TWI369262B - - Google Patents

Info

Publication number
TWI369262B
TWI369262B TW098120374A TW98120374A TWI369262B TW I369262 B TWI369262 B TW I369262B TW 098120374 A TW098120374 A TW 098120374A TW 98120374 A TW98120374 A TW 98120374A TW I369262 B TWI369262 B TW I369262B
Authority
TW
Taiwan
Application number
TW098120374A
Other versions
TW201008691A (en
Inventor
Norihito Kawaguchi
Ryusuke Kawakami
Kenichiro Nishida
Jun Izawa
Miyuki Masaki
Masaru Morita
Original Assignee
Ihi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ihi Corp filed Critical Ihi Corp
Publication of TW201008691A publication Critical patent/TW201008691A/zh
Application granted granted Critical
Publication of TWI369262B publication Critical patent/TWI369262B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • B23K26/128—Laser beam path enclosures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • B23K26/1464—Supply to, or discharge from, nozzles of media, e.g. gas, powder, wire
    • B23K26/147—Features outside the nozzle for feeding the fluid stream towards the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
TW098120374A 2008-06-30 2009-06-18 Laser anneal apparatus TW201008691A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008170007A JP5540476B2 (ja) 2008-06-30 2008-06-30 レーザアニール装置

Publications (2)

Publication Number Publication Date
TW201008691A TW201008691A (en) 2010-03-01
TWI369262B true TWI369262B (zh) 2012-08-01

Family

ID=41465828

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098120374A TW201008691A (en) 2008-06-30 2009-06-18 Laser anneal apparatus

Country Status (7)

Country Link
US (1) US8575515B2 (zh)
EP (1) EP2299478A4 (zh)
JP (1) JP5540476B2 (zh)
KR (1) KR101168978B1 (zh)
CN (1) CN102077322B (zh)
TW (1) TW201008691A (zh)
WO (1) WO2010001727A1 (zh)

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EP2703109A1 (en) * 2012-09-04 2014-03-05 Linde Aktiengesellschaft Methods of and device for providing a heated or cooled protective gas for welding, especially laser welding
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KR102298008B1 (ko) * 2015-02-09 2021-09-06 삼성디스플레이 주식회사 레이저빔 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
US11097367B2 (en) * 2015-05-21 2021-08-24 Illinois Tool Works Inc. System and method for reducing weld root concavity
JP6124425B1 (ja) 2015-10-26 2017-05-10 株式会社日本製鋼所 レーザ処理装置整流装置およびレーザ処理装置
KR101862085B1 (ko) * 2016-03-03 2018-05-30 에이피시스템 주식회사 Ela 공정용 탈산소 장치
JP6999264B2 (ja) * 2016-08-04 2022-01-18 株式会社日本製鋼所 レーザ剥離装置、レーザ剥離方法、及び有機ｅｌディスプレイの製造方法
US11810799B2 (en) * 2016-10-20 2023-11-07 Jsw Aktina System Co., Ltd. Laser processing apparatus and laser processing method
CN107421916B (zh) * 2017-05-02 2021-02-23 京东方科技集团股份有限公司 检测装置、工艺系统和检测方法
CN108048913A (zh) * 2017-12-14 2018-05-18 友达光电（昆山）有限公司 一种非晶硅转变为多晶硅的结晶激光装置及方法
CN112236843A (zh) * 2018-06-06 2021-01-15 堺显示器制品株式会社 激光退火方法、激光退火装置及有源矩阵基板的制造方法

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Also Published As

Publication number Publication date
EP2299478A4 (en) 2017-03-01
CN102077322A (zh) 2011-05-25
WO2010001727A1 (ja) 2010-01-07
US20110108535A1 (en) 2011-05-12
KR20110022597A (ko) 2011-03-07
TW201008691A (en) 2010-03-01
KR101168978B1 (ko) 2012-07-26
US8575515B2 (en) 2013-11-05
JP2010010526A (ja) 2010-01-14
CN102077322B (zh) 2012-10-10
JP5540476B2 (ja) 2014-07-02
EP2299478A1 (en) 2011-03-23

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