CN100541740C - 具有氮化氧化物层的半导体器件及其形成方法 - Google Patents

具有氮化氧化物层的半导体器件及其形成方法 Download PDF

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Publication number
CN100541740C
CN100541740C CNB2005800412072A CN200580041207A CN100541740C CN 100541740 C CN100541740 C CN 100541740C CN B2005800412072 A CNB2005800412072 A CN B2005800412072A CN 200580041207 A CN200580041207 A CN 200580041207A CN 100541740 C CN100541740 C CN 100541740C
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China
Prior art keywords
insulating barrier
semiconductor device
nitrogenize
layer
environment
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Expired - Fee Related
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CNB2005800412072A
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English (en)
Chinese (zh)
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CN101124667A (zh
Inventor
林相佑
罗伯特·F·施泰梅尔
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN101124667A publication Critical patent/CN101124667A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
CNB2005800412072A 2005-01-26 2005-12-16 具有氮化氧化物层的半导体器件及其形成方法 Expired - Fee Related CN100541740C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/043,827 US7338894B2 (en) 2005-01-26 2005-01-26 Semiconductor device having nitridated oxide layer and method therefor
US11/043,827 2005-01-26

Publications (2)

Publication Number Publication Date
CN101124667A CN101124667A (zh) 2008-02-13
CN100541740C true CN100541740C (zh) 2009-09-16

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CNB2005800412072A Expired - Fee Related CN100541740C (zh) 2005-01-26 2005-12-16 具有氮化氧化物层的半导体器件及其形成方法

Country Status (5)

Country Link
US (2) US7338894B2 (https=)
JP (1) JP5354907B2 (https=)
CN (1) CN100541740C (https=)
TW (1) TWI377649B (https=)
WO (1) WO2006081005A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361567B2 (en) * 2005-01-26 2008-04-22 Freescale Semiconductor, Inc. Non-volatile nanocrystal memory and method therefor
KR100683854B1 (ko) * 2005-09-06 2007-02-15 삼성전자주식회사 비휘발성 기억 소자의 형성 방법
US7705385B2 (en) * 2005-09-12 2010-04-27 International Business Machines Corporation Selective deposition of germanium spacers on nitride
US20090061608A1 (en) * 2007-08-29 2009-03-05 Merchant Tushar P Method of forming a semiconductor device having a silicon dioxide layer
KR101876473B1 (ko) 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073513A (en) * 1989-08-17 1991-12-17 Samsung Electronics Co., Ltd. Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate
CN1449054A (zh) * 2002-03-29 2003-10-15 旺宏电子股份有限公司 对虚拟接地非易失内存阵列编程而不干扰相邻单元的设备及方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW587252B (en) * 2000-01-18 2004-05-11 Hitachi Ltd Semiconductor memory device and data processing device
US6320784B1 (en) * 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
US6297095B1 (en) * 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture
US6413819B1 (en) * 2000-06-16 2002-07-02 Motorola, Inc. Memory device and method for using prefabricated isolated storage elements
US6444545B1 (en) * 2000-12-19 2002-09-03 Motorola, Inc. Device structure for storing charge and method therefore
JP3580781B2 (ja) * 2001-03-28 2004-10-27 株式会社東芝 半導体記憶素子
US6713127B2 (en) * 2001-12-28 2004-03-30 Applied Materials, Inc. Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
JP3776889B2 (ja) * 2003-02-07 2006-05-17 株式会社東芝 半導体装置およびその製造方法
US7033956B1 (en) * 2004-11-01 2006-04-25 Promos Technologies, Inc. Semiconductor memory devices and methods for making the same
US20060110883A1 (en) * 2004-11-23 2006-05-25 Intel Corporation Method for forming a memory device
US7361567B2 (en) * 2005-01-26 2008-04-22 Freescale Semiconductor, Inc. Non-volatile nanocrystal memory and method therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073513A (en) * 1989-08-17 1991-12-17 Samsung Electronics Co., Ltd. Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate
CN1449054A (zh) * 2002-03-29 2003-10-15 旺宏电子股份有限公司 对虚拟接地非易失内存阵列编程而不干扰相邻单元的设备及方法

Also Published As

Publication number Publication date
US7781831B2 (en) 2010-08-24
CN101124667A (zh) 2008-02-13
US20060166493A1 (en) 2006-07-27
WO2006081005A3 (en) 2007-07-19
TWI377649B (en) 2012-11-21
US7338894B2 (en) 2008-03-04
JP2008529275A (ja) 2008-07-31
JP5354907B2 (ja) 2013-11-27
TW200636931A (en) 2006-10-16
WO2006081005A2 (en) 2006-08-03
US20080087954A1 (en) 2008-04-17

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