TWI397191B - 高照度發光二極體及利用其之液晶顯示裝置 - Google Patents
高照度發光二極體及利用其之液晶顯示裝置 Download PDFInfo
- Publication number
- TWI397191B TWI397191B TW095141823A TW95141823A TWI397191B TW I397191 B TWI397191 B TW I397191B TW 095141823 A TW095141823 A TW 095141823A TW 95141823 A TW95141823 A TW 95141823A TW I397191 B TWI397191 B TW I397191B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid crystal
- display device
- light emitting
- crystal display
- substrate
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 60
- 239000000758 substrate Substances 0.000 claims description 91
- 235000012431 wafers Nutrition 0.000 claims description 52
- 239000010408 film Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 30
- 230000017525 heat dissipation Effects 0.000 claims description 29
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 108010043121 Green Fluorescent Proteins Proteins 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000012788 optical film Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 238000005286 illumination Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0068—Arrangements of plural sources, e.g. multi-colour light sources
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
- G02B6/0086—Positioning aspects
- G02B6/0088—Positioning aspects of the light guide or other optical sheets in the package
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/1701—Structure
- H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Liquid Crystal (AREA)
- Planar Illumination Modules (AREA)
Description
本發明係關於一種發光二極體(LED),並且具體而言,係關於一種能夠用作為一液晶顯示裝置之一背光之高照度LED。
可用作為電腦監視器或電視之顯示裝置類型包括:諸如發光二極體(LED)顯示器之自照明裝置、場致發光(EL)顯示器、真空螢光顯示器(VFD)、場發射顯示器(FED)或電漿顯示面板(PDP)。裝置類型亦包括需要額外光源之非自照明裝置,諸如,液晶顯示器(LCD)。
典型之液晶顯示裝置包含兩個顯示面板(在顯示面板上形成場產生電極)及一液晶層(其具有介電異向性(dielectric anisotropy)且係插入在該兩個顯示面板之間)。液晶顯示裝置施加一電壓至電場產生電極,以在該液晶層中產生一電場。為了調整該液晶層中之該電場而改變該施加之電壓,其調整通過該液晶層的光之透射度,使得顯示出一所要影像。
可從一人造光源或可從自然光來提供光線。
一種用於液晶顯示器的人造光源(諸如背光裝置)典型使用複數個螢光燈,諸如冷光陰極螢光燈管(CCFL)或外部外部電極螢光燈管,或可使用複數個LED作為光源。
在顯示裝置中,由於LED具有若干有利屬性,所以LED已成為作為下一代背光裝置之光源注目焦點。舉例而言,因為LED不使用水銀,故符合環保要求。此外,因為LED的結構穩定性而具有長使用期限。
但是,為了使用LED來產生白光,因而使用一發光晶片及一螢光單元。該螢光單元將該發光晶片發射之光轉換成一不同波長分佈。由於發射自一個發光晶片之光被轉換成各種波長光且用作為一光源,所以LED具有低整體照度之問題。
上文[先前技術]段落中揭示之資訊僅係為了加強對本發明背景之瞭解,並且因此其內容可包含不形成熟悉此項技術者本國已知的先前技術之資訊。
據此,本文描述之系統及技術提供一高照度LED。
根據本發明,提供複數個發光二極體,每一發光二極體包括:一基底基板,其具有上表面及下表面;複數個發光晶片,其被佈置在該基底基板之該上表面上且彼此並列電耦接;及一螢光材料層,用於覆蓋該等發光晶片。
根據本發明一項示範性具體實施例,每一發光二極體可進一步包括:形成於該基底基板之該下表面上的若干佈線,用以一起並列電連接該複數個發光晶片。
該基底基板可具有通孔,並且該等發光晶片可進一步包括填塞物,該等填塞物係用於穿過該散熱基板之該等通孔而連接該等發光晶片之電極與該等佈線。
該基底基板包括一PCB基板及一附裝於該PCB基板上之散熱基板,該等佈線可被形成在該PCB基板之一下表面上,並且該等發光晶片被置放在該散熱基板之一上表面上。
該散熱基板可包含金屬。舉例而言,其可完全用一金屬材料製成,可實質上由一金屬材料組成,或可包括一金屬材料。
該等發光二極體可各進一步包括:形成於該散熱基板上之一或多個晶片基底膜,用於使該等發光晶片之該等電極絕緣於該散熱基板。
該等發光二極體可各進一步包括:形成於該散熱基板之通孔之至少內壁上的通孔膜,用於使該等填塞物絕緣於該散熱基板。
該等發光晶片可發射藍光。
該等發光晶片可發射藍光及紫外光。
該螢光材料層可包括一紅色螢光材料及一綠色螢光材料。
該等發光二極體可各進一步包括:一模製樹脂層,其覆蓋該螢光材料層。
可在該基底基板之該上表面上形成凹槽,並且該等發光晶片可被至少局部佈置在一相關聯凹槽內。
該等發光二極體可各進一步包括:一形成在該基底基板之該上表面上的一反射層。
此外,一種液晶顯示裝置包括:若干發光二極體;及一液晶面板,其被置放以接收來自該等發光二極體之光,並且該液晶面板包括兩個面板及一插入於該兩個面板之間的液晶層。該等發光二極體可各進一步包括:一PCB基板,其具有下表面、上表面及通孔膜;若干佈線,其形成於該PCB基板之該下表面上;一散熱基板,其具有下表面、上表面及通孔,該等通孔對齊於該散熱基板之該等通孔,其中該散熱基板之該下表面被置放在該PCB基板之該上表面;複數個發光晶片,其被佈置在該散熱基板之該上表面上;若干填塞物,用於穿過該散熱基板及該PCB基板之該等通孔而連接該等發光晶片之電極與該等佈線;一螢光材料層,其覆蓋該等發光晶片;及一模製樹脂層,其形成於該螢光材料層上。
該液晶顯示裝置可進一步包括佈置於該液晶面板之各自側上之兩個偏振器。
該液晶顯示裝置可進一步包括置放在該等發光二極體與該液晶面板之間的一或多個光學膜。
下文中將參考附圖來詳細說明本發明的示範性具體實施例,使得熟悉此項技術者可易於實行本發明,本發明態樣係由申請專利範圍所定義。下文說明內容旨在闡釋,而非限制申請專利範圍。熟悉此項技術者應明白,可額外或替代地使用下文所述之元件的替代實施,並且可省略一些元件。
在圖式中,基於清楚明白考量而誇大層、膜、面板及區域等等的厚度。整份說明書中相似的參考數字標出相似的元件。應明白,當將一層、膜、區域或基板等元件聲稱係"位於另一元件上"時,可能為直接在另一元件上或可能有介於元件間的中間元件。
首先,將參考附圖來說明根據本發明示範性具體實施例之顯示裝置之光源。
圖1繪示根據本發明示範性具體實施例之液晶顯示裝置的分解剖視圖。
如圖1所示,一種根據本發明示範性具體實施例之液晶顯示裝置包括:一液晶面板總成330,用於使用光來顯示影像;一背光組件340,用於產生該光;一選擇性反射膜347,其插入在該液晶面板總成330與該背光組件340之間;一模框架364,用於收納該液晶面板總成330、該選擇性反射膜347與該背光組件340;及上部框361與下部框362。
該液晶顯示面板總成330包括一用於顯示影像之液晶面板300、一驅動晶片510及一撓性電路板550。
該液晶面板300包括:一薄膜電晶體(TFT)陣列面板100;一彩色濾光器陣列面板200,其耦接至且面對該TFT陣列面板100;及一液晶層(圖中未繪示),其插入在該TFT陣列面板100與該彩色濾光器陣列面板200之間。
該TFT陣列面板100具有以矩陣排列的複數個像素(圖中未繪示)。每一像素係藉由一閘極線(圖中未繪示)與一資料線(圖中未繪示)予以界定,並且具有一像素電極。閘極線係往第一方向延伸,並且資料線係往第二方向延伸,該第二方向垂直於該第一方向。資料線絕緣於且交越於電極線。再者,每一像素具有一耦接至閘極線、資料線及像素電極之TFT(圖中未繪示)。
該彩色濾光器陣列面板200具有紅色、綠色及藍色濾光器(圖中未繪示),彼等濾光器係在一薄膜製程中予以形成,並且在所描述之具體實施例中,彼等濾光器係白光之預先決定顏色分量。該彩色濾光器陣列面板200具有一面對該等像素電極之共同電極。
藉由施加於該等像素電壓與該共同電極之間的電壓來排列液晶層之分子,以變更自該背光組件340提供之光的偏振狀態。
該驅動晶片510被裝設在該TFT陣列面板100的第一端部,用以施加驅動訊號至該等資料線與閘極線。該驅動晶片510可由兩個或兩個以上分開之晶片所組成(例如,一用以驅動資料線的晶片及一用以驅動閘極線的晶片),或可由可於一個整合式晶片所組成。該驅動晶片510係藉由玻璃覆晶封裝(COG)製程而裝設在該TFT陣列面板100上。
該撓性電路板550被附裝在該TFT陣列面板100的第一端部,用以施加控制訊號,以控制該驅動晶片510。一時序控制被附裝在該撓性電路板550上,以調整該等驅動訊號的時序及/或控制一用於儲存資料訊號的記憶體。可使用一各向異性傳導膜作為媒體,將該撓性電路板550電連接至該TFT陣列面板100。
該背光組件340被形成在該液晶面板總成330下方,以提供充分均勻的光至該液晶面板總成330。
該背光組件340包括:一光源單元344,其具有用於產生光之LED 345;一光導342,用於導引光路徑;若干光學薄片343,用於增加自該光導342發射之光的照度均勻性;及一反射器341,用於反射自該光導342洩漏之光。
該等LED 345使用發白光二極體作為光源,其可包括塗佈有綠色和紅色螢光材料之複數個藍色LED晶片。在一些具體實施例中,該等LED 345可使用一作為基底的白色LED及一作為輔助的紅色LED。
該光源單元344佈置在該光導342之一側處,並且提供光至該光導342。用於控制該等LED 345之撓性電路板(圖中未繪示)可附裝在該光源單元344之一側處。在本示範性具體實施例中,雖然該光源單元344佈置在該光導342之一側處,但是該光源單元344可佈置在該光導342之兩側處,或若需要,複數個光源單元可佈置在該光導342下方。在後者情況中,可省略該光導342。
該光導342具有一光導圖案(圖中未繪示),用於將光導引至該液晶面板300之用於顯示影像的顯示區。
該等光學薄片343被插入在該光導342與該液晶面板300之間。該等光學薄片343增加自該光導342提供之光的照度均勻性;舉例而言,當入射於液晶面板300上時為實質上均勻。
該反射器341被形成在該光導342下方。該反射器341將自該光導342洩漏之光反射至該光導342,以改良光使用效率。
該模框架364循序收納該反射器341、該光導342、該等光學薄片343及該液晶面板300。該模框架364包括一開放式底表面251及自該底表面251延伸之側壁252,並且該模框架364係用合成樹脂所製成。
該撓性電路板550沿該模框架364之該等側壁252彎曲。複數個第一耦接突出物51被形成於該模框架364之該等側壁側壁252以耦接於該下部框362。
該模框架364被收納於用金屬材料製成之該下部框362中。該下部框362具有一底板261及自該底板261延伸之側板262,以形成一收納空間。相對應於該複數個第一耦接突出物51的複數個耦接凹槽61被形成於該等側板262中。
在耦接該模框架364與該下部框362時,該下部框362的該等側板262被局部佈置該模框架364的該等側壁252外。該複數個第一耦接突出物51被插入在該複數個61中,以耦接該模框架364與該下部框362。此處,為了減小液晶顯示裝置的整體大小,該模框架364在接觸於該下部框362之該等側板262之部分處被局部薄化為該等側板262之厚度。
該上部框361被置放在該液晶面板300之上側。該上部框361覆蓋該液晶面板300以開放用於顯示影像的有效顯示區300,且耦接於該下部框362。該上部框361導引該液晶面板300之位置且使該液晶面板300固定於該模框架364中。
現在,將參考圖2及圖3來詳細說明根據本發明示範性具體實施例之光源單元344及光源單元344之LED 345。
圖2顯示根據本發明示範性具體實施例之LCD的佈局圖;及圖3繪示以沿圖2所示之III-III線為例的剖面圖。
根據本發明具體實施例之LED包括:一基底基板111,其係一種由一下部印刷電路板(PCB)基板110與一上部散熱基板120所組成之雙層式基板;晶片基底膜160,其形成於該基底基板111上;複數個LED晶片130,其佈置在該等晶片基底膜160上;一螢光材料層140,其覆蓋該複數個LED晶片130;及一模製樹脂層150,其形成於該螢光材料層140上。
根據本發明之一示範性具體實施例,形成該基底基板111之下部部分的該PCB基板110具有用於驅動該LED之佈線181與182。該等佈線可包括一用於提供電力至該等LED晶片130的佈線。
形成該基底基板111之上部部分的該散熱基板120係用具有極佳傳熱率之材料(舉例而言,諸如鋁之金屬)所製成,並且其底表面被附裝至該PCB基板110之上表面。凹槽121被形成於該散熱基板120之上表面,並且該等晶片基底膜160與該等LED晶片130被置放在該等凹槽121之底表面。在一些具體實施例中,該散熱基板120可用非金屬之具有極佳傳熱率之材料所形成。
通孔被形成於該基底基板111中,以穿透該PCB基板110之下表面至該散熱基板120之上表面,並且填塞物171與172被形成於該等通孔中,用以電連接該等LED晶片130之電極及該等佈線181與182。通孔膜190被形成於該等通孔之內表面,以使該等填塞物171與172絕緣於該散熱基板120。非必定需要形成該等通孔膜190於該等通孔之整個內表面中,但是較佳方式為,該等通孔膜形成於至少該散熱基板120行進通過之通孔部分。如果該散熱基板120係用絕緣材料所形成,則可省略通孔膜190。
該等晶片基底膜160係用絕緣材料所形成,用於使該等LED晶片130與該散熱基板120之間絕緣。該等晶片基底膜160亦具有通孔,並且該等通孔被填充有該等填塞物171與172。
透過覆晶接合或線接合技術,置放在該晶片基底膜160上的該等LED晶片130之正負電極電連接至該等填塞物171與172。下文將予以描述。
該等LED晶片130可係用於發射藍光之藍色LED,或用於當施加適當電訊號時發射藍光且紫外光兩者之藍色LED。若需要,該等LED晶片130亦可能係用於僅發射紫外光之紫外線LED。
該複數個LED晶片130被裝設在單一基底基板111上且彼此並列電耦接。即,該等LED晶片130之每一者的一第一電極被連接至一特定節點,並且該等LED晶片130之每一者的一第二電極被連接至一不同節點,以驅動該等LED晶片130。舉例而言,一個節點可被接地,並且另一節點可係一特定節點,並且可使用介於該等節點之間的電位差來驅動LED晶片130。因此,相較於用僅一個LED晶片所形成之LED,可產生較高照度之光。
該螢光材料層140係用含紅色與綠色螢光材料所形成,並且覆蓋該等LED晶片130。該螢光材料層140將發射自該等LED晶片130之藍光或紫外光轉換成綠光與紅光。如果LED晶片130係一紫外光LED,則該螢光材料層140可進一步包括藍色螢光材料。
該模製樹脂層150覆蓋該螢光材料層140以護該螢光材料層140。
如上文所述,可藉由在單一基底基板111上裝設且模製該複數個LED晶片130,來獲得高照度LED。結果,雖然發射自該等LED晶片130之藍光或紫外光被轉換成綠光與紅光,但是仍然有可能保證充分照度。
圖4至圖6繪示根據本發明示範性具體實施例之用於兩維光源之LED之各種結構的垂直剖面圖。
請參閱圖4,一反射膜112被塗佈在一散熱基板120上,一晶片基底膜160被形成在該散熱基板120之凹槽內的該反射膜112上,並且一LED晶片被覆晶接合於填塞物頭端173與174上,該填塞物頭端係穿過通孔而置放在該晶片基底膜160之頂部。
該LED晶片包括:一絕緣基板131;一n型半導體層132,其形成於該絕緣基板131上;一作用層133,其形成於該n型半導體層132上;一p型半導體層134,其形成於該作用層133上;及兩個電極135與136,其分別形成於該n型半導體層132與該p型半導體層134上。該兩個電極136與135係分別透過傳導凸塊175與176而連接至該等填塞物頭端173與174。如上文所述,覆晶接合技術意指一種翻轉LED晶片且透過該等傳導凸塊175與176直接連接該等電極135與136至該等填塞物頭端173與174之技術。
請參閱圖5,一反射膜112被塗佈在一散熱基板120上,一晶片基底膜160被形成在該散熱基板120之凹槽內的該反射膜112上,並且一LED晶片被線接合於填塞物頭端173與174上,該填塞物頭端係穿過通孔而置放在該晶片基底膜160之頂部。
該LED晶片包括:一絕緣基板131;一n型半導體層132,其形成於該絕緣基板131上;一作用層133,其形成於該n型半導體層132上;一p型半導體層134,其形成於該作用層133上;及兩個電極135與136,其分別形成於該n型半導體層132與該p型半導體層134上。該兩個電極136與135係分別透過佈線177與178而連接至該等填塞物頭端173與174。
如上文所述,線接合技術意指一種用於連接該LED晶片之該絕緣基板131至該晶片基底膜160且使用該等佈線177與178連接該兩個電極135與136至該等填塞物頭端173與174之技術。
請參閱圖6,一反射膜112被塗佈在一散熱基板120上,一晶片基底膜160被形成在該散熱基板120之凹槽內的該反射膜112上,並且一LED晶片的一個電極係透過一傳導凸塊175直接連接至填塞物頭端174,其中填塞物頭端173與174係穿過通孔而置放在該晶片基底膜160之頂部。
該LED晶片包括:一第一電極351;一傳導基板354,其形成於第一電極351上;一n型半導體層355,其形成於該傳導基板354上;一作用層356,其形成於該n型半導體層355上;及一第二電極357,其形成於該作用層356上。該第一電極351係透過該傳導凸塊175而連接至該填塞物頭端173,並且該第二電極357係透過該佈線178而連接至該填塞物頭端174。
如上文所述,藉由使用透過線接合或覆晶接合技術,或使用其組合,將複數LED晶片並列裝設於單一基底基板上,並且於其上形成螢光材料層,可製造出一種高照度白光LED晶片。
圖7繪示獲自一種採用黃色YAG螢光材料之藍色LED晶片及獲自另一種採用紅色與綠色螢光材料之藍色LED晶片的光譜曲線圖表。
如圖7所示,對於採用黃色YAG螢光材料之藍色LED,峰值出現於黃色波長區,此為介於綠色區與紅色區之間的中間區,並且在藍色區處。相比之下,對於採用綠色與紅色螢光材料之藍色LED,峰值出現於紅色區、綠色區及藍色區處。因此,相較於採用黃色YAG螢光材料之藍色LED晶片,採用紅色與綠色螢光材料之藍色LED晶片可具有較低照度,原因為總光量較低。另一方面,含紅色與綠色螢光材料之藍色LED晶片可具有優秀的色彩再現性(reproducibility)。但是,如同本發明之示範性具體實施例,藉由將該複數個LED晶片裝設在單一基底基板且將螢光材料堆疊於其上來製造LED,有可能保證充分照度。
如上文所述,根據本發明示範性具體實施例,藉由將複數個LED晶片裝設在單一基底基板且將螢光材料堆疊於其上來製造LED,有獲得高照度LED。
雖然已配合目前認為最實用的示範性具體實施例來說明本發明,但是熟悉此項技術者應知道,本發明非受限於所揭示的具體實施例,反之,而是涵蓋隨附申請專利範圍精神與範疇內的各種修改及同等級排列。
51...第一耦接突出物
61...耦接凹槽
100...薄膜電晶體(TFT)陣列面板
110...印刷電路板(PCB)基板
111...基底基板
112...反射膜
120...散熱基板
121...凹槽
130...LED晶片
131...絕緣基板
132...n型半導體層
133...作用層
134...p型半導體層
135,136...電極
140...螢光材料層
150...模製樹脂層
160...晶片基底膜
171,172...填塞物
173,174...填塞物頭端
175,176...傳導凸塊
177,178...佈線
181,182...佈線
190...通孔膜
200...彩色濾光器陣列面板
251...底表面
252...側壁
261...底板
262...側板
300...液晶面板(有效顯示區)
330...液晶面板總成
340...背光組件
341...反射器
342...光導
343...光學薄片
344...光源單元
345...LED(發光二極體)
347...選擇性反射膜
351...第一電極
354...傳導基板
355...n型半導體層
356...作用層
357...第二電極
361...上部框
362...下部框
364...模框架
510...驅動晶片
550...撓性電路板
圖1繪示根據本發明示範性具體實施例之液晶顯示裝置的分解剖視圖。
圖2顯示根據本發明示範性具體實施例之發光二極體(LED)的佈局圖。
圖3繪示以沿圖2所示之III-III線為例的剖面圖。
圖4至圖6繪示根據本發明示範性具體實施例之LED之各種結構的剖面圖。
圖7繪示獲自一種採用黃色YAG螢光材料之藍色LED晶片及獲自另一種採用紅色與綠色螢光材料之藍色LED晶片的光譜曲線圖表。
110...印刷電路板(PCB)基板
111...基底基板
120...散熱基板
121...凹槽
130...LED晶片
140...螢光材料層
150...模製樹脂層
160...晶片基底膜
171,172...填塞物
181,182...佈線
190...通孔膜
Claims (12)
- 一種液晶顯示裝置,包括:複數個發光二極體,該等發光二極體之每一者包含一基底基板,其具有下表面與上表面,複數個發光晶片,其被佈置在該基底基板之該上表面上且彼此並列電耦接;一螢光材料層,其覆蓋該等發光晶片;一液晶面板,其被置放以接收來自該等發光二極體之光,並且該液晶面板包括兩個面板及一插入於該兩個面板之間的液晶層;及形成於該基底基板之該下表面上的若干佈線,用以並列電連接該至少兩個發光晶片,其中該螢光材料層包括紅色螢光材料及綠色螢光材料,其中該基底基板包括一PCB基板及一附裝於該PCB基板上之散熱基板,並且其中該等佈線被形成在該PCB基板之一下表面上,並且該複數個發光晶片被置放在該散熱基板之一上表面上。
- 如請求項1之液晶顯示裝置,其中該基底基板具有相關聯於該複數個發光晶片的複數個通孔,並且其中該發光二極體之每一者進一步包括一第一填塞物及一第二填塞物,該第一填塞物及該第二填塞物穿過相關聯於該複數個發光晶片中之一特定發光晶片之一或多個通孔,而連接該特定發光晶片之一第一電極及一第二 電極與該等佈線。
- 如請求項2之液晶顯示裝置,其中該散熱基板包含金屬。
- 如請求項3之液晶顯示裝置,進一步包括:形成於該散熱基板上之一或多個晶片基底膜,用於使該特定發光晶片之該第一電極及該第二電極絕緣於該散熱基板。
- 如請求項4之液晶顯示裝置,進一步包括:一或多個通孔膜,其形成於相關聯於該特定發光晶片之該一或多個通孔之一表面之至少一部分上,以使該第一填塞物及該第二填塞物絕緣於該散熱基板。
- 如請求項1之液晶顯示裝置,其中該複數個發光晶片發射藍光。
- 如請求項1之液晶顯示裝置,其中該複數個發光晶片發射藍光及紫外光。
- 如請求項1之液晶顯示裝置,進一步包括:一模製樹脂層,其覆蓋該螢光材料層。
- 如請求項1之液晶顯示裝置,其中形成在該基底基板之該上表面上的複數個凹槽,並且其中該複數個發光晶片中之一或多個發光晶片至少局部置放在該複數個凹槽中之一相關聯凹槽內。
- 如請求項1之液晶顯示裝置,進一步包括:一形成在該基底基板之該上表面上的一反射層。
- 如請求項1之液晶顯示裝置,其中該液晶面板包括一第一側及一第二側,並且其中該液晶顯示裝置進一步包括一佈置於該液晶面板之該第一側的第一偏振器及一佈置於 該液晶面板之該第二側的第二偏振器。
- 如請求項1之液晶顯示裝置,進一步包括一或多個光學膜,其至少局部置放在該發光二極體與該液晶面板之間。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050107391A KR101171186B1 (ko) | 2005-11-10 | 2005-11-10 | 고휘도 발광 다이오드 및 이를 이용한 액정 표시 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200729559A TW200729559A (en) | 2007-08-01 |
TWI397191B true TWI397191B (zh) | 2013-05-21 |
Family
ID=38156059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095141823A TWI397191B (zh) | 2005-11-10 | 2006-11-10 | 高照度發光二極體及利用其之液晶顯示裝置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7868332B2 (zh) |
JP (1) | JP2007134722A (zh) |
KR (1) | KR101171186B1 (zh) |
CN (1) | CN1983590B (zh) |
TW (1) | TWI397191B (zh) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9793247B2 (en) | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
US20110062848A1 (en) * | 2009-09-11 | 2011-03-17 | Kun-Jung Chang | Led lamp electrode structure |
KR101171186B1 (ko) | 2005-11-10 | 2012-08-06 | 삼성전자주식회사 | 고휘도 발광 다이오드 및 이를 이용한 액정 표시 장치 |
US9335006B2 (en) | 2006-04-18 | 2016-05-10 | Cree, Inc. | Saturated yellow phosphor converted LED and blue converted red LED |
US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
KR20080051236A (ko) * | 2006-12-05 | 2008-06-11 | 삼성전자주식회사 | 엘이디 패키지 및 그 엘이디 패키지를 포함하는 광원유닛및 백라이트 유닛 |
JP2008147203A (ja) * | 2006-12-05 | 2008-06-26 | Sanken Electric Co Ltd | 半導体発光装置 |
TW200830580A (en) * | 2007-01-05 | 2008-07-16 | Solidlite Corp | High color saturation three wavelength white-light LED |
EP2203766A2 (en) * | 2007-10-16 | 2010-07-07 | Koninklijke Philips Electronics N.V. | Side-emitting led light source for backlighting applications |
TW200923262A (en) * | 2007-11-30 | 2009-06-01 | Tysun Inc | High heat dissipation optic module for light emitting diode and its manufacturing method |
JP5185683B2 (ja) * | 2008-04-24 | 2013-04-17 | パナソニック株式会社 | Ledモジュールの製造方法および照明器具の製造方法 |
KR100992778B1 (ko) | 2008-05-23 | 2010-11-05 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
US8492179B2 (en) * | 2008-07-11 | 2013-07-23 | Koninklijke Philips N.V. | Method of mounting a LED module to a heat sink |
US8058669B2 (en) * | 2008-08-28 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitting diode integration scheme |
US8164710B2 (en) * | 2008-09-04 | 2012-04-24 | Seoul Semiconductor Co., Ltd. | Backlight assembly and liquid crystal display apparatus having the same |
US9425172B2 (en) | 2008-10-24 | 2016-08-23 | Cree, Inc. | Light emitter array |
KR20100057710A (ko) * | 2008-11-10 | 2010-06-01 | 삼성전자주식회사 | 발광 다이오드 및 이를 포함하는 백라이트 유니트 |
KR101064026B1 (ko) | 2009-02-17 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 디바이스 패키지 및 그 제조방법 |
US8089085B2 (en) * | 2009-02-26 | 2012-01-03 | Bridgelux, Inc. | Heat sink base for LEDS |
US8598809B2 (en) | 2009-08-19 | 2013-12-03 | Cree, Inc. | White light color changing solid state lighting and methods |
US8511851B2 (en) | 2009-12-21 | 2013-08-20 | Cree, Inc. | High CRI adjustable color temperature lighting devices |
KR101055081B1 (ko) * | 2010-01-15 | 2011-08-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 백라이트 유닛 |
KR101058880B1 (ko) * | 2010-05-07 | 2011-08-25 | 서울대학교산학협력단 | 액티브 소자를 구비한 led 디스플레이 장치 및 그 제조방법 |
CN102315354B (zh) * | 2010-06-29 | 2013-11-06 | 展晶科技(深圳)有限公司 | 发光二极管的封装结构 |
TWI422071B (zh) * | 2010-07-09 | 2014-01-01 | Universal Scient Ind Shanghai | 發光二極體的封裝結構 |
JP5684511B2 (ja) * | 2010-08-11 | 2015-03-11 | 三菱樹脂株式会社 | 金属箔積層体、led搭載用基板及び光源装置 |
CN101975376B (zh) * | 2010-10-08 | 2012-07-11 | 深圳市华星光电技术有限公司 | 背光模块的发光源散热构造 |
US8653542B2 (en) * | 2011-01-13 | 2014-02-18 | Tsmc Solid State Lighting Ltd. | Micro-interconnects for light-emitting diodes |
US9786811B2 (en) | 2011-02-04 | 2017-10-10 | Cree, Inc. | Tilted emission LED array |
TWI517452B (zh) * | 2011-03-02 | 2016-01-11 | 建準電機工業股份有限公司 | 發光晶體之多晶封裝結構 |
TW201242122A (en) * | 2011-04-15 | 2012-10-16 | Chi Mei Lighting Tech Corp | Light-emitting diode device |
GB201109095D0 (en) | 2011-05-31 | 2011-07-13 | Led Lighting South Africa Close Corp | Cooling of LED illumination devices |
US10842016B2 (en) | 2011-07-06 | 2020-11-17 | Cree, Inc. | Compact optically efficient solid state light source with integrated thermal management |
USD700584S1 (en) | 2011-07-06 | 2014-03-04 | Cree, Inc. | LED component |
TW201312799A (zh) * | 2011-09-02 | 2013-03-16 | Syue-Min Li | 發光二極體元件 |
JP5716623B2 (ja) * | 2011-09-27 | 2015-05-13 | 豊田合成株式会社 | 線状光源装置および面状光源装置 |
CN102494266B (zh) * | 2011-11-18 | 2014-08-20 | 深圳市华星光电技术有限公司 | 背光系统 |
US8708512B2 (en) | 2011-11-18 | 2014-04-29 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Backlight system |
KR101851726B1 (ko) | 2011-11-23 | 2018-04-24 | 엘지이노텍 주식회사 | 표시장치 |
US8858025B2 (en) * | 2012-03-07 | 2014-10-14 | Lg Innotek Co., Ltd. | Lighting device |
TWI469387B (zh) * | 2012-05-16 | 2015-01-11 | Ligitek Electronics Co Ltd | 發光模組 |
CN103427012B (zh) * | 2012-05-24 | 2016-01-06 | 立碁电子工业股份有限公司 | 发光模块 |
US9627351B2 (en) | 2012-10-22 | 2017-04-18 | Sensor Electronic Technology, Inc. | Device electrode formation using metal sheet |
US9117983B2 (en) * | 2012-10-22 | 2015-08-25 | Sensor Electronic Technology, Inc. | Two terminal packaging |
DE102013114547B4 (de) * | 2013-01-18 | 2020-01-16 | Schott Ag | TO-Gehäuse |
TW201432961A (zh) * | 2013-02-05 | 2014-08-16 | Lextar Electronics Corp | 基板結構 |
KR20150015905A (ko) * | 2013-08-02 | 2015-02-11 | 삼성디스플레이 주식회사 | 광원 모듈 및 이를 포함하는 백라이트 어셈블리 |
CN103712131B (zh) * | 2013-12-27 | 2016-03-30 | 京东方科技集团股份有限公司 | 一种背光模组、显示装置 |
KR101668353B1 (ko) * | 2014-11-03 | 2016-10-21 | (주)포인트엔지니어링 | 칩 기판 및 칩 패키지 모듈 |
JP6156402B2 (ja) * | 2015-02-13 | 2017-07-05 | 日亜化学工業株式会社 | 発光装置 |
KR102531109B1 (ko) * | 2016-05-17 | 2023-05-10 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 조명 모듈 |
JP7260526B2 (ja) * | 2017-09-04 | 2023-04-18 | ソウル セミコンダクター カンパニー リミテッド | 表示装置及びその製造方法 |
CN108227301A (zh) * | 2018-01-02 | 2018-06-29 | 京东方科技集团股份有限公司 | 用于显示装置的背光源及其制备方法、背光模组以及显示装置 |
KR102603697B1 (ko) * | 2018-09-14 | 2023-11-16 | 엘지디스플레이 주식회사 | 타일링 표시장치 |
EP3647654A1 (en) * | 2018-10-31 | 2020-05-06 | Valeo Iluminacion, S.A. | Automotive lighting device |
KR102221470B1 (ko) * | 2019-08-08 | 2021-03-02 | 엘지전자 주식회사 | 디스플레이 장치의 제조방법 및 디스플레이 장치 제조를 위한 기판 |
CN111180567A (zh) * | 2020-02-21 | 2020-05-19 | 松山湖材料实验室 | 载体、发光装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000236116A (ja) * | 1999-02-15 | 2000-08-29 | Matsushita Electric Works Ltd | 光源装置 |
JP2004039691A (ja) * | 2002-06-28 | 2004-02-05 | Matsushita Electric Ind Co Ltd | Led照明装置用の熱伝導配線基板およびそれを用いたled照明装置、並びにそれらの製造方法 |
WO2004100343A2 (en) * | 2003-05-05 | 2004-11-18 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
US20050001952A1 (en) * | 2003-07-01 | 2005-01-06 | Byung-Woong Han | Backlight assembly and liquid crystal display apparatus having the same |
JP2005311314A (ja) * | 2004-03-26 | 2005-11-04 | Matsushita Electric Ind Co Ltd | Led実装用モジュール、ledモジュール、led実装用モジュールの製造方法及びledモジュールの製造方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63281134A (ja) * | 1987-05-13 | 1988-11-17 | Fuji Electric Co Ltd | アクティブマトリックス形表示パネル |
US5660461A (en) * | 1994-12-08 | 1997-08-26 | Quantum Devices, Inc. | Arrays of optoelectronic devices and method of making same |
JPH10288966A (ja) * | 1997-04-11 | 1998-10-27 | Okaya Electric Ind Co Ltd | Led表示器及びその製造方法 |
JP2002050798A (ja) | 2000-08-04 | 2002-02-15 | Stanley Electric Co Ltd | 白色ledランプ |
JP2002082635A (ja) | 2000-09-07 | 2002-03-22 | Sharp Corp | カラーledディスプレイ装置 |
JP4932078B2 (ja) * | 2000-12-04 | 2012-05-16 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP4703067B2 (ja) * | 2001-05-25 | 2011-06-15 | イビデン株式会社 | Icチップ実装用基板の製造方法 |
JP2003110146A (ja) | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
US6932477B2 (en) | 2001-12-21 | 2005-08-23 | Koninklijke Philips Electronics N.V. | Apparatus for providing multi-spectral light for an image projection system |
JP2003309292A (ja) * | 2002-04-15 | 2003-10-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオードのメタルコア基板及びその製造方法 |
CA2427559A1 (en) * | 2002-05-15 | 2003-11-15 | Sumitomo Electric Industries, Ltd. | White color light emitting device |
US6809781B2 (en) * | 2002-09-24 | 2004-10-26 | General Electric Company | Phosphor blends and backlight sources for liquid crystal displays |
KR100687374B1 (ko) | 2002-10-02 | 2007-02-27 | 솔리드라이트 코퍼레이션 | 3파장 백색 발광다이오드를 제작하는 방법 |
CN1538534A (zh) | 2003-04-15 | 2004-10-20 | 郑荣彬 | 白光发光装置 |
JP4274843B2 (ja) * | 2003-04-21 | 2009-06-10 | シャープ株式会社 | Ledデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびlcd表示装置 |
KR100609830B1 (ko) | 2003-04-25 | 2006-08-09 | 럭스피아 주식회사 | 녹색 및 적색형광체를 이용하는 백색 반도체 발광장치 |
KR100527921B1 (ko) | 2003-05-12 | 2005-11-15 | 럭스피아 주식회사 | 백색 반도체 발광장치 |
JP2005158957A (ja) * | 2003-11-25 | 2005-06-16 | Matsushita Electric Works Ltd | 発光装置 |
JP4123105B2 (ja) * | 2003-05-26 | 2008-07-23 | 松下電工株式会社 | 発光装置 |
KR100557154B1 (ko) | 2003-07-29 | 2006-03-03 | 삼성전자주식회사 | 휴대 단말기에서 영상화면의 표시방법 |
KR100962645B1 (ko) | 2003-08-02 | 2010-06-11 | 삼성전자주식회사 | 백라이트 어셈블리 및 이를 갖는 액정표시장치 |
KR100610249B1 (ko) | 2003-12-23 | 2006-08-09 | 럭스피아 주식회사 | 황색 발광 형광체 및 그것을 채용한 백색 반도체 발광장치 |
KR20070012501A (ko) * | 2004-04-28 | 2007-01-25 | 마츠시타 덴끼 산교 가부시키가이샤 | 발광장치 및 그 제조방법 |
ATE524839T1 (de) * | 2004-06-30 | 2011-09-15 | Cree Inc | Verfahren zum kapseln eines lichtemittierenden bauelements und gekapselte lichtemittierende bauelemente im chip-massstab |
KR200370463Y1 (ko) | 2004-07-20 | 2004-12-17 | 전북대학교산학협력단 | 고밀도 평판형 발광다이오드 백색 조명램프 |
KR20040088446A (ko) | 2004-09-20 | 2004-10-16 | 박재익 | 백색 발광소자 |
CN1758436A (zh) | 2004-10-09 | 2006-04-12 | 光磊科技股份有限公司 | 高功率发光二极管阵列模块 |
US7671529B2 (en) * | 2004-12-10 | 2010-03-02 | Philips Lumileds Lighting Company, Llc | Phosphor converted light emitting device |
JP2005101660A (ja) | 2004-12-24 | 2005-04-14 | Sanyo Electric Co Ltd | 発光ダイオードランプ |
KR101197046B1 (ko) * | 2005-01-26 | 2012-11-06 | 삼성디스플레이 주식회사 | 발광다이오드를 사용하는 2차원 광원 및 이를 이용한 액정표시 장치 |
KR100682876B1 (ko) * | 2005-07-06 | 2007-02-15 | 삼성전기주식회사 | 실리코포스페이트계 형광체 및 이를 포함한 led |
US7513669B2 (en) * | 2005-08-01 | 2009-04-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Light source for LCD back-lit displays |
KR101171186B1 (ko) | 2005-11-10 | 2012-08-06 | 삼성전자주식회사 | 고휘도 발광 다이오드 및 이를 이용한 액정 표시 장치 |
-
2005
- 2005-11-10 KR KR1020050107391A patent/KR101171186B1/ko active IP Right Grant
-
2006
- 2006-11-09 US US11/595,604 patent/US7868332B2/en not_active Expired - Fee Related
- 2006-11-10 TW TW095141823A patent/TWI397191B/zh not_active IP Right Cessation
- 2006-11-10 CN CN2006100647996A patent/CN1983590B/zh not_active Expired - Fee Related
- 2006-11-10 JP JP2006304830A patent/JP2007134722A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000236116A (ja) * | 1999-02-15 | 2000-08-29 | Matsushita Electric Works Ltd | 光源装置 |
JP2004039691A (ja) * | 2002-06-28 | 2004-02-05 | Matsushita Electric Ind Co Ltd | Led照明装置用の熱伝導配線基板およびそれを用いたled照明装置、並びにそれらの製造方法 |
WO2004100343A2 (en) * | 2003-05-05 | 2004-11-18 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
US20050001952A1 (en) * | 2003-07-01 | 2005-01-06 | Byung-Woong Han | Backlight assembly and liquid crystal display apparatus having the same |
JP2005311314A (ja) * | 2004-03-26 | 2005-11-04 | Matsushita Electric Ind Co Ltd | Led実装用モジュール、ledモジュール、led実装用モジュールの製造方法及びledモジュールの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070145383A1 (en) | 2007-06-28 |
KR20070050159A (ko) | 2007-05-15 |
CN1983590B (zh) | 2010-05-26 |
JP2007134722A (ja) | 2007-05-31 |
KR101171186B1 (ko) | 2012-08-06 |
US7868332B2 (en) | 2011-01-11 |
TW200729559A (en) | 2007-08-01 |
CN1983590A (zh) | 2007-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI397191B (zh) | 高照度發光二極體及利用其之液晶顯示裝置 | |
TWI502243B (zh) | 用於實密型顯示器裝置之背光總成及罩蓋 | |
US9705054B2 (en) | Light emitting device module | |
JP5530221B2 (ja) | 発光モジュール及びこれを備えるライトユニット | |
US7381995B2 (en) | Lighting device with flipped side-structure of LEDs | |
US20110019126A1 (en) | Apparatus for radiating heat of light emitting diode and liquid crystal display using the same | |
KR101774277B1 (ko) | 액정표시장치 | |
US20070103939A1 (en) | Sectional light emitting diode backlight unit | |
JP2006210880A (ja) | 発光ダイオードを使用する2次元光源及びそれを用いた液晶表示装置 | |
KR102067420B1 (ko) | 발광다이오드어셈블리 및 그를 포함한 액정표시장치 | |
JP2007279480A (ja) | 液晶表示装置 | |
US8625053B2 (en) | Light emitting diode and backlight unit and liquid crystal display device with the same | |
US20090146159A1 (en) | Light-emitting device, method of manufacturing the light-emitting device and liquid crystal display having the light-emitting device | |
KR20120117137A (ko) | 발광다이오드어셈블리 및 그를 포함한 액정표시장치 | |
JP2009094017A (ja) | バックライト装置及び液晶表示装置 | |
KR20080051236A (ko) | 엘이디 패키지 및 그 엘이디 패키지를 포함하는 광원유닛및 백라이트 유닛 | |
US20060138951A1 (en) | Light source with LED and optical protrusions | |
JP2008227423A (ja) | 光源装置及び液晶表示装置 | |
KR20080077827A (ko) | 발광 다이오드 블록과 이를 이용한 백라이트 유닛 및액정표시장치 | |
JP6131068B2 (ja) | 表示装置 | |
KR101722625B1 (ko) | 백라이트 유닛 및 이를 이용한 액정표시장치 | |
WO2020177162A1 (zh) | Led支架、led器件及侧入式背光模组 | |
KR102068766B1 (ko) | 발광다이오드 어셈블리 및 이를 포함하는 액정표시장치 | |
US7812898B2 (en) | Light source module, illuminating apparatus and liquid crystal display | |
KR20120047061A (ko) | 발광소자 어레이 및 이를 포함하는 백라이트 유닛과 표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |