JP2008504680A - Ｌｄｍｏｓトランジスタ - Google Patents

Ｌｄｍｏｓトランジスタ Download PDF

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Publication number
JP2008504680A
JP2008504680A JP2007518063A JP2007518063A JP2008504680A JP 2008504680 A JP2008504680 A JP 2008504680A JP 2007518063 A JP2007518063 A JP 2007518063A JP 2007518063 A JP2007518063 A JP 2007518063A JP 2008504680 A JP2008504680 A JP 2008504680A
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JP
Japan
Prior art keywords
region
doped region
device structure
doped
substantially continuous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007518063A
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English (en)
Japanese (ja)
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JP2008504680A5 (enExample
Inventor
ケムカ，ヴィシュヌ・ケイ
パルササラシィ，ヴィジャイ
ジュー，ロンファ
ボーズ，アミタヴァ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2008504680A publication Critical patent/JP2008504680A/ja
Publication of JP2008504680A5 publication Critical patent/JP2008504680A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/156—LDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2007518063A 2004-06-23 2005-05-11 Ｌｄｍｏｓトランジスタ Pending JP2008504680A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/875,105 US7141860B2 (en) 2004-06-23 2004-06-23 LDMOS transistor
PCT/US2005/016254 WO2006007070A2 (en) 2004-06-23 2005-05-11 Ldmos transistor

Publications (2)

Publication Number Publication Date
JP2008504680A true JP2008504680A (ja) 2008-02-14
JP2008504680A5 JP2008504680A5 (enExample) 2008-07-03

Family

ID=35504712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007518063A Pending JP2008504680A (ja) 2004-06-23 2005-05-11 Ｌｄｍｏｓトランジスタ

Country Status (7)

Country Link
US (1) US7141860B2 (enExample)
EP (1) EP1759416A4 (enExample)
JP (1) JP2008504680A (enExample)
KR (1) KR20070026625A (enExample)
CN (1) CN100481493C (enExample)
TW (1) TWI393255B (enExample)
WO (1) WO2006007070A2 (enExample)

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US7074658B2 (en) * 2003-05-05 2006-07-11 Vanguard International Semiconductor Corporatio Structure for an LDMOS transistor and fabrication method for thereof
US7608907B2 (en) * 2005-01-06 2009-10-27 Micrel, Inc. LDMOS gate controlled schottky diode
US20060163658A1 (en) * 2005-01-21 2006-07-27 Anderson Samuel J Monolithic MOSFET and schottky diode for mobile phone boost converter
JP4845410B2 (ja) * 2005-03-31 2011-12-28 株式会社リコー 半導体装置
US8004038B2 (en) * 2006-05-22 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV process
JP5222466B2 (ja) * 2006-08-09 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR100932137B1 (ko) * 2007-06-08 2009-12-16 주식회사 동부하이텍 수평형 디모스 소자의 구조 및 그 제조방법
US7541247B2 (en) * 2007-07-16 2009-06-02 International Business Machines Corporation Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication
JP5487852B2 (ja) * 2008-09-30 2014-05-14 サンケン電気株式会社 半導体装置
KR101522530B1 (ko) * 2008-12-24 2015-05-26 주식회사 동부하이텍 정전기 방전 보호 소자 및 그 제조 방법
US8525257B2 (en) * 2009-11-18 2013-09-03 Micrel, Inc. LDMOS transistor with asymmetric spacer as gate
US20110156810A1 (en) * 2009-12-30 2011-06-30 Intersil Americas Inc. Integrated dmos and schottky
US8878329B2 (en) * 2010-09-17 2014-11-04 United Microelectronics Corp. High voltage device having Schottky diode
US8587058B2 (en) * 2012-01-02 2013-11-19 United Microelectronics Corp. Lateral diffused metal-oxide-semiconductor device
CN103208520B (zh) * 2012-01-13 2017-06-23 联华电子股份有限公司 横向扩散金属氧化半导体元件
US8686502B2 (en) * 2012-03-19 2014-04-01 Texas Instruments Incorporated Schottky diode integrated into LDMOS
US9129990B2 (en) 2012-06-29 2015-09-08 Freescale Semiconductor, Inc. Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof
US20140001546A1 (en) 2012-06-29 2014-01-02 Hubert M. Bode Semiconductor device and driver circuit with a current carrying region and isolation structure interconnected through a resistor circuit, and method of manufacture thereof
US9142554B2 (en) 2012-06-29 2015-09-22 Freescale Semiconductor, Inc. Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof
US9111767B2 (en) 2012-06-29 2015-08-18 Freescale Semiconductor, Inc. Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof
CN103377612B (zh) * 2013-07-15 2016-06-15 四川长虹电器股份有限公司 一种改善等离子显示器emi低频超标的行扫描芯片控制方法
CN104701372B (zh) * 2013-12-06 2017-10-27 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制造方法
CN104752423B (zh) * 2013-12-31 2018-08-21 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
KR20160108835A (ko) * 2014-01-27 2016-09-21 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치
US9461639B2 (en) 2014-05-16 2016-10-04 Freescale Semiconductor, Inc. Semiconductor device and power circuit including a sense transistor for current sensing
CN115483211A (zh) 2014-08-19 2022-12-16 维西埃-硅化物公司 电子电路
KR102391348B1 (ko) * 2014-12-29 2022-04-28 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이를 포함하는 유기 발광 표시 장치
TWI641107B (zh) * 2017-12-25 2018-11-11 新唐科技股份有限公司 橫向擴散金屬氧化物半導體場效電晶體
TWI646653B (zh) * 2017-12-28 2019-01-01 新唐科技股份有限公司 橫向擴散金屬氧化物半導體場效電晶體
TWI673880B (zh) * 2018-11-21 2019-10-01 新唐科技股份有限公司 橫向擴散金氧半導體裝置
DE102019130376B4 (de) 2019-01-04 2024-11-07 Infineon Technologies Ag Siliziumcarbid-vorrichtung mit schottky-kontakt
US12069862B2 (en) * 2021-07-23 2024-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor dies including low and high workfunction semiconductor devices
TWI856473B (zh) * 2023-01-04 2024-09-21 世界先進積體電路股份有限公司 半導體裝置

Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH0267765A (ja) * 1988-09-01 1990-03-07 Nec Corp 半導体装置の製造方法
JPH0677506A (ja) * 1992-04-17 1994-03-18 Fuji Electric Co Ltd 半導体装置、およびその駆動方法
JPH08130249A (ja) * 1994-11-01 1996-05-21 Sharp Corp 半導体装置
JPH0974142A (ja) * 1995-09-06 1997-03-18 New Japan Radio Co Ltd 半導体集積回路装置
JP2002134744A (ja) * 2000-10-25 2002-05-10 Nec Corp 横型絶縁ゲート型電界効果トランジスタ及びその駆動方法
JP2003017701A (ja) * 2001-07-04 2003-01-17 Denso Corp 半導体装置
JP2003023099A (ja) * 2001-07-10 2003-01-24 Nissan Motor Co Ltd 電界効果トランジスタ
JP2005116876A (ja) * 2003-10-09 2005-04-28 Toshiba Corp 半導体装置

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US4989058A (en) * 1985-11-27 1991-01-29 North American Philips Corp. Fast switching lateral insulated gate transistors
US5886383A (en) 1997-01-10 1999-03-23 International Rectifier Corporation Integrated schottky diode and mosgated device
US5925910A (en) * 1997-03-28 1999-07-20 Stmicroelectronics, Inc. DMOS transistors with schottky diode body structure
US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6573562B2 (en) 2001-10-31 2003-06-03 Motorola, Inc. Semiconductor component and method of operation
US6924531B2 (en) * 2003-10-01 2005-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. LDMOS device with isolation guard rings
US6995428B2 (en) * 2004-02-24 2006-02-07 System General Corp. High voltage LDMOS transistor having an isolated structure

Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH0267765A (ja) * 1988-09-01 1990-03-07 Nec Corp 半導体装置の製造方法
JPH0677506A (ja) * 1992-04-17 1994-03-18 Fuji Electric Co Ltd 半導体装置、およびその駆動方法
JPH08130249A (ja) * 1994-11-01 1996-05-21 Sharp Corp 半導体装置
JPH0974142A (ja) * 1995-09-06 1997-03-18 New Japan Radio Co Ltd 半導体集積回路装置
JP2002134744A (ja) * 2000-10-25 2002-05-10 Nec Corp 横型絶縁ゲート型電界効果トランジスタ及びその駆動方法
JP2003017701A (ja) * 2001-07-04 2003-01-17 Denso Corp 半導体装置
JP2003023099A (ja) * 2001-07-10 2003-01-24 Nissan Motor Co Ltd 電界効果トランジスタ
JP2005116876A (ja) * 2003-10-09 2005-04-28 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
EP1759416A2 (en) 2007-03-07
CN100481493C (zh) 2009-04-22
KR20070026625A (ko) 2007-03-08
US7141860B2 (en) 2006-11-28
WO2006007070A3 (en) 2006-05-26
CN1973376A (zh) 2007-05-30
TWI393255B (zh) 2013-04-11
WO2006007070A2 (en) 2006-01-19
TW200612556A (en) 2006-04-16
EP1759416A4 (en) 2009-07-08
US20050285188A1 (en) 2005-12-29

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