JP2007027704A - 薄膜トランジスタ、薄膜トランジスタ基板、その製造方法、液晶表示装置、及び表示装置。 - Google Patents

薄膜トランジスタ、薄膜トランジスタ基板、その製造方法、液晶表示装置、及び表示装置。 Download PDF

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Publication number
JP2007027704A
JP2007027704A JP2006167923A JP2006167923A JP2007027704A JP 2007027704 A JP2007027704 A JP 2007027704A JP 2006167923 A JP2006167923 A JP 2006167923A JP 2006167923 A JP2006167923 A JP 2006167923A JP 2007027704 A JP2007027704 A JP 2007027704A
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JP
Japan
Prior art keywords
thin film
film transistor
region
display device
gate electrode
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Pending
Application number
JP2006167923A
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English (en)
Japanese (ja)
Other versions
JP2007027704A5 (enExample
Inventor
Kwan-Wook Jung
寛 旭 鄭
Woong Sik Kim
雄 植 金
Pil-Mo Choi
弼 模 崔
Seock-Cheon Song
錫 天 宋
Ho-Suk Maeng
ホソク 孟
Sang Hoon Lee
相 勳 李
Keun-Woo Park
根 佑 朴
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007027704A publication Critical patent/JP2007027704A/ja
Publication of JP2007027704A5 publication Critical patent/JP2007027704A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
    • G02F1/13332—Front frames
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/58—Arrangements comprising a monitoring photodetector

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
JP2006167923A 2005-07-14 2006-06-16 薄膜トランジスタ、薄膜トランジスタ基板、その製造方法、液晶表示装置、及び表示装置。 Pending JP2007027704A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050063870A KR101200444B1 (ko) 2005-07-14 2005-07-14 박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치

Publications (2)

Publication Number Publication Date
JP2007027704A true JP2007027704A (ja) 2007-02-01
JP2007027704A5 JP2007027704A5 (enExample) 2009-07-30

Family

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Family Applications (1)

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JP2006167923A Pending JP2007027704A (ja) 2005-07-14 2006-06-16 薄膜トランジスタ、薄膜トランジスタ基板、その製造方法、液晶表示装置、及び表示装置。

Country Status (5)

Country Link
US (2) US7821006B2 (enExample)
JP (1) JP2007027704A (enExample)
KR (1) KR101200444B1 (enExample)
CN (1) CN1897309B (enExample)
TW (1) TWI406417B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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JP2009176828A (ja) * 2008-01-22 2009-08-06 Seiko Epson Corp 薄膜トランジスタ、マトリクス基板、電気泳動表示装置および電子機器
JP2016029719A (ja) * 2014-07-17 2016-03-03 出光興産株式会社 薄膜トランジスタ

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KR20050112878A (ko) * 2004-05-28 2005-12-01 삼성전자주식회사 전기 영동 표시 장치
DE102007057089B4 (de) * 2006-12-22 2010-04-29 Lg Display Co., Ltd. Flüssigkristallanzeige mit Photosensor und Herstellungsverfahren derselben
KR101362959B1 (ko) * 2007-03-30 2014-02-13 엘지디스플레이 주식회사 센싱기능을 가지는 액정표시장치 및 그의 제조방법
KR101419221B1 (ko) * 2007-06-19 2014-07-15 엘지디스플레이 주식회사 액정표시장치의 광센서 및 그의 제조방법
US20100128010A1 (en) * 2007-07-13 2010-05-27 Sharp Kabushiki Kaisha Liquid crystal display device and method for driving the same
CN101465359B (zh) * 2007-12-17 2010-09-01 瀚宇彩晶股份有限公司 具有光敏薄膜晶体管的大型光传感器
TWI409537B (zh) 2008-04-03 2013-09-21 Innolux Corp 液晶面板及採用該液晶面板之液晶顯示裝置
CN101556395B (zh) * 2008-04-09 2011-02-16 群康科技(深圳)有限公司 液晶面板和液晶显示器
TWI368988B (en) 2008-08-12 2012-07-21 Chunghwa Picture Tubes Ltd Photo sensor and portable electronic apparatus
WO2011096276A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN103840009B (zh) * 2012-11-26 2016-07-27 瀚宇彩晶股份有限公司 像素结构
KR102223678B1 (ko) 2014-07-25 2021-03-08 삼성디스플레이 주식회사 표시장치용 백플레인 및 그 제조 방법
JP6662665B2 (ja) 2015-03-19 2020-03-11 株式会社半導体エネルギー研究所 液晶表示装置及び該液晶表示装置を用いた電子機器
KR102483953B1 (ko) * 2015-10-16 2023-01-03 삼성디스플레이 주식회사 박막트랜지스터 기판 및 이를 구비한 유기 발광 표시 장치
US10330993B2 (en) 2016-12-23 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102669704B1 (ko) * 2018-12-04 2024-05-28 삼성디스플레이 주식회사 표시 모듈 및 이를 포함한 표시 장치 제조 방법
KR102688295B1 (ko) * 2019-07-22 2024-07-25 엘지디스플레이 주식회사 디스플레이 패널 및 디스플레이 장치
CN110649101B (zh) * 2019-10-18 2022-04-15 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
CN120660033A (zh) * 2023-12-25 2025-09-16 京东方科技集团股份有限公司 显示基板、显示面板、显示装置和背光调节方法

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JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176828A (ja) * 2008-01-22 2009-08-06 Seiko Epson Corp 薄膜トランジスタ、マトリクス基板、電気泳動表示装置および電子機器
JP2016029719A (ja) * 2014-07-17 2016-03-03 出光興産株式会社 薄膜トランジスタ

Also Published As

Publication number Publication date
US8541811B2 (en) 2013-09-24
US7821006B2 (en) 2010-10-26
KR20070009906A (ko) 2007-01-19
CN1897309B (zh) 2011-02-09
KR101200444B1 (ko) 2012-11-12
CN1897309A (zh) 2007-01-17
TW200709428A (en) 2007-03-01
US20110013113A1 (en) 2011-01-20
US20070013823A1 (en) 2007-01-18
TWI406417B (zh) 2013-08-21

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