KR101144683B1 - 사전 계측 처리 방법, 노광 시스템 및 기판 처리 장치 - Google Patents

사전 계측 처리 방법, 노광 시스템 및 기판 처리 장치 Download PDF

Info

Publication number
KR101144683B1
KR101144683B1 KR1020067019972A KR20067019972A KR101144683B1 KR 101144683 B1 KR101144683 B1 KR 101144683B1 KR 1020067019972 A KR1020067019972 A KR 1020067019972A KR 20067019972 A KR20067019972 A KR 20067019972A KR 101144683 B1 KR101144683 B1 KR 101144683B1
Authority
KR
South Korea
Prior art keywords
substrate
measurement
exposure
mark
measuring
Prior art date
Application number
KR1020067019972A
Other languages
English (en)
Korean (ko)
Other versions
KR20060132743A (ko
Inventor
유우키 이시이
히로유키 스즈키
신이치 오키타
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20060132743A publication Critical patent/KR20060132743A/ko
Application granted granted Critical
Publication of KR101144683B1 publication Critical patent/KR101144683B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
KR1020067019972A 2004-03-01 2005-02-25 사전 계측 처리 방법, 노광 시스템 및 기판 처리 장치 KR101144683B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00056167 2004-03-01
JP2004056167 2004-03-01
PCT/JP2005/003156 WO2005083756A1 (ja) 2004-03-01 2005-02-25 事前計測処理方法、露光システム及び基板処理装置

Publications (2)

Publication Number Publication Date
KR20060132743A KR20060132743A (ko) 2006-12-21
KR101144683B1 true KR101144683B1 (ko) 2012-05-25

Family

ID=34908899

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067019972A KR101144683B1 (ko) 2004-03-01 2005-02-25 사전 계측 처리 방법, 노광 시스템 및 기판 처리 장치

Country Status (5)

Country Link
JP (1) JP4760705B2 (ja)
KR (1) KR101144683B1 (ja)
IL (1) IL177844A0 (ja)
TW (1) TWI395075B (ja)
WO (1) WO2005083756A1 (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4449697B2 (ja) 2004-10-26 2010-04-14 株式会社ニコン 重ね合わせ検査システム
JP4449698B2 (ja) 2004-10-26 2010-04-14 株式会社ニコン 重ね合わせ検査システム
US7462429B2 (en) * 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
JP4840684B2 (ja) * 2005-11-04 2011-12-21 株式会社ニコン 露光方法
JP4890846B2 (ja) * 2005-12-08 2012-03-07 キヤノン株式会社 計測装置、計測方法、露光装置、及びデバイス製造方法
KR100922549B1 (ko) * 2007-12-24 2009-10-21 주식회사 동부하이텍 오정렬 발생 기판 검출 장치 및 방법
JP2010283242A (ja) * 2009-06-05 2010-12-16 Canon Inc 露光装置およびデバイス製造方法
JP5903891B2 (ja) * 2010-01-18 2016-04-13 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
JP5574749B2 (ja) 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法
JP5638038B2 (ja) * 2012-07-12 2014-12-10 キヤノン株式会社 決定方法及びプログラム
KR20230130161A (ko) * 2015-02-23 2023-09-11 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 관리 방법, 중첩 계측 방법 및 디바이스 제조 방법
JP6719729B2 (ja) * 2015-02-23 2020-07-08 株式会社ニコン 基板処理システム及び基板処理方法、並びにデバイス製造方法
KR102625369B1 (ko) * 2016-09-30 2024-01-15 가부시키가이샤 니콘 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법
CN109725506B (zh) * 2017-10-31 2020-11-13 上海微电子装备（集团）股份有限公司 一种基底预对准方法和装置以及一种光刻机
JP7034825B2 (ja) * 2018-05-16 2022-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2020046581A (ja) * 2018-09-20 2020-03-26 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
WO2020090206A1 (ja) * 2018-11-01 2020-05-07 東京エレクトロン株式会社 画像処理方法及び画像処理装置
US10996572B2 (en) * 2019-02-15 2021-05-04 Applied Materials, Inc. Model based dynamic positional correction for digital lithography tools
JP7369529B2 (ja) * 2019-02-28 2023-10-26 株式会社オーク製作所 露光装置およびアライメント方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5120134A (en) * 1988-12-23 1992-06-09 Canon Kabushiki Kaisha Exposure system including a device for analyzing an affect of a wafer resist upon a mark signal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276622A (ja) * 1985-09-30 1987-04-08 Hitachi Ltd 縮小投影式アライメント方法及びその装置
JPS6298725A (ja) * 1985-10-25 1987-05-08 Canon Inc 信号検出装置
JPH0785466B2 (ja) * 1986-07-04 1995-09-13 キヤノン株式会社 位置合せ装置
JP2634620B2 (ja) * 1988-03-10 1997-07-30 株式会社日立製作所 投影式露光方法およびその装置
JP3391328B2 (ja) * 1993-02-08 2003-03-31 株式会社ニコン 位置合わせ方法、その位置合わせ方法を用いた露光方法、その露光方法を用いたデバイス製造方法、そのデバイス製造方法で製造されたデバイス、並びに位置合わせ装置、その位置合わせ装置を備えた露光装置
TW276353B (ja) * 1993-07-15 1996-05-21 Hitachi Seisakusyo Kk
JP4046884B2 (ja) * 1999-03-26 2008-02-13 キヤノン株式会社 位置計測方法および該位置計測法を用いた半導体露光装置
AU2001232256A1 (en) * 2000-03-02 2001-09-12 Nikon Corporation Position measuring apparatus and aligner

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5120134A (en) * 1988-12-23 1992-06-09 Canon Kabushiki Kaisha Exposure system including a device for analyzing an affect of a wafer resist upon a mark signal

Also Published As

Publication number Publication date
IL177844A0 (en) 2006-12-31
KR20060132743A (ko) 2006-12-21
TW200540579A (en) 2005-12-16
WO2005083756A1 (ja) 2005-09-09
TWI395075B (zh) 2013-05-01
JP4760705B2 (ja) 2011-08-31
JPWO2005083756A1 (ja) 2007-11-29

Similar Documents

Publication Publication Date Title
KR101144683B1 (ko) 사전 계측 처리 방법, 노광 시스템 및 기판 처리 장치
TWI774027B (zh) 最佳化來自一感測器系統之量測資料之方法及用於監視半導體製造程序之條件之方法
US7728953B2 (en) Exposure method, exposure system, and substrate processing apparatus
US20230021079A1 (en) Method for controlling a lithographic apparatus and associated apparatuses
US11599027B2 (en) Lithographic process and apparatus and inspection process and apparatus
US7746446B2 (en) Alignment condition determination method and apparatus of the same, and exposure method and apparatus of the same
US20180011398A1 (en) Method and apparatus for reticle optimization
TWI761252B (zh) 量測裝置及用於判定基板格柵的方法
TWI722433B (zh) 用於控制製造裝置之方法及其裝置
US20200278614A1 (en) Method for controlling a manufacturing apparatus and associated apparatuses
JP2007115784A (ja) 露光システム、露光方法、及びデバイス製造工場
US20240045340A1 (en) Method for controlling a manufacturing process and associated apparatuses
TWI731641B (zh) 微影製程之子場控制及相關聯裝置
KR102649936B1 (ko) 결정 방법, 노광 방법, 노광 장치, 및 물품제조 방법
JP4947269B2 (ja) 測定検査方法、測定検査装置、露光装置及びデバイス製造処理装置
US8793099B2 (en) Calibration of lithographic apparatus
US11796920B2 (en) Method for controlling a manufacturing process and associated apparatuses
EP3869271A1 (en) Method for controlling a manufacturing process and associated apparatuses
US20220146946A1 (en) Method for controlling a lithographic apparatus and associated apparatuses

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150416

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20160418

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20170330

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20180418

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20190418

Year of fee payment: 8