HK1130945A1 - 數字合金及其形成方法 - Google Patents

數字合金及其形成方法

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Publication number
HK1130945A1
HK1130945A1 HK09108767.5A HK09108767A HK1130945A1 HK 1130945 A1 HK1130945 A1 HK 1130945A1 HK 09108767 A HK09108767 A HK 09108767A HK 1130945 A1 HK1130945 A1 HK 1130945A1
Authority
HK
Hong Kong
Prior art keywords
methods
forming
same
digital alloys
alloys
Prior art date
Application number
HK09108767.5A
Other languages
English (en)
Inventor
Evelyn Hu
Angela Belcher
Xina Quan
Original Assignee
Siluria Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siluria Technologies Inc filed Critical Siluria Technologies Inc
Publication of HK1130945A1 publication Critical patent/HK1130945A1/zh

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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K1/00—General methods for the preparation of peptides, i.e. processes for the organic chemical preparation of peptides or proteins of any length
    • C07K1/04—General methods for the preparation of peptides, i.e. processes for the organic chemical preparation of peptides or proteins of any length on carriers
    • C07K1/047—Simultaneous synthesis of different peptide species; Peptide libraries
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K14/00—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
    • C07K14/435—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans
    • C07K14/46—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans from vertebrates
    • C07K14/47—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans from vertebrates from mammals
    • C07K14/4701—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from animals; from humans from vertebrates from mammals not used
    • C07K14/4711—Alzheimer's disease; Amyloid plaque core protein
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K7/00—Peptides having 5 to 20 amino acids in a fully defined sequence; Derivatives thereof
    • C07K7/04—Linear peptides containing only normal peptide links
    • C07K7/06—Linear peptides containing only normal peptide links having 5 to 11 amino acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07K—PEPTIDES
    • C07K7/00—Peptides having 5 to 20 amino acids in a fully defined sequence; Derivatives thereof
    • C07K7/04—Linear peptides containing only normal peptide links
    • C07K7/08—Linear peptides containing only normal peptide links having 12 to 20 amino acids
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    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
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    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/133—Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
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    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
    • H01M4/50—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese
    • H01M4/505—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Biophysics (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Genetics & Genomics (AREA)
  • Medicinal Chemistry (AREA)
  • Molecular Biology (AREA)
  • Proteomics, Peptides & Aminoacids (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biochemistry (AREA)
  • Electromagnetism (AREA)
  • Gastroenterology & Hepatology (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Zoology (AREA)
  • Biomedical Technology (AREA)
  • Neurology (AREA)
  • Toxicology (AREA)
  • Sustainable Energy (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Powder Metallurgy (AREA)
  • Battery Electrode And Active Subsutance (AREA)
HK09108767.5A 2006-05-19 2009-09-24 數字合金及其形成方法 HK1130945A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80179206P 2006-05-19 2006-05-19
US11/679,726 US8865347B2 (en) 2001-09-28 2007-02-27 Digital alloys and methods for forming the same
PCT/US2007/012096 WO2007136841A2 (en) 2006-05-19 2007-05-18 Digital alloys and methods for forming the same

Publications (1)

Publication Number Publication Date
HK1130945A1 true HK1130945A1 (zh) 2010-01-08

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Application Number Title Priority Date Filing Date
HK09108767.5A HK1130945A1 (zh) 2006-05-19 2009-09-24 數字合金及其形成方法

Country Status (7)

Country Link
US (1) US8865347B2 (zh)
EP (1) EP2038915B1 (zh)
JP (1) JP2009537987A (zh)
CA (1) CA2652680A1 (zh)
HK (1) HK1130945A1 (zh)
TW (1) TW200805690A (zh)
WO (1) WO2007136841A2 (zh)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7960715B2 (en) 2008-04-24 2011-06-14 University Of Iowa Research Foundation Semiconductor heterostructure nanowire devices
US8637763B2 (en) * 2010-05-26 2014-01-28 Translucent, Inc. Solar cells with engineered spectral conversion
JP5633842B2 (ja) * 2010-06-14 2014-12-03 国立大学法人 奈良先端科学技術大学院大学 金属ナノ粒子の選択配置方法
KR20120040016A (ko) * 2010-10-18 2012-04-26 엘지전자 주식회사 태양 전지용 기판 및 태양 전지
US8834831B2 (en) 2011-01-11 2014-09-16 The United States Of America As Represented By The Secretary Of The Army Controlling morpholoy of titanium oxide using designed peptides
US10494720B2 (en) 2011-02-28 2019-12-03 Nthdegree Technologies Worldwide Inc Metallic nanofiber ink, substantially transparent conductor, and fabrication method
KR102032108B1 (ko) 2011-02-28 2019-10-15 엔티에이치 디그리 테크놀로지스 월드와이드 인코포레이티드 금속성 나노섬유 잉크, 실질적으로 투명한 전도체, 및 제조 방법
MY162772A (en) 2011-05-24 2017-07-14 Siluria Technologies Inc Catalysts for oxidative coupling of methane
BR112014012795B1 (pt) 2011-11-29 2022-04-12 Siluria Technologies, Inc Material catalítico na forma de uma microesfera prensada, extrusado ou monólito e método para o acoplamento oxidativo de metano
US20130160702A1 (en) * 2011-12-23 2013-06-27 Soitec Methods of growing iii-v semiconductor materials, and related systems
US9977876B2 (en) 2012-02-24 2018-05-22 Perkinelmer Informatics, Inc. Systems, methods, and apparatus for drawing chemical structures using touch and gestures
US20140121433A1 (en) 2012-05-24 2014-05-01 Siluria Technologies, Inc. Catalytic forms and formulations
US9920207B2 (en) 2012-06-22 2018-03-20 C3Nano Inc. Metal nanostructured networks and transparent conductive material
US10029916B2 (en) 2012-06-22 2018-07-24 C3Nano Inc. Metal nanowire networks and transparent conductive material
US9535583B2 (en) 2012-12-13 2017-01-03 Perkinelmer Informatics, Inc. Draw-ahead feature for chemical structure drawing applications
US10020807B2 (en) 2013-02-26 2018-07-10 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
US10412131B2 (en) 2013-03-13 2019-09-10 Perkinelmer Informatics, Inc. Systems and methods for gesture-based sharing of data between separate electronic devices
US8854361B1 (en) 2013-03-13 2014-10-07 Cambridgesoft Corporation Visually augmenting a graphical rendering of a chemical structure representation or biological sequence representation with multi-dimensional information
EP2969184A4 (en) 2013-03-15 2016-12-21 Siluria Technologies Inc CATALYSTS FOR PETROCHEMICAL CATALYSIS
US9430127B2 (en) * 2013-05-08 2016-08-30 Cambridgesoft Corporation Systems and methods for providing feedback cues for touch screen interface interaction with chemical and biological structure drawing applications
US9751294B2 (en) 2013-05-09 2017-09-05 Perkinelmer Informatics, Inc. Systems and methods for translating three dimensional graphic molecular models to computer aided design format
US9730596B2 (en) 2013-06-28 2017-08-15 Stmicroelectronics, Inc. Low power biological sensing system
US11274223B2 (en) 2013-11-22 2022-03-15 C3 Nano, Inc. Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches
US11343911B1 (en) 2014-04-11 2022-05-24 C3 Nano, Inc. Formable transparent conductive films with metal nanowires
US9183968B1 (en) 2014-07-31 2015-11-10 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
PL3194070T3 (pl) 2014-09-17 2021-06-14 Lummus Technology Llc Katalizatory do utleniającego sprzęgania metanu i utleniającego odwodornienia etanu
US10347722B2 (en) * 2015-03-04 2019-07-09 Lehigh University Artificially engineered III-nitride digital alloy
EP3590056A1 (en) 2017-03-03 2020-01-08 Perkinelmer Informatics, Inc. Systems and methods for searching and indexing documents comprising chemical information
US10236517B2 (en) 2017-08-16 2019-03-19 GM Global Technology Operations LLC Method for manufacturing and cleaning a stainless steel fuel cell bipolar plate

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815063B1 (en) 1996-11-16 2004-11-09 Nanomagnetics, Ltd. Magnetic fluid
US6713173B2 (en) 1996-11-16 2004-03-30 Nanomagnetics Limited Magnetizable device
US6576452B1 (en) 2000-10-04 2003-06-10 Genencor International, Inc. 2,5-diketo-L-gluconic acid reductases and methods of use
US20030148380A1 (en) 2001-06-05 2003-08-07 Belcher Angela M. Molecular recognition of materials
US20050164515A9 (en) 2001-06-05 2005-07-28 Belcher Angela M. Biological control of nanoparticle nucleation, shape and crystal phase
US20030113714A1 (en) 2001-09-28 2003-06-19 Belcher Angela M. Biological control of nanoparticles
US8283325B2 (en) 2004-10-19 2012-10-09 Massachusetts Institute Of Technology Virus scaffold for self-assembled, flexible and light lithium battery
US20030073104A1 (en) 2001-10-02 2003-04-17 Belcher Angela M. Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus
EP1572897B1 (en) 2001-11-08 2009-07-29 United States of America, as represented by the Administrator of the National Aeronautics and Space Administration ( NASA) Ordered biological nanostructures formed from chaperonin polypeptides
US7393476B2 (en) 2001-11-22 2008-07-01 Gs Yuasa Corporation Positive electrode active material for lithium secondary cell and lithium secondary cell
US7217882B2 (en) 2002-05-24 2007-05-15 Cornell Research Foundation, Inc. Broad spectrum solar cell
US7598344B2 (en) 2002-09-04 2009-10-06 Board Of Regents, The University Of Texas System Composition, method and use of bi-functional biomaterials
KR20070007793A (ko) 2004-02-05 2007-01-16 메사추세츠 인스티튜트 오브 테크놀로지 세포 디스플레이 라이브러리
WO2006076027A2 (en) 2004-05-17 2006-07-20 Cambrios Technology Corp. Biofabrication of transistors including field effect transistors
CN100349306C (zh) 2004-08-27 2007-11-14 中国科学院半导体研究所 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法
GB0510035D0 (en) 2005-05-17 2005-06-22 Univ Cranfield Electroluminescent devices
US20060286686A1 (en) 2005-06-15 2006-12-21 Honeywell International, Inc. Integrated light emitting diode displays using biofabrication

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EP2038915B1 (en) 2014-12-31
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CA2652680A1 (en) 2007-11-29

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