TWI373503B - Dicing die bonding film - Google Patents
Dicing die bonding film Download PDFInfo
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- TWI373503B TWI373503B TW094110164A TW94110164A TWI373503B TW I373503 B TWI373503 B TW I373503B TW 094110164 A TW094110164 A TW 094110164A TW 94110164 A TW94110164 A TW 94110164A TW I373503 B TWI373503 B TW I373503B
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Description
1373503 九、發明說明: 【發明所屬之技術領域】 本發明關於多層黏合膜,係包含熱塑性橡膠與熱固性 樹脂之組合,尤其適用於作為半導體封裝體内之切割模毒占 合膜β 【先前技術】
一種結合半導體晶片於基板之方法係使用位於模與基 板之間之薄膜形式的模結合黏合劑。黏合劑膜係於鋸成個 別晶片或模之前施於半導體矽晶圓。為了於切割程序期間 保護及支持矽晶圓,黏合劑膜係與稱為切割膠布之膠布接 觸。用於此結構之黏合劑膜稱為,,切割模黏合膜,,。因此, 晶圓、黏合劑膜及切割膠布組件係於切割晶圓之前建構。 於第一建構方法中,藉首先將黏合膜施於晶圓且接著 將切割膠布施於黏合膜,可進行黏合膜及切割膠布對晶圓 之施用。於第二建構方法中,首先將黏合膜施於切割膠布, 並且接著將薄膜和膠布的組合施於晶圓。 於切割晶圓後 -目切割膠布去除已結合黏合劑之布 模’並且將其放置於基板上,以供進—步製造處理。氣 發生模加上黏合狀移除,黏合劑對 ^圓更高的黏附性。目前市售㈣割_合膜係= 組為了自切割膠布獲得具有已結合黏合齊 ' ,;έ合劑對矽模的黏附性與黏合劑 的黏附性之間必麵當。、賴切_ 於自環境溫度至50°c及7η υ L 及 7〇,〇〇〇 至 700,000 Pa 壓力之 5 1373503 應力之緣故,高於W模黏合膜層壓於半導體晶圓。因熱 常需要獲得對石夕之適=層壓溫度(以目前市售的材料,通 亦可造成勒合劑太附性)造成明顯的晶圓形變。高溫 供接續製造步_,造^合於切_布’因而當拉起以 於5(TC之溫度時,自石夕模扯掉。然而,當使用低 而造成縣财料,因 法,問題的方 放之層壓溫度下’該多層膜提供明顯:二 附性及對切割膠布軸附性。千之_日日圓的黏 【發明内容】 發明概述 本發明係為一種切割槪赴人 石々曰HI盥切到去拄賺太 站σ膜,適用於配置於半導體 石夕晶圓與:割支持膠布之間’ 黏合劑,係能㈣jiL持膠布接㈣含⑻層1 與該半導财晶圓接觸,其巾Α λ _ 2黏合劑’係 於層1對該切娜布之黏附性之黏附性高 施例中,層i黏合劑具有對==牛頓/公一^ 在0.05至小於0.5牛頓/公分布之特徵剝離強度係 對石夕晶圓之特徵剝離強度係為〇 ’且層2黏,劑具有 個點附數值之間有至少G.1牛頓公分或更南(假設二 定做對於在切賴黏合程序中遇^ 77之差異)。多層膜使得 能。 材料之黏附性成為可
月6 G 1373503 適合的切割膠布係為聚烯烴及聚(乙烯基氯)薄膜,例 如以商標Adwill® G-64市售自Lintec Corporation者,或以 商標Elepholder V-8-T售自Nitto Denko者。其他適合的切 割膠布係由聚酯或聚酸亞胺組成者。此等膠布係於市面上 出售,且係為適用於黏合劑之UV輻射活化作用或適用於 壓敏性活化作用之形式。於使用UV膠布之此等例子中, 於UV照射之後,黏合劑對UV膠布之所需的特徵剝離強 度將於0.05至小於0.5牛頓/公分之範圍内。 g發明詳述 層1可為任一種具有對切割膠布之特徵剝離強度係於 0.05至小於0.5牛頓/公分範圍内,且可層壓於層2之黏合 劑。層2可為任一種具有對矽晶圓之特徵剝離強度係為〇 5 牛頓/公分或更高,且可層壓於層1之黏合劑。於某些情形 下,超出以上範圍是可能的(假設通常有至少〇丨牛頓/公分 差異之剝離強度)。 雖然可使用任一種符合以上剝離強度及層壓規範之黏 鲁合劑,用於層1及層2二者之一種適合的配方將含有(3)熱 塑性橡膠、(b)熱固性樹脂、(c)硬化劑、(d)加速劑及(e)填 料,其中用於層1之熱固性樹脂具有軟化點大於6(rc,用 於層2之熱固性樹脂具有軟化點低於6〇°c。於本說明書 中’材料的軟化點係定義為其熔點(Tm)或玻璃轉變溫度 (Tg)。用於本實施例之一般重量百分率為3〇_85重量%熱塑 性橡膠、15-70重量。/〇熱固性樹脂、0.05-40重量%硬化劑、 0.0M0重量%加速劑及1-80重量%填料。 於層1之另一實施例中’熱固性樹脂係為具有軟化點 7 1373503 大於60°c及每環氧基當量之重量(WPE)為100至1000之固 體環氧樹脂。適合的固體環氧化物包含雙紛A、雙酚F、 紛系紛路樹脂或甲酚系酚醛樹脂(市售自Shell Chemicals 及 Dainippon Ink and Chemicals,Inc.)。 於層2之另一實施例中,熱固性樹脂係為環氧樹脂, 例如雙酚A環氧樹脂、雙酚1?環氧樹脂、酚系酚醛環氧樹 脂或甲酚系酚醛環氧樹脂,且具有每環氧基當量之重量 (WPE)為100至1〇〇〇及軟化點低於60^»此等環氧化物係 市售自 Shell Chemicals 及 Dainippon Ink and Chemicals,
Inc.。 於層2之另一實施例中,可使用熱固性樹脂之組合, 且於此情形下’至少20%之總熱固性樹脂應具有低於60°c 之軟化點。除了環氧化物之組合外,其他適用於層2之熱 固性樹脂包含馬來酿亞胺、丙稀酸醋、乙稀基醚及每分子 中具有至少一個雙鍵之聚(丁二烯)。 適合的馬來醯亞胺樹脂包含具有以下通稱結構者
其中η為1至3’且X1為脂族或芳族基團。例示的X1本體 包含聚(丁二烯)、聚(碳酸酯)、聚(胺基甲酸酯)、聚(醚)、 聚(酯)、純烴及含有諸如羰基、羧基、醯胺、胺基曱酸酯、 尿素或醚等官能之純烴。此等類型之樹脂係於市面上有 售,且可得自例如 National Starch and Chemical Company 8 1373503 及 Dainippon Ink and Chemicals, Inc.。於一實施例中,馬來 醯亞胺樹脂係選自由以下化合物組成之群
〇-(〇36)*'
其中c36代表36個碳原子之線型或分支鏈(具有或不具環狀 部分);
適合的丙烯酸酯樹脂包含具有以下通稱結構者
其中η為1至6,R1為-H或-CH3,且X2為芳族或脂族基 團。例示的X2本體包含聚(丁二烯)、聚(碳酸酯)、聚(胺基 曱酸酯)、聚(醚)、聚(酯)、純烴及含有諸如羰基、羧基、 醯胺、胺基曱酸酯、尿素或醚等官能之純烴。市售的材料 9 1373503 包含(曱基)丙烯酸丁酯、(曱基)丙烯酸異丁酯、(甲基)丙婦 酸2-乙基己酯、(甲基)丙烯酸異癸酯、(曱基)丙烯酸正月桂 醋、(曱基)丙烯酸烷酯、(甲基)丙烯酸十三烷酯、(甲基)丙 烯酸正硬脂基酯、(甲基)丙婦酸環己酯、(甲基)丙婦酸四氫 糠酯、(甲基)丙烯酸2-笨氧基乙酯、(甲基)丙烯酸異葙酯、 丁烧二醇二(曱基)丙烯酸酯、1,6-己燒二醇二(甲基)丙烯 酸酯、1,9_壬烷二醇二(甲基)丙烯酸酯、(曱基)丙烯酸全氟 辛基乙酯、1,10-癸烧二醇二(曱基)丙歸酸酯、壬基紛聚丙 |氧基化(甲基)丙烯酸酯及聚戊氧基化四氫糠基丙烯酸酯(市 售自 Kyoeisha Chemical Co.,LTD);聚丁二婦胺基曱酸酯二 甲基丙烯酸酯(CN302、NTX6513)及聚丁二烯二甲基丙烯酸 醋(CN301、NTX6039、PR06270)(市售自 Sartomer Company, Inc.);聚碳酸酯胺基曱酸酯二丙烯酸酯(ArtResin UN9200A)(市售自 Negami Chemical Industries Co·,LTD); 丙烯酸化脂族胺基曱酸酯寡聚物(Ebecryl 230、264、265、 270、284、4830、4833、4834、4835、4866、488卜 4883、 8402、8800-20R、8803、8804)(市售自 Radcure Specialities, ® Inc.);聚酯丙烯酸酯寡聚物(Ebecryl 657、770、810、830、 1657、1810、1830)(市售自 Radcure Specialities,Inc.);及 環氧基丙烯酸酯樹脂(CN104、111、112、115、116、117、 118、119、120、124、136)(市售自 Sartomer Company,Inc.)。 於一實施例中,丙烯酸酯樹脂係選自由丙烯酸異葙酯、曱 基丙烯酸異葙酯、丙烯酸月桂酯、曱基丙烯酸月桂酯、具 有丙烯酸酯官能度之聚(丁二烯)以及具有甲基丙烯酸酯官 能度之聚(丁二烯)。 10 1373503 適合的乙烯基醚樹脂包含具有以下通稱結構者
其中η為1至6,且X3為芳族或脂族基團。例示的χ3本體 包含聚(丁二烯)、聚(碳酸酯)、聚(胺基甲酸酯)、聚(鍵)、 鲁聚(S旨)、純煙及含有諸如幾基、竣基、醯胺、胺基曱酸酉旨、 尿素或瞇等官能之純烴。市售的樹脂包含環己烷二甲醇二 乙烯基醚、十二基乙烯基醚、環己基乙烯基醚、2_乙基己 基乙晞基醚、一縮二丙二醇二.乙稀基醚、己烧二醇二乙烯 基醚、十八烷基乙烯基醚及丁烷二醇二乙烯基醚(市售自 International Speciality Products (ISP)) ; Vectomer 4010 ' 4020、4030、4040、405 卜 4210、4220、4230、4060、5015(市 售自 Sigma-Aldrich,Inc.)。 ® 適合的聚(丁二烯)樹脂包含聚(丁二烯)、環氧化聚(丁 二烯)、馬來系聚(丁二烯)、丙蝉酸化聚(丁二烯)、丁二烯-苯乙烯共聚物及丁二烯-丙烯腈共聚物。市售的材料包含均 聚合物 丁二烯(Ricon 130、13卜 134、142、150、152、153、 154、156、157、P30D)(市售自 Sartomer Company, Inc.); 丁二烯與苯乙烯之無規聚合物(Ricon 100、181、184)(市售 自 Sartomer Company,Inc.);馬來酿亞胺化聚(丁二烯)(Ricon 130MA8、130MA13、130MA20、131MA5、131MA10、 1373503 131厘人17、131^1入20、156]^八17)(市售自8&1*1:〇11161*0〇111卩311丫,
Inc.);丙烯酸化聚(丁二稀)(CN302、NTX6513、CN301、 NTX6039、PRO6270、Ricacryl 3100、Ricacryl 3500)(市售 自 Sartomer Company, Inc.);環氧基化聚(丁二稀)(P〇lybd 600、605)(市售自 Sartomer Company, Inc.)及 Epolead PB3600(市售自 Daicel Chemical Industries,Ltd);及丙烯腈 和丁二烯共聚物(Hycar CTBN系列、ATBN系列、VTBN系 列及ETBN系列)(市售自Hanse Chemical)。 | 就層1或層2而言,熱塑性橡膠將以30-85重量%之含 量存在;適合的熱塑性橡膠包含羧基封端之丁二烯-腈 (CTBN)/環氧基加合物及腈丁二烯橡膠(NBR)。CTBN環氧 基加合物係包含約20-80 重量%CTBN及約20-80重量%二 縮水甘油基醚雙酚A :雙酚A環氧樹脂(DGEBA)。CTBN 將具有分子量在約100至1000範圍内,且DGEBA將具有 當量(或每一環氧基重量之克/環氧基)係於約500至5000之範 圍内。最終加合物將具有當量為約500至5000克/環氧基
及熔體黏度(於150°C)為5000至100,000 cp。許多CTBN ®材料係得自Noveon Inc.,且許多雙龄A環氧基材料係得自
Dainippon Ink and Chemicals,Inc.及 Shell Chemicals。NBR 係由20-50重量%範圍内之丙稀腈及50-80重量%範圍内之 丁二烯所組成,並且具有玻璃轉變溫度(Tg)為-40至+2〇。〇 及分子量(Mw)為100,000至1,000,000。此類型之NBR橡 勝係市售自 Zeon Corporation。 層1或層2的硬化劑將以0.5至40重量%之含量存在; 適合的硬化劑包含酚系樹脂、芳族二胺、二氰基二醯胺及 12 1373503 聚醯胺。適合的酚系樹脂具有OH數值為90至110及軟化 點為 60 至 litre,且市售自 Schenectady international,Inc·。 適合的芳族二胺為一級二胺,且包含二胺基二苯基砜及二 胺基二笨基甲烷(市售自Sigma-Aldrich Co.)。適合的二氰基 二醯胺係市售自SKW Chemicals,Inc·。適合的聚醯胺係市 售自 Air Products and Chemicals, Inc.。 層1或層2的加速劑將以0.01至10重量%之含量存 在;適合的加速劑包含咪β坐或三級胺。適合的咪嗤係市售 •自 Air Products and Chemicals,Inc.。適合的三、級胺係市隹 自 Sigma-Aldrich Co.。 層1或層2的填料將具有粒度為〇.丨至1〇微米,且將 以1至80重量%之含量存在。視最終應用性而定,填料可 為電或熱導性或非導性。適合的導性填料的實例包含銀、 銅、金、鈀、鉑、鎳、鋁及碳黑。非導性填料包 氫氧化鋁、二氧化矽、蛭石、雲母、矽礦石、碳酸鈣\二 氧化鈦、砂、玻璃、硫酸鋇及“的乙稀聚合物(例如四氣 •乙稀、,氟乙烯、亞乙婦基氟、乙婦基氟、亞乙稀基氯及 亦可添加其他添加劑,例如黏附促進劑,其類 量係於技藝中已知。 〃 3 此膜結構將於供切割模黏合膜用之商業上可接受的 範圍内完成’其係具有對切割膠布之特徵_強度ς在 ==°·5牛頓/公分之範圍内,及對晶圓之特徵剝 離強度係為0.5牛頓/公分或更高。於25至5〇它溫产 70,000至7〇G,_ PaM力之商業上可接受的條件下^膜 13 !3735〇3 可層壓於半導體晶圓。 【實施方式】 實施例 於以下實施例中’製備4個切割模黏合膜,並且於黏 附於石夕晶圓之後比較其效能。實施例1及2係為本發明之 二層膜’且實施例3及4為比較的單層膜。實施例5揭示 效能結果及測試方法。
實施例1.薄膜A 藉混合以下成分(以重量份pbw計)於充足的曱基乙基 酮中’以製造糊漿,俾製備層1(供黏附於切割膠布用): 60pbw 環氧基改質的 CTBN (Μη: 15015,丁叾:-17。(:); 29 pbw甲酚酚醛環氧樹脂(環氧基當量:22〇,軟化 點:90°C); 7 pbw 3,3’-二胺基二苯基砜; 1 pbw 2-笨基4-曱基咪唑; 3 pbw二氧化矽填料(平均尺寸:〇 5微米)。 將此糊毁塗覆於50微米厚釋放塗覆聚酯膜,並且於 9〇°C下乾燥5分鐘,俾製造薄膜a,層1(1〇微米厚)。 藉混合以下成分(以重量份pbw計)於充足的甲基乙基 _中’以製造婦’俾製備層2(供黏附於⑦晶圓用): 60 pbw 環氧基改質的 CTBN (Μη: 15015,Tg: -17。〇 ; 3〇pbw雙齡F環氧樹脂(環氧基當量:29〇,軟化點: 1373503 4°C ’ 於 50°C下之黏度為 35,000 mPaS); 6pbw3,3’-二胺基二苯基砜; 1 pbw 2-笨基4-曱基咪唑; 3 pbw二氧化矽填料(平均尺寸:0.5微米)。
將此糊漿塗覆於50微米厚釋放塗覆聚酯膜,並 9〇。(:下乾燥5分鐘,俾製造薄膜A,層2(15微米厚)。且於 以80 C及0.21 MPa之滾筒層壓機使兩層彼此層壓 且將層壓膜切割為具有220毫米直徑之圓。將層1之並 襯墊剝除’並且於室溫及0.21 MPa之壓力下,將切割敌 (Adwill® G-64,市售自 Lintec Conwation)層壓於層 i 膠布 面上。 9之表
實施例2.薄膜B 藉混合以下成分(以重量份pbW計)於充足的甲茂 酮中,以製造糊漿,俾製備層1(供黏附於切割膠布用)基 60pbw 環氧基改質的 CTBN(Mn: 15〇15,Tg:17t>c); 29 pbw甲酚酚醛環氧樹脂(環氧基當量:mo,軟化 點:90°C); 7 pbw 3,3’-二胺基二苯基砜; 1 pbw 2-笨基4·甲基咪吨; 3 pbw二氧化矽填料(平均尺寸:〇 5微米)。 將此糊漿塗覆於50微米厚釋放塗覆聚酯膜,並且於 9〇°C下乾燥5分鐘,俾製造層丨(13微米厚)。 藉混合以下成分(以重量份pbw計)於充足的甲基乙基 15 1373503 酮中,以製造糊漿,俾製備層2(供黏附於矽晶圓用): 25 pbw羧酸酯化丙烯腈丁二烯共聚物橡膠(Nlw : 350,000 ’ 丙烯腈含量:27 重量%,Tg : ·2〇(^); 15 pbw乙烯基封端的丁二烯_腈橡膠(丙烯腈含量: 21.5 % » Tg : -45°〇 ; 20 Pbw4,4’·雙馬來醯亞胺基-二苯基-曱燒; 25 pbw三環癸烷-二曱醇與3_異丙烯基·二甲基苄基異 氣酸S旨加合物; 5 pbw二異丙苯基過氧化物; ® lOpbw二氧化矽填料(平均尺寸:〇 5微米)。 將此糊漿塗覆於50微米厚釋放塗覆聚酯膜,並且於 9〇°C下乾燥5分鐘,俾製造層2(12微米厚)。 以80°C及0.21 MPa之滚筒層壓機使兩層彼此層壓,並 且將層壓膜切割為具有220毫米直徑之圓。將層1之釋放 襯墊剝除,並且於室溫及0.21 MPa之壓力下,將切割膠布 (Adwill® G-64)層壓於層1之表面上。
馨比較例3.薄膜C 藉混合以下成分(以重量份pbw計)於充足的曱基乙基 酮中,以製造糊漿,俾製備薄膜C: 60pbw 環氧基改質的 cTBN(Mn: 15015,Tg:-17°C); 29 pbw甲酚酚醛環氧樹脂(環氧基當量:220,軟化 點:90°〇; 7 pbw 3,3’-二胺基二苯基颯; 1 pbw2-笨基4_甲基咪唑; 16 1373503 3 pbw二氧化矽填料(平均尺寸:0.5微米)。 將此糊漿塗覆於50微米厚釋放塗覆聚酯膜,並且於 90°C下乾燥5分鐘,俾製造薄膜C(25微米厚)。將膜之釋 放襯墊剝除,並且於室溫及0.21 MPa之壓力下,將切割膠 布(Adwill® G-64)層壓於其表面上。
比較例4.薄膜D 藉混合以下成分(以重量份pbw計)於充足的曱基乙基 酮中,以製造糊漿,俾製備薄膜D : 25 pbw羧酸酯化丙烯腈丁二烯共聚物橡膠(Mw : 350,000,丙烯腈含量:27 重量%,Tg : -20°C); 15 pbw乙烯基封端的丁二烯-腈橡膠(丙烯腈含量: 21.5 %,Tg : -45〇C); 20 pbw 4,4’-雙馬來醯亞胺基-二苯基-甲烷; 25pbw三環癸烷-二曱醇與3-異丙烯基-二曱基苄基異 氰酸酯加合物; 5 pbw二異丙苯基過氧化物; 10 pbw二氧化矽填料(平均尺寸:0.5微米)。 將此糊漿塗覆於50微米厚釋放塗覆聚酯膜,並且於 90°C下乾燥5分鐘,俾製造薄膜D(25微米厚)。將膜之釋 放襯墊剝除,並且於室溫及0.21 MPa之壓力下,將切割膠 布(Adwill® G-64)層壓於其表面上。 17 1373503 實施例5.效能及測試方法 於不同溫度下,將薄臈aiD及 布(薄膜H)之每-者層墨於石夕晶圓,以二照射,並 90。剝離強度。此測試結果係顯示於表丨中。 N斌 公分) 層壓溫度 (°C)
結果顯示多層膜A與B _ 取得效能,其中與切膠"7者提供適用於良好切割及模 。/係介於0.05和小於〇.5牛頓/ 503 A刀之間’且與矽晶圓係介於0.5和10牛頓/公分之間(於 所有測贫的層壓溫度下)之可接受的剝離強度。比較薄膜c ίϋ所有層壓溫度下具有於對切割膠布之可接受範圍内之 剝離強许.a, 〈 <,然而,其對於矽晶圓之黏附性於低於5〇。〇商業 上可接戈需求之層壓溫度下是無法接受的。比較簿二 於:有層壓溫度下具有於對矽晶 圓之可接受範圍内之剝^ $,然而,其對於切割膠布之黏附性在所有測試條件下 太咼。比較的市售薄膜Η對切割膠布具有良好黏附性,但 ;低,5〇 c之溫度下,對石夕晶圓之黏附性是不適當的。 藉首先自切割膠布及自欲測試的薄膜去除釋放襯墊, 用於對切割膠布進行剝離強度測試之試樣。 =.2lMPa壓力下’使兩薄膜層壓-起,並且切割為10 毫米寬條狀物。自薄膜之剩餘的露出面移除釋放襯墊,接 著於適當❹m溫度下將層壓結構(加上切_布之薄 =壓1破璃載片(其中切割膠布係位於頂部,且薄膜靠著玻 璃)。手動地開始剝離。 —2首先自欲«的薄膜去除釋放襯墊且於欲測試之規 =度獨其層壓”晶圓,製備驗財晶圓進行剝離 強度測试之錢。接著於室溫及G21鹽壓力下將一種 對模結合膜具有剝離強度超過2G牛頓/公分之壓敏性黏合 劑(PSA)施於薄膜。接著切割薄臈加上pSA 1〇毫米寬之切 片(同時連接於晶圓),並且手動地開始樣品之剝離。 於90度下以5〇毫求/分鐘,於室溫下,使用加心 SV-52N剝離測試機測試剝離強度。合計及平均結果。
Claims (1)
137350 專利申請案第94丨丨0丨64號 ROC Patent Appln. No. 94110164 修正後無劃線之中文申議專利範圍替換本-附m二) -—^-^Amended Claims in Chinese - Enel, ΠΠ 备告本 \民國10丨年5月4日送呈) (Submitted on May 4,2012) 十、申請專 l.種切。J杈黏合膜,道用於配^於半1 導體⑦日日日圓與切割 支持膠布之間’該切割模黏合膜包含: ⑷層合劑,係與該㈣支持膠布接觸,及 ⑻層2點合劑,係與該半導體珍晶圓接觸, 其中該層1點合劑與層2黏合劑皆為 ^嶋、15_7。重量%熱固性樹脂、〇二 兑^”^夕重量%加速劑及1別重量%填料所構成; 黏:;至之黏附性高於層1對該切割膠布之 軟化點古;^。牛頓/公分,該層1中的熱固性樹脂具有 且該層2中的熱固性樹脂具有軟化點 2. 如申請專利範圍第!項之切龍黏合膜,其中該声 合劑具有對該切割膠布之特徵剝離強度係在〇仍0至^ 牛頓/公分之範圍内,且該層2黏合劑具有對該半 導體矽晶圓之特徵剝離強度係為0.5牛頓/公分戋更高。 3. 如申請專利範圍第丨項之切割模黏合臈其中層1中之 ^ 該熱固性樹脂係為具有軟化點大於6〇ΐ及每^氧基當 量之重量為1〇〇至1〇〇〇之固體環氧樹脂。 田 4. 如申請專利範圍第1項之切割模黏合臈其中層2中之 該熱固性樹脂係為具有軟化點低於6 01及每^氧基當 量之重量為1〇〇至1〇〇〇之環氧樹脂。 田 5. 如申請專利範圍第1項之切割模黏合膜,其中層2中之 該熱固性樹脂係為熱固性樹脂與至少2〇〇/0具有軟化點 低於60°C之總層2熱固性樹脂的混合物。 1373503. 6. 如申請專利範圍第1項之切割模黏合膜,其中該熱塑性 橡膠係為羧基封端之丁二烯-腈/環氧基加合物及腈丁二 烯橡膠。 7. 如申請專利範圍第6項之切割模黏合膜,其中該羧基封 端之丁二烯-腈/環氧基加合物係包含約20-80重量%羧 基封端之丁二烯-腈及約20-80重量%二縮水甘油基醚雙 酚A :雙酚A環氧樹脂。 a H:\JillK\94〇67-申請專利範圍(2〇丨2.05)接.docx 2
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JP4283596B2 (ja) * | 2003-05-29 | 2009-06-24 | 日東電工株式会社 | チップ状ワークの固定方法 |
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JP4443962B2 (ja) * | 2004-03-17 | 2010-03-31 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
US20070003758A1 (en) * | 2004-04-01 | 2007-01-04 | National Starch And Chemical Investment Holding Corporation | Dicing die bonding film |
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US20090311520A1 (en) * | 2005-12-15 | 2009-12-17 | Hwail Jin | Multi-layer adhesive film for die stacking |
KR100943799B1 (ko) * | 2006-09-12 | 2010-02-23 | 닛토덴코 가부시키가이샤 | 다이싱·다이본드 필름 |
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