TWI393255B - 橫向擴散金屬氧化物半導體電晶體 - Google Patents
橫向擴散金屬氧化物半導體電晶體 Download PDFInfo
- Publication number
- TWI393255B TWI393255B TW094119328A TW94119328A TWI393255B TW I393255 B TWI393255 B TW I393255B TW 094119328 A TW094119328 A TW 094119328A TW 94119328 A TW94119328 A TW 94119328A TW I393255 B TWI393255 B TW I393255B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- doped region
- doped
- semiconductor
- substantially continuous
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 229910044991 metal oxide Inorganic materials 0.000 title claims 5
- 150000004706 metal oxides Chemical class 0.000 title claims 5
- 239000000758 substrate Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 14
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical group [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 10
- 239000008433 xiaoji Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- NSRGWYQTFLSLOJ-UHFFFAOYSA-N antimony;cobalt(3+) Chemical compound [Co+3].[Sb] NSRGWYQTFLSLOJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical compound [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/151—LDMOS having built-in components
- H10D84/156—LDMOS having built-in components the built-in components being Schottky barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/875,105 US7141860B2 (en) | 2004-06-23 | 2004-06-23 | LDMOS transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200612556A TW200612556A (en) | 2006-04-16 |
| TWI393255B true TWI393255B (zh) | 2013-04-11 |
Family
ID=35504712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094119328A TWI393255B (zh) | 2004-06-23 | 2005-06-10 | 橫向擴散金屬氧化物半導體電晶體 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7141860B2 (enExample) |
| EP (1) | EP1759416A4 (enExample) |
| JP (1) | JP2008504680A (enExample) |
| KR (1) | KR20070026625A (enExample) |
| CN (1) | CN100481493C (enExample) |
| TW (1) | TWI393255B (enExample) |
| WO (1) | WO2006007070A2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7074658B2 (en) * | 2003-05-05 | 2006-07-11 | Vanguard International Semiconductor Corporatio | Structure for an LDMOS transistor and fabrication method for thereof |
| US7608907B2 (en) * | 2005-01-06 | 2009-10-27 | Micrel, Inc. | LDMOS gate controlled schottky diode |
| US20060163658A1 (en) * | 2005-01-21 | 2006-07-27 | Anderson Samuel J | Monolithic MOSFET and schottky diode for mobile phone boost converter |
| JP4845410B2 (ja) * | 2005-03-31 | 2011-12-28 | 株式会社リコー | 半導体装置 |
| US8004038B2 (en) * | 2006-05-22 | 2011-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV process |
| JP5222466B2 (ja) * | 2006-08-09 | 2013-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| KR100932137B1 (ko) * | 2007-06-08 | 2009-12-16 | 주식회사 동부하이텍 | 수평형 디모스 소자의 구조 및 그 제조방법 |
| US7541247B2 (en) * | 2007-07-16 | 2009-06-02 | International Business Machines Corporation | Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication |
| JP5487852B2 (ja) * | 2008-09-30 | 2014-05-14 | サンケン電気株式会社 | 半導体装置 |
| KR101522530B1 (ko) * | 2008-12-24 | 2015-05-26 | 주식회사 동부하이텍 | 정전기 방전 보호 소자 및 그 제조 방법 |
| US8525257B2 (en) * | 2009-11-18 | 2013-09-03 | Micrel, Inc. | LDMOS transistor with asymmetric spacer as gate |
| US20110156810A1 (en) * | 2009-12-30 | 2011-06-30 | Intersil Americas Inc. | Integrated dmos and schottky |
| US8878329B2 (en) * | 2010-09-17 | 2014-11-04 | United Microelectronics Corp. | High voltage device having Schottky diode |
| US8587058B2 (en) * | 2012-01-02 | 2013-11-19 | United Microelectronics Corp. | Lateral diffused metal-oxide-semiconductor device |
| CN103208520B (zh) * | 2012-01-13 | 2017-06-23 | 联华电子股份有限公司 | 横向扩散金属氧化半导体元件 |
| US8686502B2 (en) * | 2012-03-19 | 2014-04-01 | Texas Instruments Incorporated | Schottky diode integrated into LDMOS |
| US9129990B2 (en) | 2012-06-29 | 2015-09-08 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
| US9142554B2 (en) | 2012-06-29 | 2015-09-22 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
| US20140001546A1 (en) | 2012-06-29 | 2014-01-02 | Hubert M. Bode | Semiconductor device and driver circuit with a current carrying region and isolation structure interconnected through a resistor circuit, and method of manufacture thereof |
| US9111767B2 (en) | 2012-06-29 | 2015-08-18 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
| CN103377612B (zh) * | 2013-07-15 | 2016-06-15 | 四川长虹电器股份有限公司 | 一种改善等离子显示器emi低频超标的行扫描芯片控制方法 |
| CN104701372B (zh) * | 2013-12-06 | 2017-10-27 | 无锡华润上华科技有限公司 | 横向扩散金属氧化物半导体器件及其制造方法 |
| CN104752423B (zh) * | 2013-12-31 | 2018-08-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
| JP6257525B2 (ja) | 2014-01-27 | 2018-01-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9461639B2 (en) | 2014-05-16 | 2016-10-04 | Freescale Semiconductor, Inc. | Semiconductor device and power circuit including a sense transistor for current sensing |
| EP3183753B1 (en) | 2014-08-19 | 2025-03-19 | Vishay-Siliconix | Mosfet semiconductor device |
| KR102391348B1 (ko) * | 2014-12-29 | 2022-04-28 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 이를 포함하는 유기 발광 표시 장치 |
| TWI641107B (zh) * | 2017-12-25 | 2018-11-11 | 新唐科技股份有限公司 | 橫向擴散金屬氧化物半導體場效電晶體 |
| TWI646653B (zh) * | 2017-12-28 | 2019-01-01 | 新唐科技股份有限公司 | 橫向擴散金屬氧化物半導體場效電晶體 |
| TWI673880B (zh) * | 2018-11-21 | 2019-10-01 | 新唐科技股份有限公司 | 橫向擴散金氧半導體裝置 |
| DE102019130376B4 (de) | 2019-01-04 | 2024-11-07 | Infineon Technologies Ag | Siliziumcarbid-vorrichtung mit schottky-kontakt |
| US12069862B2 (en) * | 2021-07-23 | 2024-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor dies including low and high workfunction semiconductor devices |
| TWI856473B (zh) * | 2023-01-04 | 2024-09-21 | 世界先進積體電路股份有限公司 | 半導體裝置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5925910A (en) * | 1997-03-28 | 1999-07-20 | Stmicroelectronics, Inc. | DMOS transistors with schottky diode body structure |
| TWI235492B (en) * | 2004-02-24 | 2005-07-01 | System General Corp | High voltage LDMOS transistor having an isolated structure |
| TWI236138B (en) * | 2003-10-01 | 2005-07-11 | Taiwan Semiconductor Mfg | LDMOS device with isolation guard rings |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4989058A (en) * | 1985-11-27 | 1991-01-29 | North American Philips Corp. | Fast switching lateral insulated gate transistors |
| JP2712359B2 (ja) * | 1988-09-01 | 1998-02-10 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3232763B2 (ja) * | 1992-04-17 | 2001-11-26 | 富士電機株式会社 | 半導体装置、およびその駆動方法 |
| JP3172642B2 (ja) * | 1994-11-01 | 2001-06-04 | シャープ株式会社 | 半導体装置 |
| JPH0974142A (ja) * | 1995-09-06 | 1997-03-18 | New Japan Radio Co Ltd | 半導体集積回路装置 |
| US5886383A (en) | 1997-01-10 | 1999-03-23 | International Rectifier Corporation | Integrated schottky diode and mosgated device |
| US6593620B1 (en) * | 2000-10-06 | 2003-07-15 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
| JP2002134744A (ja) * | 2000-10-25 | 2002-05-10 | Nec Corp | 横型絶縁ゲート型電界効果トランジスタ及びその駆動方法 |
| JP2003017701A (ja) * | 2001-07-04 | 2003-01-17 | Denso Corp | 半導体装置 |
| JP2003023099A (ja) * | 2001-07-10 | 2003-01-24 | Nissan Motor Co Ltd | 電界効果トランジスタ |
| US6573562B2 (en) | 2001-10-31 | 2003-06-03 | Motorola, Inc. | Semiconductor component and method of operation |
| JP2005116876A (ja) * | 2003-10-09 | 2005-04-28 | Toshiba Corp | 半導体装置 |
-
2004
- 2004-06-23 US US10/875,105 patent/US7141860B2/en not_active Expired - Fee Related
-
2005
- 2005-05-11 CN CNB200580020781XA patent/CN100481493C/zh not_active Expired - Fee Related
- 2005-05-11 JP JP2007518063A patent/JP2008504680A/ja active Pending
- 2005-05-11 WO PCT/US2005/016254 patent/WO2006007070A2/en not_active Ceased
- 2005-05-11 KR KR1020067026921A patent/KR20070026625A/ko not_active Withdrawn
- 2005-05-11 EP EP05747825A patent/EP1759416A4/en not_active Withdrawn
- 2005-06-10 TW TW094119328A patent/TWI393255B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5925910A (en) * | 1997-03-28 | 1999-07-20 | Stmicroelectronics, Inc. | DMOS transistors with schottky diode body structure |
| US6133107A (en) * | 1997-03-28 | 2000-10-17 | Stmicroelectronics, Inc. | Process for co-integrating DMOS transistors with schottky diode body structure |
| TWI236138B (en) * | 2003-10-01 | 2005-07-11 | Taiwan Semiconductor Mfg | LDMOS device with isolation guard rings |
| TWI235492B (en) * | 2004-02-24 | 2005-07-01 | System General Corp | High voltage LDMOS transistor having an isolated structure |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200612556A (en) | 2006-04-16 |
| WO2006007070A2 (en) | 2006-01-19 |
| EP1759416A4 (en) | 2009-07-08 |
| JP2008504680A (ja) | 2008-02-14 |
| CN100481493C (zh) | 2009-04-22 |
| CN1973376A (zh) | 2007-05-30 |
| US7141860B2 (en) | 2006-11-28 |
| WO2006007070A3 (en) | 2006-05-26 |
| EP1759416A2 (en) | 2007-03-07 |
| US20050285188A1 (en) | 2005-12-29 |
| KR20070026625A (ko) | 2007-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |