KR970013011A - 불순물 · 도입장치 및 불순물 도입방법 - Google Patents

불순물 · 도입장치 및 불순물 도입방법 Download PDF

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KR970013011A
KR970013011A KR1019960030948A KR19960030948A KR970013011A KR 970013011 A KR970013011 A KR 970013011A KR 1019960030948 A KR1019960030948 A KR 1019960030948A KR 19960030948 A KR19960030948 A KR 19960030948A KR 970013011 A KR970013011 A KR 970013011A
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chamber
target
gas
plasma
sample
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히로아키 나사오카
분지 미즈노
미치히코 다카세
이치로 나카야마
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모리시다 요이치
마쯔시다 덴키 산교 가부시키가이샤
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Abstract

진공챔버의 하부에는 불순물의 피도입체인 실리콘기판을 유지하는 시료대가 설치되어 있다. 시료대에는 커플링 콘덴서를 통하여 고주파전원이 접속되어 있고, 이 고주파전원의 자기 바이어스는, 예를 들면 500V이다. 진공챔버의 저부에는 아르곤가스 등의 스퍼터링가스를 도입하기 위한 가스도입수단이 설치되어 있다. 진공챔버(10)의 상부에는 도입되는 불순물, 예를들면 붕소를 함유하는 고체형상의 타게트가 배치되어 있다.

Description

불순물 도입장치 및 불순물 도입방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 제1실시예에 관한 불순물 도입장치의 단면도

Claims (13)

  1. 내부가 진공상태로 유지되는 진공챔버와, 상기 진공챔버 내에 설치되어 있고 상기 시료를 유지하는 시료대와, 상기 챔버 내에 설치되어 있고 상기 불순물을 포함하는 고체형상의 타게트와, 상기 챔버 내에 스퍼터링용 가스를 도입하는 가스도입수단과, 상기 챔버 내에 도입된 상기 가스를 여기하여 이 가스에 이루어지는 플라즈마를 발생시킴으로써, 플라즈마상태의 가스를 상기 타게트에 충돌시켜서 이 타게트에 포함되는 불순물을 스퍼터링시키는 플라즈마 발생수단과, 상기 플라즈마 발생수단에 의하여 발생한 플라즈마와 상기 시료대 사이에 자기 바이어스를 형성함으로써, 상기 타게트로부터 스퍼터링된 불순물을 상기 시료대에 유지된 시료의 표면부에 도입하는 고주파전원을 구비하고 있는 것을 특징으로 하는 불순물 도입장치.
  2. 제1항에 있어서, 상기 플라즈마 발생수단은 상기 진공챔버의 외부에 설치되고, 상기 진공챔버 내에 1GHz 이상의 주파수를 가지는 플라즈마 발생파를 도입하는 수단인 것을 특징으로 하는 불순물 도입장치.
  3. 제2항에 있어서, 상기 진공챔버 내에 발생한 플라즈마의 밀도를 높이는 자계를 발생시키는 자계발생수단을 더 구비하고 있는 것을 특징으로 하는 불순물 도입장치.
  4. 제1항에 있어서, 상기 타게트는 상기 불순물로서 붕소 및 질소를 포함하고 있는 것을 특징으로 하는 불순물 도입장치.
  5. 제1항에 있어서, 상기 타게트는 붕소 나이트라이드를 포함하고 있는 것을 특징으로 하는 불순물 도입장치.
  6. 제1항에 있어서, 상기 가스도입수단에 의하여 도입되는 상기 가스는 아르곤가스 및 질소가스를 포함하고 있는 것을 특징으로 하는 불순물 도입장치.
  7. 내부가 진공상태로 유지되는 제1진공챔버와, 상기 제1진공챔버 내에 설치되어 있고 상기 시료를 유지하는 제1시료대와, 상기 제1챔버 내에 설치되어 있고 상기 제1불순물을 포함하는 고체형상의 제1타게트와, 상기 제1챔버 내에 스퍼터링용 가스를 도입하는 제1가스도입수단과, 상기 제1챔버 내에 도입된 상기 가스를 여기하여 이 가스로 이루어지는 플라즈마를 발생시킴으로써, 플라즈마 상태의 가스를 상기 제1타게트에 충돌시켜서 이 제1타게트에 포함되는 제1불순물을 스퍼터링시키는 제1플라즈마 발생수단과, 상기 제1플라즈마 발생수단에 의하여 발생한 플라즈마와 상기 제1시료대 사이에 자기 바이어스를 형성함으로써, 상기 제1타게트로부터 스퍼터링된 상기 제1불순물을 상기 제1시료대에 유지된 시료에 도입하는 제1고주파 전원과, 내부가 진공상태로 유지되는 제2진공챔버와, 상기 제2진공챔버 내에 설치되어 있고 상기 시료를 유지하는 제2시료대와, 상기 제2챔버내에 설치되어 있고 상기 제2불순물을 포함하는 고체형상의 제2타게트와, 상기 제2챔버 내에 스퍼터링용 가스를 도입하는 제2가스도입수단과, 상기 제2챔버 내에 도입된 상기 가스를 여기하여 이 가스로 이루어지는 플라즈마를 발생시킴으로써, 이 플라즈마상태의 가스를 상기 제2타게트에 충돌시켜서 이 제2타게트에 포함하는 제2불순물을 스퍼터링시키는 제2플라즈마 발생수단과, 상기 제2플라즈마 발생수단에 의하여 발생한 플라즈마와 상기 제2시료대 사이에 자기 바이어스를 형성함으로써, 상기 제2타게트로부터 스퍼터링된 제2불순물을 상기 제2시료대에 유지된 시료에 도입하는 제2고주파전원과, 내부가 진공상태로 유지되고, 상기 제1진공챔버 및 제2진공챔버의 각각과 셔터를 통하여 연통하고 있고, 상기 시료를 상기 제1시료대 상에서 상기 제2시료대상으로 반송하는 반송수단을 가지는 반송실을 구비하고 있는 것을 특징으로 하는 불순물 도입장치.
  8. 내부가 진공상태로 유지된 진공챔버 내에 설치된 시료대에 상기 시료를 유지시킴과 동시에, 상기 진공챔버 내에 상기 불순물을 포함하는 고체형상의 타게트를 유지하는 유지공정과, 상기 챔버 내에 스퍼터링용 가스를 도입하는 가스도입공정과, 상기 가스도입공정에서 도입된 상기 가스로 이루어지는 플라즈마를 발생시킴으로써 플라즈마상태의 가스를 상기 타게트에 충돌시켜서 이 타게트에 포함되는 불순물을 스퍼터링시키는 플라즈마 발생공정과, 상기 시료대에 고주파전력을 인가하여 상기 플라즈마 발생공정에서 발생한 플라즈마와 상기 시료대 사이에 자기 바이어스를 형성함으로써, 상기 타게트로부터 스퍼터링된 불순물을 상기 시료대에 유지된 시료에 도입하는 불순물 도입공정을 구비하고 있는 것을 특징으로 하는 불순물 도입방법.
  9. 제8항에 있어서, 상기 플라즈마 발생공정은, 상기 진공챔버 내에 1GHz 이상의 주파수를 가지는 플라즈마 발생파를 돌입하여 상기 가스로 이루어지는 플라즈마를 발생시키는 공정을 포함하는 것을 특징으로 하는 불순물 도입방법.
  10. 제9항에 있어서, 상기 플라즈마 발생공정은, 상기 진공챔버 내에 발생한 플라즈마의 밀도를 자계에 의하여 높이는 공정을 포함하는 것을 특징으로 하는 불순물 도입방법.
  11. 제8항에 있어서, 상기 타게트에 포함되는 불순물은 붕소 및 질소인 것을 특징으로 하는 불순물 도입방법.
  12. 제8항에 있어서, 상기 타게트는 붕소 나이트라이드를 포함하는 것을 특징으로 하는 불순물 도입방법.
  13. 제8항에 있어서, 상기 가스도입공정에서 도입되는 상기 가스는 아르곤가스 및 질소가스를 포함하는 것을 특징으로 하는 불순물 도입방법.
KR1019960030948A 1995-08-10 1996-07-29 불순물 · 도입장치 및 불순물 도입방법 KR970013011A (ko)

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US20050208218A1 (en) * 1999-08-21 2005-09-22 Ibadex Llc. Method for depositing boron-rich coatings
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