TWI406417B - Ｔｆｔ（薄膜電晶體）及利用其之ｔｆｔ基材，製造ｔｆｔ基材的方法及液晶顯示器 - Google Patents
Ｔｆｔ（薄膜電晶體）及利用其之ｔｆｔ基材，製造ｔｆｔ基材的方法及液晶顯示器 Download PDFInfo
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- TWI406417B TWI406417B TW095125658A TW95125658A TWI406417B TW I406417 B TWI406417 B TW I406417B TW 095125658 A TW095125658 A TW 095125658A TW 95125658 A TW95125658 A TW 95125658A TW I406417 B TWI406417 B TW I406417B
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- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims description 11
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 7
- 239000010409 thin film Substances 0.000 title description 3
- 238000005286 illumination Methods 0.000 claims abstract description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 39
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 34
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- 229920002098 polyfluorene Polymers 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 30
- 239000010408 film Substances 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 8
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- 230000001965 increasing effect Effects 0.000 description 4
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- 238000000151 deposition Methods 0.000 description 2
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- 239000011229 interlayer Substances 0.000 description 2
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- 210000001747 pupil Anatomy 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
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- 230000002452 interceptive effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13318—Circuits comprising a photodetector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
- G02F1/13332—Front frames
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/58—Arrangements comprising a monitoring photodetector
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050063870A KR101200444B1 (ko) | 2005-07-14 | 2005-07-14 | 박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200709428A TW200709428A (en) | 2007-03-01 |
| TWI406417B true TWI406417B (zh) | 2013-08-21 |
Family
ID=37609750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095125658A TWI406417B (zh) | 2005-07-14 | 2006-07-13 | Ｔｆｔ（薄膜電晶體）及利用其之ｔｆｔ基材，製造ｔｆｔ基材的方法及液晶顯示器 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7821006B2 (enExample) |
| JP (1) | JP2007027704A (enExample) |
| KR (1) | KR101200444B1 (enExample) |
| CN (1) | CN1897309B (enExample) |
| TW (1) | TWI406417B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050112878A (ko) * | 2004-05-28 | 2005-12-01 | 삼성전자주식회사 | 전기 영동 표시 장치 |
| DE102007057089B4 (de) * | 2006-12-22 | 2010-04-29 | Lg Display Co., Ltd. | Flüssigkristallanzeige mit Photosensor und Herstellungsverfahren derselben |
| KR101362959B1 (ko) * | 2007-03-30 | 2014-02-13 | 엘지디스플레이 주식회사 | 센싱기능을 가지는 액정표시장치 및 그의 제조방법 |
| KR101419221B1 (ko) * | 2007-06-19 | 2014-07-15 | 엘지디스플레이 주식회사 | 액정표시장치의 광센서 및 그의 제조방법 |
| US20100128010A1 (en) * | 2007-07-13 | 2010-05-27 | Sharp Kabushiki Kaisha | Liquid crystal display device and method for driving the same |
| CN101465359B (zh) * | 2007-12-17 | 2010-09-01 | 瀚宇彩晶股份有限公司 | 具有光敏薄膜晶体管的大型光传感器 |
| JP5439723B2 (ja) * | 2008-01-22 | 2014-03-12 | セイコーエプソン株式会社 | 薄膜トランジスタ、マトリクス基板、電気泳動表示装置および電子機器 |
| TWI409537B (zh) | 2008-04-03 | 2013-09-21 | Innolux Corp | 液晶面板及採用該液晶面板之液晶顯示裝置 |
| CN101556395B (zh) * | 2008-04-09 | 2011-02-16 | 群康科技(深圳)有限公司 | 液晶面板和液晶显示器 |
| TWI368988B (en) | 2008-08-12 | 2012-07-21 | Chunghwa Picture Tubes Ltd | Photo sensor and portable electronic apparatus |
| WO2011096276A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| CN103840009B (zh) * | 2012-11-26 | 2016-07-27 | 瀚宇彩晶股份有限公司 | 像素结构 |
| JP2016029719A (ja) * | 2014-07-17 | 2016-03-03 | 出光興産株式会社 | 薄膜トランジスタ |
| KR102223678B1 (ko) * | 2014-07-25 | 2021-03-08 | 삼성디스플레이 주식회사 | 표시장치용 백플레인 및 그 제조 방법 |
| JP6662665B2 (ja) | 2015-03-19 | 2020-03-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び該液晶表示装置を用いた電子機器 |
| KR102483953B1 (ko) * | 2015-10-16 | 2023-01-03 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 및 이를 구비한 유기 발광 표시 장치 |
| US10330993B2 (en) | 2016-12-23 | 2019-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR102669704B1 (ko) * | 2018-12-04 | 2024-05-28 | 삼성디스플레이 주식회사 | 표시 모듈 및 이를 포함한 표시 장치 제조 방법 |
| KR102688295B1 (ko) * | 2019-07-22 | 2024-07-25 | 엘지디스플레이 주식회사 | 디스플레이 패널 및 디스플레이 장치 |
| CN110649101B (zh) | 2019-10-18 | 2022-04-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
| WO2025137806A1 (zh) * | 2023-12-25 | 2025-07-03 | 京东方科技集团股份有限公司 | 显示基板、显示面板、显示装置和背光调节方法 |
Citations (3)
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| TW200512708A (en) * | 2003-09-25 | 2005-04-01 | Hitachi Displays Ltd | Display panel and method for manufacturing the same |
| US20050082968A1 (en) * | 2003-10-15 | 2005-04-21 | Samsung Electronics Co., Ltd. | Display apparatus having photo sensor |
| US6897477B2 (en) * | 2001-06-01 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
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| US3714522A (en) * | 1968-11-14 | 1973-01-30 | Kogyo Gijutsuin Agency Of Ind | Semiconductor device having surface electric-field effect |
| JP2938083B2 (ja) | 1989-02-16 | 1999-08-23 | 株式会社日立製作所 | 薄膜トランジスタおよびそれを用いた光センサ |
| JPH04158580A (ja) | 1990-10-22 | 1992-06-01 | Sanyo Electric Co Ltd | 多結晶シリコン薄膜トランジスタ |
| JPH04254820A (ja) | 1991-02-06 | 1992-09-10 | Fujitsu Ltd | 液晶表示装置 |
| JP4044187B2 (ja) * | 1997-10-20 | 2008-02-06 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその作製方法 |
| JP4159712B2 (ja) | 1998-11-17 | 2008-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末 |
| US6384427B1 (en) * | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| GB0014962D0 (en) | 2000-06-20 | 2000-08-09 | Koninkl Philips Electronics Nv | Matrix array display devices with light sensing elements and associated storage capacitors |
| JP2003229578A (ja) | 2001-06-01 | 2003-08-15 | Semiconductor Energy Lab Co Ltd | 半導体装置、表示装置およびその作製方法 |
| JP5038560B2 (ja) | 2001-08-01 | 2012-10-03 | ゲットナー・ファンデーション・エルエルシー | 電界効果型トランジスタ及びその製造方法並びに該トランジスタを使った液晶表示装置及びその製造方法 |
| KR100878217B1 (ko) | 2001-08-28 | 2009-01-14 | 삼성전자주식회사 | 액정표시장치 및 이의 구동 방법 |
| KR100746283B1 (ko) * | 2002-01-25 | 2007-08-03 | 삼성전자주식회사 | 액정표시장치 |
| JP3720014B2 (ja) * | 2002-11-01 | 2005-11-24 | 日本テキサス・インスツルメンツ株式会社 | 固体撮像装置 |
| JP2004241487A (ja) * | 2003-02-04 | 2004-08-26 | Sharp Corp | 固体撮像素子の製造方法 |
| JP2004342923A (ja) | 2003-05-16 | 2004-12-02 | Seiko Epson Corp | 液晶装置、アクティブマトリクス基板、表示装置、及び電子機器 |
| US6870323B1 (en) * | 2003-10-02 | 2005-03-22 | Eastman Kodak Company | Color display with white light emitting elements |
| KR100923025B1 (ko) | 2003-10-23 | 2009-10-22 | 삼성전자주식회사 | 광감지 소자와, 이를 갖는 어레이 기판 및 액정 표시 장치 |
| JP4168979B2 (ja) * | 2004-06-03 | 2008-10-22 | セイコーエプソン株式会社 | 光センサ回路、光センサ回路の出力信号処理方法および電子機器 |
-
2005
- 2005-07-14 KR KR1020050063870A patent/KR101200444B1/ko not_active Expired - Lifetime
-
2006
- 2006-06-16 JP JP2006167923A patent/JP2007027704A/ja active Pending
- 2006-07-13 TW TW095125658A patent/TWI406417B/zh not_active IP Right Cessation
- 2006-07-13 CN CN2006101058838A patent/CN1897309B/zh not_active Expired - Fee Related
- 2006-07-14 US US11/486,606 patent/US7821006B2/en active Active
-
2010
- 2010-09-27 US US12/891,598 patent/US8541811B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6897477B2 (en) * | 2001-06-01 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
| TW200512708A (en) * | 2003-09-25 | 2005-04-01 | Hitachi Displays Ltd | Display panel and method for manufacturing the same |
| US20050082968A1 (en) * | 2003-10-15 | 2005-04-21 | Samsung Electronics Co., Ltd. | Display apparatus having photo sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| US7821006B2 (en) | 2010-10-26 |
| US20110013113A1 (en) | 2011-01-20 |
| JP2007027704A (ja) | 2007-02-01 |
| TW200709428A (en) | 2007-03-01 |
| US20070013823A1 (en) | 2007-01-18 |
| CN1897309A (zh) | 2007-01-17 |
| KR20070009906A (ko) | 2007-01-19 |
| CN1897309B (zh) | 2011-02-09 |
| US8541811B2 (en) | 2013-09-24 |
| KR101200444B1 (ko) | 2012-11-12 |
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