TWI367266B - Al-ni-la system al-based alloy sputtering target and process for producing the same - Google Patents

Al-ni-la system al-based alloy sputtering target and process for producing the same

Info

Publication number
TWI367266B
TWI367266B TW096142875A TW96142875A TWI367266B TW I367266 B TWI367266 B TW I367266B TW 096142875 A TW096142875 A TW 096142875A TW 96142875 A TW96142875 A TW 96142875A TW I367266 B TWI367266 B TW I367266B
Authority
TW
Taiwan
Prior art keywords
producing
same
based alloy
sputtering target
alloy sputtering
Prior art date
Application number
TW096142875A
Other languages
English (en)
Other versions
TW200844248A (en
Inventor
Masaya Ehira
Katsutoshi Takagi
Toshihiro Kugimiya
Yoichiro Yoneda
Hiroshi Gotou
Original Assignee
Kobe Steel Ltd
Kobelco Res Inst Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd, Kobelco Res Inst Inc filed Critical Kobe Steel Ltd
Publication of TW200844248A publication Critical patent/TW200844248A/zh
Application granted granted Critical
Publication of TWI367266B publication Critical patent/TWI367266B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/115—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/17—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by forging
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/08—Metallic material containing only metal elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/123—Spraying molten metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/18—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by using pressure rollers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
TW096142875A 2006-11-20 2007-11-13 Al-ni-la system al-based alloy sputtering target and process for producing the same TWI367266B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006313506A JP4377906B2 (ja) 2006-11-20 2006-11-20 Ａｌ−Ｎｉ−Ｌａ系Ａｌ基合金スパッタリングターゲット、およびその製造方法

Publications (2)

Publication Number Publication Date
TW200844248A TW200844248A (en) 2008-11-16
TWI367266B true TWI367266B (en) 2012-07-01

Family

ID=38921692

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096142875A TWI367266B (en) 2006-11-20 2007-11-13 Al-ni-la system al-based alloy sputtering target and process for producing the same

Country Status (6)

Country Link
US (1) US9212418B2 (zh)
EP (1) EP1923479A1 (zh)
JP (1) JP4377906B2 (zh)
KR (1) KR100943117B1 (zh)
CN (1) CN100575542C (zh)
TW (1) TWI367266B (zh)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3940385B2 (ja) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP4330517B2 (ja) * 2004-11-02 2009-09-16 株式会社神戸製鋼所 Ｃｕ合金薄膜およびＣｕ合金スパッタリングターゲット並びにフラットパネルディスプレイ
JP4579709B2 (ja) * 2005-02-15 2010-11-10 株式会社神戸製鋼所 Ａｌ−Ｎｉ−希土類元素合金スパッタリングターゲット
JP4117001B2 (ja) 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
US7683370B2 (en) * 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7781767B2 (en) 2006-05-31 2010-08-24 Kobe Steel, Ltd. Thin film transistor substrate and display device
JP2008098611A (ja) * 2006-09-15 2008-04-24 Kobe Steel Ltd 表示装置
JP4280277B2 (ja) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 表示デバイスの製法
WO2008047726A1 (en) 2006-10-13 2008-04-24 Kabushiki Kaisha Kobe Seiko Sho Thin film transistor substrate and display device
JP4170367B2 (ja) 2006-11-30 2008-10-22 株式会社神戸製鋼所 表示デバイス用Ａｌ合金膜、表示デバイス、及びスパッタリングターゲット
JP4355743B2 (ja) * 2006-12-04 2009-11-04 株式会社神戸製鋼所 Ｃｕ合金配線膜とそのＣｕ合金配線膜を用いたフラットパネルディスプレイ用ＴＦＴ素子、及びそのＣｕ合金配線膜を作製するためのＣｕ合金スパッタリングターゲット
JP4705062B2 (ja) * 2007-03-01 2011-06-22 株式会社神戸製鋼所 配線構造およびその作製方法
JP2009004518A (ja) * 2007-06-20 2009-01-08 Kobe Steel Ltd 薄膜トランジスタ基板、および表示デバイス
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
US20090001373A1 (en) * 2007-06-26 2009-01-01 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit
JP2009008770A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 積層構造およびその製造方法
JP5143649B2 (ja) 2007-07-24 2013-02-13 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｓｉ系Ａｌ合金スパッタリングターゲットおよびその製造方法
JP4611417B2 (ja) * 2007-12-26 2011-01-12 株式会社神戸製鋼所 反射電極、表示デバイス、および表示デバイスの製造方法
JP4469913B2 (ja) 2008-01-16 2010-06-02 株式会社神戸製鋼所 薄膜トランジスタ基板および表示デバイス
US20100328247A1 (en) * 2008-02-22 2010-12-30 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Touch panel sensor
JP5432550B2 (ja) * 2008-03-31 2014-03-05 株式会社コベルコ科研 Ａｌ基合金スパッタリングターゲットおよびその製造方法
JP5139134B2 (ja) * 2008-03-31 2013-02-06 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｃｕ系Ａｌ基合金スパッタリングターゲットおよびその製造方法
CN101918888B (zh) * 2008-03-31 2013-07-31 株式会社神户制钢所 显示装置、其制造方法及溅射靶
JP5475260B2 (ja) * 2008-04-18 2014-04-16 株式会社神戸製鋼所 配線構造、薄膜トランジスタ基板およびその製造方法、並びに表示装置
KR20100127290A (ko) * 2008-04-23 2010-12-03 가부시키가이샤 고베 세이코쇼 표시 장치용 Ａｌ 합금막, 표시 장치 및 스퍼터링 타깃
JP5342810B2 (ja) * 2008-06-09 2013-11-13 株式会社コベルコ科研 Ａｌ基合金スパッタリングターゲット材の製造方法
KR20110028313A (ko) * 2008-07-03 2011-03-17 가부시키가이샤 고베 세이코쇼 배선 구조, 박막 트랜지스터 기판 및 그 제조 방법 및 표시 장치
JP2010065317A (ja) * 2008-08-14 2010-03-25 Kobe Steel Ltd 表示装置およびこれに用いるＣｕ合金膜
JP2010153365A (ja) 2008-11-19 2010-07-08 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器及び照明装置
JP4567091B1 (ja) 2009-01-16 2010-10-20 株式会社神戸製鋼所 表示装置用Ｃｕ合金膜および表示装置
US8349462B2 (en) * 2009-01-16 2013-01-08 Alcoa Inc. Aluminum alloys, aluminum alloy products and methods for making the same
WO2010110134A1 (ja) 2009-03-27 2010-09-30 日鉱金属株式会社 スパッタリング用ランタンターゲット
JP5456763B2 (ja) 2009-03-31 2014-04-02 Ｊｘ日鉱日石金属株式会社 スパッタリング用ランタンターゲット
CN102473732B (zh) 2009-07-27 2015-09-16 株式会社神户制钢所 布线结构以及具备布线结构的显示装置
KR101097316B1 (ko) * 2009-10-12 2011-12-23 삼성모바일디스플레이주식회사 유기 발광 소자
KR20110039810A (ko) 2009-10-12 2011-04-20 삼성모바일디스플레이주식회사 유기 발광 소자
JP5547574B2 (ja) * 2009-10-23 2014-07-16 株式会社神戸製鋼所 Ａｌ基合金スパッタリングターゲット
CN102101158B (zh) * 2009-12-19 2012-11-07 苏州春兴精工股份有限公司 铝锭含渣情况观察方法及其所用模具
JP2012180540A (ja) 2011-02-28 2012-09-20 Kobe Steel Ltd 表示装置および半導体装置用Ａｌ合金膜
JP5524905B2 (ja) 2011-05-17 2014-06-18 株式会社神戸製鋼所 パワー半導体素子用Ａｌ合金膜
JP2013084907A (ja) 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
WO2015118947A1 (ja) * 2014-02-07 2015-08-13 株式会社神戸製鋼所 フラットパネルディスプレイ用配線膜
CN104178666B (zh) * 2014-09-01 2016-02-24 浙江工贸职业技术学院 一种机翼蒙皮用合金
JP6043413B1 (ja) * 2015-08-03 2016-12-14 株式会社コベルコ科研 アルミニウムスパッタリングターゲット
WO2017218900A1 (en) 2016-06-16 2017-12-21 Ut-Battelle, Llc Structural direct-write additive manufacturing of molten metals
KR102656857B1 (ko) 2016-08-25 2024-04-12 삼성디스플레이 주식회사 편광소자, 편광소자 제조방법 및 표시 장치
KR102640080B1 (ko) * 2018-03-19 2024-02-26 삼성전자 주식회사 고내식-고광택 알루미늄계 스퍼터링 타겟 합금 조성, 미세구조 및 그 제조 방법
CN111112623B (zh) * 2020-01-09 2021-01-26 东南大学 一种组织致密喷射工模具钢的制备方法
CN112962069B (zh) * 2021-02-02 2023-04-28 长沙淮石新材料科技有限公司 一种含金属间化合物的铝合金靶材及其制备方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2601175B1 (fr) * 1986-04-04 1993-11-12 Seiko Epson Corp Cible de pulverisation cathodique et support d'enregistrement utilisant une telle cible.
JP2733006B2 (ja) * 1993-07-27 1998-03-30 株式会社神戸製鋼所 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
JPH07301705A (ja) * 1994-05-10 1995-11-14 Kobe Steel Ltd Ａｌ合金薄膜およびＡｌ合金薄膜形成用スパッタリングターゲット
WO1997013885A1 (en) * 1995-10-12 1997-04-17 Kabushiki Kaisha Toshiba Wiring film, sputter target for forming the wiring film and electronic component using the same
JP3358934B2 (ja) 1996-03-15 2002-12-24 株式会社神戸製鋼所 高融点金属含有Ａｌ基合金鋳塊のスプレーフォーミング法による製造方法
JP3212024B2 (ja) 1996-11-14 2001-09-25 日立金属株式会社 Ａｌ系スパッタリング用タ−ゲット材およびその製造方法
JPH10147860A (ja) 1996-11-15 1998-06-02 Hitachi Metals Ltd Ａｌ系スパッタリング用タ−ゲット材およびその製造方法
JP3365954B2 (ja) * 1997-04-14 2003-01-14 株式会社神戸製鋼所 半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜および半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜形成用スパッタリングターゲット
US20030052000A1 (en) * 1997-07-11 2003-03-20 Vladimir Segal Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
JP4197579B2 (ja) * 1997-12-24 2008-12-17 株式会社東芝 スパッタリングターゲットとそれを用いたＡｌ配線膜の製造方法および電子部品の製造方法
JP4237742B2 (ja) 1997-12-24 2009-03-11 株式会社東芝 スパッタリングターゲットの製造方法
JPH11337976A (ja) 1998-03-26 1999-12-10 Toshiba Corp 表示装置用アレイ基板及びこのアレイ基板を備えた平面表示装置
JP4663829B2 (ja) 1998-03-31 2011-04-06 三菱電機株式会社 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置
JP4458563B2 (ja) * 1998-03-31 2010-04-28 三菱電機株式会社 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法
JPH11293454A (ja) 1998-04-14 1999-10-26 Hitachi Metals Ltd Ａｌ系スパッタリング用ターゲット材及びその製造方法
JP4179489B2 (ja) * 1999-08-11 2008-11-12 日立金属株式会社 Ａｌ合金電極膜の製造方法
US20010047838A1 (en) * 2000-03-28 2001-12-06 Segal Vladimir M. Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions
JP2001279433A (ja) 2000-03-31 2001-10-10 Hitachi Metals Ltd 異常放電発生数が少ない純Ａｌターゲットの製造方法
JP4783525B2 (ja) * 2001-08-31 2011-09-28 株式会社アルバック 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット
JP2003273109A (ja) 2002-03-14 2003-09-26 Advanced Display Inc Ａｌ配線用薄膜及びその製造方法並びにこれを用いた液晶表示装置
JP3940385B2 (ja) * 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
JP2005303003A (ja) * 2004-04-12 2005-10-27 Kobe Steel Ltd 表示デバイスおよびその製法
US20050277002A1 (en) 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions
JP4541787B2 (ja) * 2004-07-06 2010-09-08 株式会社神戸製鋼所 表示デバイス
JP4330517B2 (ja) * 2004-11-02 2009-09-16 株式会社神戸製鋼所 Ｃｕ合金薄膜およびＣｕ合金スパッタリングターゲット並びにフラットパネルディスプレイ
JP2006220633A (ja) 2005-02-08 2006-08-24 Naoki Shoji ｅ−ｍａｉｌ携帯時計
JP4579709B2 (ja) 2005-02-15 2010-11-10 株式会社神戸製鋼所 Ａｌ−Ｎｉ−希土類元素合金スパッタリングターゲット
JP4117001B2 (ja) * 2005-02-17 2008-07-09 株式会社神戸製鋼所 薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
US7683370B2 (en) * 2005-08-17 2010-03-23 Kobe Steel, Ltd. Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
US7781767B2 (en) * 2006-05-31 2010-08-24 Kobe Steel, Ltd. Thin film transistor substrate and display device
JP4280277B2 (ja) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 表示デバイスの製法

Also Published As

Publication number Publication date
CN101187007A (zh) 2008-05-28
EP1923479A1 (en) 2008-05-21
JP2008127624A (ja) 2008-06-05
KR100943117B1 (ko) 2010-02-18
US9212418B2 (en) 2015-12-15
JP4377906B2 (ja) 2009-12-02
KR20080045629A (ko) 2008-05-23
TW200844248A (en) 2008-11-16
CN100575542C (zh) 2009-12-30
US20080121522A1 (en) 2008-05-29

Similar Documents

Publication Publication Date Title
TWI367266B (en) Al-ni-la system al-based alloy sputtering target and process for producing the same
TWI365917B (en) A1-based alloy sputtering target and process for producing the same
EP1887100A4 (en) CATHODIC SPUTTER TARGET AND METHOD OF MANUFACTURING THE SAME
EP1865090A4 (en) COPPER SPRAY TARGET IN A DEEP CUPETTE SHAPE AND PROCESS FOR PRODUCING THE SAME
AU2007292778A1 (en) Magnesium alloy member and method for producing the same
EP2284293A4 (en) SINTERED OXIDE SPRAY TARGET AND PROCESS FOR PRODUCTION THEREOF
EP2003219A4 (en) FORGED ALUMINUM ALLOY MEMBER AND METHOD FOR PRODUCING THE SAME
EP2330231A4 (en) SPUTTERING TARGET FOR HIGH-PURPOSE COPPER OR ALLOY WITH HIGH-PURPOSE COPPER, METHOD FOR PRODUCING THE SPUTTERING TARGET, HIGH-CREAM COPPER OR FILMING ALLOCATED TO A HIGH-PIP COPPER ALLOY
GB2455394B (en) Magnesium alloy member and method for making the same
WO2006119250A8 (en) System and method for processing electronic payments
GB0821141D0 (en) System for product authenication and tracking
EP2055797A4 (en) IRON ALLOY AND METHOD FOR MANUFACTURING THE SAME
SG137678A1 (en) Ag-bi-base alloy sputtering target, and method for producing the same
HK1130945A1 (zh) 數字合金及其形成方法
EP2042613A4 (en) COPPER BASED ROLL ALLOY AND METHOD OF MANUFACTURING THEREOF
TWI369406B (en) Co-fe-zr based alloy sputtering target material and process for production thereof
EP2034055A4 (en) METAL COMPOSITE FILM AND MANUFACTURING METHOD THEREFOR
EP1942204A4 (en) sputtering Target
IL174746A0 (en) Methods and systems for generating virtual radar targets
EP2143811A4 (en) MAGNESIUM ALLOYS AND PROCESS FOR PRODUCING THE SAME
EP2034035A4 (en) METHOD FOR PRODUCING AN ALUMINUM ALLOY PLATE AND ALUMINUM ALLOY PLATE
EP1876258A4 (en) sputtering Target
HK1134957A1 (en) System and method for target tracking
EP1892315A4 (en) TARGET FOR SPRAYING A RUTHENIUM ALLOY
IL193335A0 (en) Method for geolocalization of one or more targets