TWI392017B - 製程處理室中陰極之ｒｆ接地 - Google Patents

製程處理室中陰極之ｒｆ接地 Download PDF

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Publication number
TWI392017B
TWI392017B TW098113783A TW98113783A TWI392017B TW I392017 B TWI392017 B TW I392017B TW 098113783 A TW098113783 A TW 098113783A TW 98113783 A TW98113783 A TW 98113783A TW I392017 B TWI392017 B TW I392017B
Authority
TW
Taiwan
Prior art keywords
substrate support
substrate
grounding
assembly
shadow frame
Prior art date
Application number
TW098113783A
Other languages
English (en)
Chinese (zh)
Other versions
TW201001533A (en
Inventor
John M White
Robin L Tiner
Beom Soo Park
Wendell T Blonigan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201001533A publication Critical patent/TW201001533A/zh
Application granted granted Critical
Publication of TWI392017B publication Critical patent/TWI392017B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
TW098113783A 2004-09-21 2005-07-27 製程處理室中陰極之ｒｆ接地 TWI392017B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/946,403 US7534301B2 (en) 2004-09-21 2004-09-21 RF grounding of cathode in process chamber

Publications (2)

Publication Number Publication Date
TW201001533A TW201001533A (en) 2010-01-01
TWI392017B true TWI392017B (zh) 2013-04-01

Family

ID=36072681

Family Applications (2)

Application Number Title Priority Date Filing Date
TW098113783A TWI392017B (zh) 2004-09-21 2005-07-27 製程處理室中陰極之ｒｆ接地
TW094125453A TWI314759B (en) 2004-09-21 2005-07-27 Rf grounding of cathode in process chamber

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW094125453A TWI314759B (en) 2004-09-21 2005-07-27 Rf grounding of cathode in process chamber

Country Status (5)

Country Link
US (2) US7534301B2 (cg-RX-API-DMAC7.html)
JP (2) JP5033319B2 (cg-RX-API-DMAC7.html)
KR (2) KR101441892B1 (cg-RX-API-DMAC7.html)
CN (2) CN102324367B (cg-RX-API-DMAC7.html)
TW (2) TWI392017B (cg-RX-API-DMAC7.html)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
JP2006313313A (ja) 2005-04-06 2006-11-16 Sony Corp 再生装置、設定切替方法および設定切替装置
US7722778B2 (en) * 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
US8381677B2 (en) * 2006-12-20 2013-02-26 Applied Materials, Inc. Prevention of film deposition on PECVD process chamber wall
WO2008079742A2 (en) * 2006-12-20 2008-07-03 Applied Materials, Inc. Prevention of film deposition on pecvd process chamber wall
US7968469B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
US7959735B2 (en) * 2007-02-08 2011-06-14 Applied Materials, Inc. Susceptor with insulative inserts
US8281739B2 (en) * 2007-03-01 2012-10-09 Applied Materials, Inc. RF shutter
JP4887202B2 (ja) * 2007-04-17 2012-02-29 東京エレクトロン株式会社 プラズマ処理装置及び高周波電流の短絡回路
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
US8597428B2 (en) * 2007-12-12 2013-12-03 Lam Research Corporation Vacuum sealing radio frequency (RF) and low frequency conducting actuator
KR100929153B1 (ko) * 2007-12-27 2009-12-01 세메스 주식회사 전원 전송부재 및 이의 제조 방법
US20090255798A1 (en) * 2008-04-12 2009-10-15 Gaku Furuta Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber
JP5683469B2 (ja) * 2008-10-09 2015-03-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 大型プラズマ処理チャンバのｒｆ復路
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
US8627783B2 (en) * 2008-12-19 2014-01-14 Lam Research Corporation Combined wafer area pressure control and plasma confinement assembly
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
JP2010161316A (ja) * 2009-01-09 2010-07-22 Ulvac Japan Ltd プラズマ処理装置
US9382621B2 (en) * 2009-02-04 2016-07-05 Applied Materials, Inc. Ground return for plasma processes
KR101634714B1 (ko) * 2009-05-13 2016-06-30 어플라이드 머티어리얼스, 인코포레이티드 양극산화처리된 샤워헤드
KR101081744B1 (ko) * 2009-08-17 2011-11-09 주성엔지니어링(주) 기판처리장치
KR200476124Y1 (ko) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ­전력공급 샤워헤드를 위한 편심 접지 복귀
KR101127757B1 (ko) * 2009-12-02 2012-03-23 주식회사 테스 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버
KR101039524B1 (ko) 2010-02-19 2011-06-09 주성엔지니어링(주) 플라즈마 처리 장치
TW201145440A (en) * 2010-06-09 2011-12-16 Global Material Science Co Ltd Shadow frame and manufacturing method thereof
KR101103450B1 (ko) * 2010-07-27 2012-01-09 주식회사 케이씨텍 기판 도금 장치
TW201324818A (zh) * 2011-10-21 2013-06-16 Applied Materials Inc 製造矽異質接面太陽能電池之方法與設備
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
WO2013078098A1 (en) * 2011-11-23 2013-05-30 Lam Research Corporation Multi zone gas injection upper electrode system
KR102011535B1 (ko) * 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
US20130160948A1 (en) * 2011-12-23 2013-06-27 Lam Research Corporation Plasma Processing Devices With Corrosion Resistant Components
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9230779B2 (en) * 2012-03-19 2016-01-05 Lam Research Corporation Methods and apparatus for correcting for non-uniformity in a plasma processing system
US9340866B2 (en) 2012-03-30 2016-05-17 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9633823B2 (en) * 2013-03-14 2017-04-25 Cardinal Cg Company Plasma emission monitor and process gas delivery system
WO2015116245A1 (en) * 2014-01-30 2015-08-06 Applied Materials, Inc. Gas confiner assembly for eliminating shadow frame
CN104294206B (zh) * 2014-10-09 2016-05-04 沈阳富创精密设备有限公司 一种半导体装备用抗高温蠕变接地基片的制备方法
US10134615B2 (en) * 2015-02-13 2018-11-20 Applied Materials, Inc. Substrate support with improved RF return
US20160348233A1 (en) * 2015-05-29 2016-12-01 Applied Materials, Inc. Grounding of conductive mask for deposition processes
KR102142557B1 (ko) * 2016-06-21 2020-08-07 어플라이드 머티어리얼스, 인코포레이티드 Rf 리턴 스트랩 차폐 커버
KR102173212B1 (ko) * 2016-06-24 2020-11-03 주식회사 원익아이피에스 기판처리장치
JP6683575B2 (ja) * 2016-09-01 2020-04-22 東京エレクトロン株式会社 プラズマ処理装置
KR102399343B1 (ko) * 2017-05-29 2022-05-19 삼성디스플레이 주식회사 화학기상 증착장치
CN110945159B (zh) 2017-07-28 2022-03-01 东京毅力科创株式会社 用于基板的后侧沉积的系统和方法
TWI704252B (zh) * 2017-09-04 2020-09-11 台灣積體電路製造股份有限公司 升舉裝置、化學氣相沉積裝置及方法
CN108103473B (zh) * 2017-12-18 2020-04-24 沈阳拓荆科技有限公司 用于半导体处理腔体的遮蔽装置及其使用方法
KR102523798B1 (ko) 2018-02-09 2023-04-21 주성엔지니어링(주) 마스크 홀더 및 이를 포함하는 기판처리장치
US11434569B2 (en) * 2018-05-25 2022-09-06 Applied Materials, Inc. Ground path systems for providing a shorter and symmetrical ground path
CN111326382B (zh) * 2018-12-17 2023-07-18 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
US11270870B2 (en) 2019-04-02 2022-03-08 Applied Materials, Inc. Processing equipment component plating
US20220236007A1 (en) * 2019-06-07 2022-07-28 Pyrogenesis Canada Inc. Non-water cooled consumable electrode vacuum arc furnace for continuous process
CN114502771A (zh) * 2019-08-02 2022-05-13 应用材料公司 射频功率返回路径
CN112447475B (zh) * 2019-09-05 2023-09-29 中微半导体设备(上海)股份有限公司 一种具有柔性电介质薄片的等离子体处理装置
US12354847B2 (en) * 2020-03-12 2025-07-08 Applied Materials, Inc. Methods and apparatus for conductance liners in semiconductor process chambers
JP7407645B2 (ja) * 2020-04-03 2024-01-04 東京エレクトロン株式会社 プラズマ処理装置
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
US11664247B2 (en) 2020-10-16 2023-05-30 Applied Materials, Inc. Dynamic interface for providing a symmetric radio frequency return path
US11887884B2 (en) * 2020-10-16 2024-01-30 Applied Materials, Inc. Pre-loaded bowl mechanism for providing a symmetric radio frequency return path
CN117355920A (zh) * 2021-04-01 2024-01-05 应用材料公司 用于使用等离子体形成薄膜的接地返回
US12378669B2 (en) 2022-01-28 2025-08-05 Applied Materials, Inc. Ground return for thin film formation using plasma

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5790365A (en) * 1996-07-31 1998-08-04 Applied Materials, Inc. Method and apparatus for releasing a workpiece from and electrostatic chuck
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US20010035132A1 (en) * 2000-04-27 2001-11-01 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4998178A (en) 1990-06-18 1991-03-05 Minnesota Mining And Manufacturing Company Adjustable, conductive body strap
KR100276093B1 (ko) * 1992-10-19 2000-12-15 히가시 데쓰로 플라스마 에칭방법
US5522937A (en) 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6024044A (en) 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
JP3710081B2 (ja) * 1997-11-30 2005-10-26 アルプス電気株式会社 プラズマ処理装置
US6063441A (en) 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US6773562B1 (en) 1998-02-20 2004-08-10 Applied Materials, Inc. Shadow frame for substrate processing
US6197438B1 (en) * 1998-03-11 2001-03-06 Roger Faulkner Foodware with ceramic food contacting surface
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6162332A (en) * 1998-05-07 2000-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for preventing arcing in sputter chamber
US6183564B1 (en) * 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
US6558504B1 (en) 1998-12-21 2003-05-06 Research Triangle Institute Plasma processing system and method
TW570856B (en) * 2001-01-18 2004-01-11 Fujitsu Ltd Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system
KR100738837B1 (ko) * 2001-02-13 2007-07-12 엘지.필립스 엘시디 주식회사 플라즈마화학증착 장치
US6417626B1 (en) * 2001-03-01 2002-07-09 Tokyo Electron Limited Immersed inductively—coupled plasma source
US20050189074A1 (en) * 2002-11-08 2005-09-01 Tokyo Electron Limited Gas processing apparatus and method and computer storage medium storing program for controlling same
US6527912B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Stacked RF excitation coil for inductive plasma processor
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US7100532B2 (en) 2001-10-09 2006-09-05 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
US7060545B1 (en) 2002-10-31 2006-06-13 Micrel, Inc. Method of making truncated power enhanced drift lateral DMOS device with ground strap
US6933442B2 (en) 2003-02-12 2005-08-23 Senior Industries, Inc. Methods and apparatus to secure a ground strap assembly to an electrically conductive member
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US7083702B2 (en) 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5790365A (en) * 1996-07-31 1998-08-04 Applied Materials, Inc. Method and apparatus for releasing a workpiece from and electrostatic chuck
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US20010035132A1 (en) * 2000-04-27 2001-11-01 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment

Also Published As

Publication number Publication date
KR20090057202A (ko) 2009-06-04
CN102324367A (zh) 2012-01-18
CN102324367B (zh) 2016-02-03
KR101185908B1 (ko) 2012-09-25
TW201001533A (en) 2010-01-01
JP2006104575A (ja) 2006-04-20
JP5037560B2 (ja) 2012-09-26
US20060060302A1 (en) 2006-03-23
CN1752281B (zh) 2011-08-24
CN1752281A (zh) 2006-03-29
JP5033319B2 (ja) 2012-09-26
US7534301B2 (en) 2009-05-19
KR20060051437A (ko) 2006-05-19
TW200611333A (en) 2006-04-01
US20090178617A1 (en) 2009-07-16
JP2009280913A (ja) 2009-12-03
TWI314759B (en) 2009-09-11
KR101441892B1 (ko) 2014-09-19

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