TWI396241B - A semiconductor wafer picking device - Google Patents

A semiconductor wafer picking device Download PDF

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Publication number
TWI396241B
TWI396241B TW095130646A TW95130646A TWI396241B TW I396241 B TWI396241 B TW I396241B TW 095130646 A TW095130646 A TW 095130646A TW 95130646 A TW95130646 A TW 95130646A TW I396241 B TWI396241 B TW I396241B
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Taiwan
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semiconductor wafer
push
shaft
pick
adhesive sheet
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TW095130646A
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Chinese (zh)
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TW200715426A (en
Inventor
Makoto Ohta
Noriaki Konishi
Yasuo Iwaki
Koichi Shiga
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Shibaura Mechatronics Corp
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Publication of TW200715426A publication Critical patent/TW200715426A/en
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Publication of TWI396241B publication Critical patent/TWI396241B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

Description

半導體晶片之拾取裝置Semiconductor wafer pick-up device 技術領域Technical field

本發明係有關於一種拾取貼附於黏著片之半導體晶片之拾取裝置及拾取方法。The present invention relates to a pick-up device and a pick-up method for picking up a semiconductor wafer attached to an adhesive sheet.

背景技術Background technique

將半導體晶圓切斷為小四方塊狀後所形成之半導體晶片黏貼於黏著片,且在將該半導體晶片接合於基板時用吸附嘴從前述吸附片一個一個地拾取。The semiconductor wafer formed by cutting the semiconductor wafer into small squares is adhered to the adhesive sheet, and is picked up one by one from the adsorption sheet by a suction nozzle when the semiconductor wafer is bonded to the substrate.

如習知之專利文獻1所揭示,從黏著片拾取半導體晶片時,係利用支撐體上面吸附固持貼附有藉吸附嘴拾取之半導體晶片之黏著片的前述半導體晶片周邊部,同時以前端尖銳之頂銷從下方頂起該半導體晶片,以一邊使前述半導體晶片與前述黏著片分離,一邊利用前述吸附嘴進行拾取作業。As disclosed in the patent document 1 of the prior art, when the semiconductor wafer is picked up from the adhesive sheet, the peripheral portion of the semiconductor wafer to which the adhesive sheet of the semiconductor wafer picked up by the nozzle is attached is adsorbed and held by the support body, and the tip end is sharply pointed. The pin lifts the semiconductor wafer from below to perform a picking operation by the suction nozzle while separating the semiconductor wafer from the adhesive sheet.

【專利文獻】特開2002-100644號公報[Patent Document] JP-A-2002-100644

發明揭示Invention

但是,近來出現厚度在50μm以下的極薄半導體晶片。一旦利用前端尖銳之頂銷頂起此種薄型半導體晶片,則壓力會集中於該頂銷前端接觸到的地方。如此一來,會出現前述半導體晶片因為受到前述頂銷所產生之壓力而破損的情形。However, extremely thin semiconductor wafers having a thickness of 50 μm or less have recently appeared. Once the thin semiconductor wafer is lifted by the sharpened top pin, the pressure will concentrate on where the front end of the pin is in contact. As a result, the semiconductor wafer may be damaged due to the pressure generated by the pin.

雖然有人考慮到降低前述頂銷之半導體晶片頂起速度以防止因壓力集中而造成前述半導體晶片破損,但是一旦前述頂銷之頂起速度降低,則拾取速度亦變慢而導致生產性下降,且在前述半導體晶片很薄時,即使降低頂起速度亦很難確實地防止造成損傷。Although it is considered to reduce the ejector speed of the semiconductor wafer of the above-mentioned top pin to prevent the semiconductor wafer from being damaged due to pressure concentration, once the jacking speed of the pin is lowered, the picking speed is also slow, resulting in a decrease in productivity, and When the aforementioned semiconductor wafer is thin, it is difficult to surely prevent damage even if the jacking speed is lowered.

本發明係提供可確實地將前述半導體晶片無破損地由黏著片剝離之拾取裝置及拾取方法。The present invention provides a pick-up device and a pick-up method which can reliably peel the aforementioned semiconductor wafer from the adhesive sheet without damage.

即,本發明為一種用以拾取貼附於黏著片之半導體晶片的半導體晶片拾取裝置,包含有:支撐體,係上面形成為吸附面,且該吸附面可吸附固持前述黏著片對應被拾取前述半導體晶片周圍區域之部分者;上推機構,係裝設為可在前述支撐體內朝上下方向驅動,且推壓前述黏著片之被拾取前述半導體晶片貼附部分下面,以從前述支撐體上面上推前述半導體晶片者;及拾取機構,係吸附固持被拾取前述半導體晶片的上面且從前述黏著片拾取藉由前述上推機構上推之前述半導體晶片者。That is, the present invention is a semiconductor wafer pick-up device for picking up a semiconductor wafer attached to an adhesive sheet, comprising: a support body formed on the upper surface as an adsorption surface, and the adsorption surface can adsorb and hold the adhesive sheet corresponding to being picked up a portion of the area surrounding the semiconductor wafer; the push-up mechanism is configured to be driven in the up-and-down direction in the support body, and pushes the adhesive sheet to be picked up under the semiconductor wafer attaching portion to be above the support body And the pick-up mechanism is configured to adsorb and hold the upper surface of the semiconductor wafer and pick up the semiconductor wafer pushed up by the push-up mechanism from the adhesive sheet.

圖式簡單說明Simple illustration

第1圖係本發明第1實施型態之拾取裝置的概略構造圖。Fig. 1 is a schematic structural view showing a pick-up device according to a first embodiment of the present invention.

第2A圖係支撐體的縱截面圖。Fig. 2A is a longitudinal sectional view of the support.

第2B圖係顯示上推軸之上部與下部吸附嘴體的分解透視圖。Fig. 2B is an exploded perspective view showing the upper portion of the push-up shaft and the lower nozzle body.

第3圖係顯示支撐體吸附面之平面圖。Figure 3 is a plan view showing the adsorption surface of the support.

第4A圖係降下吸附嘴體時的說明圖。Fig. 4A is an explanatory view when the nozzle body is lowered.

第4B圖係升起下部吸附嘴體時的說明圖。Fig. 4B is an explanatory view when the lower adsorption nozzle body is raised.

第4C圖係利用下部吸附嘴體上推半導體晶片時的說明圖。Fig. 4C is an explanatory view when the semiconductor wafer is pushed up by the lower adsorption nozzle body.

第4D圖係利用吸附嘴拾取被下部吸附嘴體上推之半導體晶片時的說明圖。Fig. 4D is an explanatory view of a case where a semiconductor wafer pushed up by a lower adsorption nozzle body is picked up by a suction nozzle.

第5圖係放大顯示利用下部吸附嘴體上推被拾取之半導體晶片時的截面圖。Fig. 5 is an enlarged cross-sectional view showing the semiconductor wafer picked up by the lower nozzle body.

第6A圖係本發明第2實施型態之支撐體上部的截面圖。Fig. 6A is a cross-sectional view showing the upper portion of the support of the second embodiment of the present invention.

第6B圖係支撐體上部的透視圖Figure 6B is a perspective view of the upper part of the support

第6C圖係設置於上推軸上端之盤狀體的平面圖。Fig. 6C is a plan view of a disk-shaped body provided at the upper end of the push-up shaft.

第7圖係本發明第3實施型態之支撐體上部的縱截面圖。Fig. 7 is a longitudinal sectional view showing an upper portion of a support according to a third embodiment of the present invention.

第8圖係本發明之第4實施型態之支撐體上部的縱截面圖。Fig. 8 is a longitudinal sectional view showing an upper portion of a support according to a fourth embodiment of the present invention.

第9圖係本發明第5實施型態之上推軸及下部上推體之透視圖。Fig. 9 is a perspective view showing the push shaft and the lower pusher on the fifth embodiment of the present invention.

第10圖係本發明第6實施型態之支撐體上部的縱截面圖。Fig. 10 is a longitudinal sectional view showing the upper portion of the support of the sixth embodiment of the present invention.

第11圖係設置於上推軸上端之座的平面圖。Figure 11 is a plan view of the seat disposed at the upper end of the push-up shaft.

第12圖係顯示支撐體上面之平面圖。Figure 12 is a plan view showing the upper surface of the support.

第13圖係本發明第7實施型態之支撐體上面的平面圖。Figure 13 is a plan view showing the upper surface of a support of a seventh embodiment of the present invention.

本發明之較佳實施例Preferred embodiment of the invention

以下,一邊參照圖示一邊說明本發明之實施型態。Hereinafter, embodiments of the present invention will be described with reference to the drawings.

第1圖至第5圖係顯示本發明第1實施型態。第1圖所示之拾取裝置具有支撐單元10,且該支撐單元10係設置於延伸安裝於圖未示切片之黏著片2的下面側對面,並利用圖未示之Z驅動源於Z方向上,如下述般,在支撐體1上面接觸黏著片2的位置與離開黏著片2的位置間驅動。Fig. 1 to Fig. 5 show a first embodiment of the present invention. The pick-up device shown in FIG. 1 has a support unit 10, and the support unit 10 is disposed on the lower side of the adhesive sheet 2 which is extended and mounted on the unillustrated slice, and is driven in the Z direction by a Z drive (not shown). As described below, the position on the support 1 contacting the adhesive sheet 2 is driven between the position away from the adhesive sheet 2.

在前述黏著片2上面貼附有將半導體晶圓分割為四方塊狀之複數半導體晶片3。前述切片係利用圖未示之X及Y驅動源朝水平方向驅動。A plurality of semiconductor wafers 3 for dividing the semiconductor wafer into four squares are attached to the adhesive sheet 2. The slice is driven in the horizontal direction by X and Y drive sources not shown.

如此一來,黏附於黏著片2之半導體晶片3可相對於支撐單元10而在X及Y方向定位。另外,亦可將前述切片朝Z方向驅動以取代支撐單元10,總之只要前述切片與支撐單元10相對地朝X、Y及Z方向驅動即可。As a result, the semiconductor wafer 3 adhered to the adhesive sheet 2 can be positioned in the X and Y directions with respect to the support unit 10. Alternatively, the slice may be driven in the Z direction instead of the support unit 10, and as long as the slice is driven in the X, Y, and Z directions with respect to the support unit 10.

在前述黏著片2的上面側,於前述支撐單元10上方設置有構成拾取機構之上部吸附嘴機構4。該上部吸附嘴機構4具有利用圖未示之X、Y及Z驅動源朝X、Y及Z方向驅動之拾取軸5,且在該拾取軸5下端面設有凸部6。On the upper surface side of the adhesive sheet 2, a suction nozzle mechanism 4 constituting an upper portion of the pickup mechanism is disposed above the support unit 10. The upper nozzle mechanism 4 has a pickup shaft 5 that is driven in the X, Y, and Z directions by X, Y, and Z driving sources (not shown), and a convex portion 6 is provided on the lower end surface of the pickup shaft 5.

在前述拾取軸5內沿著軸方向形成有前端朝前述凸部6端面開口之吸引孔7,且該吸引孔7連接圖未示之吸引泵。又,在前述凸部6安裝有可安裝拆卸之由橡膠或軟質合成樹脂等彈性材料所構成之上部吸附嘴體8。該上部吸附嘴體8其中一端連通至前述吸引孔7,且形成另一端朝前端面開口之嘴孔9,並且在下面形成有平坦面8a。A suction hole 7 whose front end opens toward the end surface of the convex portion 6 is formed in the pickup shaft 5 along the axial direction, and the suction hole 7 is connected to a suction pump (not shown). Further, the upper convex portion 6 is provided with an upper adsorption nozzle body 8 which is formed of an elastic material such as rubber or soft synthetic resin which can be attached and detached. One end of the upper adsorption nozzle body 8 communicates with the aforementioned suction hole 7, and a mouth hole 9 whose other end is open toward the front end surface is formed, and a flat surface 8a is formed on the lower surface.

另外,可用音圈電動機等作為將前述拾取軸5朝Z方向驅動之Z驅動源,且最好能夠控制上部吸附嘴機構4所產生 之推壓載重為固定重量。Further, a voice coil motor or the like can be used as the Z drive source for driving the pickup shaft 5 in the Z direction, and it is preferable to control the generation of the upper nozzle mechanism 4. The pushing load is a fixed weight.

如第2圖與第3圖所示,前述支撐體1為下端面開放且在上面開口形成有長方形開口部12之圓桶狀,且前述開口部12形成為略小於第3圖中鏈線代表之拾取對象,即,長方形半導體晶片3的長方形。也就是說,開口部12形成為與半導體晶片3相似之形狀。As shown in FIG. 2 and FIG. 3, the support body 1 has a cylindrical shape in which the lower end surface is open and a rectangular opening portion 12 is formed in the upper surface, and the opening portion 12 is formed to be slightly smaller than the chain line in FIG. The object to be picked up, that is, the rectangle of the rectangular semiconductor wafer 3. That is, the opening portion 12 is formed in a shape similar to that of the semiconductor wafer 3.

如第3圖所示,在前述支撐體1上面同心地形成有環繞前述開口部12的3個環狀溝14a~14c,且3個環狀溝14a~14c透過沿著支撐體1徑方向形成之2個連通溝15相通。連通溝15形成為與預定拾取半導體晶片3的相對2邊(端部)平行,且位於前述邊的外側。As shown in Fig. 3, three annular grooves 14a to 14c surrounding the opening portion 12 are concentrically formed on the support body 1, and three annular grooves 14a to 14c are formed to penetrate along the radial direction of the support body 1. The two communication grooves 15 communicate with each other. The communication groove 15 is formed in parallel with the opposite sides (ends) of the semiconductor wafer 3 to be picked up, and is located outside the aforementioned side.

又,雖然圖上未顯示,但亦可在支撐體1上面更將連通溝15形成為與半導體晶片3的另外相對2邊平行,且位於前述邊的外側。Further, although not shown in the drawing, the communication groove 15 may be formed on the support body 1 so as to be parallel to the other two sides of the semiconductor wafer 3, and to be located outside the side.

在最內側之環狀溝14上,於圓周方向間隔90度朝厚度方向貫通支撐體1上部壁以形成4個吸引孔16a。接著,將該環狀溝14a之直徑設定為大於被拾取半導體晶片3對角線的長度。The innermost annular groove 14 is penetrated through the upper wall of the support body 1 in the thickness direction at intervals of 90 degrees in the circumferential direction to form four suction holes 16a. Next, the diameter of the annular groove 14a is set to be larger than the length of the diagonal line of the semiconductor wafer 3 to be picked up.

在第2個環狀溝14b上,於圓周方向間隔180度形成2個吸引孔16b。如下所述,吸力係透過前述吸引孔16a、16b作用至各環狀溝14a~14c與連通溝15內。另外,環狀溝14a~14c與吸引孔16a、16b僅在第3圖中顯示,在其他圖中則省略。In the second annular groove 14b, two suction holes 16b are formed at intervals of 180 degrees in the circumferential direction. As described below, the suction force acts on the annular grooves 14a to 14c and the communication groove 15 through the suction holes 16a and 16b. Further, the annular grooves 14a to 14c and the suction holes 16a and 16b are only shown in Fig. 3, and are omitted in the other drawings.

如第2A圖所示,在前述支撐體1下端開口設置有氣密地嵌合一部分前述開口之圓柱狀阻塞構件21,且該阻塞構件 21中心部貫穿設置有朝軸方向貫通之插通孔22。在該插通孔22內,構成上推機構之上推軸23可滑動且藉由設置於插通孔22下端部之O型環24氣密地固持。As shown in FIG. 2A, a cylindrical blocking member 21 that hermetically fits a part of the opening is provided at a lower end of the support body 1, and the blocking member is provided. The center portion of the 21 is provided with an insertion hole 22 penetrating in the axial direction. In the insertion hole 22, the push shaft 23 is slidably formed on the push-up mechanism and is hermetically held by the O-ring 24 provided at the lower end portion of the insertion hole 22.

如第2B圖所示,在前述上推軸23之從前述阻塞構件21上端面突出之上端設置有長方形的盤狀體25,且在該盤狀體25上面的中央部設置有圓柱狀的凸部26,並在凸部26可安裝拆卸地安裝有用橡膠或軟質合成樹脂等彈性材料構成之下部吸附嘴體27。As shown in FIG. 2B, a rectangular disk-shaped body 25 is provided at an upper end of the upper push shaft 23 projecting from the upper end surface of the blocking member 21, and a cylindrical convex portion is provided at a central portion of the upper surface of the disk-shaped body 25. In the portion 26, the lower nozzle body 27 is formed by attaching an elastic material such as rubber or soft synthetic resin to the convex portion 26 so as to be detachably attached thereto.

在前述上推軸23沿著軸方向形成有吸引孔28,且該吸引孔28上端開口朝向設置於前述盤狀體25之凸部26上面,而下端開口朝向前述上推軸23側面。在前述下部吸附嘴體27內於上下方向貫通形成有嘴孔29,且將前述下部吸附嘴體27安裝於前述凸部26後,該嘴孔29下端會與前述凸部26的吸引孔28相通。A suction hole 28 is formed in the axial direction of the push-up shaft 23, and an upper end opening of the suction hole 28 faces the convex portion 26 provided on the disk-shaped body 25, and a lower end opening faces the side surface of the push-up shaft 23. A nozzle hole 29 is formed in the lower nozzle body 27 so as to penetrate in the vertical direction, and the lower nozzle body 27 is attached to the convex portion 26, and the lower end of the nozzle hole 29 communicates with the suction hole 28 of the convex portion 26. .

前述下部吸附嘴體27上面為平坦面27a,且平面形狀係形成為直徑略小於第3圖中鏈線表示之半導體晶片3短邊的圓形。即,如第2B圖所示,前述下部吸附嘴體27形成為略圓錐台狀。The upper surface of the lower nozzle body 27 is a flat surface 27a, and the planar shape is formed into a circular shape having a diameter slightly smaller than the short side of the semiconductor wafer 3 indicated by the chain line in FIG. That is, as shown in FIG. 2B, the lower nozzle body 27 is formed in a substantially truncated cone shape.

如第2A圖所示,在阻塞前述支撐體1下部開口之阻塞構件21內形成吸引孔31,並使該吸引孔31其中一端開口朝向前述阻塞構件21上端面,即,支撐體1之內部空間,且另一端開口則朝向前述阻塞構件21外圍面開口。As shown in FIG. 2A, a suction hole 31 is formed in the blocking member 21 that blocks the lower opening of the support body 1, and one end of the suction hole 31 is opened toward the upper end surface of the blocking member 21, that is, the internal space of the support body 1. And the other end opening is opened toward the peripheral surface of the aforementioned blocking member 21.

如第1圖所示,經由管線33將形成於前述阻塞構件21之吸引孔31與形成於前述上推軸23之吸引孔28連接至吸引 泵32。該吸引泵32開始動作後,會透過開口朝前述支撐體1上面之吸引孔16a、16b及連通溝15對環狀溝14a~14c產生吸力,亦同時透過形成於上推軸23之吸引孔28對下部吸附嘴體27之嘴孔29產生吸力。As shown in FIG. 1, the suction hole 31 formed in the blocking member 21 and the suction hole 28 formed in the upper push shaft 23 are connected to the suction hole via the line 33. Pump 32. After the suction pump 32 starts to operate, suction is applied to the annular grooves 14a to 14c through the suction holes 16a and 16b and the communication groove 15 on the upper surface of the support body 1, and the suction holes 28 formed in the push-up shaft 23 are simultaneously transmitted. Suction is generated to the nozzle hole 29 of the lower adsorption nozzle body 27.

在前述環狀溝14a~14c內吸引泵32之吸力開始作用後,支撐體1上面即變為吸附固持貼附有半導體晶片3之黏著片2下面的吸附面。也就是說,支撐體1上面會吸附固持前述黏著片2之被拾取半導體晶片3周圍的部分,即,前述黏附片2之前述開口部12周圍的部分。After the suction of the suction pump 32 in the annular grooves 14a to 14c is started, the upper surface of the support 1 is adsorbed and held by the suction surface on the lower surface of the adhesive sheet 2 to which the semiconductor wafer 3 is attached. That is, the portion of the support sheet 1 around which the semiconductor wafer 3 to be picked up is held, that is, the portion around the opening portion 12 of the adhesive sheet 2 is adsorbed and held.

又,下部吸附嘴體27之嘴孔29內吸力開始作用後,則開口有該嘴孔29之下部吸附嘴體27的平坦面27a會吸附固持前述黏著片2之相對於前述支撐體1開口部12部分的下面。即,可分別吸附固持黏著片2之對應被拾取半導體晶片3下面的部分、及開口部12周圍的部分。Further, after the suction force in the nozzle hole 29 of the lower nozzle body 27 starts to act, the flat surface 27a of the nozzle body 27 opened below the nozzle hole 29 adsorbs and holds the opening of the adhesive sheet 2 with respect to the opening of the support body 1. Below the 12 part. That is, the portion of the adhesive sheet 2 corresponding to the lower surface of the semiconductor wafer 3 and the portion around the opening portion 12 can be adsorbed and held.

如第1圖所示,在前述上推軸23之從前述阻塞構件21下端面突出之下端部可自由旋轉地設置有凸輪從動件35,且該凸輪從動件35與藉由圖未示之驅動源朝箭頭方向旋轉驅動之凸輪36抵接。因此,因為只要凸輪36旋轉驅動則前述上推軸23會於上下方向驅動,所以前述下部吸附嘴體27會隨前述上下方向的動作連動。As shown in FIG. 1 , a cam follower 35 is rotatably provided at an end portion of the push-up shaft 23 projecting from a lower end surface of the blocking member 21, and the cam follower 35 is not shown by the figure. The drive source 36 is driven to rotate in the direction of the arrow. Therefore, since the push-up shaft 23 is driven in the vertical direction as long as the cam 36 is rotationally driven, the lower nozzle body 27 is interlocked with the vertical movement.

在前述凸輪從動件35接觸前述凸輪36下死點,且上推軸23位於下降位置時,使前述下部吸附嘴體27之平坦面27a位於稍微低於支撐體1上面之吸附面的位置。When the cam follower 35 contacts the bottom dead center of the cam 36 and the push-up shaft 23 is at the lowered position, the flat surface 27a of the lower nozzle body 27 is positioned slightly lower than the suction surface of the upper surface of the support body 1.

當凸輪36旋轉使該凸輪從動件35接觸前述凸輪36上死 點,且上推軸23位於上升位置時,將前述下部吸附嘴體27之平坦面27a設定為高出前述支撐體1吸附面預定尺寸,例如1.0mm。When the cam 36 rotates, the cam follower 35 contacts the aforementioned cam 36 and is dead. When the push-up shaft 23 is at the raised position, the flat surface 27a of the lower nozzle body 27 is set to be higher than the predetermined size of the adsorption surface of the support 1, for example, 1.0 mm.

另外,透過圖未示之控制裝置按照下述動作控制前述吸附嘴機構4、支撐單元10等之驅動控制。Further, the control device (not shown) controls the drive control of the nozzle mechanism 4, the support unit 10, and the like in accordance with the following operation.

接下來,一邊參照第4A圖~第4D圖一邊說明前述拾取裝置的動作。Next, the operation of the above-described pickup device will be described with reference to FIGS. 4A to 4D.

將第1圖之支撐體1上面上升至使其上面接觸黏著片2下面的位置後,利用圖未示之切片將黏著片2朝X、Y方向驅動,並將拾取半導體晶片3定位於支撐體1開口部12的上方。即,使半導體晶片3之中心與開口部12中心一致。After the upper surface of the support 1 of FIG. 1 is raised to a position where it is in contact with the lower surface of the adhesive sheet 2, the adhesive sheet 2 is driven in the X and Y directions by a slice not shown, and the pickup semiconductor wafer 3 is positioned on the support. 1 is above the opening portion 12. That is, the center of the semiconductor wafer 3 is made to coincide with the center of the opening 12.

定位好被拾取半導體晶片3後,如第4A圖所示降低上部吸附嘴機構4以利用設置於該嘴機構4下端之上部吸附嘴體8下端的平坦面8a吸附拾取之半導體晶片3的上面。此時,上部吸附嘴體8會以預定載重推壓半導體晶片3。又,下部吸附嘴體27的上面會稍微低於黏著片2的下面。After the semiconductor wafer 3 is picked up, the upper nozzle mechanism 4 is lowered as shown in Fig. 4A to adsorb the upper surface of the semiconductor wafer 3 picked up by the flat surface 8a provided at the lower end of the nozzle body 8 at the lower end of the nozzle mechanism 4. At this time, the upper nozzle body 8 pushes the semiconductor wafer 3 with a predetermined load. Further, the upper surface of the lower adsorption nozzle body 27 is slightly lower than the lower surface of the adhesive sheet 2.

降低上部吸附嘴體8並吸附固持半導體晶片3上面後,如第4B圖所示,使上推軸23上升後再開始動作吸引泵32,以使下部吸附嘴體27之平坦面27a與支撐體1之吸附面(上面)一樣高。After the upper adsorption nozzle body 8 is lowered and the upper surface of the semiconductor wafer 3 is adsorbed and held, as shown in FIG. 4B, the push-up shaft 23 is raised and the suction pump 32 is operated to move the flat surface 27a of the lower adsorption nozzle body 27 and the support body. The adsorption surface of 1 (top) is as high.

如此一來,利用前述吸引泵32之吸力已動作之下部吸附嘴體27的平坦面27a,可隔著黏著片2吸附固持被拾取半導體晶片3的下面。也就是說,可用由彈性材料形成之上部吸附嘴體8與下部吸附嘴體27夾住固持被拾取半導體晶片3 的上下面。As a result, the flat surface 27a of the lower nozzle body 27 is moved by the suction force of the suction pump 32, and the lower surface of the semiconductor wafer 3 to be picked up can be adsorbed and held via the adhesive sheet 2. That is, the upper pick-up nozzle body 8 and the lower nozzle body 27 may be sandwiched by an elastic material to hold the picked-up semiconductor wafer 3 Up and down.

因為若開始動作前述吸引泵32則支撐體1之內部空間會減壓而對支撐體1上面的環狀溝14a~14c與連通溝15產生吸力,所以可利用該吸力將黏著片2之被拾取半導體晶片3周圍的部分吸附固持於支撐體1的吸附面。When the suction pump 32 is started to operate, the internal space of the support 1 is decompressed, and suction is generated on the annular grooves 14a to 14c and the communication groove 15 on the support body 1, so that the adhesive sheet 2 can be picked up by the suction force. A portion around the semiconductor wafer 3 is adsorbed and held on the adsorption surface of the support 1.

此時,支撐體1開口部12內亦會產生吸力,且可隔著黏著片2朝支撐體1內部吸引相對該開口部12之半導體晶片3。At this time, suction force is also generated in the opening portion 12 of the support body 1, and the semiconductor wafer 3 facing the opening portion 12 can be attracted to the inside of the support body 1 via the adhesive sheet 2.

但是,半導體晶片3為稍大於開口部12之長方形。因此,在利用下部吸附嘴體27吸附固持半導體晶片3下面之前,即使對支撐體1開口部12產生吸力,相對該開口部12之半導體晶片3的周圍部份會與支撐體1上面之開口部12周圍部分卡合並受到固持。如此一來,可防止半導體晶片3與黏著片2同時被支撐體1內產生之吸力吸引至開口部12內而彎曲變形,造成損傷的情形。However, the semiconductor wafer 3 is a rectangle slightly larger than the opening portion 12. Therefore, even before the lower surface of the semiconductor wafer 3 is adsorbed by the lower adsorption nozzle body 27, even if the suction force is generated to the opening portion 12 of the support body 1, the peripheral portion of the semiconductor wafer 3 with respect to the opening portion 12 and the opening portion of the support body 1 are opened. 12 The surrounding card is merged and held. As a result, it is possible to prevent the semiconductor wafer 3 and the adhesive sheet 2 from being attracted to the opening 12 by the suction force generated in the support 1 at the same time, thereby causing damage.

利用上部吸附嘴體8與下部吸附嘴體27夾住固持被拾取半導體晶片3的上下面時,如第4C圖所示,使上推軸23上升至使前述下部吸附嘴體27的上端面從等高之支撐體1吸附面高出例如0.5mm為止,並將前述上升作業當作第1上升步驟。When the upper nozzle body 8 and the lower nozzle body 27 are held by the upper and lower surfaces of the pickup semiconductor wafer 3, as shown in FIG. 4C, the push-up shaft 23 is raised to the upper end surface of the lower nozzle body 27. The suction surface of the support 1 of the contour is raised by, for example, 0.5 mm, and the above-mentioned raising operation is regarded as the first rising step.

另外,動作吸引泵32的時間,亦可為前述第1上升步驟結束的時點。Further, the time during which the pump 32 is operated may be the time when the first ascending step ends.

若升起上推軸23,則黏著片2在擴大的同時,會因為對黏著片2之相對開口部12的部分作用之吸力而從半導體晶片3下面的四個角隅處開始剝離。When the push-up shaft 23 is raised, the adhesive sheet 2 is peeled off from the four corners of the lower surface of the semiconductor wafer 3 due to the suction of the portion of the adhesive sheet 2 opposite to the opening portion 12.

在黏著片2開始從半導體晶片3下面的四個角隅處剝離時,使前述下部吸附嘴體27更上升0.5mm,並將前述上升作業作為第2上升步驟。也就是說,藉由控制凸輪36的旋轉,使下部吸附嘴體27每次0.5mm地分成2階段上升,結果使下部吸附嘴體27之平坦面27a由支撐體1吸附面上升1mm。When the adhesive sheet 2 starts to be peeled off from the four corners of the lower surface of the semiconductor wafer 3, the lower nozzle body 27 is further raised by 0.5 mm, and the raising operation is referred to as a second rising step. In other words, by controlling the rotation of the cam 36, the lower nozzle body 27 is divided into two stages at a time of 0.5 mm, and as a result, the flat surface 27a of the lower nozzle body 27 is raised by 1 mm from the suction surface of the support 1.

如此升起下部吸附嘴體27後,黏著片2之相對於半導體晶片3的剝離狀態會從下面四個角隅處朝中心部進行。即,藉由升起下部吸附嘴體27,如第5圖中放大顯示般,黏著片2之從前述下部吸附嘴體27平坦面27a脫離的部分會擴大為山形。After the lower suction nozzle body 27 is thus raised, the peeling state of the adhesive sheet 2 with respect to the semiconductor wafer 3 proceeds from the lower four corners toward the center portion. That is, by raising the lower nozzle body 27, as shown enlarged in Fig. 5, the portion of the adhesive sheet 2 that is separated from the flat surface 27a of the lower nozzle body 27 is expanded into a mountain shape.

也就是說,下部吸附嘴體27一邊使黏著片2變形為台狀山形,一邊從支撐體1吸附面上推前述半導體晶片3。此時,上部吸附嘴機構4與上推軸23的上升動作連動而上升。In other words, the lower nozzle body 27 pushes the semiconductor wafer 3 from the adsorption surface of the support 1 while deforming the adhesive sheet 2 into a trapezoidal shape. At this time, the upper nozzle mechanism 4 rises in conjunction with the raising operation of the push-up shaft 23.

半導體晶片3被上推後,黏著片2一邊變形為山形一邊擴大。因為黏著片2擴大後面積會增加,所以隨著該面積增加每單位面積的黏著力會降低。因此,半導體晶片3變得容易從黏著片2剝離。After the semiconductor wafer 3 is pushed up, the adhesive sheet 2 is deformed into a mountain shape and enlarged. Since the area of the adhesive sheet 2 is enlarged, the adhesion per unit area increases as the area increases. Therefore, the semiconductor wafer 3 becomes easily peeled off from the adhesive sheet 2.

又,由於黏著片2被下部吸附嘴體27上推而變形為山形,所以黏著片2會從距前述下部吸附嘴體27平坦面27a之中心最遠的部分,即,半導體晶片3之四個角隅處開始剝離。第5圖中以R表示黏著片2從半導體晶片3之四個角隅處剝離的部分。Further, since the adhesive sheet 2 is pushed up by the lower suction nozzle body 27 and deformed into a mountain shape, the adhesive sheet 2 is from the portion farthest from the center of the flat surface 27a of the lower suction nozzle body 27, that is, four of the semiconductor wafers 3. The corners began to peel off. In Fig. 5, the portion where the adhesive sheet 2 is peeled off from the four corners of the semiconductor wafer 3 is indicated by R.

利用由彈性材料形成之下部吸附嘴體27的平坦面27a 上推半導體晶片3。如此一來,由於在上推時不會對半導體晶片3施加局部壓力,所以可不損傷半導體晶片3地進行上推作業。The flat surface 27a of the lower nozzle body 27 is formed of an elastic material The semiconductor wafer 3 is pushed up. As a result, since the partial pressure is not applied to the semiconductor wafer 3 at the time of the push-up, the push-up operation can be performed without damaging the semiconductor wafer 3.

而且,下部吸附嘴體27平坦面27a的平面形狀為圓形。如此一來,由於前述平坦面27a不具方角(稜),因此亦可不對半導體晶片3施加局部壓力地進行上推作業。Further, the planar shape of the flat surface 27a of the lower adsorption nozzle body 27 is circular. In this way, since the flat surface 27a does not have a square angle (edge), the push-up operation can be performed without applying partial pressure to the semiconductor wafer 3.

因為下部吸附嘴體27之平坦面27a為圓形,所以可增加從半導體晶片3之四個角隅處到前述平坦面27a的距離。如此一來,在利用下部吸附嘴體27上推半導體晶片3時,由於即使半導體晶片3變形亦可增加半導體晶片3彎曲的曲率半徑,所以可防止對半導體晶片3施加局部壓力。Since the flat surface 27a of the lower adsorption nozzle body 27 is circular, the distance from the four corners of the semiconductor wafer 3 to the aforementioned flat surface 27a can be increased. As a result, when the semiconductor wafer 3 is pushed up by the lower nozzle body 27, the curvature radius of the bending of the semiconductor wafer 3 can be increased even if the semiconductor wafer 3 is deformed, so that partial pressure can be prevented from being applied to the semiconductor wafer 3.

此外,在利用下部吸附嘴體27平坦面27a上推半導體晶片3時,同樣地用由彈性材料所形成之上部吸附嘴體8下面的平坦面8a固持該晶片上面。如此一來,由於在上推時即使黏著片2變形為山形,亦可利用一對吸附嘴體8、27彈性地抑制半導體晶片3與黏著片2同時變形為山形,所以此舉亦可防止被上推之半導體晶片3受到損傷。Further, when the semiconductor wafer 3 is pushed up by the flat surface 27a of the lower nozzle body 27, the upper surface of the wafer is held by the flat surface 8a of the upper surface of the nozzle body 8 formed of an elastic material. In this way, even if the adhesive sheet 2 is deformed into a mountain shape during the push-up, the pair of nozzle bodies 8, 27 can be used to elastically suppress the semiconductor wafer 3 and the adhesive sheet 2 from being simultaneously deformed into a mountain shape, so that the action can also be prevented. The pushed up semiconductor wafer 3 is damaged.

而且,由於利用由彈性材料所形成之上下一對的吸附嘴體27、8彈性地夾住固持半導體晶片3,所以可緩和施加於被上推之半導體晶片3的壓力,並防止該半導體晶片3受到損傷。Further, since the holding semiconductor wafer 3 is elastically sandwiched by the pair of upper and lower adsorption nozzle bodies 27, 8 formed of an elastic material, the pressure applied to the pushed up semiconductor wafer 3 can be alleviated, and the semiconductor wafer 3 can be prevented. Suffered from damage.

利用下部吸附嘴體27將半導體晶片3從支撐體1上面朝上方上推時,如第4D圖所示般升起上部吸附嘴體8。此時,下部吸附嘴體27可利用對嘴孔29作用之吸力吸附固持黏著 片2之對應被拾取半導體晶片3下面的部分。When the semiconductor wafer 3 is pushed upward from the upper surface of the support 1 by the lower adsorption nozzle body 27, the upper adsorption nozzle body 8 is raised as shown in Fig. 4D. At this time, the lower adsorption nozzle body 27 can be adsorbed and held by the suction force acting on the nozzle hole 29. The portion of the sheet 2 is picked up below the portion of the semiconductor wafer 3.

如此一來,可分別將上升之上部吸附嘴體8的吸力,與下部吸附嘴體27之吸力作用為剝離被拾取半導體晶片3及貼附於該半導體晶片3下面之黏著片2的力量。In this way, the suction force of the upper suction nozzle body 8 and the suction force of the lower adsorption nozzle body 27 can be respectively applied to peel off the force of the picked-up semiconductor wafer 3 and the adhesive sheet 2 attached to the lower surface of the semiconductor wafer 3.

因此,相較於習知之僅用上部吸附嘴體8吸附半導體晶片3並進行拾取的方法,因為可利用上下之吸力,即,約2倍的力量從黏附片2剝離半導體晶片3,所以可輕易且確實地拾取前述半導體晶片3。Therefore, compared with the conventional method of adsorbing and picking up the semiconductor wafer 3 only by the upper adsorption nozzle body 8, since the upper and lower suction force, that is, about twice the force can be peeled off from the adhesive sheet 2, the semiconductor wafer 3 can be easily removed. The aforementioned semiconductor wafer 3 is surely picked up.

總而言之,上部吸附嘴體8將半導體晶片3朝上方抬起,而下部吸附嘴體27將黏著片往下方拉。如此一來,因為黏著片2的剝離係由在上推時產生之從半導體晶片3角隅部的剝離部分朝中央進行,所以可藉由上部吸附嘴體8迅速且確實地從黏著片2拾取前述半導體晶片3。In summary, the upper nozzle body 8 lifts the semiconductor wafer 3 upward, and the lower nozzle body 27 pulls the adhesive sheet downward. In this way, since the peeling of the adhesive sheet 2 is performed from the peeling portion of the corner portion of the semiconductor wafer 3 at the time of pushing up toward the center, the upper nozzle body 8 can be quickly and surely picked up from the adhesive sheet 2 The aforementioned semiconductor wafer 3.

又,上部吸附嘴機構4之上部吸附嘴體8與上推軸23之下部吸附嘴體27皆可分別安裝拆卸。如此一來,因為可將各吸附嘴體8、27替換為不同直徑者,所以即使半導體晶片3尺寸改變時,亦可藉由使用因應其尺寸大小之吸附嘴體8、27來進行處理。Further, the upper nozzle body 8 of the upper nozzle mechanism 4 and the suction nozzle body 27 at the lower portion of the upper push shaft 23 can be separately attached and detached. In this way, since the respective nozzle bodies 8, 27 can be replaced with different diameters, even when the size of the semiconductor wafer 3 is changed, the processing can be performed by using the nozzle bodies 8, 27 in accordance with their sizes.

第6A圖~第6C圖顯示本發明之第2實施例。本實施型態係在設置於上推軸23上端之盤狀體25的四個角隅處設置複數,本實施型態為4個凸部26,並分別在該等4個凸部26安裝可安裝拆卸之由彈性材料所構成的下部吸附嘴體27。Fig. 6A to Fig. 6C show a second embodiment of the present invention. In this embodiment, a plurality of corners are provided at the four corners of the disk-shaped body 25 disposed at the upper end of the push-up shaft 23. The present embodiment is four convex portions 26, and is respectively mounted on the four convex portions 26. The lower suction nozzle body 27 made of an elastic material is attached and detached.

成形於前述上推軸23之吸引孔28與在該上推軸23上端面開放成形之凹部41相通。在前述盤狀體25與前述凸部26 中形成於前述下部吸附嘴體27之嘴孔29內,形成有經由前述凹部41連通之連通孔42。因此,第1圖之吸引泵32開始動作並使上推軸23之吸引孔28開始作用時,會對下部吸附嘴體27之嘴孔29產生吸力。The suction hole 28 formed in the push-up shaft 23 communicates with the recess 41 which is open-formed on the upper end surface of the push-up shaft 23. In the aforementioned disk body 25 and the aforementioned convex portion 26 The nozzle hole 29 formed in the lower nozzle body 27 is formed with a communication hole 42 that communicates through the recess 41. Therefore, when the suction pump 32 of Fig. 1 starts to operate and the suction hole 28 of the push-up shaft 23 starts to act, a suction force is generated to the nozzle hole 29 of the lower nozzle body 27.

如此一來,若在前述盤狀體25設置4個下部吸附嘴體27,則在升起上推軸23以上推半導體晶片3時,可利用設置於盤狀體25四個角隅處的4個下部吸附嘴體27一邊吸附固持該半導體晶片3的下面一邊進行上推動作。In this manner, when the four lower nozzle bodies 27 are provided in the disk-shaped body 25, when the semiconductor wafer 3 is pushed up and raised by the push-up shaft 23, the four corners of the disk-shaped body 25 can be used. The lower adsorption nozzle body 27 performs a push-up operation while adsorbing and holding the lower surface of the semiconductor wafer 3.

因此,相較於用1個下部吸附嘴體27上推半導體晶片3時,因為可縮小第6C圖中以Z代表之從下部吸附嘴體27外圍至盤狀體25角落的尺寸,即,從半導體晶片3角隅處至下部吸附嘴體27的尺寸,所以在因應該尺寸Z並上推半導體晶片3時,可減少在半導體晶片3角隅處所產生之撓曲量,以防止該角隅處破損。Therefore, when the semiconductor wafer 3 is pushed up by the lower nozzle body 27, the size from the periphery of the lower nozzle body 27 to the corner of the disk body 25 represented by Z in FIG. 6C can be reduced, that is, The size of the semiconductor wafer 3 is at the corner to the lower nozzle body 27, so that when the semiconductor wafer 3 is pushed up in response to the dimension Z, the amount of deflection generated at the corner of the semiconductor wafer 3 can be reduced to prevent the corner damaged.

由於可相對於對角線方向放大或縮小4個下部吸附嘴體27的位置,所以可配置為例如縮小上推長方形之半導體晶片3的撓曲量。如此一來,可防止上推時在半導體晶片3角隅處產生局部壓力。Since the positions of the four lower nozzle bodies 27 can be enlarged or reduced with respect to the diagonal direction, it is possible to arrange, for example, the amount of deflection of the semiconductor wafer 3 which is pushed up and down. In this way, it is possible to prevent local pressure from being generated at the corners of the semiconductor wafer 3 during the push-up.

第7圖顯示本發明之第3實施型態。本實施型態係相對於設置於上推軸23之盤狀體25的凸部26,利用由較該下部吸附嘴體27更柔軟之彈性材料形成為筒狀之彈性支撐構件44可安裝拆卸地固持由彈性材料形成之下部吸附嘴體27。Fig. 7 shows a third embodiment of the present invention. The present embodiment is detachably mountable with respect to the convex portion 26 of the disk-shaped body 25 provided on the push-up shaft 23 by a resilient support member 44 formed of a resilient material which is softer than the lower suction nozzle body 27. The lower suction nozzle body 27 is formed by an elastic material.

根據此種構造,在用下部吸附嘴體27上推半導體晶片3時,下部吸附嘴體27一邊利用彈性支撐構件44之柔軟彈性 進行彈性位移一邊隔著黏著片2上推半導體晶片3,且前述彈性支撐構件44壓縮變形結束後,下部吸附嘴體27亦會彈性變形。According to this configuration, when the semiconductor wafer 3 is pushed up by the lower nozzle body 27, the lower nozzle body 27 is softly elasticized by the elastic supporting member 44. When the semiconductor wafer 3 is pushed up via the adhesive sheet 2 by elastic displacement, and the elastic support member 44 is compressed and deformed, the lower nozzle body 27 is also elastically deformed.

即,利用下部吸附嘴體27上推半導體晶片3時的彈性,在下部吸附嘴體27接觸半導體晶片3時最柔軟,而隨著上推動作逐漸加強。也就是說,在極力縮小下部吸附嘴體27接觸半導體晶片3時的撞擊以防止損傷,且在上推時下部吸附嘴體27隔著黏著片2推壓半導體晶片3時,可防止半導體晶片3受到撞擊造成損傷。That is, the elasticity when the semiconductor wafer 3 is pushed up by the lower nozzle body 27 is the softest when the lower nozzle body 27 contacts the semiconductor wafer 3, and is gradually strengthened as the push-up operation is gradually performed. That is, the impact when the lower nozzle body 27 contacts the semiconductor wafer 3 is minimized to prevent damage, and when the lower nozzle body 27 pushes the semiconductor wafer 3 via the adhesive sheet 2 when pushed up, the semiconductor wafer 3 can be prevented. Damage caused by impact.

在前述第3實施型態中,亦可使用較下部吸附嘴體27硬之彈性材料夠成彈性支撐構件44。In the third embodiment described above, the elastic supporting member 44 can be formed by using an elastic material which is harder than the lower nozzle body 27.

第8圖顯示本發明之第4實施型態。本實施型態中,具安裝有下部吸附嘴體27之凸部26的盤狀體25可相對於上推軸23分離。即,在前述盤狀體25下面設置有支軸45,而在上推軸23內形成有支撐前述可滑動之支軸45的支撐孔46。Fig. 8 shows a fourth embodiment of the present invention. In the present embodiment, the disk-shaped body 25 having the convex portion 26 to which the lower adsorption nozzle body 27 is attached is separable from the push-up shaft 23. That is, a support shaft 45 is provided under the disk-shaped body 25, and a support hole 46 for supporting the slidable support shaft 45 is formed in the push-up shaft 23.

在前述盤狀體45與前述上推軸23間設置有作為彈性支撐構件的螺旋彈簧47,且該螺旋彈簧47具有較形成前述下部吸附嘴體27之彈性材料柔軟的彈性。A coil spring 47 as an elastic supporting member is provided between the disk-shaped body 45 and the push-up shaft 23, and the coil spring 47 has elasticity which is softer than that of the elastic material forming the lower nozzle body 27.

在前述支軸45中間部分設置有防止脫落銷48。由於前述支軸45會因前述螺旋彈簧47之賦勢力而朝上升方向賦與勢能,所以該防止脫落銷48會與形成於前述上推軸23中間部分之長形孔49上端卡合。A fall prevention pin 48 is provided at an intermediate portion of the aforementioned support shaft 45. Since the fulcrum 45 is biased in the upward direction by the biasing force of the coil spring 47, the detachment preventing pin 48 is engaged with the upper end of the elongated hole 49 formed at the intermediate portion of the upper urging shaft 23.

因此,在上升位置時前述支軸45可透過前述防止脫落銷48防止從支撐孔46脫落的情形,且亦可壓縮變形前述螺 旋彈簧47以從該上升位置朝下降方向位移。Therefore, in the ascending position, the support shaft 45 can be prevented from falling off from the support hole 46 through the aforementioned anti-separation pin 48, and the snail can be compressed and deformed. The coil spring 47 is displaced from the raised position in the descending direction.

另外,在前述支軸45內沿著軸方向形成有與形成於上推軸23之吸引孔28相通的連通孔50。所以,前述吸引孔28可經由前述連通孔50與形成於下部吸附嘴體27之嘴29相通。Further, a communication hole 50 that communicates with the suction hole 28 formed in the push-up shaft 23 is formed in the support shaft 45 along the axial direction. Therefore, the suction hole 28 can communicate with the nozzle 29 formed in the lower nozzle body 27 via the communication hole 50.

根據前述構造,在下部吸附嘴體27接觸半導體晶片3時,由於僅對該晶片3施加下部吸附嘴體27與盤狀體25的重量,且由於螺旋彈簧47之彈性變形而未直接施加上推軸23的上升力,所以可減少施加於半導體晶片3的撞擊,亦可防止該晶片3受到損傷。According to the foregoing configuration, when the lower nozzle body 27 contacts the semiconductor wafer 3, since only the weight of the lower nozzle body 27 and the disk-shaped body 25 is applied to the wafer 3, and the push-up is not directly applied due to the elastic deformation of the coil spring 47 Since the pulling force of the shaft 23 is reduced, the impact applied to the semiconductor wafer 3 can be reduced, and the wafer 3 can be prevented from being damaged.

而且,因為在下部吸附嘴體27接觸半導體晶片3並進行上推時較下部吸附嘴體27柔軟之螺旋彈簧47會壓縮變形,所以下部吸附嘴部27亦會彈性變形。Further, since the coil spring 47 which is softer than the lower nozzle body 27 is compressed and deformed when the lower nozzle body 27 contacts the semiconductor wafer 3 and is pushed up, the lower nozzle portion 27 is also elastically deformed.

因此,與第7圖所示之第3實施型態相同,因為利用下部吸附嘴27上推半導體晶片3時的彈性在下部吸附嘴體27接觸半導體晶片3時最柔軟,且隨著上推半導體晶片3而逐漸增強,所以可防止在上推時給予半導體晶片3撞擊並使其損傷。Therefore, the third embodiment is the same as the third embodiment shown in Fig. 7, because the elasticity when the semiconductor wafer 3 is pushed up by the lower nozzle 27 is the softest when the lower nozzle body 27 contacts the semiconductor wafer 3, and as the semiconductor is pushed up. The wafer 3 is gradually reinforced, so that the semiconductor wafer 3 can be prevented from being struck and damaged when pushed up.

又,在第4實施型態中,亦可使螺旋彈簧47具有較下部吸附嘴體27硬之彈性。Further, in the fourth embodiment, the coil spring 47 may have a lower elasticity than the lower nozzle body 27.

另外,在第3、第4實施型態中,雖然舉下部吸附嘴體27為1個的例子進行說明,但亦可如第2實施型態般設置複數個下部吸附嘴體27。In the third and fourth embodiments, the lower nozzle body 27 is described as an example. However, a plurality of lower nozzle bodies 27 may be provided as in the second embodiment.

設置複數下部吸附嘴體27時,彈性地支撐各下部吸附 嘴體27之彈性支撐構件44或螺旋彈簧47的彈簧常數,即,對載重之壓縮撓曲量可相同亦可相異。When a plurality of lower adsorption nozzle bodies 27 are provided, elastically supporting each lower adsorption The spring constant of the elastic support member 44 or the coil spring 47 of the nozzle body 27, that is, the amount of compression deflection to the load may be the same or different.

使用彈簧定數相異之複數彈性支撐構件44或螺旋彈簧47時,相較於由彈性較強之彈性支撐構件44或螺旋彈簧47所支撐的下部吸附嘴體27,由彈性較弱之彈性支撐構件44或螺旋彈簧47所支撐的下部吸附嘴體27之與黏著片2的摩擦力會變小。如此一來,因為下部吸附嘴體27之上面係相對於黏著片2一邊滑動一邊上升,所以黏著片2會因該滑動接觸而變得容易從半導體晶片3剝離。When the plurality of elastic support members 44 or the coil springs 47 having different spring numbers are used, the lower suction nozzle body 27 supported by the elastic elastic support member 44 or the coil spring 47 is elastically supported by the elastic support. The frictional force of the lower suction nozzle body 27 supported by the member 44 or the coil spring 47 and the adhesive sheet 2 becomes small. In this manner, since the upper surface of the lower nozzle body 27 is lifted while sliding with respect to the adhesive sheet 2, the adhesive sheet 2 is easily peeled off from the semiconductor wafer 3 by the sliding contact.

第9圖係顯示本發明之第5實施型態。本實施型態係上推機構之變形例,且取代前述各實施型態之下部吸附嘴體27,由彈性材料所形成之下部上推體51所構成。Fig. 9 is a view showing a fifth embodiment of the present invention. This embodiment is a modification of the push-up mechanism, and is formed by a lower push-up body 51 formed of an elastic material instead of the lower-side adsorption nozzle body 27 of each of the above-described embodiments.

前述下部上推體51之平面形狀為小於半導體晶片3之長方形,且在其上面沿著寬方向之複述凸條52與凹槽53相對於與寬方向交叉之長方向交互地形成為波浪形。The planar shape of the lower push-up body 51 is smaller than the rectangular shape of the semiconductor wafer 3, and the ridges 52 and the grooves 53 on the upper surface thereof are alternately formed in a wave shape with respect to the long direction crossing the width direction.

前述下部上推體51係設置於可相對於凸部26安裝拆卸,且前述凸部26裝設於上推軸23上端盤狀體25。又,形成於支撐體1之開口部12為大於前述下部上推體51,且小於半導體晶片3的長方形。The lower push-up body 51 is provided to be attachable and detachable to the convex portion 26, and the convex portion 26 is attached to the upper end disk portion 25 of the push-up shaft 23. Further, the opening portion 12 formed in the support 1 is larger than the lower pusher 51 and smaller than the rectangular shape of the semiconductor wafer 3.

另外,在該實施型態中,雖然不像前述各實施型態之下部吸附嘴體27般在前述下部上推體51內形成有嘴孔29,但是可在前述下部吸附上推體51之突條52上面形成開口之吸引孔。Further, in this embodiment, although the nozzle hole 29 is formed in the lower push-up body 51 as in the lower nozzle body 27 of the above-described respective embodiments, the push-up body 51 can be sucked at the lower portion. An opening of the opening is formed in the strip 52.

使用前述構造之下部上推體51時,由於該下部上推體 51為小於半導體晶片3之長方形,所以在上推半導體晶片3時可抑制半導體晶片3因開口部12之吸力而朝下方大幅度彎曲變形。如此一來,即使為厚度20~30μm的極薄半導體晶片3,亦可防止其因吸力而大幅度彎曲破損。When the lower pusher 51 is used in the lower configuration, the lower pusher is used Since 51 is smaller than the rectangular shape of the semiconductor wafer 3, when the semiconductor wafer 3 is pushed up, it is possible to suppress the semiconductor wafer 3 from being largely bent and deformed downward by the suction force of the opening portion 12. In this way, even the extremely thin semiconductor wafer 3 having a thickness of 20 to 30 μm can be prevented from being greatly bent and broken by suction.

而且,因為在下部上推體51形成有複數凹槽53,所以在黏著片2之被下部上推體51上推的部份中,對應凹槽53之部分會受到開口部12所產生之吸力作用。如此一來,因為半導體晶片3會變得容易從黏著片2剝離,所以可用上部吸附嘴體8確實地拾取該半導體晶片3。Further, since the upper push-up body 51 is formed with a plurality of recesses 53, the portion of the adhesive sheet 2 pushed up by the lower push-up body 51, the portion corresponding to the recess 53 is subjected to the suction force generated by the opening portion 12. effect. As a result, since the semiconductor wafer 3 becomes easily peeled off from the adhesive sheet 2, the semiconductor wafer 3 can be surely picked up by the upper adsorption nozzle body 8.

第10圖到第12圖係顯示本發明第6實施型態。該實施型態顯示上推機構之變形例,如第10圖所示般於上推軸23上端設置等同於前述各實施型態之盤狀體25的座25A,並於該座25設置複數下部上推體,且前述下部上推體由彈性材料形成為上面平坦之圓錐台狀。如第11圖所示,本實施型態設置有第1到第5之5個下部上推體55a~55e。Fig. 10 through Fig. 12 show a sixth embodiment of the present invention. This embodiment shows a modification of the push-up mechanism. As shown in Fig. 10, a seat 25A equivalent to the disk-shaped body 25 of each of the above-described embodiments is provided at the upper end of the push-up shaft 23, and a plurality of lower portions are provided at the seat 25. The upper pusher body is formed, and the lower pusher body is formed of an elastic material into a flat truncated cone shape. As shown in Fig. 11, in the present embodiment, the fifth lower pushers 55a to 55e of the first to fifth are provided.

另外,各下部上推體55a~55e之形狀並不限定為圓錐台形,亦可為圓柱狀或四方柱狀。Further, the shape of each of the lower pushers 55a to 55e is not limited to a truncated cone shape, and may be a columnar shape or a square columnar shape.

在5個下部上推體55a~55e之中,例如,位於前述座25A預定方向一端角隅處之第1下部上推體55a係可安裝拆卸地安裝於設在可動軸56上端之圓盤57上,而第2到第4下部上推體55b~55e則可安裝拆卸地設置於前述座25A上面。Among the five lower upper pushers 55a to 55e, for example, the first lower pusher 55a located at one end corner of the predetermined direction of the seat 25A is detachably attached to the disk 57 provided at the upper end of the movable shaft 56. The second to fourth lower pushers 55b to 55e are detachably mounted on the seat 25A.

在前述座25A預定方向一端角隅處形成有凹狀的階部54,且在該階部54形成有支撐孔58,並且前述支撐孔58具開口朝上之大口徑部58a。在該支撐孔58內,前述可動軸56 被設置於前述大口徑部58a之螺旋彈簧59支撐而可彈性位移。A concave step portion 54 is formed at one end corner of the predetermined direction of the seat 25A, and a support hole 58 is formed in the step portion 54, and the support hole 58 has a large-diameter portion 58a having an opening upward. In the support hole 58, the aforementioned movable shaft 56 The coil spring 59 provided in the large-diameter portion 58a is supported to be elastically displaceable.

因此,在前述螺旋彈簧59呈未壓縮狀態時,設定高度以使第1下部上推體55a上面僅較其他上推體55b~55e之上面突出第10圖中h代表之長度。另外,長度h為1mm左右。Therefore, when the coil spring 59 is in an uncompressed state, the height is set such that the upper surface of the first lower pusher 55a protrudes from the upper surface of the other upper pushers 55b to 55e by the length represented by h in Fig. 10. In addition, the length h is about 1 mm.

如第10圖所示,在前述座25A內形成有與在前述上推軸23形成之吸引孔28相通的吸引分配部61。該吸引分配部61與5個吸引分支管62(第10圖中僅表示3個)的其中一端連接,且該等分支管62的另一端與前述支撐孔58及形成於第2~第5下部上推體55b~55e的吸引孔29相通。As shown in Fig. 10, a suction distribution portion 61 that communicates with the suction hole 28 formed in the push-up shaft 23 is formed in the seat 25A. The suction distribution unit 61 is connected to one of the five suction branch pipes 62 (only three are shown in FIG. 10), and the other ends of the branch pipes 62 and the support holes 58 are formed in the second to fifth lower portions. The suction holes 29 of the upper pushers 55b to 55e communicate with each other.

在被前述支撐孔58支撐之前述可動軸56中形成有連通路徑63,且前述連通路徑63與連通至前述支撐孔58之吸引分支管62及形成於設在前述可動軸56之第1下部上推體55a內之吸引孔29相通。A communication path 63 is formed in the movable shaft 56 supported by the support hole 58, and the communication path 63 and the suction branch pipe 62 that communicates with the support hole 58 are formed on the first lower portion provided on the movable shaft 56. The suction holes 29 in the pusher 55a communicate with each other.

如此一來,可經由上推軸23之吸引孔28對第1至第5下部上推體55a~55e的平坦上面作用第1圖中吸引泵32所產生之吸力。In this manner, the suction force generated by the suction pump 32 in Fig. 1 can be applied to the flat upper surfaces of the first to fifth lower pushers 55a to 55e via the suction holes 28 of the push-up shaft 23.

如第12圖所示,在前述上推軸23朝上方向驅動時,於前述支撐體1上面的吸附面形成對應前述第1至第5下部上推軸55a~55e可突出的形狀,即,組合5個下部上推體55a~55e之平面形狀(圓形)的開口部12A。As shown in FIG. 12, when the push-up shaft 23 is driven upward, the suction surface on the upper surface of the support body 1 has a shape that can be protruded corresponding to the first to fifth lower push-up shafts 55a to 55e, that is, The planar shape (circular) opening portion 12A of the five lower push-up bodies 55a to 55e is combined.

另外,開口部12A的形狀亦可為略小於半導體晶片3之長方形。Further, the shape of the opening portion 12A may be slightly smaller than the rectangular shape of the semiconductor wafer 3.

在前述支撐體1上面,於前述開口部12A周圍形成長方 形溝64,且將該長方形溝64形成為內圍略小於第12圖中鏈線代表之半導體晶片3的外形,而外圍則略大於半導體晶片3的外緣。如此一來,隔著黏著片2定位並吸附固持於支撐體1上面之前述半導體晶片3的外緣會位於前述長方形溝64寬方向中間部分的上方。On the upper surface of the support body 1, a rectangular shape is formed around the opening portion 12A. The groove 64 is formed such that the inner groove is slightly smaller than the outer shape of the semiconductor wafer 3 represented by the chain line in Fig. 12, and the outer periphery is slightly larger than the outer edge of the semiconductor wafer 3. As a result, the outer edge of the semiconductor wafer 3 positioned and adsorbed on the support body 1 via the adhesive sheet 2 is located above the intermediate portion in the width direction of the rectangular groove 64.

如第12圖所示,在前述支撐體1上面形成有複數環狀溝65,及與該環狀溝65及前述長方形溝64相通之4條放射溝66,且於該放射溝66開口有連通支撐體1內部與其上面之貫通孔67。如此一來,吸引泵32之吸力可從支撐體1內部空間及前述貫通孔67經由前述放射溝66作用至長方形溝64及環狀溝65。As shown in Fig. 12, a plurality of annular grooves 65 and four radiation grooves 66 communicating with the annular grooves 65 and the rectangular grooves 64 are formed on the support body 1, and the radiation grooves 66 are open to each other. The through hole 67 is formed inside the support body 1 and above. In this way, the suction force of the suction pump 32 can be applied to the rectangular groove 64 and the annular groove 65 from the inner space of the support body 1 and the through hole 67 via the radiation groove 66.

並未限定前述環狀溝65與放射溝66的數量,例如,放射溝66並未限定為4條,亦可為6條或多於6條。The number of the annular groove 65 and the radiation groove 66 is not limited. For example, the radiation groove 66 is not limited to four, and may be six or more than six.

另外,在形成於支撐體1吸附面之長方形溝64、環狀溝65及放射溝66中,第10圖僅顯示長方形溝64。Further, in the rectangular groove 64, the annular groove 65, and the radiation groove 66 formed on the adsorption surface of the support 1, the tenth figure shows only the rectangular groove 64.

根據此種構造,在相對於支撐體1定位被拾取半導體晶片3的位置,並降低上部吸附嘴機構4以吸附固持半導體晶片3上面後,再開啟吸引泵32以對支撐體1吸附面產生吸力。如此一來,可隔著黏著片2吸附固持已定位於支撐體1吸附面之半導體晶片3。According to this configuration, after the position at which the semiconductor wafer 3 is picked up is positioned with respect to the support 1 and the upper nozzle mechanism 4 is lowered to adsorb and hold the upper surface of the semiconductor wafer 3, the suction pump 32 is turned on to generate suction to the adsorption surface of the support 1. . In this way, the semiconductor wafer 3 that has been positioned on the adsorption surface of the support 1 can be adsorbed and held via the adhesive sheet 2.

前述支撐體1吸附面形成有長方形溝64,且定位半導體晶片3以將該半導體晶片3外緣置於前述長方形溝64之寬方向中間部分。因此,可利用前述長方形溝64產生之吸力強力吸引前述黏著片2之對應前述半導體晶片3外緣的部分。The adsorption surface of the support 1 is formed with a rectangular groove 64, and the semiconductor wafer 3 is positioned such that the outer edge of the semiconductor wafer 3 is placed in the middle portion of the rectangular groove 64 in the width direction. Therefore, the portion of the adhesive sheet 2 corresponding to the outer edge of the semiconductor wafer 3 can be strongly attracted by the suction force generated by the rectangular groove 64.

接下來,朝上升方向驅動上推軸23。如此一來,在5個下部上推體55a~55e中,上面高於第2至第5下部上推體55b~55e的第1上推部55a會隔著黏著片2吸附並彈性推壓對應半導體晶片3四個角隅處中其中1個角隅處之部分的下面。Next, the push-up shaft 23 is driven in the ascending direction. In this way, among the five lower upper pushers 55a to 55e, the first push-up portion 55a whose upper surface is higher than the second to fifth lower pushers 55b to 55e is adsorbed by the adhesive sheet 2 and elastically pressed correspondingly. Below the portion of one of the corners of the four corners of the semiconductor wafer 3.

若僅上推對應半導體晶片3一個角隅處的部分,則相較於其他部分,該角隅處之黏著片2會大幅地擴大。因此,黏著片2會從對應半導體晶片3被第1下部上推體55a上推之角隅處的部分開始剝離。If only the portion corresponding to one corner of the semiconductor wafer 3 is pushed up, the adhesive sheet 2 at the corner is greatly enlarged compared to the other portions. Therefore, the adhesive sheet 2 is peeled off from the portion where the corresponding semiconductor wafer 3 is pushed up by the first lower push-up body 55a.

此時,因為可利用長方形溝64強力吸引黏著片2對應半導體晶片3外緣的部分,所以可圓滑地進行對應半導體晶片3被第1下部上推體55a上推之角隅處外緣部分的剝離作業。At this time, since the portion of the adhesive sheet 2 corresponding to the outer edge of the semiconductor wafer 3 can be strongly attracted by the rectangular groove 64, the outer edge portion of the corner portion corresponding to the semiconductor wafer 3 pushed up by the first lower pusher 55a can be smoothly performed. Stripping work.

而且,由於半導體晶片3會因僅被第1上推體55a部分地上推而傾斜,所以可輕易地從位於傾斜方向上端之角隅處剝離黏著片2。Further, since the semiconductor wafer 3 is inclined by being pushed up only by the first upper pusher 55a, the adhesive sheet 2 can be easily peeled off from the corner of the upper end in the oblique direction.

在第1下部上推體55a上推半導體晶片3後,因為若更升高上推軸23以增加施於前述第1下部上推體55a之推壓力則螺旋彈簧59會壓縮變形,所以相對於上推軸23,前述第1下部上推體55a會相對地朝下方位移。After the semiconductor wafer 3 is pushed up by the first lower upper pusher 55a, the coil spring 59 is compressed and deformed by increasing the push-up shaft 23 to increase the pressing force applied to the first lower pusher 55a. The push-up shaft 23 moves the first lower push-up body 55a downward.

於是,在前述第1下部上推體55a與其他四個下部上推體55b~55e等高時,半導體晶片3下面會被第1至第4下部上推體55a~55d從四個角隅處上推,且被第5下部上推體55e從中間部分上推。Therefore, when the first lower pusher 55a and the other four lower pushers 55b to 55e are equal in height, the lower surface of the semiconductor wafer 3 is pulled from the four corners by the first to fourth lower pushers 55a to 55d. Push up and push up from the middle portion by the fifth lower pusher 55e.

黏著片2會先從對應被第1下部上推體上推之半導體晶 片3一個角隅處的部分開始剝離。而且,利用長方形溝64所產生之吸力強力吸引對應半導體晶片3外緣之部分。The adhesive sheet 2 will first be pushed from the corresponding semiconductor crystal pushed up by the first lower pusher. The portion of the sheet 3 at one corner began to peel off. Further, the suction force generated by the rectangular groove 64 strongly attracts the portion corresponding to the outer edge of the semiconductor wafer 3.

如此一來,在使用第1至第4下部上推體55a~55d之平坦上面上推半導體晶片3四個角隅處而使黏著片2擴大時,以之前被第1下部上推體55a剝離之一個角隅處為起點,亦可圓滑地剝離其他部分。In this manner, when the adhesive sheet 2 is pushed up by using the flat upper surfaces of the first to fourth lower push-up bodies 55a to 55d to push up the four corners of the semiconductor wafer 3, the first lower push-up body 55a is peeled off. One corner is used as a starting point, and other parts can be peeled off smoothly.

也就是說,最初僅利用第1下部上推體55a上推一部分半導體晶片3時,很容易剝離該部分的黏著片2。接著,在利用第2至第4下部上推體55b~55d上推半導體晶片3之其他角隅處時,以被第1下部上推體55a剝離之部分為起點,可比較圓滑地剝離其他部分。In other words, when only a part of the semiconductor wafer 3 is pushed up by the first lower pusher 55a, the adhesive sheet 2 of the portion is easily peeled off. When the other corners of the semiconductor wafer 3 are pushed up by the second to fourth lower pushers 55b to 55d, the portion which is peeled off by the first lower pusher 55a is used as a starting point, and the other portions can be smoothly peeled off. .

而且,由於可利用長方形溝64所產生之吸力強力吸引黏著片2之對應半導體晶片3外緣的部分,所以相輔相成下可圓滑地剝離黏著片2。Further, since the suction force generated by the rectangular groove 64 can strongly attract the portion of the adhesive sheet 2 corresponding to the outer edge of the semiconductor wafer 3, the adhesive sheet 2 can be smoothly peeled off in a complementary manner.

使用第5下部上壓體55e支撐前述半導體晶片3之下面中央處。如此一來,可避免半導體晶片3因形成於支撐體1吸附面之開口部12A內產生的吸力朝12A內吸引而導致彎曲變形並損傷的情形。The lower center of the semiconductor wafer 3 is supported by the fifth lower upper pressing body 55e. In this manner, it is possible to prevent the semiconductor wafer 3 from being bent and deformed by the suction generated in the opening portion 12A of the adsorption surface of the support 1 to be bent and damaged.

如此一來,在從半導體晶片3下面剝離黏著片2時,可利用上部吸附嘴機構4確實地拾取前述半導體晶片3。在拾取時,可利用第1至第5下部上推體55a~55e上面所產生之吸力由下方吸引黏著片2。因此,由於可將該吸力作為從半導體晶片3下面剝離黏著片2的力量,所以亦可藉此圓滑地進行半導體晶片3的拾取作業。As a result, when the adhesive sheet 2 is peeled off from the lower surface of the semiconductor wafer 3, the semiconductor wafer 3 can be surely picked up by the upper nozzle mechanism 4. At the time of pickup, the adhesive sheet 2 can be attracted from below by the suction force generated on the upper portions of the first to fifth lower pushers 55a to 55e. Therefore, since the suction force can be used as the force for peeling off the adhesive sheet 2 from the lower surface of the semiconductor wafer 3, the pickup operation of the semiconductor wafer 3 can be smoothly performed.

在該第6實施型態中,並未將設置於座25A之下部上推體的數量限定為5個,而可為2~4個或6個以上,例如為6個時,可設置為每列2個共3列,此時,為了使位於預定方向一端之一列的2個下部彈性體置於較另外四個下部彈性體高的位置,可利用螺旋彈簧固持為可彈性地朝下方位移。In the sixth embodiment, the number of pushers provided on the lower portion of the seat 25A is not limited to five, but may be two to four or six or more, for example, six, which may be set to each. In this case, in order to position the two lower elastic bodies located at one end of the one end in the predetermined direction at a position higher than the other four lower elastic bodies, the coil springs can be held to be elastically displaced downward.

根據前述構造,在拾取時,因為若升高上推軸則一開始半導體晶片3之預定方向的一端處會隔著黏著片被上推,所以可從前述半導體晶片之預定方向一端處朝其他方向依序剝離前述黏著片。According to the foregoing configuration, at the time of picking up, since the push-up axis is raised, the one end of the predetermined direction of the semiconductor wafer 3 is pushed up via the adhesive sheet, so that it can be from the one end of the predetermined direction of the semiconductor wafer toward the other direction. The aforementioned adhesive sheet was peeled off in order.

又,在第6實施型態中,雖然於第1至第5下部推上體形成嘴孔,並對該等上面產生吸力,但亦可不在各前述下部推上體形成嘴孔。Further, in the sixth embodiment, the nozzle holes are formed in the first to fifth lower portions, and the suction force is generated on the upper surfaces, but the nozzle holes may not be formed in the lower portions.

第13圖係本發明第7實施型態,且該實施型態為第10圖至第12圖所顯示之第6實施型態的變形例。也就是說,在第6實施型態中,雖然在支撐體1吸附面形成長方形溝64,但可在對應半導體晶片3四個角隅處的位置形成吸引孔68以取代長方形溝64,且將前述吸引孔68之大小設定為可與最內側之環狀溝65連通。Fig. 13 is a seventh embodiment of the present invention, and this embodiment is a modification of the sixth embodiment shown in Figs. 10 to 12. That is, in the sixth embodiment, although the rectangular groove 64 is formed on the adsorption surface of the support 1, the suction hole 68 may be formed at a position corresponding to the four corners of the semiconductor wafer 3 instead of the rectangular groove 64, and The suction hole 68 is sized to communicate with the innermost annular groove 65.

根據前述構造,由於可藉由吸引孔68所產生之吸力對黏著片2之對應半導體晶片3四個角隅處的部分產生強力吸力,所以在用下部上推體55a~55e上推該半導體晶片3時,可圓滑地剝離黏著片2之對應半導體晶片3四個角隅處的部分。According to the foregoing configuration, since the suction force generated by the suction hole 68 can exert a strong suction force on the portion of the corresponding corner portion 4 of the corresponding semiconductor wafer 3 of the adhesive sheet 2, the semiconductor wafer is pushed up by the lower push-up bodies 55a to 55e. At 3 o'clock, the portion of the adhesive sheet 2 corresponding to the four corners of the semiconductor wafer 3 can be smoothly peeled off.

因為在從半導體晶片3四個角隅處開始剝離黏著片2 時,該剝離情形容易從四個角隅處延伸至其他部位,所以不會在四個角隅處下面產生毛邊,而可圓滑並確實地進行半導體晶片3的拾取作業。Because the adhesive sheet 2 is peeled off from the four corners of the semiconductor wafer 3 At this time, the peeling situation easily extends from the four corners to other portions, so that no burrs are generated under the four corners, and the pickup operation of the semiconductor wafer 3 can be performed smoothly and surely.

在前述各實施型態中,雖然使用前述凸輪使前述上推軸上下動作,但亦可使用氣缸等其他驅動源。另外,前述上部吸附嘴體與前述下部吸附嘴體之平面形狀不只限於圓形,亦可為長方形等,並未特別規定。In each of the above embodiments, the push-up shaft is operated up and down using the cam, but another drive source such as an air cylinder may be used. Further, the planar shape of the upper nozzle body and the lower nozzle body is not limited to a circular shape, and may be a rectangular shape or the like, and is not particularly limited.

又,雖然分別在前述拾取機構的拾取軸下端與前述上推機構之上推軸上端裝設有可安裝拆卸之由彈性材料所構成的前述吸附嘴,但亦可不在前述拾取機構的拾取軸下端與前述上推機構之上推軸上端裝設由彈性材料所構成的前述吸附嘴。即,只要前述拾取機構能吸附固持半導體晶片上面,且前述上推機構能吸附固持前述黏著片之黏附有半導體晶片下面的部分即可。Further, although the suction nozzle composed of an elastic material is attached to the lower end of the pick-up shaft of the pick-up mechanism and the upper end of the push-up mechanism, the lower end of the pick-up mechanism may not be at the lower end of the pick-up shaft of the pick-up mechanism. The suction nozzle formed of an elastic material is attached to the upper end of the push-up shaft of the push-up mechanism. That is, as long as the pick-up mechanism can adsorb and hold the upper surface of the semiconductor wafer, the push-up mechanism can adsorb and hold the portion of the adhesive sheet adhered to the lower surface of the semiconductor wafer.

另外,雖然前述支撐體開口部形成為略小於前述半導體晶片的長方形,但亦可大於前述半導體晶片,此點並未特別規定。Further, although the support opening portion is formed to be slightly smaller than the rectangular shape of the semiconductor wafer, it may be larger than the semiconductor wafer, and this point is not particularly limited.

在第6實施型態中,雖然在前述支撐體吸附面形成前述長方形溝,但亦可在第1至第5實施型態所使用之支撐體的吸附面形成前述長方形溝。同樣地,在對應前述半導體晶片四個角隅處的部分形成前述吸引孔的構造,亦適用於第1至第5實施型態。In the sixth embodiment, the rectangular groove is formed on the support adsorption surface, but the rectangular groove may be formed on the adsorption surface of the support used in the first to fifth embodiments. Similarly, the configuration in which the suction holes are formed in the portions corresponding to the four corners of the semiconductor wafer is also applicable to the first to fifth embodiments.

產業上利用的可能性Industrial use possibilities

根據本發明,可在從前述黏著片拾取前述半導體晶片 時,吸附固持前述黏著片之前述半導體晶片周圍的部分並上推前述半導體晶片。According to the present invention, the aforementioned semiconductor wafer can be picked up from the aforementioned adhesive sheet At the time, the portion around the semiconductor wafer of the aforementioned adhesive sheet is adsorbed and pushed up and the semiconductor wafer is pushed up.

如此一來,不僅可防止對前述半導體晶片施加局部壓力而造成損傷,且因為對應前述半導體晶片上推部分的前述黏著片可大幅度擴大,所以可利用該可擴大特性輕易地使前述黏著片從前述半導體晶片剝除。In this way, not only the partial pressure applied to the semiconductor wafer can be prevented from being damaged, but also the adhesive sheet corresponding to the push-up portion of the semiconductor wafer can be greatly enlarged, so that the adhesive sheet can be easily removed from the expandable characteristic. The aforementioned semiconductor wafer is stripped.

1‧‧‧支撐體1‧‧‧Support

2‧‧‧黏著片2‧‧‧Adhesive tablets

3‧‧‧半導體晶片3‧‧‧Semiconductor wafer

4‧‧‧上部吸附嘴機構4‧‧‧Upper adsorption nozzle mechanism

5‧‧‧拾取軸5‧‧‧ picking shaft

6、26‧‧‧凸部6, 26‧‧ ‧ convex

7、16a、16b、28、31、68‧‧‧吸引孔7, 16a, 16b, 28, 31, 68‧‧‧ attracting holes

8‧‧‧上部吸附嘴體8‧‧‧Upper adsorption nozzle

8a、27a‧‧‧平坦面8a, 27a‧‧‧ flat surface

9、29‧‧‧嘴孔9, 29‧‧‧ mouth hole

10‧‧‧支撐單元10‧‧‧Support unit

12、12A‧‧‧開口部12, 12A‧‧‧ openings

14a~14c、65‧‧‧環狀溝14a~14c, 65‧‧ ‧ annular groove

15‧‧‧連通溝15‧‧‧Connected trench

21‧‧‧阻塞構件21‧‧‧Blocking members

22‧‧‧插通孔22‧‧‧ inserted through hole

23‧‧‧上推軸23‧‧‧Upper shaft

24‧‧‧O型環24‧‧‧O-ring

25‧‧‧盤狀體25‧‧‧ discoid

25A‧‧‧座25A‧‧‧

27‧‧‧下部吸附嘴體27‧‧‧Lower adsorption nozzle

32‧‧‧吸引泵32‧‧‧Attraction pump

33‧‧‧管線33‧‧‧ pipeline

35‧‧‧凸輪從動件35‧‧‧Cam followers

36‧‧‧凸輪36‧‧‧ cam

41‧‧‧凹部41‧‧‧ recess

42、50‧‧‧連通孔42, 50‧‧‧Connected holes

44‧‧‧彈性支撐構件44‧‧‧elastic support members

45‧‧‧支軸45‧‧‧ fulcrum

46、58‧‧‧支撐孔46, 58‧‧‧ support holes

47、59‧‧‧螺旋彈簧47, 59‧‧‧ spiral spring

48‧‧‧防止脫落銷48‧‧‧ Preventing the loss of the pin

49‧‧‧長形孔49‧‧‧Long hole

51、55a~55e‧‧‧下部上推體51, 55a~55e‧‧‧ lower pusher

52‧‧‧突條52‧‧‧

53‧‧‧凹槽53‧‧‧ Groove

54‧‧‧階部54‧‧‧

56‧‧‧可動軸56‧‧‧ movable shaft

57‧‧‧圓盤57‧‧‧ disc

58a‧‧‧大口徑部58a‧‧‧ Large Diameter Department

61‧‧‧吸引分配部61‧‧‧Attracting the Distribution Department

62‧‧‧吸引分支管62‧‧‧Attracting branch pipe

63‧‧‧連通路徑63‧‧‧Connected path

64‧‧‧長方形溝64‧‧‧ Rectangular ditch

66‧‧‧放射溝66‧‧‧radiation ditch

67‧‧‧貫通孔67‧‧‧through holes

第1圖係本發明第1實施型態之拾取裝置的概略構造圖。Fig. 1 is a schematic structural view showing a pick-up device according to a first embodiment of the present invention.

第2A圖係支撐體的縱截面圖。Fig. 2A is a longitudinal sectional view of the support.

第2B圖係顯示上推軸之上部與下部吸附嘴體的分解透視圖。Fig. 2B is an exploded perspective view showing the upper portion of the push-up shaft and the lower nozzle body.

第3圖係顯示支撐體吸附面之平面圖。Figure 3 is a plan view showing the adsorption surface of the support.

第4A圖係降下吸附嘴體時的說明圖。Fig. 4A is an explanatory view when the nozzle body is lowered.

第4B圖係升起下部吸附嘴體時的說明圖。Fig. 4B is an explanatory view when the lower adsorption nozzle body is raised.

第4C圖係利用下部吸附嘴體上推半導體晶片時的說明圖。Fig. 4C is an explanatory view when the semiconductor wafer is pushed up by the lower adsorption nozzle body.

第4D圖係利用吸附嘴拾取被下部吸附嘴體上推之半導體晶片時的說明圖。Fig. 4D is an explanatory view of a case where a semiconductor wafer pushed up by a lower adsorption nozzle body is picked up by a suction nozzle.

第5圖係放大顯示利用下部吸附嘴體上推被拾取之半導體晶片時的截面圖。Fig. 5 is an enlarged cross-sectional view showing the semiconductor wafer picked up by the lower nozzle body.

第6A圖係本發明第2實施型態之支撐體上部的截面圖。Fig. 6A is a cross-sectional view showing the upper portion of the support of the second embodiment of the present invention.

第6B圖係支撐體上部的透視圖Figure 6B is a perspective view of the upper part of the support

第6C圖係設置於上推軸上端之盤狀體的平面圖。Fig. 6C is a plan view of a disk-shaped body provided at the upper end of the push-up shaft.

第7圖係本發明第3實施型態之支撐體上部的縱截面圖。Fig. 7 is a longitudinal sectional view showing an upper portion of a support according to a third embodiment of the present invention.

第8圖係本發明之第4實施型態之支撐體上部的縱截面圖。Fig. 8 is a longitudinal sectional view showing an upper portion of a support according to a fourth embodiment of the present invention.

第9圖係本發明第5實施型態之上推軸及下部上推體之透視圖。Fig. 9 is a perspective view showing the push shaft and the lower pusher on the fifth embodiment of the present invention.

第10圖係本發明第6實施型態之支撐體上部的縱截面圖。Fig. 10 is a longitudinal sectional view showing the upper portion of the support of the sixth embodiment of the present invention.

第11圖係設置於上推軸上端之座的平面圖。Figure 11 is a plan view of the seat disposed at the upper end of the push-up shaft.

第12圖係顯示支撐體上面之平面圖。Figure 12 is a plan view showing the upper surface of the support.

第13圖係本發明第7實施型態之支撐體上面的平面圖。Figure 13 is a plan view showing the upper surface of a support of a seventh embodiment of the present invention.

1‧‧‧支撐體1‧‧‧Support

12‧‧‧開口部12‧‧‧ openings

21‧‧‧阻塞構件21‧‧‧Blocking members

22‧‧‧插通孔22‧‧‧ inserted through hole

23‧‧‧上推軸23‧‧‧Upper shaft

24‧‧‧O型環24‧‧‧O-ring

25‧‧‧盤狀體25‧‧‧ discoid

26‧‧‧凸部26‧‧‧ convex

27‧‧‧下部吸附嘴體27‧‧‧Lower adsorption nozzle

27a‧‧‧平坦面27a‧‧‧flat surface

28、31‧‧‧吸引孔28, 31‧‧‧ attracting holes

29‧‧‧嘴孔29‧‧‧ mouth hole

35‧‧‧凸輪從動件35‧‧‧Cam followers

Claims (14)

一種半導體晶片之拾取裝置,係用以拾取貼附於黏著片之半導體晶片者,包含有:支撐體,係上面形成為吸附面,且該吸附面可吸附固持前述黏著片對應被拾取之前述半導體晶片周圍部分者;上推機構,係裝設為可在前述支撐體內朝上下方向驅動,且形成有藉由彈性材料可安裝拆卸之上端部分者,該上端部分係推壓前述黏著片之貼附有被拾取之前述半導體晶片部分的下面,以從前述支撐體上面上推前述半導體晶片者;及拾取機構,係吸附固持被拾取之前述半導體晶片的上面且從前述黏著片拾取藉由前述上推機構上推之前述半導體晶片者。 A semiconductor wafer pick-up device for picking up a semiconductor wafer attached to an adhesive sheet, comprising: a support body formed on an adsorption surface, wherein the adsorption surface can adsorb and hold the semiconductor chip corresponding to the adhesive film a portion surrounding the wafer; the push-up mechanism is configured to be driven in the up-and-down direction in the support body, and is formed by attaching and detaching the upper end portion by an elastic material, the upper end portion pressing the attachment of the adhesive sheet And a pick-up mechanism for adsorbing and holding the upper surface of the semiconductor wafer to be picked up and picking up from the adhesive sheet by the aforementioned push-up The aforementioned semiconductor wafers were pushed by the organization. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中前述上推機構包含有:上推軸,係朝上下方向驅動者;及下部吸附嘴體,係由彈性材料所構成,且可安裝拆卸地設於前述上推軸之上端,並吸附前述黏著片之貼附有前述半導體晶片部分的下面者。 The pick-up device for a semiconductor wafer according to claim 1, wherein the push-up mechanism includes: a push-up shaft that drives in an up-and-down direction; and a lower suction nozzle body that is made of an elastic material and can be mounted and disassembled. The ground electrode is disposed at an upper end of the upper push shaft, and adsorbs the lower surface of the adhesive sheet to which the semiconductor wafer portion is attached. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中前述上推機構係可吸附前述黏著片之貼附有被拾取之半導體晶片部分的下面者。 The pick-up device for a semiconductor wafer according to claim 1, wherein the push-up mechanism is capable of adsorbing the underside of the adhesive sheet to which the semiconductor wafer portion to be picked up is attached. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中 前述上推機構係由複數設置為可安裝拆卸之下部吸附嘴體所構成者。 A pick-up device for a semiconductor wafer according to claim 1 of the patent scope, wherein The above-mentioned push-up mechanism is constituted by a plurality of detachable nozzle bodies that can be attached and detached. 如申請專利範圍第1或第2項之半導體晶片之拾取裝置,其中前述上推機構中,上推前述黏著片之貼附有被拾取之半導體晶片部分的面為平坦面。 A pick-up device for a semiconductor wafer according to the first or second aspect of the invention, wherein the push-up mechanism pushes up a surface of the adhesive sheet to which the semiconductor wafer portion to be picked up is a flat surface. 如申請專利第5項之半導體晶片之拾取裝置,其中前述平坦面面積小於前述半導體晶片的平面形狀。 The pick-up device for a semiconductor wafer according to claim 5, wherein the flat surface area is smaller than a planar shape of the semiconductor wafer. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中前述拾取機構之至少下端部分由彈性材料所構成,且該下端部分係用以吸附被拾取之半導體晶片者。 The pick-up device for a semiconductor wafer according to claim 1, wherein at least a lower end portion of the pick-up mechanism is composed of an elastic material, and the lower end portion is for adsorbing the picked semiconductor wafer. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中在前述支撐體吸附面開口形成有形狀小於前述半導體晶片且可使前述上推機構上升之開口部,以隔著前述黏著片上推被拾取之前述半導體晶片。 The pick-up device for a semiconductor wafer according to claim 1, wherein an opening portion having a shape smaller than the semiconductor wafer and capable of raising the push-up mechanism is formed in the opening of the support adsorption surface, and is pushed up by the adhesive sheet. The aforementioned semiconductor wafer. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中前述上推機構具有朝上下方向驅動之上推軸,並藉由彈性支撐構件在該上推軸上端設置由彈性材料所構成的下部吸附嘴體,而該彈性支撐構件係彈性地支撐前述下部吸附嘴體且具有與前述下部吸附嘴體相異之彈性者。 The pick-up device for a semiconductor wafer according to claim 1, wherein the push-up mechanism has an upper push shaft driven in an up-and-down direction, and a lower portion of the push-up shaft is disposed at an upper end of the push-up shaft by an elastic material. The mouth body, and the elastic supporting member elastically supports the lower nozzle body and has elasticity different from the lower nozzle body. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中前述上推機構具有可朝上下方向驅動之上推軸、及設置於該上推軸上端之下部吸附嘴體,且該下部吸附嘴體被前述上推軸所支撐而可朝上下方向彈性地位移,以在朝上升方向驅動前述上推軸而接觸到前述半導體晶片 時,僅對該半導體晶片施加前述下部吸附嘴體的重量。 The pick-up device for a semiconductor wafer according to the first aspect of the invention, wherein the push-up mechanism has an upper push-up shaft that can be driven in an up-and-down direction, and a suction nozzle body disposed below the upper end of the upper push-up shaft, and the lower suction nozzle body Supported by the aforementioned push-up shaft, elastically displaceable in the up-and-down direction to drive the aforementioned push-up shaft in the upward direction to contact the semiconductor wafer At this time, the weight of the lower nozzle body is applied only to the semiconductor wafer. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中前述上推機構具有可朝上下方向驅動之上推軸,並在該上推軸上端設有波浪狀之下部上推體,且前述下部上推體係由彈性材料於上面交錯形成之突條及凹槽者。 The pick-up device for a semiconductor wafer according to claim 1, wherein the push-up mechanism has a push-up shaft that can be driven in an up-and-down direction, and a wave-shaped lower push-up body is provided on an upper end of the push-up shaft, and the lower portion is The push-up system is formed by the elastic material on which the protrusions and grooves are alternately formed. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中前述上推機構具有可朝上下方向驅動之上推軸,且在該上推軸上端設置有複數下部上推體,並且前述複數上推體中之至少1個係以可彈性地下降之方式被固持,使其上面高於其他前述上推體。 The pick-up device for a semiconductor wafer according to claim 1, wherein the push-up mechanism has an upper push-up shaft that can be driven in an up-and-down direction, and a plurality of lower push-up bodies are disposed on an upper end of the push-up shaft, and the plurality of push-ups are pushed up At least one of the bodies is held in a manner that is elastically lowered to make it higher above the other aforementioned pushers. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中在前述支撐體之上面形成有用以產生吸力之長方形溝,且該長方形溝之大小設定為:使隔著前述黏著片吸附固持於前述支撐體上面之半導體晶片的外緣位於前述長方形溝寬方向的中間部分。 The pick-up device for a semiconductor wafer according to claim 1, wherein a rectangular groove for generating suction is formed on the support body, and the rectangular groove is sized to be adsorbed and held on the support via the adhesive sheet. The outer edge of the semiconductor wafer on the upper surface of the body is located at an intermediate portion in the width direction of the rectangular groove. 如申請專利範圍第1項之半導體晶片之拾取裝置,其中在前述支撐體上設有吸引孔,且前述吸引孔位於對應隔著前述黏著片吸附固持於前述支撐體上面之半導體晶片的四個角隅處。 The pick-up device for a semiconductor wafer according to claim 1, wherein the support body is provided with a suction hole, and the suction hole is located at four corners of the semiconductor wafer which are adsorbed and held on the support body via the adhesive sheet. Awkward.
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