與設 計描緣資料之偏差以圖5表示。圖5中’橫向為X軸方向， 縱向為y轴方向。另，白圓為描繪之圖案實測資料，黑圓 為s又β十描繪資料。由圖5可知，空白光罩之中央附近，因 實測資料與設計描繪資料之偏差較小’故黑圓部分幾乎未 殘留’但y軸方向之兩端因偏差較大，故黑圓部分比較多 地殘留。 如上，比較圖4及圖5可知，確認在圖4所求得之高度變 144255.doc 201027238 動之差分H-H丨，與描繪之實測資料之自設計描繪資料之偏 差相關。據此，描繪轉印圖案時，除了 4個變形要因之偏 差中起因於在曝光裝置中使用光罩時亦殘留之空白光罩 13之基板表面之凹凸之偏差以外’藉由只有起因於（丨）台座 10之平面度，（2)台座10上之因異物夾雜入之基板之撓曲及 (4)空白光罩13之基板背面之凹凸之偏差部分，修正轉印圖 案之設計描繪資料，作成描繪資料，確認可使實際形成於 光罩之轉印圖案與设计描缯"資料之偏差減少。 再者’前述光罩之製造方法亦可轉用於光罩之檢查方 法。即，於檢查機（使用圖1所示之描綠裝置之記號說明）之 台座10上，將光罩以膜面（圖案形成面）朝上配置以高度 測定機構12與前述同樣地，得到光罩之遮罩面高度分佈資 料。該遮罩面高度分佈資料中，與前述空白面高度分佈資 料同樣，包含因自理想平面之4個變形要因所造成之表面 形狀之變形。接著，測量該光罩之圖案形狀之長度得到 圖案測長資料。該圖案測長資料中，包含因4個變形要因 之表面形狀之變形所引起之偏差。 再者，以垂直豎立光罩之狀態料光罩的膜面之表面 狀，藉而求得該光罩之膜面凹凸，作為膜面形狀資料。 定可以—般的光學測定方法進行。該膜面形狀資料同 述，包含（3)光罩表面之凹凸所引起之表面形狀之變形。 者，該膜面形狀資料係於光罩製造前之階段(空白光罩 基板之階段）得到，亦可使用前述膜面形狀資料。 藉由自前述遮罩面高度分佈資料減去膜面形狀資料 144255.doc •18· 201027238 值，使用（式3)修正圖案測長資料，而可計算實際於曝光裝 置中使用該光罩時之圖案形狀。藉由比較該修正後之圖案 測長資料與圖案之設計描繪資料，可估計該光罩之實際之 偏差，而可評估光罩。例如可在只有偏差在特定範圍^内 之情況下’將該光罩視為合格品。 或，可藉由自遮罩面高度分佈資料減去膜面形狀資料之 值，使用（式3)修正圖案之設計描緣資料。藉由比較該修正 後之设sf描繪資料與前述圖案測長資料，可評估光罩。 再者，本發明不限於前述實施形態，可適宜變更而實 施。例如，前述實施形態中，雖顯示雷射束作為描繪裝置 之描繪機構，但不限於此，亦可以是電子束等能量射束。 另’作為光罩，冑就形成一層遮光膜作為薄膜者進行說 明，但除遮光膜外亦可以是具有半透光膜之多階光罩。該 情形時，僅依必要的轉印圖案數，重複進行光阻膜形成、 描緣步驟、钱刻步驟。 般而〇在必須進行二次以上光微影步驟之光罩製造 過輕中，㈣二次圖案化而使對準偏差成為大問題。但， 若將本發明之⑽資料之修正使用於每複數次描緣步驟， 則曝光該光罩JU㈣案轉印於被轉印㈣之圖案相互之對 準可非常正確地進行，故較為適宜。，對於形成於基板 上、具有複數遮光膜之空白光罩，進行複數次描緣、抗蝕 顯影、薄膜㈣’最終呈具有期望的轉㈣案之光罩時， 每次描繪可適用本發明之描繪方法/描繪裝置。 此時，第1次描繪與第2次描繪中，由於空白膜面之變形 i44255.doc -19· 201027238 要因不同，因此描繪資料之修正亦不同。然後，結果，經 過該2-入描繪所形成之光罩之1個轉印圖案，對被轉印體正 確形成期望的圖案。 再者’每個檢查步驟亦可適用本發明之檢查方法/檢查 裝置。 另别述實施形態之材料、尺寸、處理步驟等係一例， 可作各種變更而實施。 【圖式簡單說明】 圖1係顯示本發明之實施形態之描繪裝置之外觀圖； 圖2係顯示本發明之實施形態之空白光罩之剖面圖； 圖3係顯示使用本發明之實施形態之光罩之曝光裝置之 外觀圖； 圖4係顯示本發明之實施形態之空白光罩表面之高度變 動之分佈圖；及 圖5係顯示本發明之實施形態之實測資料與設計描繪資 料之偏差之圖。 【主要元件符號說明】 10 台座 11 描繪機構 12 高度測定機構 13 空白光罩 14 薄膜 15 描繪資料作成機構 20 空白光罩之表面 144255.doc -20· 201027238 21 基準表面 22 測定點 30 光罩 31 支撐體 32 膜面 33 被轉印體 34 光源 Ml 〜M5 區域 參In Fig. 4, the male direction of the lateral blank mask surface is in the longitudinal direction of the 乂 axis, and the depth is the thickness direction of the blank mask. In Fig. 4, the region of the region mi is a variation of the height Η-Η% μιη~1〇 μιη. Similarly, the region of the river 2 is 〇μιη~5 μιη, the region 1^13 is _5 μιη~〇μιη, the region Μ4 is -10 μπι~-5 μιη, region]^15系_15 μιη~ _1〇μιη area. As is apparent from Fig. 4, in the vicinity of the center of the blank mask, the variation in the difference in height variation is small, and the change in the both ends in the y-axis direction becomes steeper. Next, in the blank mask, design drawing materials in which patterns are arranged at specific intervals are used, and the drawing is performed without correction. The deviation between the coordinate measurement result of the pattern and the design description data is shown in Fig. 5. In Fig. 5, the lateral direction is the X-axis direction and the longitudinal direction is the y-axis direction. In addition, the white circle is the actual measured data of the depiction, and the black circle is the data of s and β. As can be seen from Fig. 5, in the vicinity of the center of the blank mask, the deviation between the measured data and the design data is small, so the black circle portion is hardly left, but the two ends of the y-axis direction are large, so the black circle portion is relatively large. Ground residue. As described above, comparing Fig. 4 and Fig. 5, it is confirmed that the difference H-H丨 of the height change 144255.doc 201027238 obtained in Fig. 4 is related to the deviation of the self-designed drawing data of the actual measured data. Accordingly, when the transfer pattern is drawn, the deviation of the four deformation factors is caused by the deviation of the unevenness of the surface of the substrate of the blank mask 13 which remains when the mask is used in the exposure apparatus. The flatness of the pedestal 10, (2) the deflection of the substrate on which the foreign matter is interposed on the pedestal 10, and (4) the deviation of the unevenness of the back surface of the substrate of the blank mask 13, correcting the design and drawing data of the transfer pattern, and creating Depicting the data, it is confirmed that the deviation between the transfer pattern actually formed in the mask and the design trace can be reduced. Furthermore, the method of manufacturing the photomask described above can also be used in the inspection method of the photomask. In other words, in the pedestal 10 of the inspection machine (indicated by the symbol of the greening device shown in FIG. 1), the mask is placed on the film surface (pattern forming surface) upward, and the height measuring mechanism 12 is obtained in the same manner as described above. The mask height distribution data of the cover. The mask surface height distribution data, like the blank surface height distribution data, includes deformation of the surface shape due to four deformation factors from the ideal plane. Next, the length of the pattern shape of the mask is measured to obtain pattern length measurement data. The pattern length measurement data includes variations due to deformation of the surface shape of the four deformation factors. Further, the surface of the film surface of the reticle was placed in a state in which the reticle was vertically erected, and the film surface irregularities of the reticle were obtained as the film surface shape data. It can be done by a general optical measurement method. The film surface shape data is the same as that of (3) the deformation of the surface shape caused by the unevenness of the surface of the mask. The film shape data is obtained at the stage before the reticle is manufactured (the stage of the blank reticle substrate), and the film surface shape data can also be used. By subtracting the film surface shape data 144255.doc •18· 201027238 from the mask surface height distribution data, the pattern length measurement data is corrected using (Formula 3), and the actual use of the mask in the exposure apparatus can be calculated. Pattern shape. By comparing the modified pattern length measurement data with the design of the pattern, the actual deviation of the mask can be estimated, and the mask can be evaluated. For example, the photomask can be regarded as a good product only if the deviation is within a specific range. Alternatively, the design profile data of the pattern can be corrected by using (Formula 3) by subtracting the value of the film surface shape data from the mask height distribution data. The reticle can be evaluated by comparing the corrected sf drawing data with the aforementioned pattern length measuring data. Further, the present invention is not limited to the above embodiment, and can be modified as appropriate. For example, in the above embodiment, the laser beam is used as the drawing means of the drawing device. However, the present invention is not limited thereto, and may be an energy beam such as an electron beam. Further, as a photomask, a light-shielding film is formed as a film, but a multi-step mask having a semi-transmissive film may be used in addition to the light-shielding film. In this case, the formation of the photoresist film, the step of striking, and the step of engraving are repeated only in accordance with the number of necessary transfer patterns. As a general rule, the reticle that has to perform the second or higher photolithography step is too light, and (4) the secondary patterning causes the alignment deviation to become a big problem. However, if the correction of the document (10) of the present invention is used for each of the plurality of stroke steps, it is preferable to expose the mask JU (four) and transfer the pattern of the transfer (four) to each other so that the alignment can be performed very accurately. When a blank mask having a plurality of light-shielding films formed on a substrate is subjected to a plurality of strokes, resist development, and a film (4) is finally formed into a mask having a desired rotation (fourth), the present invention can be applied to each drawing. Delineation method/drawing device. At this time, in the first drawing and the second drawing, since the deformation of the blank film surface is different, the correction of the drawing data is different. Then, as a result, one transfer pattern of the photomask formed by the 2-input drawing is formed, and a desired pattern is correctly formed on the transfer target. Further, the inspection method/inspection device of the present invention can also be applied to each inspection step. The materials, dimensions, processing steps, and the like of the embodiments are examples, and can be implemented in various modifications. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a drawing device according to an embodiment of the present invention; Fig. 2 is a cross-sectional view showing a blank mask according to an embodiment of the present invention; and Fig. 3 is a view showing an embodiment using the present invention. FIG. 4 is a view showing a distribution of height variations of a surface of a blank mask according to an embodiment of the present invention; and FIG. 5 is a view showing deviation between measured data and design drawing data of an embodiment of the present invention. Figure. [Main component symbol description] 10 pedestal 11 drawing mechanism 12 height measuring mechanism 13 blank mask 14 film 15 drawing data forming mechanism 20 surface of blank mask 144255.doc -20· 201027238 21 reference surface 22 measuring point 30 mask 31 support Body 32 film surface 33 by transfer body 34 light source Ml ~ M5 area reference
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