TWI374446B - Method for operating non-volatile storage and non-volatile storage system - Google Patents

Method for operating non-volatile storage and non-volatile storage system Download PDF

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Publication number
TWI374446B
TWI374446B TW097105962A TW97105962A TWI374446B TW I374446 B TWI374446 B TW I374446B TW 097105962 A TW097105962 A TW 097105962A TW 97105962 A TW97105962 A TW 97105962A TW I374446 B TWI374446 B TW I374446B
Authority
TW
Taiwan
Prior art keywords
volatile storage
stylized
storage elements
pulses
pulse
Prior art date
Application number
TW097105962A
Other languages
English (en)
Chinese (zh)
Other versions
TW200849247A (en
Inventor
Nima Mokhlesi
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/694,992 external-priority patent/US7619930B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200849247A publication Critical patent/TW200849247A/zh
Application granted granted Critical
Publication of TWI374446B publication Critical patent/TWI374446B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
TW097105962A 2007-02-20 2008-02-20 Method for operating non-volatile storage and non-volatile storage system TWI374446B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US89083207P 2007-02-20 2007-02-20
US69499307A 2007-03-31 2007-03-31
US11/694,992 US7619930B2 (en) 2007-02-20 2007-03-31 Dynamic verify based on threshold voltage distribution

Publications (2)

Publication Number Publication Date
TW200849247A TW200849247A (en) 2008-12-16
TWI374446B true TWI374446B (en) 2012-10-11

Family

ID=39433720

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097105962A TWI374446B (en) 2007-02-20 2008-02-20 Method for operating non-volatile storage and non-volatile storage system

Country Status (6)

Country Link
EP (3) EP2348511B1 (enExample)
JP (2) JP5113195B2 (enExample)
KR (2) KR101163162B1 (enExample)
CN (2) CN102005244B (enExample)
TW (1) TWI374446B (enExample)
WO (1) WO2008103586A1 (enExample)

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TWI604449B (zh) * 2016-08-31 2017-11-01 旺宏電子股份有限公司 記憶體裝置與其程式化方法

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US9009547B2 (en) 2011-01-27 2015-04-14 Apple Inc. Advanced programming verification schemes for analog memory cells
JP5598363B2 (ja) * 2011-02-15 2014-10-01 ソニー株式会社 記憶装置およびその動作方法
US8811075B2 (en) 2012-01-06 2014-08-19 Sandisk Technologies Inc. Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
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WO2013112332A1 (en) 2012-01-24 2013-08-01 Apple Inc. Enhanced programming and erasure schemes for analog memory cells
US8681569B2 (en) * 2012-02-22 2014-03-25 Silicon Motion, Inc. Method for reading data stored in a flash memory according to a threshold voltage distribution and memory controller and system thereof
KR101938659B1 (ko) 2012-02-29 2019-01-15 삼성전자주식회사 불 휘발성 메모리 장치 및 그것을 포함한 메모리 시스템
CN108595345B (zh) * 2012-07-25 2021-11-23 慧荣科技股份有限公司 管理闪存中所储存的数据的方法及相关记忆装置与控制器
JP2014053060A (ja) 2012-09-07 2014-03-20 Toshiba Corp 半導体記憶装置及びその制御方法
JP2014059930A (ja) * 2012-09-18 2014-04-03 Toshiba Corp 不揮発性半導体記憶装置
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US9455029B2 (en) * 2014-05-23 2016-09-27 Micron Technology, Inc. Threshold voltage analysis
US9595317B2 (en) * 2015-05-28 2017-03-14 Sandisk Technologies Llc Multi-state programming for non-volatile memory
US10607693B2 (en) * 2018-06-29 2020-03-31 Micron Technology, Inc. Misplacement mitigation algorithm
US11270771B2 (en) * 2019-01-29 2022-03-08 Silicon Storage Technology, Inc. Neural network classifier using array of stacked gate non-volatile memory cells
JP2022520372A (ja) * 2019-10-29 2022-03-30 長江存儲科技有限責任公司 メモリデバイスのプログラミング方法、およびメモリデバイス

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI604449B (zh) * 2016-08-31 2017-11-01 旺宏電子股份有限公司 記憶體裝置與其程式化方法

Also Published As

Publication number Publication date
KR20100024913A (ko) 2010-03-08
TW200849247A (en) 2008-12-16
EP2122627B1 (en) 2013-01-30
CN101689400A (zh) 2010-03-31
KR101163162B1 (ko) 2012-07-06
CN101689400B (zh) 2013-07-03
EP2348511A1 (en) 2011-07-27
JP5113195B2 (ja) 2013-01-09
KR101147522B1 (ko) 2012-05-21
CN102005244A (zh) 2011-04-06
EP2122627A1 (en) 2009-11-25
JP5410390B2 (ja) 2014-02-05
JP2011008913A (ja) 2011-01-13
CN102005244B (zh) 2015-10-21
JP2010519673A (ja) 2010-06-03
EP2458592A3 (en) 2012-08-15
EP2458592B1 (en) 2014-03-26
WO2008103586A1 (en) 2008-08-28
KR20100101694A (ko) 2010-09-17
EP2348511B1 (en) 2014-08-13
EP2458592A2 (en) 2012-05-30

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