CN1897309B - 薄膜晶体管和基板及基板的制造方法和液晶显示器 - Google Patents
薄膜晶体管和基板及基板的制造方法和液晶显示器 Download PDFInfo
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- CN1897309B CN1897309B CN2006101058838A CN200610105883A CN1897309B CN 1897309 B CN1897309 B CN 1897309B CN 2006101058838 A CN2006101058838 A CN 2006101058838A CN 200610105883 A CN200610105883 A CN 200610105883A CN 1897309 B CN1897309 B CN 1897309B
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
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- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/58—Arrangements comprising a monitoring photodetector
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR63870/05 | 2005-07-14 | ||
KR1020050063870A KR101200444B1 (ko) | 2005-07-14 | 2005-07-14 | 박막트랜지스터와 이를 이용한 박막트랜지스터 기판 및 그제조방법 및 액정표시장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1897309A CN1897309A (zh) | 2007-01-17 |
CN1897309B true CN1897309B (zh) | 2011-02-09 |
Family
ID=37609750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101058838A Expired - Fee Related CN1897309B (zh) | 2005-07-14 | 2006-07-13 | 薄膜晶体管和基板及基板的制造方法和液晶显示器 |
Country Status (5)
Country | Link |
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US (2) | US7821006B2 (zh) |
JP (1) | JP2007027704A (zh) |
KR (1) | KR101200444B1 (zh) |
CN (1) | CN1897309B (zh) |
TW (1) | TWI406417B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050112878A (ko) * | 2004-05-28 | 2005-12-01 | 삼성전자주식회사 | 전기 영동 표시 장치 |
DE102007057089B4 (de) * | 2006-12-22 | 2010-04-29 | Lg Display Co., Ltd. | Flüssigkristallanzeige mit Photosensor und Herstellungsverfahren derselben |
KR101362959B1 (ko) * | 2007-03-30 | 2014-02-13 | 엘지디스플레이 주식회사 | 센싱기능을 가지는 액정표시장치 및 그의 제조방법 |
KR101419221B1 (ko) * | 2007-06-19 | 2014-07-15 | 엘지디스플레이 주식회사 | 액정표시장치의 광센서 및 그의 제조방법 |
CN101675375B (zh) * | 2007-07-13 | 2011-08-17 | 夏普株式会社 | 液晶显示装置和其驱动方法 |
CN101465359B (zh) * | 2007-12-17 | 2010-09-01 | 瀚宇彩晶股份有限公司 | 具有光敏薄膜晶体管的大型光传感器 |
JP5439723B2 (ja) * | 2008-01-22 | 2014-03-12 | セイコーエプソン株式会社 | 薄膜トランジスタ、マトリクス基板、電気泳動表示装置および電子機器 |
TWI409537B (zh) | 2008-04-03 | 2013-09-21 | Innolux Corp | 液晶面板及採用該液晶面板之液晶顯示裝置 |
CN101556395B (zh) * | 2008-04-09 | 2011-02-16 | 群康科技(深圳)有限公司 | 液晶面板和液晶显示器 |
TWI368988B (en) | 2008-08-12 | 2012-07-21 | Chunghwa Picture Tubes Ltd | Photo sensor and portable electronic apparatus |
WO2011096276A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
CN103840009B (zh) * | 2012-11-26 | 2016-07-27 | 瀚宇彩晶股份有限公司 | 像素结构 |
JP2016029719A (ja) * | 2014-07-17 | 2016-03-03 | 出光興産株式会社 | 薄膜トランジスタ |
KR102223678B1 (ko) | 2014-07-25 | 2021-03-08 | 삼성디스플레이 주식회사 | 표시장치용 백플레인 및 그 제조 방법 |
JP6662665B2 (ja) | 2015-03-19 | 2020-03-11 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び該液晶表示装置を用いた電子機器 |
KR102483953B1 (ko) * | 2015-10-16 | 2023-01-03 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 및 이를 구비한 유기 발광 표시 장치 |
US10330993B2 (en) | 2016-12-23 | 2019-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR102669704B1 (ko) * | 2018-12-04 | 2024-05-28 | 삼성디스플레이 주식회사 | 표시 모듈 및 이를 포함한 표시 장치 제조 방법 |
CN110649101B (zh) * | 2019-10-18 | 2022-04-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
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CN1434332A (zh) * | 2002-01-25 | 2003-08-06 | 三星电子株式会社 | 液晶显示设备 |
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US6897477B2 (en) * | 2001-06-01 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and display device |
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JPH04158580A (ja) | 1990-10-22 | 1992-06-01 | Sanyo Electric Co Ltd | 多結晶シリコン薄膜トランジスタ |
JPH04254820A (ja) | 1991-02-06 | 1992-09-10 | Fujitsu Ltd | 液晶表示装置 |
JP4044187B2 (ja) * | 1997-10-20 | 2008-02-06 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその作製方法 |
JP4159712B2 (ja) | 1998-11-17 | 2008-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末 |
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2005
- 2005-07-14 KR KR1020050063870A patent/KR101200444B1/ko active IP Right Grant
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- 2006-06-16 JP JP2006167923A patent/JP2007027704A/ja active Pending
- 2006-07-13 TW TW095125658A patent/TWI406417B/zh not_active IP Right Cessation
- 2006-07-13 CN CN2006101058838A patent/CN1897309B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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US20110013113A1 (en) | 2011-01-20 |
US7821006B2 (en) | 2010-10-26 |
TWI406417B (zh) | 2013-08-21 |
US20070013823A1 (en) | 2007-01-18 |
JP2007027704A (ja) | 2007-02-01 |
KR20070009906A (ko) | 2007-01-19 |
TW200709428A (en) | 2007-03-01 |
CN1897309A (zh) | 2007-01-17 |
US8541811B2 (en) | 2013-09-24 |
KR101200444B1 (ko) | 2012-11-12 |
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