TWI381552B - 發光二極體以及其製造方法 - Google Patents

發光二極體以及其製造方法 Download PDF

Info

Publication number
TWI381552B
TWI381552B TW097129539A TW97129539A TWI381552B TW I381552 B TWI381552 B TW I381552B TW 097129539 A TW097129539 A TW 097129539A TW 97129539 A TW97129539 A TW 97129539A TW I381552 B TWI381552 B TW I381552B
Authority
TW
Taiwan
Prior art keywords
electrode
semiconductor layer
emitting diode
light
type semiconductor
Prior art date
Application number
TW097129539A
Other languages
English (en)
Chinese (zh)
Other versions
TW200935626A (en
Inventor
尹餘鎮
Original Assignee
首爾Ｏｐｔｏ儀器股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 首爾Ｏｐｔｏ儀器股份有限公司 filed Critical 首爾Ｏｐｔｏ儀器股份有限公司
Publication of TW200935626A publication Critical patent/TW200935626A/zh
Application granted granted Critical
Publication of TWI381552B publication Critical patent/TWI381552B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/1701—Structure
    • H01L2224/1703—Bump connectors having different sizes, e.g. different diameters, heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW097129539A 2008-02-01 2008-08-04 發光二極體以及其製造方法 TWI381552B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080010784A KR101457204B1 (ko) 2008-02-01 2008-02-01 발광 다이오드 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200935626A TW200935626A (en) 2009-08-16
TWI381552B true TWI381552B (zh) 2013-01-01

Family

ID=40930793

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097129539A TWI381552B (zh) 2008-02-01 2008-08-04 發光二極體以及其製造方法

Country Status (4)

Country Link
US (1) US8049229B2 (enExample)
JP (1) JP5575378B2 (enExample)
KR (1) KR101457204B1 (enExample)
TW (1) TWI381552B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8441018B2 (en) * 2007-08-16 2013-05-14 The Trustees Of Columbia University In The City Of New York Direct bandgap substrates and methods of making and using
KR101497953B1 (ko) * 2008-10-01 2015-03-05 삼성전자 주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드
JP5281612B2 (ja) * 2010-05-26 2013-09-04 株式会社東芝 半導体発光装置及びその製造方法
KR101139915B1 (ko) * 2010-06-08 2012-04-30 부경대학교 산학협력단 내정전성 발광소자 및 그 제조방법
TWI515923B (zh) * 2011-08-30 2016-01-01 晶元光電股份有限公司 發光元件
TWI578565B (zh) * 2013-09-17 2017-04-11 隆達電子股份有限公司 發光二極體
KR102188993B1 (ko) 2013-11-15 2020-12-10 삼성디스플레이 주식회사 광원 유닛 및 이를 포함하는 백라이트 어셈블리
JP7161096B2 (ja) * 2018-06-29 2022-10-26 日亜化学工業株式会社 半導体素子の製造方法
CN114914334A (zh) * 2021-02-07 2022-08-16 京东方科技集团股份有限公司 发光芯片以及发光基板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010024460A1 (en) * 1997-02-21 2001-09-27 Masahiro Yamamoto Semiconductor light-emitting device
US20060157718A1 (en) * 2005-01-19 2006-07-20 Samsung Electro-Mechanics Co., Ltd. Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
US20060220057A1 (en) * 2005-03-30 2006-10-05 Samsung Electro-Mechanics Co., Ltd. Group III-nitride light emitting device
US20070145391A1 (en) * 2005-12-26 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Vertical type nitride semiconductor light emitting device and method of manufacturing the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236827A (ja) * 1985-08-10 1987-02-17 Nippon Gakki Seizo Kk 選択エツチング方法
JPH0766280A (ja) * 1993-08-30 1995-03-10 Toshiba Corp 半導体装置の製造方法
JPH09331110A (ja) * 1996-06-12 1997-12-22 Mitsubishi Electric Corp 光半導体装置、および光半導体装置の製造方法
TW365071B (en) * 1996-09-09 1999-07-21 Toshiba Corp Semiconductor light emitting diode and method for manufacturing the same
JP3752339B2 (ja) * 1997-02-04 2006-03-08 ローム株式会社 半導体発光素子
JP2002043633A (ja) * 2000-07-25 2002-02-08 Stanley Electric Co Ltd 白色発光ダイオ−ド
JP2002261326A (ja) * 2001-03-02 2002-09-13 Nagoya Kogyo Univ 窒化ガリウム系化合物半導体素子の製造方法
JP4123830B2 (ja) * 2002-05-28 2008-07-23 松下電工株式会社 Ｌｅｄチップ
WO2004013916A1 (ja) * 2002-08-01 2004-02-12 Nichia Corporation 半導体発光素子及びその製造方法並びにそれを用いた発光装置
JP3818297B2 (ja) * 2003-05-27 2006-09-06 松下電工株式会社 半導体発光素子
JP2005045162A (ja) * 2003-07-25 2005-02-17 Mitsubishi Electric Corp 半導体素子およびその製造方法
TWI244748B (en) * 2004-10-08 2005-12-01 Epistar Corp A light-emitting device with a protecting structure
JP5008263B2 (ja) * 2005-03-02 2012-08-22 日亜化学工業株式会社 半導体発光素子
JP5138873B2 (ja) * 2005-05-19 2013-02-06 日亜化学工業株式会社 窒化物半導体素子
JP4819453B2 (ja) * 2005-09-12 2011-11-24 昭和電工株式会社 窒化ガリウム系半導体発光素子およびその製造方法
JP4777757B2 (ja) * 2005-12-01 2011-09-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP4994656B2 (ja) * 2005-12-20 2012-08-08 三洋電機株式会社 光半導体素子の製造方法
JP4901241B2 (ja) * 2006-02-27 2012-03-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
JP4353232B2 (ja) * 2006-10-24 2009-10-28 ソニー株式会社 発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010024460A1 (en) * 1997-02-21 2001-09-27 Masahiro Yamamoto Semiconductor light-emitting device
US20060157718A1 (en) * 2005-01-19 2006-07-20 Samsung Electro-Mechanics Co., Ltd. Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same
US20060220057A1 (en) * 2005-03-30 2006-10-05 Samsung Electro-Mechanics Co., Ltd. Group III-nitride light emitting device
US20070145391A1 (en) * 2005-12-26 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Vertical type nitride semiconductor light emitting device and method of manufacturing the same

Also Published As

Publication number Publication date
JP5575378B2 (ja) 2014-08-20
US8049229B2 (en) 2011-11-01
KR20090084540A (ko) 2009-08-05
US20090194779A1 (en) 2009-08-06
JP2009188370A (ja) 2009-08-20
KR101457204B1 (ko) 2014-11-03
TW200935626A (en) 2009-08-16

Similar Documents

Publication Publication Date Title
TWI381552B (zh) 發光二極體以及其製造方法
US8242509B2 (en) Light emitting device
KR100872717B1 (ko) 발광 소자 및 그 제조방법
US5369289A (en) Gallium nitride-based compound semiconductor light-emitting device and method for making the same
CN108963051B (zh) 发光二极管封装件
US11489087B2 (en) Light emitting device
US8680560B2 (en) LED and LED package
US20100133567A1 (en) Semiconductor light emitting device and method of manufacturing the same
US12183848B2 (en) Light emitting device
CN102347415A (zh) 半导体发光器件及其制造方法
KR101114592B1 (ko) 발광 디바이스 패키지 및 그 제조방법
KR101544974B1 (ko) 발광 다이오드 및 그 제조방법
KR101525913B1 (ko) 수직구조 발광다이오드 및 이의 제조방법
CN111052409A (zh) 发光二极管装置及制造发光二极管装置的方法
KR100969128B1 (ko) 발광 소자 및 그 제조방법
US20100230703A1 (en) Light emitting device fabrication method thereof, and light emitting apparatus
KR102181404B1 (ko) 발광소자 및 조명시스템
CN115394887B (zh) 发光元件及其制作方法
KR20110116453A (ko) 반도체 발광소자 및 발광소자 패키지
TW202527799A (zh) 微型led結構和微型顯示面板
KR102299735B1 (ko) 발광소자 및 조명시스템
JP2003078168A (ja) 窒化物半導体発光素子
KR102181398B1 (ko) 발광소자 및 조명시스템
KR20110082865A (ko) 반도체 발광 소자 및 그 제조 방법
KR20100030971A (ko) 발광 다이오드 및 그 제조방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees