CN101495847A - 快速热处理基板的适应性性控制方法 - Google Patents

快速热处理基板的适应性性控制方法 Download PDF

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Publication number
CN101495847A
CN101495847A CNA2007800125058A CN200780012505A CN101495847A CN 101495847 A CN101495847 A CN 101495847A CN A2007800125058 A CNA2007800125058 A CN A2007800125058A CN 200780012505 A CN200780012505 A CN 200780012505A CN 101495847 A CN101495847 A CN 101495847A
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CN
China
Prior art keywords
substrate
temperature
power
zone
region
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Pending
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CNA2007800125058A
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English (en)
Chinese (zh)
Inventor
J·M·瑞尼西
T·迪克西特
D·詹宁斯
B·拉马钱德兰
A·亨特
W·阿德霍尔德
B·亚当斯
W·T·张
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN101495847A publication Critical patent/CN101495847A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Control Of Temperature (AREA)
CNA2007800125058A 2006-03-30 2007-03-07 快速热处理基板的适应性性控制方法 Pending CN101495847A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/393,423 2006-03-30
US11/393,423 US7398693B2 (en) 2006-03-30 2006-03-30 Adaptive control method for rapid thermal processing of a substrate

Publications (1)

Publication Number Publication Date
CN101495847A true CN101495847A (zh) 2009-07-29

Family

ID=38564171

Family Applications (1)

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CNA2007800125058A Pending CN101495847A (zh) 2006-03-30 2007-03-07 快速热处理基板的适应性性控制方法

Country Status (7)

Country Link
US (1) US7398693B2 (enExample)
EP (1) EP2005134A2 (enExample)
JP (1) JP2009532877A (enExample)
KR (1) KR101019932B1 (enExample)
CN (1) CN101495847A (enExample)
TW (1) TWI387007B (enExample)
WO (1) WO2007114987A2 (enExample)

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CN103390553A (zh) * 2012-05-11 2013-11-13 无锡华润上华科技有限公司 快速热退火方法
US9165808B2 (en) 2009-10-28 2015-10-20 Ligadp Co., Ltd. Metal organic chemical vapor deposition device and temperature control method therefor
CN108955889A (zh) * 2017-05-26 2018-12-07 应用材料公司 用于低温透射测温的探测器
CN119556748A (zh) * 2024-12-03 2025-03-04 盛吉盛半导体科技(北京)有限公司 一种快速热处理设备温度控制中的目标函数设计方法

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US8104951B2 (en) * 2006-07-31 2012-01-31 Applied Materials, Inc. Temperature uniformity measurements during rapid thermal processing
US20080090393A1 (en) * 2006-10-10 2008-04-17 Wolfgang Aderhold Ultra shallow junction with rapid thermal anneal
US8575521B2 (en) * 2008-04-01 2013-11-05 Mattson Technology, Inc. Monitoring witness structures for temperature control in RTP systems
TWI395272B (zh) * 2008-05-02 2013-05-01 Applied Materials Inc 用於旋轉基板之非徑向溫度控制系統
US8219857B2 (en) * 2008-06-26 2012-07-10 International Business Machines Corporation Temperature-profiled device fingerprint generation and authentication from power-up states of static cells
US8452166B2 (en) * 2008-07-01 2013-05-28 Applied Materials, Inc. Apparatus and method for measuring radiation energy during thermal processing
TWI381452B (zh) * 2008-08-29 2013-01-01 Applied Materials Inc 用於擴大溫度高溫測定之方法與設備
US8147137B2 (en) * 2008-11-19 2012-04-03 Applied Materials, Inc. Pyrometry for substrate processing
US8109669B2 (en) * 2008-11-19 2012-02-07 Applied Materials, Inc. Temperature uniformity measurement during thermal processing
JP2012525002A (ja) * 2009-04-21 2012-10-18 アプライド マテリアルズ インコーポレイテッド 基板冷却制御
US20110185969A1 (en) * 2009-08-21 2011-08-04 Varian Semiconductor Equipment Associates, Inc. Dual heating for precise wafer temperature control
JP5495920B2 (ja) * 2010-04-23 2014-05-21 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
US8772055B1 (en) * 2013-01-16 2014-07-08 Applied Materials, Inc. Multizone control of lamps in a conical lamphead using pyrometers
US10403521B2 (en) * 2013-03-13 2019-09-03 Applied Materials, Inc. Modular substrate heater for efficient thermal cycling
JP6096588B2 (ja) * 2013-05-21 2017-03-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10032876B2 (en) 2014-03-13 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact silicide having a non-angular profile
US9543171B2 (en) 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
US20150372099A1 (en) * 2014-06-19 2015-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Contact silicide formation using a spike annealing process
KR20230173740A (ko) * 2015-01-30 2023-12-27 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버를 위한 램프 가열
JP6574344B2 (ja) * 2015-06-23 2019-09-11 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
US10410832B2 (en) * 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10571337B2 (en) 2017-05-26 2020-02-25 Applied Materials, Inc. Thermal cooling member with low temperature control
US10281335B2 (en) 2017-05-26 2019-05-07 Applied Materials, Inc. Pulsed radiation sources for transmission pyrometry
WO2018218201A1 (en) * 2017-05-26 2018-11-29 Applied Materials, Inc. Continuous spectra transmission pyrometry
WO2019070382A1 (en) 2017-10-06 2019-04-11 Applied Materials, Inc. INFRARED LAMP RADIATION PROFILE CONTROL BY DESIGNING AND POSITIONING LAMP FILAMENT
KR102049814B1 (ko) * 2018-07-09 2019-11-28 (주)하이비젼시스템 램프를 활용한 비접촉식 급속 온도 제어 장치
CN112437975B (zh) * 2018-08-22 2024-08-09 玛特森技术公司 在低温下对工件进行热处理和温度测量的系统和方法
EP3899401A4 (en) * 2018-12-21 2023-01-18 Kryptos Biotechnologies, Inc. METHOD AND SYSTEM FOR HEATING AND MEASURING TEMPERATURE USING PATTERNED THIN FILMS
KR102841602B1 (ko) 2019-02-04 2025-08-01 어플라이드 머티어리얼스, 인코포레이티드 온도 오프셋 및 구역 제어 튜닝
US11545375B2 (en) * 2019-06-17 2023-01-03 Applied Materials, Inc. Hybrid control system for workpiece heating
KR102836193B1 (ko) * 2020-03-24 2025-07-17 스미도모쥬기가이고교 가부시키가이샤 프로세스모니터 및 프로세스모니터방법
EP4531497A3 (en) 2020-09-04 2025-06-25 Watlow Electric Manufacturing Company Method and system for controlling an electric heater using control on energy
US12169098B2 (en) 2020-11-05 2024-12-17 Applied Materials, Inc. RTP substrate temperature one for all control algorithm
WO2022215417A1 (ja) * 2021-04-09 2022-10-13 株式会社堀場製作所 放射温度測定装置及び放射温度測定方法
US12480223B2 (en) * 2021-07-16 2025-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for use with a substrate chamber
US12085965B2 (en) * 2021-08-31 2024-09-10 Applied Materials, Inc. Systems, methods, and apparatus for correcting thermal processing of substrates
US20230297740A1 (en) * 2022-03-15 2023-09-21 Applied Materials, Inc. Uniform radiation heating control architecture
KR20250095675A (ko) * 2022-10-28 2025-06-26 어플라이드 머티어리얼스, 인코포레이티드 반도체 기판들의 낮은 온도 측정
KR102828195B1 (ko) * 2023-03-16 2025-07-03 에이피시스템 주식회사 급속 열처리 장치 및 급속 열처리 방법
US12438012B2 (en) * 2023-04-07 2025-10-07 Applied Materials, Inc. Automatic control of substrates

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JP4121612B2 (ja) * 1998-05-15 2008-07-23 大日本スクリーン製造株式会社 基板処理装置、基板処理方法および記録媒体
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JP2003318121A (ja) * 2002-04-26 2003-11-07 Trecenti Technologies Inc 半導体装置の製造方法
JP3966137B2 (ja) * 2002-09-20 2007-08-29 株式会社Ｓｕｍｃｏ 熱処理方法および熱処理装置
JP2005123286A (ja) * 2003-10-15 2005-05-12 Hitachi Kokusai Electric Inc 基板処理装置
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9165808B2 (en) 2009-10-28 2015-10-20 Ligadp Co., Ltd. Metal organic chemical vapor deposition device and temperature control method therefor
CN103390553A (zh) * 2012-05-11 2013-11-13 无锡华润上华科技有限公司 快速热退火方法
CN103390553B (zh) * 2012-05-11 2016-08-03 无锡华润上华科技有限公司 快速热退火方法
CN108955889A (zh) * 2017-05-26 2018-12-07 应用材料公司 用于低温透射测温的探测器
CN108955889B (zh) * 2017-05-26 2022-04-26 应用材料公司 用于低温透射测温的探测器
CN119556748A (zh) * 2024-12-03 2025-03-04 盛吉盛半导体科技(北京)有限公司 一种快速热处理设备温度控制中的目标函数设计方法
CN119556748B (zh) * 2024-12-03 2025-09-19 盛吉盛半导体科技(北京)有限公司 一种快速热处理设备温度控制中的目标函数设计方法

Also Published As

Publication number Publication date
WO2007114987A2 (en) 2007-10-11
JP2009532877A (ja) 2009-09-10
US7398693B2 (en) 2008-07-15
KR101019932B1 (ko) 2011-03-08
TWI387007B (zh) 2013-02-21
US20070238202A1 (en) 2007-10-11
TW200741882A (en) 2007-11-01
EP2005134A2 (en) 2008-12-24
KR20080113086A (ko) 2008-12-26
WO2007114987A3 (en) 2008-10-23

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Open date: 20090729