TWI395075B - Prior measurement processing method, exposure system and substrate processing device - Google Patents
Prior measurement processing method, exposure system and substrate processing device Download PDFInfo
- Publication number
- TWI395075B TWI395075B TW094106052A TW94106052A TWI395075B TW I395075 B TWI395075 B TW I395075B TW 094106052 A TW094106052 A TW 094106052A TW 94106052 A TW94106052 A TW 94106052A TW I395075 B TWI395075 B TW I395075B
- Authority
- TW
- Taiwan
- Prior art keywords
- measurement
- exposure
- substrate
- mark
- wafer
- Prior art date
Links
- 238000005259 measurement Methods 0.000 title claims abstract description 375
- 239000000758 substrate Substances 0.000 title claims description 206
- 238000012545 processing Methods 0.000 title claims description 145
- 238000003672 processing method Methods 0.000 title description 18
- 238000000034 method Methods 0.000 claims abstract description 104
- 230000008569 process Effects 0.000 claims abstract description 42
- 238000005286 illumination Methods 0.000 claims description 79
- 238000011156 evaluation Methods 0.000 claims description 48
- 238000005457 optimization Methods 0.000 claims description 37
- 239000011248 coating agent Substances 0.000 claims description 34
- 238000000576 coating method Methods 0.000 claims description 34
- 238000004458 analytical method Methods 0.000 claims description 28
- 238000013480 data collection Methods 0.000 claims description 15
- 230000007547 defect Effects 0.000 claims description 12
- 238000011068 loading method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 21
- 235000012431 wafers Nutrition 0.000 description 193
- 238000012937 correction Methods 0.000 description 162
- 238000004364 calculation method Methods 0.000 description 45
- 230000003287 optical effect Effects 0.000 description 45
- 238000001514 detection method Methods 0.000 description 32
- 229920002120 photoresistant polymer Polymers 0.000 description 28
- 238000007726 management method Methods 0.000 description 23
- 230000008859 change Effects 0.000 description 22
- 230000005856 abnormality Effects 0.000 description 20
- 238000003384 imaging method Methods 0.000 description 15
- 238000013461 design Methods 0.000 description 12
- 238000001816 cooling Methods 0.000 description 10
- 238000011161 development Methods 0.000 description 10
- 239000006185 dispersion Substances 0.000 description 10
- 239000003550 marker Substances 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 9
- 230000007613 environmental effect Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 238000005401 electroluminescence Methods 0.000 description 7
- 238000004422 calculation algorithm Methods 0.000 description 6
- 230000008602 contraction Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000010363 phase shift Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000012935 Averaging Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 102000026659 IL10 Human genes 0.000 description 3
- 108090000174 Interleukin-10 Proteins 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 101001010591 Homo sapiens Interleukin-20 Proteins 0.000 description 2
- 101000889450 Homo sapiens Trefoil factor 2 Proteins 0.000 description 2
- 102100030692 Interleukin-20 Human genes 0.000 description 2
- 102100039172 Trefoil factor 2 Human genes 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 102220259718 rs34120878 Human genes 0.000 description 2
- 101100059544 Arabidopsis thaliana CDC5 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101150115300 MAC1 gene Proteins 0.000 description 1
- 101100170553 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DLD2 gene Proteins 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 101150042537 dld1 gene Proteins 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004056167 | 2004-03-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200540579A TW200540579A (en) | 2005-12-16 |
| TWI395075B true TWI395075B (zh) | 2013-05-01 |
Family
ID=34908899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094106052A TWI395075B (zh) | 2004-03-01 | 2005-03-01 | Prior measurement processing method, exposure system and substrate processing device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4760705B2 (ja) |
| KR (1) | KR101144683B1 (ja) |
| IL (1) | IL177844A0 (ja) |
| TW (1) | TWI395075B (ja) |
| WO (1) | WO2005083756A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI691814B (zh) * | 2018-05-16 | 2020-04-21 | 日商紐富來科技股份有限公司 | 帶電粒子束描繪裝置及帶電粒子束描繪方法 |
| TWI759621B (zh) * | 2018-09-20 | 2022-04-01 | 日商斯庫林集團股份有限公司 | 描繪裝置以及描繪方法 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4449697B2 (ja) | 2004-10-26 | 2010-04-14 | 株式会社ニコン | 重ね合わせ検査システム |
| JP4449698B2 (ja) | 2004-10-26 | 2010-04-14 | 株式会社ニコン | 重ね合わせ検査システム |
| US7462429B2 (en) * | 2005-10-12 | 2008-12-09 | Asml Netherlands B.V. | Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate |
| JP4840684B2 (ja) * | 2005-11-04 | 2011-12-21 | 株式会社ニコン | 露光方法 |
| JP4890846B2 (ja) * | 2005-12-08 | 2012-03-07 | キヤノン株式会社 | 計測装置、計測方法、露光装置、及びデバイス製造方法 |
| KR100922549B1 (ko) * | 2007-12-24 | 2009-10-21 | 주식회사 동부하이텍 | 오정렬 발생 기판 검출 장치 및 방법 |
| JP2010283242A (ja) * | 2009-06-05 | 2010-12-16 | Canon Inc | 露光装置およびデバイス製造方法 |
| KR101581083B1 (ko) * | 2010-01-18 | 2015-12-30 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
| JP5574749B2 (ja) | 2010-02-24 | 2014-08-20 | キヤノン株式会社 | 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置 |
| JP5686567B2 (ja) * | 2010-10-19 | 2015-03-18 | キヤノン株式会社 | 露光条件及びマスクパターンを決定するプログラム及び方法 |
| JP5638038B2 (ja) * | 2012-07-12 | 2014-12-10 | キヤノン株式会社 | 決定方法及びプログラム |
| CN111948912A (zh) | 2015-02-23 | 2020-11-17 | 株式会社尼康 | 基板处理系统及基板处理方法、以及组件制造方法 |
| WO2016136690A1 (ja) * | 2015-02-23 | 2016-09-01 | 株式会社ニコン | 計測装置、リソグラフィシステム及び露光装置、並びに管理方法、重ね合わせ計測方法及びデバイス製造方法 |
| KR102239782B1 (ko) * | 2016-09-30 | 2021-04-13 | 가부시키가이샤 니콘 | 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법 |
| CN109725506B (zh) * | 2017-10-31 | 2020-11-13 | 上海微电子装备（集团）股份有限公司 | 一种基底预对准方法和装置以及一种光刻机 |
| WO2020090206A1 (ja) * | 2018-11-01 | 2020-05-07 | 東京エレクトロン株式会社 | 画像処理方法及び画像処理装置 |
| US10996572B2 (en) * | 2019-02-15 | 2021-05-04 | Applied Materials, Inc. | Model based dynamic positional correction for digital lithography tools |
| JP7369529B2 (ja) * | 2019-02-28 | 2023-10-26 | 株式会社オーク製作所 | 露光装置およびアライメント方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276622A (ja) * | 1985-09-30 | 1987-04-08 | Hitachi Ltd | 縮小投影式アライメント方法及びその装置 |
| JPS6298725A (ja) * | 1985-10-25 | 1987-05-08 | Canon Inc | 信号検出装置 |
| US4834540A (en) * | 1986-07-04 | 1989-05-30 | Canon Kabushiki Kaisha | Projection exposure apparatus |
| JPH01230233A (ja) * | 1988-03-10 | 1989-09-13 | Hitachi Ltd | 投影式露光方法およびその装置 |
| US5120134A (en) * | 1988-12-23 | 1992-06-09 | Canon Kabushiki Kaisha | Exposure system including a device for analyzing an affect of a wafer resist upon a mark signal |
| US5820679A (en) * | 1993-07-15 | 1998-10-13 | Hitachi, Ltd. | Fabrication system and method having inter-apparatus transporter |
| JP2000173921A (ja) * | 1993-02-08 | 2000-06-23 | Nikon Corp | 位置合わせ方法、その位置合わせ方法を用いた露光方法、その露光方法を用いたデバイス製造方法、そのデバイス製造方法で製造されたデバイス、並びに位置合わせ装置、その位置合わせ装置を備えた露光装置 |
| WO2001065591A1 (fr) * | 2000-03-02 | 2001-09-07 | Nikon Corporation | Appareil de mesure de position et dispositif d'alignement |
| US6538260B1 (en) * | 1999-03-26 | 2003-03-25 | Canon Kabushiki Kaisha | Position measuring method, and semiconductor device manufacturing method and apparatus using the same |
-
2005
- 2005-02-25 KR KR1020067019972A patent/KR101144683B1/ko active IP Right Grant
- 2005-02-25 JP JP2006510472A patent/JP4760705B2/ja active Active
- 2005-02-25 WO PCT/JP2005/003156 patent/WO2005083756A1/ja active Application Filing
- 2005-03-01 TW TW094106052A patent/TWI395075B/zh not_active IP Right Cessation
-
2006
- 2006-08-31 IL IL177844A patent/IL177844A0/en unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276622A (ja) * | 1985-09-30 | 1987-04-08 | Hitachi Ltd | 縮小投影式アライメント方法及びその装置 |
| JPS6298725A (ja) * | 1985-10-25 | 1987-05-08 | Canon Inc | 信号検出装置 |
| US4834540A (en) * | 1986-07-04 | 1989-05-30 | Canon Kabushiki Kaisha | Projection exposure apparatus |
| JPH01230233A (ja) * | 1988-03-10 | 1989-09-13 | Hitachi Ltd | 投影式露光方法およびその装置 |
| US5120134A (en) * | 1988-12-23 | 1992-06-09 | Canon Kabushiki Kaisha | Exposure system including a device for analyzing an affect of a wafer resist upon a mark signal |
| JP2000173921A (ja) * | 1993-02-08 | 2000-06-23 | Nikon Corp | 位置合わせ方法、その位置合わせ方法を用いた露光方法、その露光方法を用いたデバイス製造方法、そのデバイス製造方法で製造されたデバイス、並びに位置合わせ装置、その位置合わせ装置を備えた露光装置 |
| US5820679A (en) * | 1993-07-15 | 1998-10-13 | Hitachi, Ltd. | Fabrication system and method having inter-apparatus transporter |
| US6538260B1 (en) * | 1999-03-26 | 2003-03-25 | Canon Kabushiki Kaisha | Position measuring method, and semiconductor device manufacturing method and apparatus using the same |
| WO2001065591A1 (fr) * | 2000-03-02 | 2001-09-07 | Nikon Corporation | Appareil de mesure de position et dispositif d'alignement |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI691814B (zh) * | 2018-05-16 | 2020-04-21 | 日商紐富來科技股份有限公司 | 帶電粒子束描繪裝置及帶電粒子束描繪方法 |
| TWI759621B (zh) * | 2018-09-20 | 2022-04-01 | 日商斯庫林集團股份有限公司 | 描繪裝置以及描繪方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060132743A (ko) | 2006-12-21 |
| KR101144683B1 (ko) | 2012-05-25 |
| TW200540579A (en) | 2005-12-16 |
| JP4760705B2 (ja) | 2011-08-31 |
| WO2005083756A1 (ja) | 2005-09-09 |
| JPWO2005083756A1 (ja) | 2007-11-29 |
| IL177844A0 (en) | 2006-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI395075B (zh) | Prior measurement processing method, exposure system and substrate processing device | |
| US7728953B2 (en) | Exposure method, exposure system, and substrate processing apparatus | |
| TWI774027B (zh) | 最佳化來自一感測器系統之量測資料之方法及用於監視半導體製造程序之條件之方法 | |
| TWI394008B (zh) | Correction method and exposure device | |
| KR101410846B1 (ko) | 리소그래피 장치 및 디바이스 제조 방법 | |
| JP4710827B2 (ja) | アライメント条件決定方法及び装置、並びに露光方法及び装置 | |
| US7948616B2 (en) | Measurement method, exposure method and device manufacturing method | |
| TWI244717B (en) | Method of characterizing a process step and device manufacturing method | |
| JP5278719B2 (ja) | 計測方法及び露光方法 | |
| JPWO2007102484A1 (ja) | デバイス製造方法、デバイス製造システム及び測定検査装置 | |
| JP2007115784A (ja) | 露光システム、露光方法、及びデバイス製造工場 | |
| KR101867648B1 (ko) | 위치를 구하는 방법, 노광 방법 및 물품의 제조 방법 | |
| US7990519B2 (en) | Exposure apparatus and device manufacturing method | |
| JP5006761B2 (ja) | 位置合わせ方法、位置合わせ装置、露光方法、露光装置及びデバイス製造方法 | |
| TWI731641B (zh) | 微影製程之子場控制及相關聯裝置 | |
| KR102649936B1 (ko) | 결정 방법, 노광 방법, 노광 장치, 및 물품제조 방법 | |
| JP4947269B2 (ja) | 測定検査方法、測定検査装置、露光装置及びデバイス製造処理装置 | |
| JP2006286747A (ja) | 位置合わせ方法、その装置、プロセス制御装置およびプログラム | |
| JP2007220986A (ja) | デバイス製造処理方法 | |
| JP7330778B2 (ja) | ステージ装置、制御方法、基板処理装置、および物品の製造方法 | |
| TWI662382B (zh) | 度量衡方法及裝置 | |
| CN114270271A (zh) | 用于控制光刻装置的方法 | |
| CN113544588B (zh) | 对准方法和相关联的量测装置 | |
| TWI823593B (zh) | 用於測量基板上的至少一個目標的方法及相關聯設備和基板 | |
| US20240168388A1 (en) | Method for inferring a local uniformity metric |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |