TWI366857B - Ion implant apparatus - Google Patents

Ion implant apparatus

Info

Publication number
TWI366857B
TWI366857B TW096110940A TW96110940A TWI366857B TW I366857 B TWI366857 B TW I366857B TW 096110940 A TW096110940 A TW 096110940A TW 96110940 A TW96110940 A TW 96110940A TW I366857 B TWI366857 B TW I366857B
Authority
TW
Taiwan
Prior art keywords
ion implant
implant apparatus
ion
implant
Prior art date
Application number
TW096110940A
Other languages
English (en)
Other versions
TW200741793A (en
Inventor
Ichiro Nakamoto
Hiroshi Horai
Tatsuya Sodekoda
Masahiro Yoshida
Original Assignee
Ishikawajima Harima Heavy Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ishikawajima Harima Heavy Ind filed Critical Ishikawajima Harima Heavy Ind
Publication of TW200741793A publication Critical patent/TW200741793A/zh
Application granted granted Critical
Publication of TWI366857B publication Critical patent/TWI366857B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0455—Diaphragms with variable aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Tubes For Measurement (AREA)
TW096110940A 2006-03-31 2007-03-29 Ion implant apparatus TWI366857B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006099477A JP4882456B2 (ja) 2006-03-31 2006-03-31 イオン注入装置

Publications (2)

Publication Number Publication Date
TW200741793A TW200741793A (en) 2007-11-01
TWI366857B true TWI366857B (en) 2012-06-21

Family

ID=38563389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110940A TWI366857B (en) 2006-03-31 2007-03-29 Ion implant apparatus

Country Status (6)

Country Link
US (1) US7964856B2 (zh)
JP (1) JP4882456B2 (zh)
KR (1) KR101068345B1 (zh)
CN (1) CN101416270B (zh)
TW (1) TWI366857B (zh)
WO (1) WO2007114120A1 (zh)

Families Citing this family (32)

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JP4288288B2 (ja) * 2007-03-29 2009-07-01 三井造船株式会社 イオン注入装置
JP4365441B2 (ja) 2008-03-31 2009-11-18 三井造船株式会社 イオン注入装置、イオン注入方法及びプログラム
JP5181824B2 (ja) * 2008-05-19 2013-04-10 日新イオン機器株式会社 イオンビーム照射装置及びイオンビーム測定方法
US7977628B2 (en) * 2008-06-25 2011-07-12 Axcelis Technologies, Inc. System and method for reducing particles and contamination by matching beam complementary aperture shapes to beam shapes
KR101024223B1 (ko) * 2008-12-16 2011-03-29 한국원자력연구원 멀티 슬릿을 이용한 이종 이온빔 조사장치 및 조사방법
US8101510B2 (en) 2009-04-03 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
US7767977B1 (en) * 2009-04-03 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Ion source
US8603591B2 (en) 2009-04-03 2013-12-10 Varian Semiconductor Ewuipment Associates, Inc. Enhanced etch and deposition profile control using plasma sheath engineering
US8188445B2 (en) 2009-04-03 2012-05-29 Varian Semiconductor Equipment Associates, Inc. Ion source
US8623171B2 (en) 2009-04-03 2014-01-07 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
TWI470663B (zh) * 2009-04-03 2015-01-21 Varian Semiconductor Equipment 離子源
US8900982B2 (en) 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9006688B2 (en) 2009-04-08 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate using a mask
US9076914B2 (en) 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US8294125B2 (en) 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
KR101117637B1 (ko) 2009-12-14 2012-03-05 삼성모바일디스플레이주식회사 이온 주입 시스템
US8669539B2 (en) 2010-03-29 2014-03-11 Advanced Ion Beam Technology, Inc. Implant method and implanter by using a variable aperture
JP5041260B2 (ja) * 2010-06-04 2012-10-03 日新イオン機器株式会社 イオン注入装置
US8669517B2 (en) * 2011-05-24 2014-03-11 Axcelis Technologies, Inc. Mass analysis variable exit aperture
JP5648919B2 (ja) * 2011-08-17 2015-01-07 日新イオン機器株式会社 イオン注入装置
JP2013098003A (ja) * 2011-10-31 2013-05-20 Nissin Ion Equipment Co Ltd イオンビーム引出し用電極およびこれを備えたイオン源
JP5808706B2 (ja) * 2012-03-29 2015-11-10 住友重機械イオンテクノロジー株式会社 イオン注入装置及びその制御方法
US9070534B2 (en) * 2012-05-04 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Ion beam dimension control for ion implantation process and apparatus, and advanced process control
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
JP5985362B2 (ja) * 2012-11-13 2016-09-06 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US9928988B2 (en) * 2013-03-13 2018-03-27 Varian Semiconductor Equipment Associates, Inc. Ion source
US9734982B1 (en) * 2016-05-24 2017-08-15 Nissin Ion Equipment Co., Ltd. Beam current density distribution adjustment device and ion implanter
CN207458887U (zh) * 2017-06-16 2018-06-05 上海凯世通半导体股份有限公司 离子注入设备
CN112585714A (zh) 2018-08-31 2021-03-30 株式会社日立高新技术 离子研磨装置
CN113793797A (zh) * 2021-03-19 2021-12-14 延边大学 一种可分离同分异构体碎片离子的质谱仪
CN113571401B (zh) * 2021-07-19 2024-06-28 粤芯半导体技术股份有限公司 狭缝组件及离子注入机台
US11574796B1 (en) * 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system

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US4947416A (en) * 1988-10-21 1990-08-07 General Electric Company Scanning equalization radiography with stationary equalization detector
JP2870924B2 (ja) * 1990-02-02 1999-03-17 日新電機株式会社 イオンビームのモニタ方法およびその装置
JPH04213091A (ja) * 1990-12-10 1992-08-04 Konica Corp 放射線量検出装置
JP3079314B2 (ja) * 1990-12-10 2000-08-21 コニカ株式会社 放射線撮像装置
JP3172800B2 (ja) * 1991-04-10 2001-06-04 コニカ株式会社 放射線撮像装置
JPH05144407A (ja) 1991-11-18 1993-06-11 Nissin Electric Co Ltd イオン注入装置
JPH08315766A (ja) * 1995-05-16 1996-11-29 Sony Corp イオン注入装置およびイオン注入方法
JPH09245718A (ja) 1996-03-08 1997-09-19 Fujitsu Ltd イオン注入方法及びイオン注入装置
JP3749924B2 (ja) * 1996-12-03 2006-03-01 富士通株式会社 イオン注入方法および半導体装置の製造方法
JP3371753B2 (ja) 1997-04-25 2003-01-27 日新電機株式会社 イオン注入装置
JPH11146875A (ja) * 1997-11-18 1999-06-02 Shimadzu Corp Ｘ線診断装置
JPH11204298A (ja) * 1998-01-20 1999-07-30 Toshiba Corp ビーム輸送系
JPH11339711A (ja) 1998-05-29 1999-12-10 Ulvac Corp イオン注入装置
JP3605047B2 (ja) * 2001-05-22 2004-12-22 キヤノン株式会社 照明装置、露光装置、デバイス製造方法及びデバイス
CN102034665B (zh) * 2002-06-26 2014-06-25 山米奎普公司 一种离子植入装置和一种通过植入氢化硼簇离子制造半导体的方法
JP4388899B2 (ja) * 2002-11-19 2009-12-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Ｘ線検査装置
JP2005024475A (ja) * 2003-07-01 2005-01-27 Natl Inst Of Radiological Sciences 飛程補償装置及び重荷電粒子線照射装置
JP2005109304A (ja) * 2003-10-01 2005-04-21 Canon Inc 照明光学系及び露光装置
GB2407433B (en) * 2003-10-24 2008-12-24 Applied Materials Inc Cathode and counter-cathode arrangement in an ion source
US7078714B2 (en) * 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
US20060258128A1 (en) * 2005-03-09 2006-11-16 Peter Nunan Methods and apparatus for enabling multiple process steps on a single substrate
US7279687B2 (en) * 2005-08-26 2007-10-09 Varian Semiconductor Equipment Associates, Inc. Technique for implementing a variable aperture lens in an ion implanter
US7345754B1 (en) * 2005-09-16 2008-03-18 Kla-Tencor Technologies Corp. Fourier filters and wafer inspection systems

Also Published As

Publication number Publication date
US7964856B2 (en) 2011-06-21
TW200741793A (en) 2007-11-01
JP2007273368A (ja) 2007-10-18
CN101416270A (zh) 2009-04-22
WO2007114120A1 (ja) 2007-10-11
US20100171048A1 (en) 2010-07-08
KR20080106956A (ko) 2008-12-09
JP4882456B2 (ja) 2012-02-22
KR101068345B1 (ko) 2011-09-30
CN101416270B (zh) 2011-03-23

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees