TWI387007B - 用以快速熱處理基材的適度控制法 - Google Patents

用以快速熱處理基材的適度控制法 Download PDF

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Publication number
TWI387007B
TWI387007B TW096108458A TW96108458A TWI387007B TW I387007 B TWI387007 B TW I387007B TW 096108458 A TW096108458 A TW 096108458A TW 96108458 A TW96108458 A TW 96108458A TW I387007 B TWI387007 B TW I387007B
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TW
Taiwan
Prior art keywords
substrate
temperature
region
power
heat treatment
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TW096108458A
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English (en)
Chinese (zh)
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TW200741882A (en
Inventor
拉尼思喬瑟分邁可
迪席特塔潘
傑寧斯狄恩
拉馬查倫巴拉蘇拉馬尼安
漢特亞倫
亞德霍沃夫甘
亞當布魯斯
張文樂
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應用材料股份有限公司
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Publication of TW200741882A publication Critical patent/TW200741882A/zh
Application granted granted Critical
Publication of TWI387007B publication Critical patent/TWI387007B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Control Of Temperature (AREA)
TW096108458A 2006-03-30 2007-03-12 用以快速熱處理基材的適度控制法 TWI387007B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/393,423 US7398693B2 (en) 2006-03-30 2006-03-30 Adaptive control method for rapid thermal processing of a substrate

Publications (2)

Publication Number Publication Date
TW200741882A TW200741882A (en) 2007-11-01
TWI387007B true TWI387007B (zh) 2013-02-21

Family

ID=38564171

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108458A TWI387007B (zh) 2006-03-30 2007-03-12 用以快速熱處理基材的適度控制法

Country Status (7)

Country Link
US (1) US7398693B2 (enExample)
EP (1) EP2005134A2 (enExample)
JP (1) JP2009532877A (enExample)
KR (1) KR101019932B1 (enExample)
CN (1) CN101495847A (enExample)
TW (1) TWI387007B (enExample)
WO (1) WO2007114987A2 (enExample)

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TWI381452B (zh) * 2008-08-29 2013-01-01 Applied Materials Inc 用於擴大溫度高溫測定之方法與設備
US8147137B2 (en) * 2008-11-19 2012-04-03 Applied Materials, Inc. Pyrometry for substrate processing
US8109669B2 (en) * 2008-11-19 2012-02-07 Applied Materials, Inc. Temperature uniformity measurement during thermal processing
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US20110185969A1 (en) * 2009-08-21 2011-08-04 Varian Semiconductor Equipment Associates, Inc. Dual heating for precise wafer temperature control
CN102598217B (zh) * 2009-10-28 2015-03-25 丽佳达普株式会社 金属有机化学汽相淀积设备及其温度控制方法
JP5495920B2 (ja) * 2010-04-23 2014-05-21 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
CN103390553B (zh) * 2012-05-11 2016-08-03 无锡华润上华科技有限公司 快速热退火方法
US8772055B1 (en) * 2013-01-16 2014-07-08 Applied Materials, Inc. Multizone control of lamps in a conical lamphead using pyrometers
US10403521B2 (en) * 2013-03-13 2019-09-03 Applied Materials, Inc. Modular substrate heater for efficient thermal cycling
JP6096588B2 (ja) * 2013-05-21 2017-03-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10032876B2 (en) 2014-03-13 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact silicide having a non-angular profile
US9543171B2 (en) 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
US20150372099A1 (en) * 2014-06-19 2015-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact silicide formation using a spike annealing process
KR20230173740A (ko) * 2015-01-30 2023-12-27 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버를 위한 램프 가열
JP6574344B2 (ja) * 2015-06-23 2019-09-11 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10571337B2 (en) 2017-05-26 2020-02-25 Applied Materials, Inc. Thermal cooling member with low temperature control
SG10201705708YA (en) * 2017-05-26 2018-12-28 Applied Materials Inc Detector for low temperature transmission pyrometry
US10281335B2 (en) 2017-05-26 2019-05-07 Applied Materials, Inc. Pulsed radiation sources for transmission pyrometry
WO2018218201A1 (en) * 2017-05-26 2018-11-29 Applied Materials, Inc. Continuous spectra transmission pyrometry
WO2019070382A1 (en) 2017-10-06 2019-04-11 Applied Materials, Inc. INFRARED LAMP RADIATION PROFILE CONTROL BY DESIGNING AND POSITIONING LAMP FILAMENT
KR102049814B1 (ko) * 2018-07-09 2019-11-28 (주)하이비젼시스템 램프를 활용한 비접촉식 급속 온도 제어 장치
CN112437975B (zh) * 2018-08-22 2024-08-09 玛特森技术公司 在低温下对工件进行热处理和温度测量的系统和方法
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KR102841602B1 (ko) 2019-02-04 2025-08-01 어플라이드 머티어리얼스, 인코포레이티드 온도 오프셋 및 구역 제어 튜닝
US11545375B2 (en) * 2019-06-17 2023-01-03 Applied Materials, Inc. Hybrid control system for workpiece heating
KR102836193B1 (ko) * 2020-03-24 2025-07-17 스미도모쥬기가이고교 가부시키가이샤 프로세스모니터 및 프로세스모니터방법
EP4531497A3 (en) 2020-09-04 2025-06-25 Watlow Electric Manufacturing Company Method and system for controlling an electric heater using control on energy
US12169098B2 (en) 2020-11-05 2024-12-17 Applied Materials, Inc. RTP substrate temperature one for all control algorithm
WO2022215417A1 (ja) * 2021-04-09 2022-10-13 株式会社堀場製作所 放射温度測定装置及び放射温度測定方法
US12480223B2 (en) * 2021-07-16 2025-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for use with a substrate chamber
US12085965B2 (en) * 2021-08-31 2024-09-10 Applied Materials, Inc. Systems, methods, and apparatus for correcting thermal processing of substrates
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KR20250095675A (ko) * 2022-10-28 2025-06-26 어플라이드 머티어리얼스, 인코포레이티드 반도체 기판들의 낮은 온도 측정
KR102828195B1 (ko) * 2023-03-16 2025-07-03 에이피시스템 주식회사 급속 열처리 장치 및 급속 열처리 방법
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Also Published As

Publication number Publication date
WO2007114987A2 (en) 2007-10-11
JP2009532877A (ja) 2009-09-10
US7398693B2 (en) 2008-07-15
KR101019932B1 (ko) 2011-03-08
US20070238202A1 (en) 2007-10-11
TW200741882A (en) 2007-11-01
CN101495847A (zh) 2009-07-29
EP2005134A2 (en) 2008-12-24
KR20080113086A (ko) 2008-12-26
WO2007114987A3 (en) 2008-10-23

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