TWI377649B - Semiconductor decice having nitridated oxide layer and method therefor - Google Patents
Semiconductor decice having nitridated oxide layer and method therefor Download PDFInfo
- Publication number
- TWI377649B TWI377649B TW095100397A TW95100397A TWI377649B TW I377649 B TWI377649 B TW I377649B TW 095100397 A TW095100397 A TW 095100397A TW 95100397 A TW95100397 A TW 95100397A TW I377649 B TWI377649 B TW I377649B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating layer
- layer
- semiconductor device
- environment
- forming
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 238000000034 method Methods 0.000 title claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 238000005121 nitriding Methods 0.000 claims description 17
- 239000002159 nanocrystal Substances 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 3
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000004945 emulsification Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 description 20
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 241000255925 Diptera Species 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
- H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/943—Information storage or retrieval using nanostructure
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/043,827 US7338894B2 (en) | 2005-01-26 | 2005-01-26 | Semiconductor device having nitridated oxide layer and method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200636931A TW200636931A (en) | 2006-10-16 |
| TWI377649B true TWI377649B (en) | 2012-11-21 |
Family
ID=36697413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095100397A TWI377649B (en) | 2005-01-26 | 2006-01-04 | Semiconductor decice having nitridated oxide layer and method therefor |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7338894B2 (https=) |
| JP (1) | JP5354907B2 (https=) |
| CN (1) | CN100541740C (https=) |
| TW (1) | TWI377649B (https=) |
| WO (1) | WO2006081005A2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7361567B2 (en) * | 2005-01-26 | 2008-04-22 | Freescale Semiconductor, Inc. | Non-volatile nanocrystal memory and method therefor |
| KR100683854B1 (ko) * | 2005-09-06 | 2007-02-15 | 삼성전자주식회사 | 비휘발성 기억 소자의 형성 방법 |
| US7705385B2 (en) * | 2005-09-12 | 2010-04-27 | International Business Machines Corporation | Selective deposition of germanium spacers on nitride |
| US20090061608A1 (en) * | 2007-08-29 | 2009-03-05 | Merchant Tushar P | Method of forming a semiconductor device having a silicon dioxide layer |
| KR101876473B1 (ko) | 2009-11-06 | 2018-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940006094B1 (ko) * | 1989-08-17 | 1994-07-06 | 삼성전자 주식회사 | 불휘발성 반도체 기억장치 및 그 제조방법 |
| TW587252B (en) * | 2000-01-18 | 2004-05-11 | Hitachi Ltd | Semiconductor memory device and data processing device |
| US6320784B1 (en) * | 2000-03-14 | 2001-11-20 | Motorola, Inc. | Memory cell and method for programming thereof |
| US6297095B1 (en) * | 2000-06-16 | 2001-10-02 | Motorola, Inc. | Memory device that includes passivated nanoclusters and method for manufacture |
| US6413819B1 (en) * | 2000-06-16 | 2002-07-02 | Motorola, Inc. | Memory device and method for using prefabricated isolated storage elements |
| US6444545B1 (en) * | 2000-12-19 | 2002-09-03 | Motorola, Inc. | Device structure for storing charge and method therefore |
| JP3580781B2 (ja) * | 2001-03-28 | 2004-10-27 | 株式会社東芝 | 半導体記憶素子 |
| US6713127B2 (en) * | 2001-12-28 | 2004-03-30 | Applied Materials, Inc. | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
| US6657894B2 (en) * | 2002-03-29 | 2003-12-02 | Macronix International Co., Ltd, | Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cells |
| JP3776889B2 (ja) * | 2003-02-07 | 2006-05-17 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US7033956B1 (en) * | 2004-11-01 | 2006-04-25 | Promos Technologies, Inc. | Semiconductor memory devices and methods for making the same |
| US20060110883A1 (en) * | 2004-11-23 | 2006-05-25 | Intel Corporation | Method for forming a memory device |
| US7361567B2 (en) * | 2005-01-26 | 2008-04-22 | Freescale Semiconductor, Inc. | Non-volatile nanocrystal memory and method therefor |
-
2005
- 2005-01-26 US US11/043,827 patent/US7338894B2/en not_active Expired - Fee Related
- 2005-12-16 CN CNB2005800412072A patent/CN100541740C/zh not_active Expired - Fee Related
- 2005-12-16 JP JP2007552132A patent/JP5354907B2/ja not_active Expired - Fee Related
- 2005-12-16 WO PCT/US2005/045731 patent/WO2006081005A2/en not_active Ceased
-
2006
- 2006-01-04 TW TW095100397A patent/TWI377649B/zh not_active IP Right Cessation
-
2007
- 2007-12-12 US US11/955,009 patent/US7781831B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7781831B2 (en) | 2010-08-24 |
| CN101124667A (zh) | 2008-02-13 |
| US20060166493A1 (en) | 2006-07-27 |
| WO2006081005A3 (en) | 2007-07-19 |
| CN100541740C (zh) | 2009-09-16 |
| US7338894B2 (en) | 2008-03-04 |
| JP2008529275A (ja) | 2008-07-31 |
| JP5354907B2 (ja) | 2013-11-27 |
| TW200636931A (en) | 2006-10-16 |
| WO2006081005A2 (en) | 2006-08-03 |
| US20080087954A1 (en) | 2008-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |