JP5648919B2 - イオン注入装置 - Google Patents
イオン注入装置 Download PDFInfo
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- JP5648919B2 JP5648919B2 JP2011178472A JP2011178472A JP5648919B2 JP 5648919 B2 JP5648919 B2 JP 5648919B2 JP 2011178472 A JP2011178472 A JP 2011178472A JP 2011178472 A JP2011178472 A JP 2011178472A JP 5648919 B2 JP5648919 B2 JP 5648919B2
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- ion beam
- electrode
- ion
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- substrate
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- 238000010884 ion-beam technique Methods 0.000 claims description 159
- 239000000758 substrate Substances 0.000 claims description 43
- 238000005468 ion implantation Methods 0.000 claims description 40
- 238000005259 measurement Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 230000032258 transport Effects 0.000 description 16
- 230000005684 electric field Effects 0.000 description 15
- 230000007935 neutral effect Effects 0.000 description 13
- 230000009471 action Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008602 contraction Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 238000012951 Remeasurement Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001595 contractor effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
- H01J2237/0835—Variable cross-section or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Description
このような中性粒子を検出することは出来ない。その為、基板8に照射される正確なビーム電流量の把握が出来なくなることから、ビーム電流計測器9での計測結果に基づいて、基板8へのイオン注入量を制御することが困難であった。
2・・・イオンビーム
3・・・質量分析マグネット
4・・・分析スリット
5・・・偏向電極
6・・・遮蔽部材
7・・・処理室
8・・・基板
9・・・ビーム電流計測器
10・・・制御装置
11・・・平板電極
12・・・電極群
Claims (5)
- イオン源より断面が略長方形状の正の電荷を有するイオンビームを射出させ、処理室内に配置された基板にイオン注入処理を施すイオン注入装置であって、
前記イオンビームの進行方向に垂直な断面の長辺方向におけるビーム電流密度分布を計測する複数のファラデーカップから構成されているビーム電流計測器と、
前記ビーム電流計測器での計測結果に応じて、前記イオンビームの前記長辺方向における少なくとも一部を前記イオンビームの進行方向に垂直な断面の略短辺方向に向けて偏向させる偏向電極と、
前記偏向電極によって偏向された前記イオンビームを部分的に遮蔽する遮蔽部材を備えていて、
前記偏向電極は1枚の平板電極と前記イオンビームの前記短辺方向で前記イオンビームを挟んで前記平板電極に対向配置された電極群からなり、前記平板電極は電気的に接地されているとともに、前記電極群を構成する複数の電極は互いに電気的に独立していて、各電極には電位設定を行う為の複数の電源が個別に接続されていることを特徴とするイオン注入装置。 - 前記イオンビームの前記長辺方向における寸法は前記基板の寸法よりも長く、前記基板へのイオン注入処理時には、前記処理室内で前記基板が前記イオンビームの前記短辺方向に沿って搬送されることを特徴とする請求項1記載のイオン注入装置。
- 前記ビーム電流計測器での計測結果が所望する値でない場合、前記電極群を構成する複数の電極の電位は、全ての電極で負電位とするか、あるいは、一部の電極で負電位とし、かつ、残りの電極で接地電位とすることを特徴とする請求項1または2記載のイオン注入装置。
- 前記複数の電源には、接地電位を基準にして前記複数の電源の電位を一括して設定するバイアス電源が接続されていることを特徴とする請求項1または2記載のイオン注入装置。
- 前記バイアス電源は、前記複数の電源の電位を一括して負電位にすることを特徴とする請求項4記載のイオン注入装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011178472A JP5648919B2 (ja) | 2011-08-17 | 2011-08-17 | イオン注入装置 |
KR1020120088403A KR101410204B1 (ko) | 2011-08-17 | 2012-08-13 | 이온 주입 장치 |
CN201210295451.3A CN102956428B (zh) | 2011-08-17 | 2012-08-17 | 离子注入设备 |
US13/588,735 US8653490B2 (en) | 2011-08-17 | 2012-08-17 | Ion implanter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011178472A JP5648919B2 (ja) | 2011-08-17 | 2011-08-17 | イオン注入装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013041767A JP2013041767A (ja) | 2013-02-28 |
JP2013041767A5 JP2013041767A5 (ja) | 2013-04-25 |
JP5648919B2 true JP5648919B2 (ja) | 2015-01-07 |
Family
ID=47711723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011178472A Expired - Fee Related JP5648919B2 (ja) | 2011-08-17 | 2011-08-17 | イオン注入装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8653490B2 (ja) |
JP (1) | JP5648919B2 (ja) |
KR (1) | KR101410204B1 (ja) |
CN (1) | CN102956428B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014041707A (ja) * | 2012-08-21 | 2014-03-06 | Nissin Ion Equipment Co Ltd | イオン注入装置 |
US9142386B2 (en) | 2013-03-15 | 2015-09-22 | Nissin Ion Equipment Co., Ltd. | Ion beam line |
US9502213B2 (en) | 2013-03-15 | 2016-11-22 | Nissin Ion Equipment Co., Ltd. | Ion beam line |
CN103681191B (zh) * | 2013-11-26 | 2016-03-09 | 中国电子科技集团公司第四十八研究所 | 一种离子注入机宽束均匀性调节装置 |
CN105719942B (zh) * | 2014-12-05 | 2017-12-26 | 中国科学院大连化学物理研究所 | 一种用于飞行时间质谱的高动态范围检测器 |
TWI618110B (zh) * | 2015-08-20 | 2018-03-11 | 日新離子機器股份有限公司 | 離子植入系統 |
US9734982B1 (en) * | 2016-05-24 | 2017-08-15 | Nissin Ion Equipment Co., Ltd. | Beam current density distribution adjustment device and ion implanter |
CN107919261B (zh) * | 2017-11-14 | 2020-02-28 | 京东方科技集团股份有限公司 | 一种离子注入设备及其控制方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0689684A (ja) * | 1991-03-19 | 1994-03-29 | Mitsubishi Heavy Ind Ltd | 荷電粒子ビーム装置 |
JP4133883B2 (ja) * | 2003-12-04 | 2008-08-13 | 日新イオン機器株式会社 | イオンビーム装置 |
US7078714B2 (en) * | 2004-05-14 | 2006-07-18 | Nissin Ion Equipment Co., Ltd. | Ion implanting apparatus |
JP4997756B2 (ja) * | 2005-12-20 | 2012-08-08 | 日新イオン機器株式会社 | イオンビーム照射装置およびビーム均一性調整方法 |
US7525103B2 (en) * | 2006-01-20 | 2009-04-28 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving uniformity of a ribbon beam |
JP4882456B2 (ja) * | 2006-03-31 | 2012-02-22 | 株式会社Ihi | イオン注入装置 |
JP4375370B2 (ja) * | 2006-08-18 | 2009-12-02 | 日新イオン機器株式会社 | イオン注入装置におけるビーム進行角補正方法 |
JP4305489B2 (ja) * | 2006-10-11 | 2009-07-29 | 日新イオン機器株式会社 | イオン注入装置 |
US7635850B2 (en) * | 2006-10-11 | 2009-12-22 | Nissin Ion Equipment Co., Ltd. | Ion implanter |
JP4288288B2 (ja) * | 2007-03-29 | 2009-07-01 | 三井造船株式会社 | イオン注入装置 |
-
2011
- 2011-08-17 JP JP2011178472A patent/JP5648919B2/ja not_active Expired - Fee Related
-
2012
- 2012-08-13 KR KR1020120088403A patent/KR101410204B1/ko active IP Right Grant
- 2012-08-17 US US13/588,735 patent/US8653490B2/en not_active Expired - Fee Related
- 2012-08-17 CN CN201210295451.3A patent/CN102956428B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2013041767A (ja) | 2013-02-28 |
US8653490B2 (en) | 2014-02-18 |
CN102956428B (zh) | 2015-07-08 |
US20130042809A1 (en) | 2013-02-21 |
KR20130020581A (ko) | 2013-02-27 |
KR101410204B1 (ko) | 2014-06-19 |
CN102956428A (zh) | 2013-03-06 |
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