TWI369846B - Mosfet gate drive with reduced power loss - Google Patents

Mosfet gate drive with reduced power loss

Info

Publication number
TWI369846B
TWI369846B TW097117729A TW97117729A TWI369846B TW I369846 B TWI369846 B TW I369846B TW 097117729 A TW097117729 A TW 097117729A TW 97117729 A TW97117729 A TW 97117729A TW I369846 B TWI369846 B TW I369846B
Authority
TW
Taiwan
Prior art keywords
power loss
gate drive
reduced power
mosfet gate
mosfet
Prior art date
Application number
TW097117729A
Other languages
English (en)
Other versions
TW200903969A (en
Inventor
Richard K Williams
Original Assignee
Advanced Analogic Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Analogic Tech Inc filed Critical Advanced Analogic Tech Inc
Publication of TW200903969A publication Critical patent/TW200903969A/zh
Application granted granted Critical
Publication of TWI369846B publication Critical patent/TWI369846B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/94—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
    • H03K2217/9401—Calibration techniques
    • H03K2217/94031—Calibration involving digital processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
TW097117729A 2007-05-21 2008-05-14 Mosfet gate drive with reduced power loss TWI369846B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93109707P 2007-05-21 2007-05-21
US11/890,942 US7812647B2 (en) 2007-05-21 2007-08-08 MOSFET gate drive with reduced power loss

Publications (2)

Publication Number Publication Date
TW200903969A TW200903969A (en) 2009-01-16
TWI369846B true TWI369846B (en) 2012-08-01

Family

ID=40071824

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097117729A TWI369846B (en) 2007-05-21 2008-05-14 Mosfet gate drive with reduced power loss

Country Status (8)

Country Link
US (2) US7812647B2 (zh)
EP (1) EP2156558A4 (zh)
JP (1) JP5261777B2 (zh)
KR (1) KR101222793B1 (zh)
CN (2) CN103152022B (zh)
HK (1) HK1182842A1 (zh)
TW (1) TWI369846B (zh)
WO (1) WO2008153631A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI485948B (zh) * 2013-06-07 2015-05-21 Asustek Comp Inc 電力系統及其短路保護電路

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JP2010528575A (ja) 2010-08-19
EP2156558A4 (en) 2012-04-11
HK1182842A1 (zh) 2013-12-06
EP2156558A1 (en) 2010-02-24
KR101222793B1 (ko) 2013-01-15
JP5261777B2 (ja) 2013-08-14
US7812647B2 (en) 2010-10-12
CN101785187B (zh) 2013-02-27
CN103152022B (zh) 2016-03-09
US7994827B2 (en) 2011-08-09
CN101785187A (zh) 2010-07-21
WO2008153631A1 (en) 2008-12-18
US20080290911A1 (en) 2008-11-27
CN103152022A (zh) 2013-06-12
US20110018593A1 (en) 2011-01-27
TW200903969A (en) 2009-01-16

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