TWI385718B - Plasma doping method - Google Patents
Plasma doping method Download PDFInfo
- Publication number
- TWI385718B TWI385718B TW095116831A TW95116831A TWI385718B TW I385718 B TWI385718 B TW I385718B TW 095116831 A TW095116831 A TW 095116831A TW 95116831 A TW95116831 A TW 95116831A TW I385718 B TWI385718 B TW I385718B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- impurity
- plasma doping
- gas
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 120
- 239000012535 impurity Substances 0.000 claims description 175
- 239000007789 gas Substances 0.000 claims description 142
- 239000000758 substrate Substances 0.000 claims description 98
- 229910052796 boron Inorganic materials 0.000 claims description 63
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000009826 distribution Methods 0.000 claims description 14
- 239000012528 membrane Substances 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 6
- 239000007943 implant Substances 0.000 claims description 6
- 238000011068 loading method Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 175
- 239000000523 sample Substances 0.000 description 50
- 230000015572 biosynthetic process Effects 0.000 description 41
- 150000002500 ions Chemical class 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 28
- 238000011282 treatment Methods 0.000 description 25
- 238000012423 maintenance Methods 0.000 description 24
- 230000008859 change Effects 0.000 description 22
- 229910052707 ruthenium Inorganic materials 0.000 description 19
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 17
- 238000012545 processing Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 239000007787 solid Substances 0.000 description 11
- 238000002513 implantation Methods 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- -1 Boron ions Chemical class 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000003826 tablet Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005140405 | 2005-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200707552A TW200707552A (en) | 2007-02-16 |
| TWI385718B true TWI385718B (zh) | 2013-02-11 |
Family
ID=37396640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095116831A TWI385718B (zh) | 2005-05-12 | 2006-05-12 | Plasma doping method |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US20070111548A1 (de) |
| EP (1) | EP1881523B1 (de) |
| JP (1) | JP4979580B2 (de) |
| KR (1) | KR101177867B1 (de) |
| CN (1) | CN101160643B (de) |
| TW (1) | TWI385718B (de) |
| WO (1) | WO2006121131A1 (de) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100739837B1 (ko) * | 2003-02-19 | 2007-07-13 | 마쯔시다덴기산교 가부시키가이샤 | 불순물 도입 방법 및 불순물 도입 장치 |
| WO2005036626A1 (ja) * | 2003-10-09 | 2005-04-21 | Matsushita Electric Industrial Co., Ltd. | 接合の形成方法およびこれを用いて形成された被処理物 |
| JPWO2005119745A1 (ja) * | 2004-06-04 | 2008-04-03 | 松下電器産業株式会社 | 不純物導入方法 |
| JP4143684B2 (ja) * | 2006-10-03 | 2008-09-03 | 松下電器産業株式会社 | プラズマドーピング方法及び装置 |
| JPWO2008050596A1 (ja) * | 2006-10-25 | 2010-02-25 | パナソニック株式会社 | プラズマドーピング方法及びプラズマドーピング装置 |
| WO2008059827A1 (fr) * | 2006-11-15 | 2008-05-22 | Panasonic Corporation | Procédé de dopage de plasma |
| US7754503B2 (en) | 2007-01-22 | 2010-07-13 | Panasonic Corporation | Method for producing semiconductor device and semiconductor producing apparatus |
| US7820533B2 (en) * | 2007-02-16 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Multi-step plasma doping with improved dose control |
| TW200849344A (en) * | 2007-03-23 | 2008-12-16 | Matsushita Electric Ind Co Ltd | Apparatus and method for plasma doping |
| JP2008300687A (ja) * | 2007-05-31 | 2008-12-11 | Tokyo Electron Ltd | プラズマドーピング方法及びその装置 |
| US8004045B2 (en) | 2007-07-27 | 2011-08-23 | Panasonic Corporation | Semiconductor device and method for producing the same |
| JP5329865B2 (ja) * | 2008-07-31 | 2013-10-30 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US7776727B2 (en) * | 2007-08-31 | 2010-08-17 | Applied Materials, Inc. | Methods of emitter formation in solar cells |
| WO2009084160A1 (ja) * | 2007-12-28 | 2009-07-09 | Panasonic Corporation | プラズマドーピング装置及び方法並びに半導体装置の製造方法 |
| US8030187B2 (en) | 2007-12-28 | 2011-10-04 | Panasonic Corporation | Method for manufacturing semiconductor device |
| US20100304527A1 (en) * | 2009-03-03 | 2010-12-02 | Peter Borden | Methods of thermal processing a solar cell |
| JP5263266B2 (ja) | 2010-11-09 | 2013-08-14 | パナソニック株式会社 | プラズマドーピング方法及び装置 |
| US8501605B2 (en) * | 2011-03-14 | 2013-08-06 | Applied Materials, Inc. | Methods and apparatus for conformal doping |
| GB201202128D0 (en) * | 2012-02-08 | 2012-03-21 | Univ Leeds | Novel material |
| US9093335B2 (en) | 2012-11-29 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Calculating carrier concentrations in semiconductor Fins using probed resistance |
| US9224644B2 (en) | 2012-12-26 | 2015-12-29 | Intermolecular, Inc. | Method to control depth profiles of dopants using a remote plasma source |
| KR102276432B1 (ko) | 2014-04-07 | 2021-07-09 | 삼성전자주식회사 | 색분리 소자 및 상기 색분리 소자를 포함하는 이미지 센서 |
| CN105097437A (zh) * | 2014-05-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 形成应变硅层的方法、pmos器件的制作方法及半导体器件 |
| TWI594301B (zh) * | 2014-08-25 | 2017-08-01 | 漢辰科技股份有限公司 | 離子佈植方法與離子佈植機 |
| DE102015204637A1 (de) * | 2015-03-13 | 2016-09-15 | Infineon Technologies Ag | Verfahren zum Dotieren eines aktiven Hall-Effekt-Gebiets einer Hall-Effekt-Vorrichtung und Hall-Effekt-Vorrichtung mit einem dotierten aktiven Hall-Effekt-Gebiet |
| JP6496210B2 (ja) * | 2015-08-12 | 2019-04-03 | 日本電子株式会社 | 荷電粒子線装置 |
| US10460941B2 (en) * | 2016-11-08 | 2019-10-29 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping using a solid dopant source |
| CN114744286A (zh) * | 2022-03-30 | 2022-07-12 | 广东马车动力科技有限公司 | 一种离子掺杂固态电解质膜及其制备方法与应用 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW429434B (en) * | 1999-05-14 | 2001-04-11 | Canon Sales Co Inc | Plasma doping system and plasma doping method |
| TW479296B (en) * | 2001-03-06 | 2002-03-11 | Macronix Int Co Ltd | Method to prevent ion punch-through using plasma doping process |
| TW567542B (en) * | 2001-10-26 | 2003-12-21 | Varian Semiconductor Equipment | Methods and apparatus for plasma doping by anode pulsing |
| TW200416842A (en) * | 2002-10-02 | 2004-09-01 | Matsushita Electric Ind Co Ltd | Plasma doping method and plasma doping apparatus |
| TW200507269A (en) * | 2003-06-02 | 2005-02-16 | Sumitomo Heavy Industries | Manufacturing method of semiconductor device |
| TW200514117A (en) * | 2003-08-25 | 2005-04-16 | Matsushita Electric Ind Co Ltd | Forming method of impurity-inducted layer, the cleaning method of the treated subject, and the manufacture method of the impurity-inducted device as well as equipment |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4912065A (en) * | 1987-05-28 | 1990-03-27 | Matsushita Electric Industrial Co., Ltd. | Plasma doping method |
| KR930003857B1 (ko) * | 1987-08-05 | 1993-05-14 | 마쯔시다덴기산교 가부시기가이샤 | 플라즈마 도우핑방법 |
| JP3431647B2 (ja) * | 1992-10-30 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体装置とその作製方法およびメモリ装置の作製方法およびレーザードーピング処理方法 |
| US5330800A (en) * | 1992-11-04 | 1994-07-19 | Hughes Aircraft Company | High impedance plasma ion implantation method and apparatus |
| JPH06330727A (ja) | 1993-05-20 | 1994-11-29 | Toyota Autom Loom Works Ltd | 排気ガス浄化装置 |
| US6165876A (en) * | 1995-01-30 | 2000-12-26 | Yamazaki; Shunpei | Method of doping crystalline silicon film |
| JPH08293279A (ja) * | 1995-04-20 | 1996-11-05 | Fuji Xerox Co Ltd | 非質量分離型イオン注入装置 |
| JP3340318B2 (ja) | 1995-08-10 | 2002-11-05 | 松下電器産業株式会社 | 不純物導入装置及び不純物導入方法 |
| US5851906A (en) * | 1995-08-10 | 1998-12-22 | Matsushita Electric Industrial Co., Ltd. | Impurity doping method |
| KR970013011A (ko) * | 1995-08-10 | 1997-03-29 | 모리시다 요이치 | 불순물 · 도입장치 및 불순물 도입방법 |
| US6784080B2 (en) * | 1995-10-23 | 2004-08-31 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing semiconductor device by sputter doping |
| US5962858A (en) * | 1997-07-10 | 1999-10-05 | Eaton Corporation | Method of implanting low doses of ions into a substrate |
| JPH11154482A (ja) * | 1997-11-19 | 1999-06-08 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| US6135128A (en) | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
| JP3088721B1 (ja) * | 1999-08-11 | 2000-09-18 | キヤノン販売株式会社 | 不純物処理装置及び不純物処理装置のクリーニング方法 |
| EP2426693A3 (de) * | 1999-12-13 | 2013-01-16 | Semequip, Inc. | Ionenquelle |
| US7303982B2 (en) * | 2000-08-11 | 2007-12-04 | Applied Materials, Inc. | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage |
| TWI312645B (en) * | 2002-07-11 | 2009-07-21 | Panasonic Corporatio | Method and apparatus for plasma doping |
| JP4013674B2 (ja) * | 2002-07-11 | 2007-11-28 | 松下電器産業株式会社 | プラズマドーピング方法及び装置 |
| JP4544447B2 (ja) | 2002-11-29 | 2010-09-15 | パナソニック株式会社 | プラズマドーピング方法 |
| JP4374487B2 (ja) * | 2003-06-06 | 2009-12-02 | 株式会社Ｓｅｎ | イオン源装置およびそのクリーニング最適化方法 |
| JP2005005328A (ja) | 2003-06-09 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 不純物導入方法、不純物導入装置およびこれを用いて形成された半導体装置 |
| JP4411581B2 (ja) * | 2003-06-13 | 2010-02-10 | 株式会社Ｓｅｎ | イオン源装置及びそのための電子エネルギー最適化方法 |
| JP4303662B2 (ja) | 2003-09-08 | 2009-07-29 | パナソニック株式会社 | プラズマ処理方法 |
| KR101076516B1 (ko) * | 2003-09-08 | 2011-10-24 | 파나소닉 주식회사 | 플라즈마 처리방법 및 장치 |
| US8058156B2 (en) * | 2004-07-20 | 2011-11-15 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having multiple ion shower grids |
| US7326937B2 (en) * | 2005-03-09 | 2008-02-05 | Verian Semiconductor Equipment Associates, Inc. | Plasma ion implantation systems and methods using solid source of dopant material |
| US7879701B2 (en) * | 2005-06-30 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8642135B2 (en) * | 2005-09-01 | 2014-02-04 | Micron Technology, Inc. | Systems and methods for plasma doping microfeature workpieces |
-
2006
- 2006-05-11 CN CN2006800125087A patent/CN101160643B/zh not_active Expired - Fee Related
- 2006-05-11 KR KR1020077023413A patent/KR101177867B1/ko not_active IP Right Cessation
- 2006-05-11 EP EP06746306A patent/EP1881523B1/de not_active Expired - Fee Related
- 2006-05-11 JP JP2007528323A patent/JP4979580B2/ja not_active Expired - Fee Related
- 2006-05-11 WO PCT/JP2006/309509 patent/WO2006121131A1/ja active Application Filing
- 2006-05-12 TW TW095116831A patent/TWI385718B/zh not_active IP Right Cessation
- 2006-12-29 US US11/647,235 patent/US20070111548A1/en not_active Abandoned
-
2007
- 2007-03-30 US US11/730,244 patent/US20070176124A1/en not_active Abandoned
- 2007-05-15 US US11/748,607 patent/US7358511B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW429434B (en) * | 1999-05-14 | 2001-04-11 | Canon Sales Co Inc | Plasma doping system and plasma doping method |
| TW479296B (en) * | 2001-03-06 | 2002-03-11 | Macronix Int Co Ltd | Method to prevent ion punch-through using plasma doping process |
| TW567542B (en) * | 2001-10-26 | 2003-12-21 | Varian Semiconductor Equipment | Methods and apparatus for plasma doping by anode pulsing |
| TW200416842A (en) * | 2002-10-02 | 2004-09-01 | Matsushita Electric Ind Co Ltd | Plasma doping method and plasma doping apparatus |
| TW200507269A (en) * | 2003-06-02 | 2005-02-16 | Sumitomo Heavy Industries | Manufacturing method of semiconductor device |
| TW200514117A (en) * | 2003-08-25 | 2005-04-16 | Matsushita Electric Ind Co Ltd | Forming method of impurity-inducted layer, the cleaning method of the treated subject, and the manufacture method of the impurity-inducted device as well as equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101177867B1 (ko) | 2012-08-28 |
| CN101160643A (zh) | 2008-04-09 |
| WO2006121131A1 (ja) | 2006-11-16 |
| US20070111548A1 (en) | 2007-05-17 |
| EP1881523A1 (de) | 2008-01-23 |
| EP1881523B1 (de) | 2013-01-02 |
| US20070176124A1 (en) | 2007-08-02 |
| EP1881523A4 (de) | 2010-05-26 |
| JPWO2006121131A1 (ja) | 2008-12-18 |
| TW200707552A (en) | 2007-02-16 |
| JP4979580B2 (ja) | 2012-07-18 |
| US20080067439A1 (en) | 2008-03-20 |
| US7358511B2 (en) | 2008-04-15 |
| KR20080007436A (ko) | 2008-01-21 |
| CN101160643B (zh) | 2012-04-18 |
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