TWI392578B - 即時壓印程序缺陷診斷技術 - Google Patents
即時壓印程序缺陷診斷技術 Download PDFInfo
- Publication number
- TWI392578B TWI392578B TW098106147A TW98106147A TWI392578B TW I392578 B TWI392578 B TW I392578B TW 098106147 A TW098106147 A TW 098106147A TW 98106147 A TW98106147 A TW 98106147A TW I392578 B TWI392578 B TW I392578B
- Authority
- TW
- Taiwan
- Prior art keywords
- template
- region
- substrate
- imprint lithography
- defect
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 45
- 230000007547 defect Effects 0.000 title claims description 38
- 230000008569 process Effects 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims description 61
- 230000007717 exclusion Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 29
- 230000007704 transition Effects 0.000 claims description 29
- 238000001459 lithography Methods 0.000 claims description 23
- 238000003384 imaging method Methods 0.000 claims description 22
- 238000000059 patterning Methods 0.000 claims description 8
- 238000004458 analytical method Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 description 42
- 239000012530 fluid Substances 0.000 description 7
- 238000004049 embossing Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000012631 diagnostic technique Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3142208P | 2008-02-26 | 2008-02-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200940322A TW200940322A (en) | 2009-10-01 |
| TWI392578B true TWI392578B (zh) | 2013-04-11 |
Family
ID=40998580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098106147A TWI392578B (zh) | 2008-02-26 | 2009-02-26 | 即時壓印程序缺陷診斷技術 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7815824B2 (enExample) |
| EP (1) | EP2252466A2 (enExample) |
| JP (1) | JP4995974B2 (enExample) |
| TW (1) | TWI392578B (enExample) |
| WO (1) | WO2009108323A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009153926A1 (ja) * | 2008-06-18 | 2009-12-23 | 株式会社ニコン | テンプレートの製造方法、テンプレートの検査方法及び検査装置、ナノインプリント装置、ナノインプリントシステム、並びにデバイス製造方法 |
| JP4660581B2 (ja) * | 2008-09-19 | 2011-03-30 | 株式会社東芝 | パターン形成方法 |
| US8715515B2 (en) * | 2009-03-23 | 2014-05-06 | Intevac, Inc. | Process for optimization of island to trench ratio in patterned media |
| JP2010286309A (ja) * | 2009-06-10 | 2010-12-24 | Toshiba Corp | ナノインプリント用テンプレートの検査方法 |
| NL2006004A (en) * | 2010-03-25 | 2011-09-27 | Asml Netherlands Bv | Imprint lithography. |
| JP5576822B2 (ja) * | 2011-03-25 | 2014-08-20 | 富士フイルム株式会社 | モールドに付着した異物の除去方法 |
| US20120261849A1 (en) | 2011-04-14 | 2012-10-18 | Canon Kabushiki Kaisha | Imprint apparatus, and article manufacturing method using same |
| JP6562707B2 (ja) * | 2015-05-13 | 2019-08-21 | キヤノン株式会社 | インプリント装置、インプリント方法及び物品の製造方法 |
| JP6799397B2 (ja) * | 2015-08-10 | 2020-12-16 | キヤノン株式会社 | インプリント装置、および物品の製造方法 |
| JP6157579B2 (ja) * | 2015-12-24 | 2017-07-05 | キヤノン株式会社 | インプリント方法、インプリント装置及び物品の製造方法 |
| JP6450790B2 (ja) * | 2017-03-02 | 2019-01-09 | ファナック株式会社 | 表示システムおよび表示方法 |
| CN117001964A (zh) * | 2022-06-23 | 2023-11-07 | 万华化学（宁波）有限公司 | 一种解决厚薄印缺陷的方法和验证模具 |
| US12326376B1 (en) * | 2022-12-21 | 2025-06-10 | Hrl Laboratories, Llc | Spike arrays for small displacement force measurement |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03225476A (ja) * | 1990-01-30 | 1991-10-04 | Kanebo Ltd | 捺印検査装置 |
| US20060076717A1 (en) * | 2002-07-11 | 2006-04-13 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US20070070338A1 (en) * | 2003-11-20 | 2007-03-29 | Junichi Tanaka | Method and device for examination of nonuniformity defects of patterns |
| TW200801796A (en) * | 2006-04-21 | 2008-01-01 | Molecular Imprints Inc | Method for detecting a particle in a nanoimprint lithography system |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3492446B2 (ja) * | 1995-05-22 | 2004-02-03 | 株式会社リコー | 光ディスク用スタンパ検査機 |
| US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| EP1258915A1 (en) * | 2001-05-17 | 2002-11-20 | Infineon Technologies SC300 GmbH & Co. KG | Method of detecting defects on a semiconductor device in a processing tool and an arrangement therefore |
| US7037639B2 (en) | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
| JP2005044843A (ja) * | 2003-07-23 | 2005-02-17 | Sii Nanotechnology Inc | ナノインプリントリソグラフィ用の原版の欠陥修正方法 |
| US7514114B2 (en) * | 2005-09-01 | 2009-04-07 | Palo Alto Research Center Incorporated | Detecting defective ejector in digital lithography system |
| JP4735280B2 (ja) * | 2006-01-18 | 2011-07-27 | 株式会社日立製作所 | パターン形成方法 |
| US20080026305A1 (en) | 2006-07-26 | 2008-01-31 | Wei Wu | Apparatus and method for alignment using multiple wavelengths of light |
| US8142702B2 (en) * | 2007-06-18 | 2012-03-27 | Molecular Imprints, Inc. | Solvent-assisted layer formation for imprint lithography |
-
2009
- 2009-02-25 US US12/392,663 patent/US7815824B2/en active Active
- 2009-02-26 WO PCT/US2009/001203 patent/WO2009108323A2/en not_active Ceased
- 2009-02-26 TW TW098106147A patent/TWI392578B/zh not_active IP Right Cessation
- 2009-02-26 EP EP09714659A patent/EP2252466A2/en not_active Withdrawn
- 2009-02-26 JP JP2010548717A patent/JP4995974B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03225476A (ja) * | 1990-01-30 | 1991-10-04 | Kanebo Ltd | 捺印検査装置 |
| US20060076717A1 (en) * | 2002-07-11 | 2006-04-13 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US20070070338A1 (en) * | 2003-11-20 | 2007-03-29 | Junichi Tanaka | Method and device for examination of nonuniformity defects of patterns |
| TW200801796A (en) * | 2006-04-21 | 2008-01-01 | Molecular Imprints Inc | Method for detecting a particle in a nanoimprint lithography system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4995974B2 (ja) | 2012-08-08 |
| JP2011513973A (ja) | 2011-04-28 |
| TW200940322A (en) | 2009-10-01 |
| WO2009108323A3 (en) | 2010-01-07 |
| WO2009108323A2 (en) | 2009-09-03 |
| US20090214761A1 (en) | 2009-08-27 |
| EP2252466A2 (en) | 2010-11-24 |
| US7815824B2 (en) | 2010-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |