TWI386475B - 接著薄膜、連接方法及接合體 - Google Patents

接著薄膜、連接方法及接合體 Download PDF

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Publication number
TWI386475B
TWI386475B TW097123600A TW97123600A TWI386475B TW I386475 B TWI386475 B TW I386475B TW 097123600 A TW097123600 A TW 097123600A TW 97123600 A TW97123600 A TW 97123600A TW I386475 B TWI386475 B TW I386475B
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Taiwan
Prior art keywords
adhesive layer
film
substrate
electronic component
adhesive
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TW097123600A
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English (en)
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TW200914569A (en
Inventor
Tomoyuki Ishimatsu
Hiroki Ozeki
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Sony Chem & Inf Device Corp
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Publication of TW200914569A publication Critical patent/TW200914569A/zh
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Publication of TWI386475B publication Critical patent/TWI386475B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
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    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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Description

接著薄膜、連接方法及接合體
本發明係關於可使電子零件連接於基板的接著薄膜、連接方法及接合體。
自以往以來，當在基板連接電子零件或配線板時，係使用異方導電性接著劑。異方導電性接著劑係具有黏結劑及分散在黏結劑中的導電性粒子。
在基板之配置有端子的面、與電子零件之配置有端子的面之間配置異方導電性接著劑，當進行加熱按壓時，經軟化的黏結劑會由基板的端子與電子零件的端子之間被擠開，導電性粒子被夾持在基板的端子與電子零件的端子之間，將基板與電子零件作電性連接。
但是，當黏結劑被擠開時，有時導電性粒子的一部分會與黏結劑一起被擠開，經擠開的導電性粒子會流入基板之鄰接的端子間、或電子零件之鄰接的端子間，而使鄰接的端子間會因導電性粒子而發生短路(short)。
此外，當導電性粒子由基板的端子與電子零件的端子之間被擠開時，由基板的端子與電子零件的端子夾持導電性粒子的數量會變少，導通可靠性亦較差。
(專利文獻1)日本特開2006-32335號公報
(專利文獻2)日本特開平7-230840號公報
本發明之課題在於解決前述習知之各問題，以達成以下目的。亦即，
本發明之目的在提供不會發生短路(short)而可使電子零件連接於基板的接著薄膜、連接方法及接合體。
用以解決前述課題之手段係如以下所示。亦即，
<1>一種接著薄膜，係具有第一接著劑層、及與前述第一接著劑層相密接的第二接著劑層，前述第一接著劑層之在開始硬化之硬化開始溫度以下的最低黏度係高於前述第二接著劑層之在開始硬化之硬化開始溫度以下的最低黏度，將前述第一接著劑層與前述第二接著劑層分別朝向基板與電子零件側，當將前述基板與前述電子零件加熱按壓時，將前述電子零件連接於前述基板的接著薄膜，其特徵為：在前述第一接著劑層分散有導電性粒子，前述第一接著劑層的膜厚係未達前述導電性粒子的平均粒徑的2倍。
<2>如前述<1>所記載之接著薄膜，其中，第二接著劑層的最低黏度係含有導電性粒子之狀態下的第一接著劑層的最低黏度的0.05倍以上、0.2倍以下。
<3>如前述<1>至<2>中之任一者所記載之接著薄膜，其中，第一接著劑層形成為最低黏度的溫度、與第二接著劑層形成為最低黏度的溫度的差為10℃以下。
<4>一種連接方法，其特徵為：透過如前述<1>至<3>中之任一者所記載之接著薄膜而使基板的端子與電子零件的端子相對向，將前述基板與前述電子零件加熱按 壓，藉此使前述接著薄膜中的導電性粒子夾持在前述基板的端子與前述電子零件的端子之間，而將前述基板與前述電子零件相連接。
<5>一種接合體，其特徵為：具備使用如前述<4>所記載之連接方法所連接的基板與電子零件。
根據本發明，可解決前述習知之各問題，可達成前述目的，而可提供不會發生短路(short)而可使電子零件連接於基板的接著薄膜、連接方法及接合體。
第五圖係顯示接著劑之黏度與溫度之關係的曲線圖，該圖的橫軸係表示接著劑的溫度，縱軸係黏度(MPa)。其中，第五圖的縱軸係以對數表示。
如第五圖所示，當含有熱硬化性樹脂的接著劑升溫時，接著劑係至某溫度(在此係約100℃)範圍為止，溫度愈高，則黏度愈低，但若超過某溫度時，即開始熱硬化性樹脂的聚合而使接著劑硬化，因此黏度轉而上升。
本發明中所謂最低黏度係指例如接著劑層所含熱硬化性樹脂之聚合開始的硬化開始溫度時的黏度，亦即由降低轉而上升時的黏度。
第五圖的元件符號A係表示分散有導電性粒子之狀態下的接著劑(第一接著劑層)的黏度與溫度的關係，該圖的元件符號N係表示未分散有導電性粒子之接著劑(第二接著劑層)的黏度與溫度的關係。
當第一接著劑層及第二接著劑層含有熱硬化性樹脂、熱可塑性樹脂等時，藉由改變熱硬化性樹脂的種類或調配 量、熱可塑性樹脂的種類或調配量，如第五圖所示，可使第一接著劑層的最低黏度高於第二接著劑層的最低黏度。
第一接著劑層在到達至少最低黏度之前，由於黏度高於第二接著劑層，因此至少在硬化開始前，流動性比第二接著劑層低，分散在第一接著劑層之導電性粒子的移動性亦較低。
在第一接著劑層及第二接著劑層以添加硬化劑為佳，俾以促進熱硬化性樹脂的聚合。藉由改變第一接著劑層及第二接著劑層所使用的熱硬化性樹脂的種類或調配量、硬化劑的種類或調配量，如第五圖所示，可將第一接著劑層的硬化開始溫度、與第二接著劑層的硬化開始溫度的差形成為10℃以下。
在本發明中，由於由相對向的端子間擠開導電性粒子的量變少，因此在相對向的端子間所捕捉的導電性粒子數會增加，鄰接的端子間不會因導電性粒子而短路(short)，可獲得導通可靠性較高的連接體。
 (接著薄膜)
本發明的接著薄膜係至少具有第一接著劑層、及與前述第一接著劑層相密接的第二接著劑層，另外含有視需要而適當選擇的其他層。
＜第一接著劑層＞
前述第一接著劑層係至少含有導電性粒子，另外含有 視需要而適當選擇的其他成分。
-導電性粒子-
前述導電性粒子並無特別限制，可按照目的而適當選擇，列舉如在金屬粒子及樹脂粒子的表面形成有金屬鍍敷層者等。
-其他成分-
前述其他成分並無特別限制，可按照目的而適當選擇，列舉如：熱硬化性樹脂、熱可塑性樹脂、矽烷偶聯劑、及無機填料等。
在前述第一接著劑層添加有前述熱可塑性樹脂，會提升第一接著劑層與第二接著劑層的接著力，添加有前述矽烷偶聯劑，會提升第一接著劑層與被著體的密接性，添加有前述無機填料，會提升難燃性及鄰接的端子間的絕緣性。
-熱硬化性樹脂-
前述熱硬化性樹脂並無特別限制，可按照目的而適當選擇，列舉如：環氧樹脂、聚胺酯樹脂、及熱硬化性聚酯樹脂等。
依前述熱硬化性樹脂之種類，並不需要在前述第一接著劑層及後述之第二接著劑層添加硬化劑，但是添加有硬化劑，會使硬化速度變快。
--硬化劑--
前述硬化劑並無特別限制，可按照目的而適當選擇。例如，當熱硬化性樹脂為環氧樹脂時，若將經微膠囊化的胺系硬化劑用在硬化劑，則環氧樹脂會進行陰離子聚合， 若將鎓鹽或硫鎓鹽用在硬化劑，則環氧樹脂會進行陽離子聚合，此外，當熱硬化性樹脂為熱硬化性聚酯時，若將有機過氧化物用在硬化劑，則進行自由基聚合。
--熱可塑性樹脂--
前述熱可塑性樹脂並無特別限制，可按照目的而適當選擇，列舉如：苯氧基樹脂、熱可塑性聚酯樹脂、及氟樹脂等。
--矽烷偶聯劑--
前述矽烷偶聯劑並無特別限制，可按照目的而適當選擇，列舉如：乙烯基矽烷、環氧矽烷、胺基矽烷、巰基矽烷(mercaptosilane)、異氰酸矽烷等。
--無機填料--
前述無機填料並無特別限制，可按照目的而適當選擇，列舉如：二氧化矽、氧化鋁、氧化鈦等。
前述第一接著劑層的膜厚並無特別限定，以未達導電性粒子之平均粒徑的2倍為佳，以導電性粒子之平均粒徑的50%以上、150%以下為更佳。
＜第二接著劑層＞
前述第二接著劑層若為與前述第一接著劑層密接者，則無特別限制，可視需要而適當選擇。前述第二接著劑層係例如含有熱硬化性樹脂，另外含有視需要予以適當選擇之其他成分而成。其中，前述熱硬化性樹脂係如前述第一接著劑層中所記載者。
-其他成分-
前述其他成分並無特別限制，可按照目的而適當選擇，列舉如：熱可塑性樹脂、矽烷偶聯劑、無機填料、及導電性粒子等。其中，前述熱可塑性樹脂、前述矽烷偶聯劑、及前述無機填料係如前述第一接著劑層中所記載者。前述導電性粒子係如前述第一接著劑層中所記載者，但是前述第二接著劑層中之導電性粒子的密度係小於前述第一接著劑層中之導電性粒子的密度。
在前述第二接著劑層添加有熱可塑性樹脂，會提升與前述第二接著劑層的接著力，添加有矽烷偶聯劑，會提升前述第二接著劑層與被著體的密接性，添加有無機填料，會提升難燃性及鄰接的端子間的絕緣性。
此外，若藉由加熱而使黏度降低，則並不需要使前述第一接著劑層及前述第二接著劑層之二者含有熱硬化性樹脂。例如，亦可使前述第一接著劑層及前述第二接著劑層之任一者或二者不含有熱硬化性樹脂，而僅含有熱可塑性樹脂作為樹脂成分。
前述第一接著劑層及前述第二接著劑層係以DSC(示差掃描熱分析)的發熱峰值溫度區域為60℃至140℃為佳。當低於60℃時，將接著薄膜暫時貼在被著體，在暫時固定時，會有第一接著劑層及第二接著劑層硬化之虞，當高於140℃時，正式壓接所需時間會超過20秒鐘，量産性變差。其中，出現DSC之發熱峰值的溫度係硬化開始溫度，亦即，在本發明中，係以硬化開始溫度為60℃以上、140℃以下為佳。
當前述第一接著劑層與前述第二接著劑層在硬化開始溫度差異過大時，在第一端子及第二端子夾持導電性粒子之前，會有任一接著劑層硬化之虞，因此前述第一接著劑層的硬化開始溫度與前述第二接著劑層的硬化開始溫度的差係以10℃以下為佳。
前述第一接著劑層及前述第二接著劑層係以10Pa‧s以上、100,000Pa‧s以下為佳。若未達10Pa‧s，當黏度降低時，容易捲入氣泡，若高於100,000Pa‧s，則有未擠入被著體，而無法獲得良好的連接電阻的情形。
前述第二接著劑層的最低黏度若低於前述第一接著劑層的最低黏度，即無特別限定，但以前述第一接著劑層的最低黏度的0.05倍以上、0.2倍以下為較佳。
＜其他層＞
以其他層而言，並未特別限制，可按照目的而適當選擇。
在此，就本發明之接著薄膜之一例，一面參照圖示，一面說明如下。
在第一圖中係顯示本發明之接著薄膜10之一例。
接著薄膜10係具有：第一接著劑層11、及配置在第一接著劑層11表面的第二接著劑層12，在第一接著劑層11分散有導電性粒子15。導電性粒子15係僅分散在第一接著劑層11，在第二接著劑層12並未分散有導電性粒子。
在此，在接著薄膜10之第二接著劑層12側的面密接配置有剝離薄膜19，如第二圖所示，捲繞密接有剝離薄膜 19之狀態下的接著薄膜10而形成滾筒18時，第一接著劑層11的表面會密接於剝離薄膜19的背面。
在第三A圖中顯示作為被著體之基板3之一例。基板3係例如LCD面板等，具有如玻璃板之類的基板本體31、及配置在基板本體31表面上的複數個第一端子35。
如第二圖所示，由滾筒18送出接著薄膜10，使第一接著劑層11由剝離薄膜19背面剝離，使第一接著劑層11的表面露出，將接著薄膜10切成預定形狀。
使經切離之接著薄膜10之露出第一接著劑層11的面與基板3之露出第一端子35的面相密接並暫時黏貼(第三B圖)。
當剝離薄膜19密接在經切離之接著薄膜10時，在暫時黏貼前、或暫時黏貼後，將剝離薄膜19剝離，而使第二接著劑層12表面露出。
暫時黏貼接著薄膜10的被著體並非限定為基板3，亦可使電子零件4之配置有第二端子45之側的面與第二接著劑層12表面密接而暫時黏貼之後，使基板3之配置有第一端子35的面密接在第一接著劑層11的表面而進行暫時固定。
在第三C圖中顯示連接於基板3之被著體4，且平面形狀比基板3小的電子零件4，電子零件4係具有零件本體41、及配置在零件本體41之一面的複數個第二端子45。
使用本發明之接著薄膜10進行連接的被著體4並未特別限定，例如有半導體晶片、電阻元件、COF (Chip On Film) 元件、及TAB (Tape Automated Bonding)元件等。
各第一端子35之中心位置間的距離(間距)、與各第二端子45之中心位置間的距離(凸塊(bump)間空間)變為相等，以使第二端子45分別位在各第一端子35的正上方位置的方式，使電子零件4對位，如第三D圖所示，使電子零件4之配置有第二端子45之側的面密接在第二接著劑層12表面而予以暫時固定。
在基板3的表面及電子零件4的表面，係在鄰接的第一端子35間與鄰接的第二端子45之間分別形成有凹部，凹部的深度形成為在基板3表面及電子零件4的表面分別突出的第一端子35及第二端子45的高度。
第一端子35的高度係比第二端子45的高度低，在予以暫時固定的狀態下，在第一端子35間的凹部底面係密接有或相間離有第一接著劑層11，與第一接著劑層11之間的距離均比第二端子45間之凹部的底面與第二接著劑層12之間的距離短。
在該狀態下，當在基板3及電子零件4的任一者或二者抵碰加熱手段，一面以比暫時固定時更高的溫度予以加熱一面按壓來進行正式壓接時，第一端子35間的凹部底面係與第一接著劑層11大致上相密接，因此即使第一接著劑層11經加熱而予以軟化，第一接著劑層11並不會由相對向的第一端子35與第二端子45之間被擠開至鄰接的第一端子35間。
而且，第一接著劑層11的最低黏度係高於第二接著劑 層12的最低黏度，因此第一接著劑層11係難以更加流入相鄰接的第一端子35間。
相對於此，第二端子45間的凹部底面係與第二接著劑層12相間離，因此藉由加熱而使第二接著劑層12軟化時，第二接著劑層12係由相對向的第一端子35與第二端子45之間被擠開至鄰接的第二端子45間。
在第二接著劑層12並未分散或分散有導電性粒子15，其密度均小於第一接著劑層11。因此，即使第二接著劑層12被擠開至鄰接的第二端子45間，第二端子45間並不會短路(short)。
第二端子45的高度係大於第二接著劑層12的膜厚及導電性粒子15的平均粒徑的合計，第二端子45係擠開第二接著劑層12而使前端到達第一接著劑層11，另外擠開第一接著劑層11，在第一端子35與第二端子45之間夾持導電性粒子15(第四圖)。
第一接著劑層11的膜厚係形成為未達導電性粒子15之粒徑的2倍，導電性粒子15在第一接著劑層11的膜厚方向並未堆積2個以上，因此當以第一端子35與第二端子45夾持導電性粒子15時，導電性粒子15不會由第一端子35與第二端子45之間朝橫向移動。
由於在第一端子35與第二端子45之間所捕捉的導電性粒子15數量變多，因此第一端子35與第二端子45之間的導通電阻降低，導電性粒子15不會朝橫向移動，因而鄰接的第一端子35間、或鄰接的第二端子45間不會短路 (short)。
第一端子35及第二端子45在電子式連接的狀態下更加持續加熱按壓，第一接著劑層11及第二接著劑層12分別升溫至硬化開始溫度以上時，第一接著劑層11及第二接著劑層12在包圍第一端子35及第二端子45周圍的狀態下硬化，電子零件4亦以機械式連接於基板3。
以下藉由實施例及比較例，更進一步具體的説明本發明，但本發明並非由下述實施例而予以限定。
＜接著劑的製作＞
使屬於固形樹脂的苯氧基樹脂溶解於溶劑(甲苯/乙酸乙酯=1/1)，而獲得固形份30重量%的溶解品。
接著，以使相對於苯氧基樹脂的調配比例成為下述表1之「ACF」之欄位所記載的調配比例的方式，將硬化劑、環氧樹脂、無機填料、矽烷偶聯劑、及導電性粒子添加及混合在溶解品中，最後製成以使固形份成為40重量%的方式利用甲苯予以調整而成的連接材料的溶解品。
上述表1中，商品名稱「HX3941HP」係旭化成化學(股)公司製的微膠囊型胺系環氧硬化劑，商品名稱「EP828」係日本環氧樹脂(股)公司製的雙酚A型液狀環氧樹脂，商品名稱「YP70」係東都化成公司製之在主骨架含有雙酚A與雙酚B的苯氧基樹脂，商品名稱「FX280」係東都化成公司製的茀骨架苯氧基樹脂，商品名稱「KBE403」係信越化學工業(股)公司製的環氧矽烷，商品名稱「AUL704」係積水化學工業(股)公司製的Ni/Au鍍敷樹脂粒子(平均粒徑4μm)。
在2支圓柱狀的不銹鋼棒之間夾持使乾燥後之連接材料的膜厚分別形成為18μm、8μm、4μm的測定器(gauge)，在50μm厚度的剝離薄膜上載置連接材料的溶解品，將載置有溶解品的剝離薄膜通過上述不銹鋼棒之間之後，在溫度90℃的烘箱放置3分鐘而使溶劑揮發，藉此形成膜厚18μm、8μm及4μm的3種接著劑層(ACF)。
接著，除了將調配比例改變為上述表1之「NCF-1」及「NCF-2」之欄位所記載者、將膜厚改變為8μm與14μm以外，以與上述ACF相同的方法製成接著劑層(NCF-1、NCF-2)。
＜黏度測定＞
使用將以上述表1之ACF、NCF-1及NCF-2所示調配比例所製成的接著劑層分別相疊合而形成為100μm厚者，使用應力控制型流變儀(rheometer)(Haake公司製RS150)來測定到達最低黏度及最低黏度時的溫度(到達溫度)。其 中，以錐板(cone)而言，係使用直徑8mm、角度2度者，測定範圍為30℃至250℃。將測定結果記載於下述表2。
由上述表1及表2可知，無關於有無導電性粒子15，導電性粒子15以外之組成相同的ACF及NCF-1的最低黏度與到達溫度相同。另一方面，NCF-2係與ACF及NCF-1的到達黏度相同，但最低黏度較小。
可知NCF-2係在作為熱硬化性樹脂之環氧樹脂及硬化劑的調配比例、作為熱可塑性樹脂的苯氧基樹脂的種類及調配比例、及無機填料的調配比例與ACF及NCF-1不同，因此可藉由改變熱硬化性樹脂、硬化劑、熱可塑性樹脂、及無機填料等之接著劑成分的種類或調配量，來改變最低黏度。
＜接著薄膜的製作＞
使膜厚4μm的ACF、膜厚14μm的NCF-1及NCF-2利用下述表3的組合相貼合，製成實施例1、實施例2、比較例1及比較例2的接著薄膜。
將膜厚18μm的ACF作為比較例1的接著薄膜。此外，除了將ACF中之導電性粒子的密度由每1mm2 8,000個改變為3,000個以外，以與實施例1相同的構成，製成實施例2的接著薄膜。
＜安裝步驟＞
以被著體而言，備妥IC晶片(評估用IC、材質：矽、尺寸：6.0mm×6.0mm、厚度：0.4mm、凸塊：金凸釘(stud)、凸塊厚：20μm、凸塊面積：60μm×60μm、凸塊間空間20μm、間距：80μm)、及ITO塗覆玻璃(評估用ITO玻璃、康寧(Corning)公司製、品名：1737F、玻璃尺寸：縱50mm×橫30mm×厚度0.5mm、ITO焊墊尺寸：60μm×60μm、間距：80μm)。
首先，在ITO塗覆玻璃上，透過緩衝材料(膜厚70μm的鐵氟龍(註冊商標))，將壓接機(工具尺寸8.0mm×8.0mm)抵碰在被切割成7.0mm×7.0mm的實施例1、實施例2、比較例1、及比較例2的接著薄膜，以80℃、1MPa、2秒鐘的暫時壓接條件予以暫時黏貼。
接著將IC晶片定位而暫時固定在ITO塗覆玻璃上之後，將與用在暫時黏貼者相同的壓接機透過緩衝材料(膜 厚70μm的鐵氟龍(註冊商標))而抵碰在IC晶片，以190℃、3MPa、10秒鐘的正式壓接條件進行加熱按壓，將IC晶片連接於ITO塗覆玻璃，而獲得實施例1、實施例2、比較例1、及比較例2的連接體。
其中，凸塊及ITO焊墊由於表面大小為60μm×60μm，因此連接凸塊及ITO焊墊的連接面積為3,600μm2 。
關於該等4種連接體，對於下述「粒子捕捉數」、「捕捉效率」、「導通電阻」、及「短路發生率」進行調查。
[粒子捕捉數]
在正式壓接後，針對20個凸塊，對殘留在各凸塊之下的導電性粒子進行計數。
[捕捉效率]
捕捉效率係以百分率表示在正式壓接後有幾個粒子被捕捉的值。具體而言，當將IC晶片暫時固定時，針對20個凸塊調查存在於各凸塊下之導電性粒子數量(平均)，將該導電性粒子數量及正式壓接後的粒子捕捉數(平均)代入下述式(1)而求出。
捕捉效率(%)=(正式壓接後之粒子捕捉數)/(IC晶片暫時固定後存在於IC晶片凸塊下的粒子數)×100………式(1)
[導通電阻]
在正式壓接後，求出IC晶片的凸塊與ITO焊墊之間的導通電阻(單位：Ω)。將「粒子捕捉數」的最大值、最小值、平均、「捕捉效率」、及「導通電阻」的測定結果記載 於下述表4。
由上述表4可知，相較於比較例1及2，實施例1及2的捕捉效率較高。實施例2中，導電性粒子密度雖然只為實施例1、比較例1及比較例2的一半，但是粒子捕捉數及導通電阻與比較例1及比較例2為相同程度。
由以上可知，若使第一接著劑層的最低黏度高於第二接著劑層的最低黏度，而且使第一接著劑層的膜厚小至未達導電性粒子之粒徑的2倍左右，則即使不加高導電性粒子的密度，亦可獲得較高的導通可靠性。
[短路發生率]
使用實施例1、實施例2、比較例1及比較例2的接著薄膜，將上述IC晶片及ITO塗覆玻璃相連接時，凸塊及ITO焊墊除了以在水平方向分離10μm的方式予以錯位(miss-alignment)以外，係以與上述「安裝步驟」相同的條件製作連接體。對鄰接的ITO焊墊間施加30V的電壓，測定絕緣電阻，以絕緣電阻為1.0×10-6 Ω以下設為短路，而對短路發生數進行計數(初期)。
將連接體在導電狀態下、85℃、濕度85%的環境下放置500小時後，對短路發生數進行計數(高溫高濕放置)。在200個部位計數短路發生數，求出初期及高溫高濕放置後的短路發生率(%)。其結果顯示於下述表5。
由上述表5可知，與比較例1及2相比較，實施例1及2中，初期及高溫高濕後的短路發生率較少，導電性粒子由相對向的端子間移動至鄰接的端子間的量較少。
以上係使以薄膜狀予以成形的第一接著劑層11與第二接著劑層12相貼合而製成接著薄膜10，但本發明並非限定於此。
例如，製作使第二接著劑層12的材料溶解或分散在溶劑的塗液，若在將該塗液塗佈在第一接著劑層11的表面後予以乾燥，可將第二接著劑層12密接配置於第一接著劑層11表面。
此外，製作使第一接著劑層11的材料及導電性粒子15溶解或分散在溶劑的塗液，若將該塗液塗佈在第二接著劑層12的表面後予以乾燥，則可在第二接著劑層12的表面密接配置第一接著劑層11。
第一接著劑層11及第二接著劑層12並非限定於密接 在相同的剝離薄膜19的表面與背面的情形，亦可分別使其密接於各自的剝離薄膜19。
亦可未將接著劑薄膜化，而將分散有導電性粒子15的膏狀接著劑直接塗佈在基板3而形成第一接著劑層11之後，再將第二接著劑層12密接配置在第一接著劑層11表面。
此外，亦可在電子零件4塗佈膏狀接著劑，而形成第二接著劑層12後，在第二接著劑層12表面密接配置第一接著劑層11。
3‧‧‧基板
4‧‧‧電子零件
10‧‧‧接著薄膜
11‧‧‧第一接著劑層
12‧‧‧第二接著劑層
15‧‧‧導電性粒子
18‧‧‧滾筒
19‧‧‧剝離薄膜
31‧‧‧基板本體
35‧‧‧第一端子
41‧‧‧零件本體
45‧‧‧第二端子
第一圖係顯示本發明之接著薄膜之一例的剖視圖。
第二圖係顯示將接著薄膜捲繞在滾筒之狀態的側視圖。
第三A圖係說明將電子零件連接於基板之步驟的剖視圖(其1)。
第三B圖係說明將電子零件連接於基板之步驟的剖視圖(其2)。
第三C圖係說明將電子零件連接於基板之步驟的剖視圖(其3)。
第三D圖係說明將電子零件連接於基板之步驟的剖視圖(其4)。
第四圖係顯示電子零件被連接於基板之狀態的剖視圖。
第五圖係顯示黏度與溫度之關係的曲線圖。
10‧‧‧接著薄膜
11‧‧‧第一接著劑層
12‧‧‧第二接著劑層
15‧‧‧導電性粒子
19‧‧‧剝離薄膜

Claims (8)

  1. 一種接著薄膜，該接著薄膜具有兩層構造，係具有第一接著劑層、及與前述第一接著劑層相密接的第二接著劑層，前述第一接著劑層之在開始硬化之硬化開始溫度以下的最低黏度係高於前述第二接著劑層之在開始硬化之硬化開始溫度以下的最低黏度，將前述第一接著劑層與前述第二接著劑層分別朝向基板與電子零件側，當將前述基板與前述電子零件加熱按壓時，將前述電子零件連接於前述基板的接著薄膜，其特徵為：在前述第一接著劑層分散有導電性粒子，前述第一接著劑層的膜厚係未達前述導電性粒子的平均粒徑的2倍。
  2. 如申請專利範圍第1項之接著薄膜，其中，第二接著劑層的最低黏度係含有導電性粒子之狀態下的第一接著劑層的最低黏度的0.05倍以上、0.2倍以下。
  3. 如申請專利範圍第1項之接著薄膜，其中，第一接著劑層形成為最低黏度的溫度、與第二接著劑層形成為最低黏度的溫度的差為10℃以下。
  4. 如申請專利範圍第1項之接著薄膜，其中導電性粒子的粒子捕捉率為70%以上。
  5. 如申請專利範圍第1項之接著薄膜，其中導電性粒子在第一接著劑層的膜厚方向並未堆積2個以上。
  6. 如申請專利範圍第1項之接著薄膜，其中第一接著劑層的導電性粒子密度為3000/mm2 ~8000/mm2 。
  7. 一種連接方法，其特徵為：透過如申請專利範圍第1項之接著薄膜而使基板的端子與電子零件的端子相對向，將前述基板與前述電子零件加熱按壓，藉此使前述接著薄膜中的導電性粒子夾持在前述基板的端子與前述電子零件的端子之間，而將前述基板與前述電子零件相連接。
  8. 一種接合體，其係包含基板、電子零件及接著薄膜，其特徵在於該接合體係使用如申請專利範圍第1至6項中任一項之接著薄膜來連接基板與電子零件。
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