CN1680504A - 切片粘合膜 - Google Patents

切片粘合膜 Download PDF

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CN1680504A
CN1680504A CNA2005100697454A CN200510069745A CN1680504A CN 1680504 A CN1680504 A CN 1680504A CN A2005100697454 A CNA2005100697454 A CN A2005100697454A CN 200510069745 A CN200510069745 A CN 200510069745A CN 1680504 A CN1680504 A CN 1680504A
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layer
die bonding
bonding film
dicing die
thermosetting resin
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H·金
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Henkel AG and Co KGaA
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National Starch and Chemical Investment Holding Corp
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Abstract

一种置于半导体硅晶片和切片支撑带之间的切片粘合膜，该切片粘合膜包括：胶粘层1，其与切片带接触，胶粘层2，其与半导体硅晶片接触，其中胶粘层2对硅晶片的粘性比胶粘层1对切片带的粘性至少高出0.1N/cm。

Description

切片粘合膜
技术领域
本发明涉及一种多层粘胶膜，它含有热塑性橡胶和热固性树脂的组合物。该膜尤其用作半导体包装的切片粘合膜。
背景技术
将半导体晶片粘接到基材上的一种方法是将晶片粘合胶粘剂以膜的形式置于晶片和基材之间。将粘胶膜置于半导体硅晶片上，然后锯成单独的碎片或小片。在切割过程中，为了保护并支撑硅晶片，粘胶膜与一种带子接触，这种带子被称为切片带。用于这种结构的粘胶膜就被称为“切片粘合”膜。这样就在晶片被切割前构造了晶片、粘胶膜以及切片带的组合。
一种将粘胶膜和切片带应用于晶片的构造方法是首先将粘胶膜施加在晶片上，然后再将切片带施加在粘胶膜上。第二种构造方法是首先将粘胶膜施加在切片带上，然后再将粘胶膜和切片带的组合施加到晶片上。
在晶片被切割后，带有胶粘剂的单个晶片从切片带上移走，置于基材上进行下一步的制造程序。为了移走附带胶粘剂的晶片，胶粘剂对硅晶片的粘合力要大于对切片带的粘合力。目前得到的切片粘合膜是由单层胶粘剂组成的。为了使带有胶粘剂的晶片从切片带上脱离下来，在胶粘剂对硅片的粘性和胶粘剂对切片带的粘性之间必须存在足够的差别。
在温度为环境温度至50℃、压力为70000-700000Pa的条件下，将切片粘合膜层压在半导体晶片上。层压温度高于50℃通常是获得硅和现有材料之间足够粘性所要求的，但这样的温度由于热应力的存在使得晶片产生明显的变形。高温还会引起胶粘剂对切片带的粘结太强，当将其拿起用于后续的制造步骤时导致其从硅片脱离。但是，当所用温度低于50℃时，结果常常是对硅片的粘性不足，当拿起晶片时胶粘膜留在切片带上。
本发明通过提供一种多层膜来解决上述问题，在不引起晶片变形或防止晶片和胶粘剂从切片带上剥离的层压温度下，该多层膜对硅晶片和切片带具有不同程度的粘性。
发明内容
本发明是用于半导体硅晶片的切片粘胶膜，其置于半导体硅晶片和切片支撑带之间，所述切片支撑带包括(a)胶粘剂层1，该层与切片带相接触，和(b)胶粘剂层2，该层与半导体硅晶片相接触，其中层2与硅晶片的粘性比层1与切片带的粘性高出至少0.1N/cm。在一个实施方案中，层1胶粘剂对切片带的特征剥离强度为0.05-小于0.5N/cm；而层2胶粘剂对硅晶片的特征剥离强度为0.5N/cm或更高，只要两个粘性值至少有0.1N/cm的差别。多层膜可以满足切片粘合过程中对所用材料粘性的专门定制。
适宜的切片带为聚烯烃和聚(氯乙烯)膜，如Lintec公司以商标名AdwillG-64出售的产品或Nitto Denko公司以商标名Elepholder V-8-T销售的产品。其他适宜的切片带还有由聚酯或聚酰亚胺组成的切片带。这些带子可以商购且可为用于胶粘剂的紫外光辐射活化作用或者用于压敏性活化作用的形式。在上述使用紫外光带的情况中，在紫外光辐射后，所需胶粘剂对紫外光带的特征剥离强度为0.05-小于0.5N/cm。
具体实施方式
层1可以是任何的胶粘剂组合物，其对切片带的特征剥离强度为0.05-小于0.5N/cm，且该层可以层压在层2上。层2可以是任何的胶粘剂组合物，其对硅晶片的特征剥离强度为0.5N/cm或更高，且可以层压在层1上。在一些情况下，可以超过上述的范围，只要在剥离强度之间存在一个至少为0.1N/cm的差值。
尽管满足上述剥离强度和层压标准的任何粘合剂都可以使用，但是适宜于层1和层2的配方中应当含有(a)热塑性橡胶，(b)热固性树脂，(c)硬化剂，(d)促进剂，以及(e)填料，其中层1的热固性树脂的软化点高于60℃，层2的热固性树脂的软化点低于60℃。在本发明说明书范围内，材料的软化点定义为其熔点(Tm)或玻璃化转变温度(Tg)。这样的实施方案中，典型的重量百分比范围为30-85wt％的热塑性橡胶，15-70wt％的热固性树脂，0.05-40wt％的硬化剂，0.01-10wt％的促进剂和1-80wt％的填料。
在层1的另一个实施方案中，热固性树脂为一种固体环氧树脂，其软化点高于60℃，环氧当量重(WPE)为100-1000。适宜的固体环氧树脂包括ShellChemicals公司和Dainippon Ink and Chemicals公司销售的双酚A型，双酚F型，可溶可熔酚醛型或甲酚可溶酚醛型环氧树脂。
在层2的另一个实施方案中，热固性树脂是环氧树脂，如双酚A环氧树脂，双酚F环氧树脂，可溶可熔酚醛环氧树脂或甲酚可溶酚醛环氧树脂，其环氧当量重(WPE)为100-1000，且软化点低于60℃。这些环氧树脂由Shell Chemicals公司和Dainippon Ink and Chemicals公司销售。
在层2的另外一个实施方案中，可以使用热固性树脂的组合物，这种情况下，热固性树脂总量的至少20％的软化点应该低于60℃。除了环氧树脂组合物，其他适宜用于层2的热固性树脂包括马来酰亚胺，丙烯酸酯，乙烯基醚，以及聚丁二烯，其分子中至少有一个双键。
适宜的马来酰亚胺树脂包括具有属于此类结构
Figure A20051006974500061
的树脂，其中n为1-3，且X1为脂肪族或芳香族基团。代表性的X1包括聚丁二烯，聚碳酸酯，聚氨酯，聚醚，聚酯，简单碳水化合物，以及含有如羰基、羧基、酰胺、氨基甲酸酯、脲或醚官能团的简单碳水化合物。这些类型的树脂可以商购，例如可以购自National Starch and Chemical Company以及Dainippon Ink and Chemical，Inc。在一个实施方案中，马来酰亚胺树脂选自
，其中C36代表36个碳原子的线形或支链(带有或不带有循环部分)；
和
适宜的丙烯酸酯树脂包括具有属于此类结构
Figure A20051006974500074
的树脂，其中n为1-6，R1为-H或-CH3。X2为芳族或脂肪族基团。X2的例子包括聚丁二烯，聚碳酸酯，聚氨酯，聚醚，聚酯，简单的碳水化合物以及含有如羰基、羧基、酰胺、氨基甲酸酯、脲或醚官能团的简单碳水化合物。可商购的材料包括Kyoeisha化学有限公司提供的(甲基)丙烯酸丁酯，(甲基)丙烯酸异丁酯，(甲基)丙烯酸-2-乙基己酯，(甲基)丙烯酸异癸酯，(甲基)丙烯酸正月桂酯，(甲基)丙烯酸烷基酯，(甲基)丙烯酸十三烷基酯，(甲基)丙烯酸正十八烷基酯，(甲基)丙烯酸环己基酯，(甲基)丙烯酸四氢糠基酯，(甲基)丙烯酸2-苯氧基乙酯，(甲基)丙烯酸异冰片基酯，二(甲基)丙烯酸1，4丁二醇酯，二(甲基)丙烯酸1，6己二醇酯，二(甲基)丙烯酸1，9-壬二醇酯，(甲基)丙烯酸全氟辛基乙酯，二(甲基)丙烯酸1，10-癸二醇酯，壬基酚聚丙氧基(甲基)丙烯酸酯，以及聚戊氧基四氢糠基丙烯酸酯(polypentoxylate tetrahydrofufurylacrylate)；Sartomer公司提供的聚丁二烯尿烷二甲基丙烯酸酯(CN302，NTX6513)和聚丁二烯二甲基丙烯酸酯(CN301，NTX6039，PRO6270)；Negami化学工业有限公司提供的聚碳酸酯氨基甲酸酯二丙烯酸酯(ArtResinUN9200A)；Radcure Specialities公司提供的丙烯酸酯化脂族聚氨酯低聚物(Ebecryl230，264，265，270，284，4830，4833，4834，4835，4866，4881，4883，8402，8800-20R，8803，8804)；Radcure Specialities公司提供的聚酯丙烯酸酯低聚物(Ebecryl657，770，810，830，1657，1810，1830)；Sartomer公司提供的环氧丙烯酸酯树脂(CN104，111，112，115，116，117，118，119，120，124，136)。在一个实施方案中，丙烯酸酯树脂选自：丙烯酸异冰片酯，甲基丙烯酸异冰片酯，丙烯酸月桂酯，甲基丙烯酸月桂酯，带有丙烯酸酯官能团的聚丁二烯和带有甲基丙烯酸酯官能团的聚丁二烯。
适宜的乙烯醚树脂包括具有此类结构
Figure A20051006974500081
的化合物，其中n为1-6，X3为芳族或脂族基团。代表性X3包括聚丁二烯，聚碳酸酯，聚氨酯，聚醚，聚酯，简单的碳氢化合物以及含有如羰基，羧基，酰胺，氨基甲酸酯，脲或醚官能团的简单碳水化合物。可商购的树脂包括International Speciality Products(ISP)提供的环己烷(cyclohxnane)二甲醇二乙烯基醚，十二烷基乙烯醚，环己基乙烯醚，2-乙基己基乙烯醚，二丙二醇二乙烯基醚，己二醇二乙烯基醚，十八烷基乙烯醚以及丁二醇二乙烯基醚；Sigma Aldrich公司提供的Vectomer4010，4020，4030，4040，4051，4210，4220，4230，4060，5015。
适宜的聚丁二烯树脂包括聚丁二烯类，环氧化的聚丁二烯类，马来酸型聚丁二烯类，丙烯酸酯化聚丁二烯类，丁二烯苯乙烯共聚物以及丁二烯丙烯腈共聚物。可商购的材料包括Sartomer公司提供的均聚丁二烯(Ricon130，131，134，142，150，152，153，154，156，157，P30D)；Sartomer公司提供的丁二烯与苯乙烯的无规共聚物(Ricon100，181，184)，Sartomer公司提供的马来酸化的聚丁二烯(Ricon130MA8，130MA13，130MA20，131MA5，131MA10，131MA17，131MA20，156MA17)；Sartomer公司提供的丙烯酸酯化聚丁二烯类(CN302，NTX6513，CN301，NTX6039，PRO6270，Ricacryl3100，Ricacryl3500)；Sartomer公司提供的环氧化的聚丁二烯类(Polybd600，605)和Daicel化学工业有限公司提供的Epolead PB3600；以及Hanse化学公司提供的丙烯腈和丁二烯共聚物(Hycar CTBN系列，ATBN系列，VTBN系列以及ETBN系列)。
对于层1或层2来说，热塑性橡胶加入的量为30-85wt％；适宜的热塑性橡胶包括羧基封端的丁二烯腈(CTBN)/环氧加合物以及腈丁二烯橡胶(NBR)。CTBN环氧加合物由约20-80wt％的CTBN和约20-80wt％的二环氧甘油醚双酚A：双酚A型环氧(DGEBA)组成。CTBN的分子量约为100-1000，DGEBA的当量重量(单位环氧的重量，g/环氧)为约500-5000。最终加合物的当量重量为约500-5000g/环氧，且150℃下的熔体粘度为5000-100000cP。从Noveon公司可购得多种CTBN材料，从Dainippon Ink and Chemicals公司和从ShellChemicals公司可购得多种双酚A型环氧材料，NBR由20-50wt％的丙烯腈和50-80wt％的丁二烯组成，其玻璃化转变温度(Tg)为-40-+20℃，分子量(Mw)为100000-1000000。Zeon公司出售此类NBR橡胶。
层1或层2的硬化剂的用量为0.5-40wt％；适宜的硬化剂包括酚醛塑料，芳族二胺，双氰胺和聚酰胺。适宜的酚醛塑料的OH值为90-110，软化点为60-110℃，可从Schenectady international公司商购。适宜的芳族二胺为伯二氨，包括二氨基二苯砜和二氨基二苯甲烷，可从Sigma-Aldrich公司商购。适宜的双氰胺可从SKW Chemicals公司商购。适宜的聚酰胺可以从Air Products andChemicals公司商购。
层1或层2的促进剂用量为0.01-10wt％；适宜的促进剂包括咪唑或叔胺。适宜的咪唑可从Air Products and Chemicals公司商购。适宜的叔胺可以从Sigma-Aldrich公司商购。
层1或层2所用填料的粒度为0.1-10μm，用量为1-80wt％。依最终应用，这些填料可以是导电或导热的，也可以是非传导性质的。适宜导体填料的例子包括银、铜、金、钯、铂、镍、铝和碳黑。非传导性的填料包括氧化铝、氢氧化铝、硅土、蛭石、云母、钙硅石、碳酸钙、氧化钛、沙、玻璃、硫酸钡以及卤代乙烯聚合物如四氟乙烯、三氟乙烯、偏二氟乙烯、氟化乙烯、偏二氯乙烯和氯化乙烯。
其他的添加剂如增粘剂也可以根据本领域已知的类型和量加入。
切片粘合膜可在商业上可接受的范围内来构造，其对切片带的特性剥离强度为0.05-小于0.5N/cm，对晶片的特性剥离强度为0.5N/cm或更高。该膜可以在商业上容许的条件下，即25-50℃的温度和70000-700000Pa的压力下被层压到半导体晶片上。
实施例
在下面的实施例中，制得四种切片粘合膜，在粘结到硅晶片上后，对其性能进行比较。实施例1和2是本发明的两层膜，实施例3和4为对比的单层膜。实施例5列出性能结果和测试方法。
实施例1.膜A
层1(用于粘结到切片带上)是通过将下述的组分以各自的重量份数(pbw)在足量的甲基乙基酮中进行混合，制得浆状物而制得的：
60pbw环氧改性的CTBN(Mn：15015，Tg：-17℃)；
29pbw甲酚可溶可熔酚醛环氧树脂(环氧当量：220，软化点：90℃)；
7pbw3，3′-二氨基二苯砜；
1pbw2-苯基-4-甲基咪唑；
3pbw硅石填料(平均尺寸：0.5μm)
将该浆状物涂布到50μm厚的脱膜涂布聚酯膜上并在90℃下干燥5分钟制得膜A，层1的厚度为10μm。
用于粘合硅晶片的层2是通过将下述组分以各自的重量份数(pbw)在足量的甲基乙基酮中进行混合制得浆状物而制成的：
60pbw环氧改性的CTBN(Mn：15015，Tg：-17℃)；
30pbw双酚F环氧树脂(环氧当量：290，软化点：4℃，50℃下粘度：35000mPaS)；
6pbw3，3′-二氨基二苯砜；
1pbw2-苯基-4-甲基咪唑；
3pbw硅石填料(平均尺寸：0.5μm)
将该浆状物涂布到50μm厚的脱膜涂布聚酯膜上并在90℃下干燥5分钟制得膜A，层2的厚度为15μm。
使用层压辊，在80℃和0.21MPa压力下将上述两层层压在一起，之后层压膜被切割成直径为220mm的圆形。将层1的脱膜衬垫剥离，并将切片带(AdwillG-64，可从Lintec Corporation商购)在室温和0.21MPa压力下层压在层1的表面上。
实施例2.膜B
层1(用于粘合到切片带上)是通过将下述的组分以各自的重量份数(pbw)在足量的甲基乙基酮中进行混合，制得浆状物而制成的：
60pbw环氧改性的CTBN(Mn：15015，Tg：-17℃)；
29pbw甲酚可溶可熔酚醛环氧树脂(环氧当量：220，软化点：90℃)；
7pbw3，3′-二氨基二苯砜；
1pbw2-苯基-4-甲基咪唑；
3pbw硅石填料(平均尺寸：0.5μm)
将该浆状物涂布到50μm厚的脱膜涂布聚酯膜上并在90℃下干燥5分钟制得层1，厚度为13μm。
用于粘合硅晶片的层2是通过将下述组分以各自的重量份数(pbw)在足量的甲基乙基酮中进行混合，制得浆状物而制成的：
25pbw羧化丙烯腈丁二烯共聚物橡胶(Mw：350000，丙烯腈含量：27wt％，Tg：-20℃)；
15pbw乙烯基封端的丁二烯腈橡胶(丙烯腈含量：21.5wt％，Tg：-45℃)；
20pbw 4，4′-双马来酰亚氨基二苯甲烷；
25pbw三环癸烷二甲醇和3-异丙烯基-二甲基苄基异氰酸酯的加合物；
5pbw过氧化二枯基
10pbw硅石填料(平均尺寸：0.5μm)
将该浆状物涂布到50μm厚的脱膜涂布聚酯膜上并在90℃下干燥5分钟制得层2，其厚度为12μm。
使用层压辊，在80℃和0.21MPa压力下将上述两层层压在一起，之后层压膜被切割成直径为220mm的圆形。将层1的脱膜衬垫剥离，并将切片带(AdwillG-64)在室温和0.21MPa压力下层压在层1的表面上。
比较实施例3.膜C
膜C是通过将下述组分以各自的重量份数(pbw)在足量的甲基乙基酮中进行混合，制得浆状物而制成的：
60pbw环氧改性的CTBN(Mn：15015，Tg：-17℃)；
29pbw甲酚可溶可熔酚醛环氧树脂(环氧当量：220，软化点：90℃)；
7pbw3，3′-二氨基二苯砜；
1pbw2-苯基-4-甲基咪唑；
3pbw硅石填料(平均尺寸：0.5μm)
将该浆状物涂布到50μm厚的脱膜涂布聚酯膜上并在90℃下干燥5分钟制得膜C，其厚度为25μm。将该膜的脱膜衬垫剥离，并将切片带(AdwillG-64)在室温和0.21MPa压力下层压在其表面上。
比较实施例4.膜D
膜D是通过将下述组分以各自的重量份数(pbw)在足量的甲基乙基酮中进行混合，制得浆状物而制成的：
25pbw羧化丙烯腈丁二烯共聚物橡胶(Mw：350000，丙烯腈含量：27wt％，Tg：-20℃)；
15pbw乙烯基封端的丁二烯腈橡胶(丙烯腈含量：21.5wt％，Tg：-45℃)；
20pbw 4，4′-双马来酰亚氨基二苯甲烷；
25pbw三环癸烷二甲醇和3-异丙烯基-二甲基苄基异氰酸酯的加合物；
5pbw过氧化二枯基
10pbw硅石填料(平均尺寸：0.5μm)
将该浆状物涂布到50μm厚的脱膜涂布聚酯膜上并在90℃下干燥5分钟制得膜D，其厚度为25μm。将该膜的离型衬垫剥离，并将切片带(Adwil)在室温和0.21MPa压力下层压在其表面上。
实施例5.性能与测试方法
在不同温度下，将膜A-D以及可商购的胶粘带(膜H)层压在硅晶片上，用紫外线进行辐射，对90°剥离强度进行测试。测试结果见表1。
表1-不同层压温度下的剥离强度(N/cm)
层压温度(℃) 基材 膜A  膜B  膜C   膜D   膜H
    30 切片带 0.14  0.13  0.15   0.59
    30 硅晶片 0.75  0.53  0.02   0.69
    40 切片带 0.15  0.15  0.16   0.65   0.10
    40 硅晶片 0.85  0.67  0.03   0.68   0.08
    50 切片带 0.16  0.17  0.19   0.77   0.08
    50 硅晶片 0.83  0.74  0.05   0.67   0.13
    60 切片带 0.18  0.19  0.18   0.8   0.07
    60 硅晶片 0.91  0.85  0.27   0.84   0.16
    70 切片带 0.21  0.23  0.19   0.84   0.08
    70 硅晶片 0.95  0.83  0.52   0.96   0.35
    80 切片带 0.25  0.26  0.23   0.97   0.06
    80 硅晶片 1.1  0.88  0.68   0.92   0.51
    90 切片带 0.24  0.23  0.25   1.02
    90 硅晶片 1.15  0.91  0.82   0.96
结果显示两个多层膜A和B在所有的测试层压温度下都给出对于良好的切片和晶片粘着性能而言可接受的剥离强度，对切片带的剥离强度为0.05-小于0.5N/cm，对硅晶片的剥离强度为0.5-10N/cm。比较例膜C在所有层压温度下，对切片带都具有可接受的剥离强度，然而在低于商业上所需的50℃的层压温度下，其对硅晶片的粘性是不令人满意的。比较例膜D在所有层压温度下对硅晶片都具有可接受的剥离强度，然而在所有测试条件下，其对切片带的粘性都太高。比较例商品膜H对切片带具有良好的粘性，但在低于50℃时对硅晶片的粘度不足。
首先将脱膜衬垫从切片带和要测试的膜上移走，制得样本用于测试对切片带的剥离强度。之后将上述两层膜在室温和0.21MPa的压力下层压在一起并切成10mm宽的带子。从膜的剩余暴露表面去除脱膜衬垫，并随后将层压结构(切片带加膜)在合适的试验温度下层压到载玻片上，使切片带位于上表面，膜贴着载玻片。剥离由人工开始。
首先将脱膜衬垫从要测试的膜上移走并将其在指定的测试温度下层压到硅晶片上，制得样本用于测试对硅晶片的剥离强度。然后将压敏性胶粘剂(PSA)在室温和0.21MPa的压力下施加在膜上，该压敏性胶粘剂对带有膜的晶片具有超过20N/cm的剥离强度。10mm宽的带有PSA的膜段被切割(当粘结在晶片上的时候)并开始用人工剥离样品。
在90°、50mm/min的剥离速度下使用Imada SV-52N剥离测试机于室温测试剥离强度。结果汇集起来并且取平均值。

Claims (9)

1、一种置于半导体硅晶片和切片支撑带之间的切片粘合膜，该切片粘合膜包括：
(a)粘胶层1，其与切片支撑带接触，
(b)粘胶层2，其与半导体硅晶片接触，
其中层2对硅晶片的粘性比层1对切片带的粘性至少高出0.1N/cm。
2、权利要求1所述的切片粘合膜，其中所述粘胶层1对切片带的特性剥离强度为0.05-小于0.5N/cm，而所述粘胶层2对半导体硅晶片的特性剥离强度为0.5N/cm或更高。
3、权利要求1所述的切片粘合膜，其中所述胶粘层1包括(a)热塑性橡胶，(b)软化点高于60℃的热固性树脂，(c)硬化剂，(d)促进剂，以及(e)填料；其中所述胶粘层2包括(a)热塑性橡胶，(b)热固性树脂，其中至少20％的热固性树脂的软化点低于60℃，(c)硬化剂，(d)促进剂，以及(e)填料。
4、权利要求3所述的切片粘合膜，其中所述胶粘层1包括(a)30-85wt％的热塑性橡胶，(b)15-70wt％的热固性树脂，其软化点高于60℃，(c)0.05-40wt％的硬化剂，(d)0.01-10wt％的促进剂，以及(e)1-80wt％的填料；所述胶粘层2包括(a)30-85wt％的热塑性橡胶，(b)15-70wt％的热固性树脂，其中至少20％的热固性树脂的软化点低于60℃，(c)0.05-40wt％的硬化剂，(d)0.01-10wt％的促进剂，以及(e)1-80wt％的填料。
5、权利要求1所述的切片粘合膜，其中层1中的热固性树脂为软化点高于60℃的固体环氧且其环氧当量为100-1000。
6、权利要求1所述的切片粘合膜，其中层2中的热固性树脂为软化点低于60℃的环氧且其环氧当量为100-1000。
7、权利要求1所述的切片粘合膜，其中层2中的热固性树脂为热固性树脂的混合物，层2中全部热固性树脂中的至少20％具有低于60℃的软化点。
8、权利要求1所述的切片粘合膜，其中所述热塑性橡胶为羧基封端的丁二烯腈/环氧加合物和腈丁二烯橡胶。
9、权利要求8所述的切片粘合膜，其中所述羧基封端的丁二烯腈/环氧加合物由约20-80wt％羧基封端的丁二烯腈和约20-80wt％的二环氧甘油醚双酚A：双酚A环氧组成。
CNA2005100697454A 2004-04-01 2005-04-01 切片粘合膜 Pending CN1680504A (zh)

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