CN101755022A - 粘合薄膜、连接方法及接合体 - Google Patents

粘合薄膜、连接方法及接合体 Download PDF

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CN101755022A
CN101755022A CN200880021279A CN200880021279A CN101755022A CN 101755022 A CN101755022 A CN 101755022A CN 200880021279 A CN200880021279 A CN 200880021279A CN 200880021279 A CN200880021279 A CN 200880021279A CN 101755022 A CN101755022 A CN 101755022A
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binder layer
terminal
mentioned
substrate
electronic unit
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CN101755022B (zh
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石松朋之
大关裕树
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Dexerials Corp
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Sony Chemical and Information Device Corp
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Abstract

本发明的目的为提供一种能够不引起短路(Short)地将电子部件连接到基板上的粘合薄膜、连接方法及接合体。粘合薄膜,包括:第一粘合剂层和粘附于上述第一粘合剂层的第二粘合剂层,并且,所述第一粘合剂层在开始固化的固化开始温度以下温度的最低粘度,高于所述第二粘合剂层在开始固化的固化开始温度以下温度的最低粘度,将上述第一粘合剂层和上述第二粘合剂层分别朝向基板和电子部件一侧,热挤压上述基板和上述电子部件,对上述电子部件和上述基板进行连接,其特征在于,上述第一粘合剂层中分散有导电性粒子,上述第一粘合剂层的膜厚度小于上述导电性粒子平均粒径的2倍。

Description

粘合薄膜、连接方法及接合体
技术领域
本发明涉及能将电子部件连接到基板上的粘合薄膜,连接方法及接合体。
背景技术
一直以来,将电子部件或线路板连接到基板上时都使用各向异导电性粘合剂。各向异导电性粘合剂含有粘结剂和分散于粘结剂中的导电性粒子。在配置了基板端子的表面与配置了电子部件端子的表面之间,配置各向异导电性粘合剂,热挤压,则被软化的粘结剂从基板端子与电子部件端子之间被挤出,导电性粒子被夹持在基板端子与电子部件端子之间,电性连接基板和电子部件。
但是,当粘结剂被挤出时,一部分导电性粒子也会随着粘结剂一起被挤出,被挤出的导电性粒子将会流入基板上的邻接端子之间,或者流入电子部件的邻接端子之间,从而邻接的端子之间由于导电性粒子发生短路(Short)。同时,随着导电性粒子从基板端子与电子部件端子之间被挤出,被基板端子和电子部件端子所夹持的导电性粒子数也变少,导通可靠性也随其变低。专利文献1:日本专利特开2006-32335号公报专利文献2:日本专利特开平7-230840号公报
发明内容
本发明的课题为,解决上述现有诸问题,实现如下目的:即,本发明的目的为,提供一种能够不引起短路(Short)地将电子部件连接到基板上的粘合薄膜、连接方法及接合体。
解决上述课题的方案为如下所示:即,<1>一种粘合薄膜,包括:第一粘合剂层和粘附于上述第一粘合剂层的第二粘合剂层,并且,所述第一粘合剂层在开始固化的固化开始温度以下温度的最低粘度,高于所述第二粘合剂层在开始固化的固化开始温度以下温度的最低粘度,将上述第一粘合剂层和上述第二粘合剂层分别朝向基板和电子部件一侧,热挤压上述基板和上述电子部件,对上述电子部件和上述基板进行连接,其特征在于,上述第一粘合剂层中分散有导电性粒子,上述第一粘合剂层的膜厚度小于上述导电性粒子平均粒径的2倍。<2>如上述<1>所述的粘合薄膜,第二粘合剂层最低粘度为,含有导电性粒子状态下的第一粘合剂层最低粘度的0.05倍以上、0.2倍以下。<3>如上述<1>至<2>任意一项所述的粘合薄膜,第一粘合剂层变成最低粘度的温度和第二粘合剂层变成最低粘度的温度的差为10℃以下。<4>一种连接方法,其特征在于,隔着上述<1>至<3>中的任意一项所述粘合薄膜对峙基板端子和电子部件端子,通过热挤压上述基板和上述电子部件,将上述粘合薄膜中的导电性粒子夹持于上述基板端子与上述电子部件端子之间,从而连接上述基板和上述电子部件。<5>一种接合体,其特征在于,具备使用上述<4>所述的连接方法进行连接的基板和电子部件。
根据本发明,则能解决上述现有的诸问题,能实现上述目的,提供能够不引起短路(Short)地将电子部件连接到基板上的粘合薄膜、连接方法及接合体。
图5是表示粘合剂的粘度与温度关系的图表,该图横轴表示粘合剂的温度,纵轴表示粘度(MPa)。其中,图5的纵轴是以对数表示。如图5所示,当含有热固化性树脂的粘合剂升温时,到某温度(在此约100℃)范围为止,粘合剂随着温度变高其粘度下降,但是超过某温度,则热固化性树脂开始聚合,粘合剂发生固化,所以粘度转变成上升趋势。
本发明中,最低粘度是指,如粘合剂层中所含的热固化性树脂开始聚合的固化开始温度时的粘度,即从降低转变为上升时的粘度。图5中的符号A表示分散导电性粒子的状态下的粘合剂(第一粘合剂层)的粘度和温度关系,该图中的符号N表示未分散导电性粒子的粘合剂(第二粘合剂层)的粘度和温度关系。
当第一粘合剂层和第二粘合剂层含有热固化性树脂、热塑性树脂等时,可通过改变热固化性树脂的种类或配合量,热塑性树脂的种类或配合量而如图5所示地将第一粘合剂层的最低粘度控制成高于第二粘合剂层的最低粘度。
由于第一粘合剂层至少在达到最低粘度为止,其粘度高于第二粘合剂层,因此至少在固化开始之前,其流动性低于第二粘合剂层,被分散在第一粘合剂层中的导电性粒子的移动性也低。
在第一粘合剂层及第二粘合剂层中,为了促进热固化性树脂的聚合,优选添加固化剂。可通过改变第一粘合剂层及第二粘合剂层所使用的热固化性树脂的种类或配合量、固化剂的种类或配合量而如图5所示地,将第一粘合剂层固化开始温度与第二粘合剂层固化开始温度之差控制在10℃以下。
本发明中,由于从对峙的端子之间挤出的导电性粒子的量变少,所以对峙的端子所捕捉的导电性粒子的数增加,邻接的端子间不会因导电性粒子而发生短路(Short),可获得导电可靠性高的连接体。
附图说明
图1为本发明的粘合薄膜的一个例子的剖面图。图2为表示将粘合薄膜缠绕于滚筒上的状态的侧视图。图3A为用于说明将电子部件连接到基板的工序的剖面图(其1)。图3B为用于说明将电子部件连接到基板的工序的剖面图(其2)。图3C为用于说明将电子部件连接到基板的工序的剖面图(其3)。图3D为用于说明将电子部件连接到基板的工序的剖面图(其4)。图4为表示电子部件被连接到基板上的状态的剖面图。图5为表示粘度与温度关系的图表。
具体实施方式
(粘合薄膜)本发明的粘合薄膜至少具有第一粘合剂层以及粘附于上述第一粘合剂层的第二粘合剂层,还具有根据需要适宜选择的其他层。
<第一粘合剂层>上述第一粘合剂层至少含有导电性粒子,还含有根据需要适宜选择的其他成分。
-导电性粒子-对于上述导电性粒子,无特别限制,可根据目的适宜选择,例如,在金属粒子及树脂粒子的表面上形成有金属镀层的导电性粒子。
-其他成分-对于上述其他成分,无特别限制,可根据目的适宜选择,例如,可选择热固化性树脂、热塑性树脂、硅烷偶联剂以及无机填充料等。上述第一粘合剂层中,添加上述热塑性树脂,则能提高第一粘合剂层和第二粘合剂层之间的粘合力,添加上述硅烷偶联剂,则能提高第一粘合剂层和被粘合物之间的粘附性,添加上述无机填充料,则能提高难燃性以及邻接的端子之间的绝缘性。
-热固化性树脂-对于上述热固化性树脂,无特别限制,可根据目的适宜选择,例如,可选择环氧树脂、氨甲酸酯树脂以及热固化性聚酯树脂等。
根据上述热固化性树脂的种类,则无需向上述第一粘合剂层及后述的第二粘合剂层添加固化剂,不过添加固化剂能使固化速度变快。
-固化剂-对于上述固化剂,无特别限制,可根据目的适宜选择。例如,热固化性树脂为环氧树脂时,选择微胶囊化的胺系固化剂作为固化剂则环氧树脂发生阴离子聚合,选择鎓盐和锍盐作为固化剂则环氧树脂发生阳离子聚合。当热固化性树脂为热固化性聚酯时,选择有机过氧化物作为固化剂则发生辐射聚合。
-热塑性树脂-对于上述热塑性树脂,无特别限制,可根据目的适宜选择,例如,可选择苯氧树脂、热塑性聚酯树脂以及氟树脂等。
-硅烷偶联剂-对于上述硅烷偶联剂,无特别限制,可根据目的适宜选择,例如,可选择乙烯硅烷、环氧硅烷、氨基硅烷、巯基硅烷、异氰酸硅烷等。
-无机填充料-对于上述无机填充料,无特别限制,可根据目的适宜选择,例如,可选择硅石、氧化铝、二氧化钛等。
对于上述第一粘合剂层的膜厚,无特别限定,但优选未满导电性粒子平均粒径的2倍,更优选导电性粒子平均粒径的50%以上、150%以下。
<第二粘合剂层>对于上述第二粘合剂层,只要粘附于上述第一粘合剂层则无特别限制,可根据需要适宜选择。例如,上述第二粘合剂层含有热固化性树脂,且含有根据需要适宜选择的其他成分。其中,上述热固化性树脂如同上述第一粘合剂层中所记载。
-其他的成分-对于上述其他的成分,无特别限制,可根据目的适宜选择,例如,可选择热塑性树脂、硅烷偶联剂、无机填充料以及导电性粒子等。其中,上述热塑性树脂、上述硅烷偶联剂以及上述无机填充料如同上述第一粘合剂层中所记载。上述导电性粒子虽然与上述第一粘合剂层中所记载的相同,但在上述第二粘合剂层中的导电性粒子的密度小于上述第一粘合剂层中的导电性粒子的密度。
上述第二粘合剂层中,添加热塑性树脂则能提高上述第二粘合剂层的粘合力,添加硅烷偶联剂则能提高上述第二粘合剂层和被粘合物之间的粘附性,添加无机填充料则能提高难燃性及邻接端子之间的绝缘性。
并且,通过加热粘度若下降则无需在上述第一粘合剂层及上述第二粘合剂层的双方中均加入热固化性树脂。例如,在上述第一粘合剂层及上述第二粘合剂层的任意一个中或者双方中均不加入热固化性树脂,作为树脂成分仅含热塑性树脂即可。
上述第一粘合剂层及上述第二粘合剂层优选为,DSC(差示扫描量热法)的放热峰温度区域为60℃~140℃。小于60℃,则可能会导致在将粘合薄膜临时粘贴、临时固定到被粘合物上时,第一粘合剂层及第二粘合剂层已先固化的问题,而高于140℃,则主压接所需时间超过20秒,批量生产性降低。其中,DSC的放热峰出现的温度是固化开始温度,即本发明固化开始温度优选为60℃以上、140℃以下。
上述第一粘合剂层和上述第二粘合剂层之间,若固化开始温度差过大,则在第一端子与第二端子挟持导电性粒子之前,其中一个粘合剂层可能会发生已先固化的情况,所以,上述第一粘合剂层的固化开始温度与上述第二粘合剂层的固化开始温度之差优选在10℃以下。
上述第一粘合剂层及上述第二粘合剂层优选为,10Pa·s以上、100000Pa·s以下。未满10Pa·s,则在粘度降低时容易卷入气泡,高于100000Pa·s,则有时无法将被粘合物压入,不能得到良好的连接电阻。
对于上述第二粘合剂层的最低粘度,只要低于上述第一粘合剂层的最低粘度则无特别限定,但更优选为上述第一粘合剂层最低粘度的0.05倍以上、0.2倍以下。
<其他层>对于其他层,无特别限制,可根据目的适宜选择。
以下,参照附图对本发明的粘合薄膜的一个例子进行说明。
图1为本发明的粘合薄膜10的一个例子。粘合薄膜10具有第一粘合剂层11和配置在第一粘合剂层11表面上的第二粘合剂层12,第一粘合剂层11中分散有导电性粒子15。只在第一粘合剂层11中分散有导电性粒子15,第二粘合剂层12中未分散导电性粒子。
在此,粘合薄膜10的第二粘合剂层12一侧表面上,粘附配置有剥离薄膜19,如图2所示,对粘附有剥离薄膜19状态的粘合薄膜10进行卷绕形成滚筒18,则第一粘合剂层11的表面与剥离薄膜19的背面将会粘附。
图3A表示作为被粘合物的基板3的一个例子。例如,基板3为LCD面板等,其具有基板主体31,如玻璃板,以及配置在基板主体31表面上的多个第一端子35。
如图2所示,从滚筒18持续导出粘合薄膜10,将第一粘合剂层11从剥离薄膜19的背面剥离,露出第一粘合剂层11的表面,以预定形状切取粘合薄膜10。
将切取的粘合薄膜10的第一粘合剂层11露出表面粘附在基板3的第一端子35露出表面上,进行临时粘贴(图3B)。在切取的粘合薄膜10上粘附有剥离薄膜19时,临时粘贴前,或临时粘贴之后,对剥离薄膜19进行剥离,露出第二粘合剂层12的表面。
临时粘贴粘合薄膜10的被粘合物并不局限于基板3,还可以将电子部件4的配置有第二端子45一侧的表面粘附于第二粘合剂层12表面进行临时粘贴之后,在第一粘合剂层11表面上粘附基板3的配置有第一端子35的表面,进行临时固定。
图3C中表示被连接在基板3上的被粘合物4,即平面形状小于基板3的电子部件4。电子部件4具有部件主体41以及被配置在部件主体41一侧面上的多个第二端子45。
对于用本发明的粘合薄膜10进行连接的被粘合物4无特别限定,例如可以是半导体芯片、电阻元件、COF(Chip On Film)设备和TAB(Tape Automated Bonding)设备等。
各第一端子35的中心位置间的距离(节距),以及与各第二端子45的中心位置间的距离(突起间空间)相同,使各个第二端子45位于各第一端子35的正上方位置的方式,对电子部件4进行对位,如图3D所示地在第二粘合剂层12表面上粘附电子部件4的配置有第二端子45一侧表面,进行临时固定。
在基板3的表面以及电子部件4的表面上,在邻接的第一端子35之间以及邻接的第二端子45之间分别形成有凹部,凹部的深度同于分别突出于基板3表面以及电子部件4表面上的第一端子35以及第二端子45的高度。
第一端子35的高度低于第二端子45的高度,在进行了临时固定的状态下,或第一端子35间的凹部底面上粘附第一粘合剂层11,或即使相互间有段距离,该与第一粘合剂层11之间的距离也小于第二端子45间的凹部底面与第二粘合剂层12之间的距离。
在该状态下,对基板3以及电子部件4中的任意一方或双方施加加热装置,以高于临时固定时的温度边加热边挤压进行主压接,则第一端子35间的凹部底面将会几乎粘附于第一粘合剂层11上,所以即使第一粘合剂层11被加热软化,第一粘合剂层11也不会从对峙的第一端子35与第二端子45之间被挤到邻接的第一端子35之间。而且,第一粘合剂层11的最低粘度高于第二粘合剂层12的最低粘度,所以第一粘合剂层11难以流入进一步邻接的第一端子35之间。
与此相对,第二端子45间的凹部底面与第二粘合剂层12之间有段距离,所以第二粘合剂层12因加热而软化,则第二粘合剂层12从对峙的第一端子35与第二端子45之间被挤到邻接的第二端子45之间。
第二粘合剂层12中,或未分散导电性粒子15,或即使分散,其密度也小于第一粘合剂层11。因此,即使邻接的第二端子45之间挤入第二粘合剂层12,第二端子45之间也不会发生短路(Short)。
第二端子45的高度大于第二粘合剂层12膜厚与导电性粒子15平均粒径的总和,第二端子45挤退第二粘合剂层12,前端到达第一粘合剂层11,并且进一步挤退第一粘合剂层11,在第一端子35和第二端子45之间夹持导电性粒子15(图4)。
第一粘合剂层11的膜厚被制成未满导电性粒子15的粒径的2倍,而导电性粒子15在第一粘合剂层11膜厚方向上不会层叠两个以上,所以在第一端子35与第二端子45之间夹持导电性粒子15时,导电性粒子15不会从第一端子35与第二端子45之间横向移动。
第一端子35与第二端子45之间被捕捉的导电性粒子15的个数将变多,所以第一端子35与第二端子45之间的导通电阻下降,由于导电性粒子15不会横向移动,所以不会在邻接的第一端子35之间,或者邻接的第二端子45之间发生短路(Short)。
在第一端子35和第二端子45电性连接的状态下,进一步持续进行热挤压,第一粘合剂层11和第二粘合剂层12分别升温至固化开始温度以上,则第一粘合剂层11及第二粘合剂层12以包围第一端子35和第二端子45周围的状态固化,电子部件4将在基板3上以机械方式被连接。
以下,根据实施例及对比例,进一步具体说明本发明,但本发明并不局限于以下的实施例。
<粘合剂的制备>将固态树脂苯氧树脂溶解于溶剂(甲苯/醋酸乙酯=1/1)中,从而获得固态组分30重量%的溶解品。接着,以相对于苯氧树脂的配合比成为下述表1的「ACF」栏所述的配合比的方式,向溶解品添加和混合固化剂、环氧树脂、无机填充料、硅烷偶联剂以及导电性粒子,最终,制取了用甲苯调节成固态组分40重量%的粘接材料溶解品。
表1:粘合剂的组成
Figure G2008800212794D00101
(固态组分、软化点栏中的“-”表示未测定)
上述表1中,商品名「HX3941HP」是旭化成化学(株)公司制微胶囊型胺系环氧固化剂,商品名[EP828]为日本环氧树脂(株)公司制作的双酚A型液状环氧树脂,商品名「YP70」是东都化成公司制造的主骨骼中含有双酚A和双酚B的苯氧树脂,商品名「FX280」是东都化成公司制芴骨骼苯氧树脂,商品名[KBE403]为信越化学工业(株)公司制作的环氧硅烷偶联剂,商品名「AUL704」是积水化学工业(株)公司制镀Ni/Au树脂粒子(平均粒径4μm)。
在两根圆柱状不锈钢棒之间夹持使干燥后的粘接材料膜厚分别成为18μm、8μm、4μm的量规,在50μm厚度的剥离薄膜上搭载粘接材料溶解品,从上述不锈钢棒之间通过搭载了溶解品的剥离薄膜之后,在90℃温度的烤炉中放置三分钟挥发溶剂,从而制取了18μm、8μm和4μm三种膜厚的粘合剂层(ACF)。
其次,将配合比改为上述表1的「NCF-1」及「NCF-2」栏中记载的配合比,将膜厚改成8μm和14μm之外,用上述ACF同样的方法制造了粘合剂层(NCF-1,NCF-2)。
<粘度测定>采用各自叠合成100μm厚的以上述表1的ACF、NCF-1和NCF-2所示的配合比制造的粘合剂层,利用应力控制型流变仪(Haake公司制RS150),测定了最低粘度和到达最低粘度时的温度(到达温度)。其中,使用直径8mm、角度2度的锥体,测定范围为30℃~250℃。测定结果如表2所示。
表2:最低粘度和到达温度
  最低粘度   ACF   NCF-1   NCF-2
  粘度   1.1×104Pa·s   1.1×104Pa·s   1.2×102Pa·s
  到达温度   101℃   101℃   101℃
从上述表1和表2可以发现,无论是否有无导电性粒子15,导电性粒子15以外的组分相同的ACF及NCF-1的最低粘度和到达温度相同。另一方面,NCF-2的到达粘度虽然与ACF和NCF-1相同,但最低粘度却小。
由于NCF-2的,作为热固化性树脂的环氧树脂与固化剂的配合比、作为热塑性树脂的苯氧树脂的种类和配合比、以及无机填充料的配合比,与ACF和NCF-1不同,因此可确定通过改变热固化性树脂、固化剂、热塑性树脂和无机填充料等的粘合剂成分的种类或配合量而能够改变最低粘度。
<粘合薄膜的制造>以下表3所示的组合,对膜厚4μm的ACF、膜厚14μm的NCF-1与NCF-2进行粘合,制造了实施例1、实施例2、对比例1和对比例2的粘合薄膜。
表3:粘合薄膜的构成
Figure G2008800212794D00111
以膜厚18μm的ACF作为对比例1的粘合薄膜。并且,将ACF中的导电性粒子的密度从每1mm2为8000个改成3000个之外,用实施例1同样的构成制造了实施例2的粘合薄膜。
<组装工序>作为被粘合物准备了IC芯片(评价用IC,材质:硅,尺寸:6.0mm×6.0mm,厚度:0.4mm,突起:金球凸点,突起厚度:20μm,突起面积:60μm×60μm,突起间空间20μm,节距:80μm)和ITO镀膜玻璃(评价用ITO玻璃,Corning公司制,品名:1737F,玻璃尺寸:纵50mm×横30mm×厚0.5mm,ITO垫(Pad)尺寸:60μm×60μm,节距:80μm)。
首先,在ITO镀膜玻璃上,向被切成7.0mm×7.0mm的实施例1、实施例2、对比例1和对比例2的粘合薄膜,隔着缓冲材料(膜厚70μm的Teflon(注册商标))施加压接机(工具尺寸8.0mm×8.0mm),在80℃、1Mpa、2秒钟的临时压接条件下进行临时粘贴。
接着,对IC芯片进行校正,在ITO镀膜玻璃上临时固定之后,使用与临时粘贴时相同的压接机,隔着缓冲材料(膜厚70μm的Teflon(注册商标))施加到IC芯片上,在190℃、3Mpa、10秒钟的主压接条件下,进行热挤压,将IC芯片连接到ITO镀膜玻璃上,从而获得了实施例1、实施例2、对比例1和对比例2的接合体。其中,由于突起以及ITO垫的表面大小为60μm×60μm,因此连接突起以及ITO垫的连接面积为3600μm2
对这四种接合体,进行了下列「粒子捕捉数」、「捕捉效率」,「导通电阻」和「短路发生率」的检测。
[粒子捕捉数]主压接后,对20个突起的残留在各突起下的导电性粒子进行了计数。
[捕捉效率]捕捉效率是以百分比表示主压接后捕捉到了多少个粒子的值。具体为,临时固定IC芯片后,对20个突起的在各突起下存在的导电性粒子数(平均)进行计数,再将导电性粒子数以及主压接后的粒子捕捉数(平均)导入下式(1)而求出的。
捕捉效率(%)=(主压接后的粒子捕捉数)/(IC芯片临时固定后在IC芯片突起下存在的粒子数)×100......式(1)
[导通电阻]在主压接后,求出了IC芯片的突起和ITO垫之间的导通电阻(单位:Ω)。「粒子捕捉数」的最大值、最小值、平均,「捕捉效率」和「导通电阻」的测定结果如表4所示。
表4:粒子捕捉数、捕捉效率、导通电阻(连接面积=3600μm2,测定数N=20)
从上述表4可看出,实施例1和2的捕捉效率高于对比例1和2。实施例2中,虽然其导电性粒子密度仅为实施例1、对比例1以及对比例2的一半,但其粒子捕捉数和导通电阻却与对比例1和对比例2同程度。
从以上可知,若将第一粘合剂层的最低粘度控制成高于第二粘合剂层的最低粘度,且将第一粘合剂层的膜厚缩小至不足电性粒子粒径的2倍,则即使不提高导电性粒子的密度也能获取较高的导通可靠性。
[短路发生率]使用实施例1、实施例2、对比例1和对比例2的粘合薄膜,连接上述IC芯片及ITO镀膜玻璃时,除了进行将突起及ITO垫在水平方向上分离10μm的误校正以外,在同于上述「组装工序」的条件下制造了接合体。在邻接的ITO垫间施加30V的电压,测量了绝缘电阻,且将绝缘电阻小于等于1.0×10-6Ω的情况设为短路,对短路发生数进行了计数(初期)。
将接合体在导电状态下,85℃、湿度85%的环境下放置500小时之后,对短路发生数进行了计数(高温高湿放置)。在200处对短路发生数进行了计数,求初期和高温高湿放置后的短路发生率(%)。结果如表5所示。
表5:短路发生率(测定数N=400)
可从上述表5看出,实施例1和2较之对比例1和2,其初期和高温高湿后的短路发生率少,导电性粒子从对峙的端子间移动到邻接端子间的量少。
在上述内容中,将成形为薄膜状的第一粘合剂层11和第二粘合剂层12相互粘合,制造了粘合薄膜10,但本发明并不局限于此。例如,将第二粘合剂层12的材料溶解或分散到溶剂中制成涂液,在第一粘合剂层11表面上涂布该涂液之后,进行干燥就能使第二粘合剂层12粘附配置于第一粘合剂层11的表面上。
并且,还可以将第一粘合剂层11的材料和导电性粒子15溶解或分散于溶剂中制成涂液,在第二粘合剂层12表面涂布该涂液后,进行干燥,就能在第二粘合剂层12表面粘附配置第一接粘合剂层11。第一粘合剂层11和第二粘合剂层12并不仅限于在同一个剥离薄膜19的表面和背面上紧贴,可分别紧贴于别的剥离薄膜19上。
还可以不对粘合剂进行薄膜化,将分散有导电性粒子15的膏状粘合剂直接涂布到基板3上形成第一粘合剂层11之后,在第一粘合剂层11表面紧贴配置第二粘合剂层12。
还可以向电子部件4涂布膏状的粘合剂形成第二粘合剂层12之后,在第二粘合剂层12的表面紧贴配置第一粘合剂层11。

Claims (5)

1.一种粘合薄膜,包括:第一粘合剂层和粘附于所述第一粘合剂层的第二粘合剂层,并且,所述第一粘合剂层在开始固化的固化开始温度以下温度的最低粘度,高于所述第二粘合剂层在开始固化的固化开始温度以下温度的最低粘度,
将所述第一粘合剂层和所述第二粘合剂层分别朝向基板和电子部件一侧,热挤压所述基板和所述电子部件,对所述电子部件和所述基板进行连接,其特征在于,
所述第一粘合剂层中分散有导电性粒子,
所述第一粘合剂层的膜厚度小于所述导电性粒子平均粒径的2倍。
2.如权利要求1所述的粘合薄膜,第二粘合剂层最低粘度为,含有导电性粒子状态下的第一粘合剂层最低粘度的0.05倍以上、0.2倍以下。
3.如权利要求1至2中的任意一项所述的粘合薄膜,第一粘合剂层变成最低粘度的温度和第二粘合剂层变成最低粘度的温度的差为10℃以下。
4.一种连接方法,其特征在于,隔着权利要求1至3中的任意一项所述粘合薄膜对峙基板端子和电子部件端子,通过热挤压所述基板和所述电子部件,将所述粘合薄膜中的导电性粒子夹持于所述基板端子与所述电子部件端子之间,从而连接所述基板和所述电子部件。
5.一种接合体,其特征在于,具备使用权利要求4所述的连接方法进行连接的基板和电子部件。
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KR20100021530A (ko) 2010-02-24
JP5311772B2 (ja) 2013-10-09
JP2009007443A (ja) 2009-01-15
KR101193735B1 (ko) 2012-10-22
CN101755022B (zh) 2014-04-30
US8796557B2 (en) 2014-08-05
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TWI386475B (zh) 2013-02-21
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